KR102063163B1 - 실리콘-온-절연체 기반 무선 주파수 스위치와 관련된 회로, 디바이스, 방법 및 조합 - Google Patents

실리콘-온-절연체 기반 무선 주파수 스위치와 관련된 회로, 디바이스, 방법 및 조합 Download PDF

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KR102063163B1
KR102063163B1 KR1020157003307A KR20157003307A KR102063163B1 KR 102063163 B1 KR102063163 B1 KR 102063163B1 KR 1020157003307 A KR1020157003307 A KR 1020157003307A KR 20157003307 A KR20157003307 A KR 20157003307A KR 102063163 B1 KR102063163 B1 KR 102063163B1
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field effect
node
circuit
switch
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KR20150034767A (ko
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피크렛 알턴킬릭
기욤 블린
하키 세비
한칭 푸
멩슈 수
종-훈 이
아누즈 마단
누타퐁 스리라타나
추밍 시흐
스티븐 스프링클
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스카이워크스 솔루션즈, 인코포레이티드
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H01L2924/0002—
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
KR1020157003307A 2012-07-07 2013-07-06 실리콘-온-절연체 기반 무선 주파수 스위치와 관련된 회로, 디바이스, 방법 및 조합 Active KR102063163B1 (ko)

Applications Claiming Priority (27)

Application Number Priority Date Filing Date Title
US201261669049P 2012-07-07 2012-07-07
US201261669044P 2012-07-07 2012-07-07
US201261669037P 2012-07-07 2012-07-07
US201261669039P 2012-07-07 2012-07-07
US201261669050P 2012-07-07 2012-07-07
US201261669055P 2012-07-07 2012-07-07
US201261669045P 2012-07-07 2012-07-07
US201261669035P 2012-07-07 2012-07-07
US201261669034P 2012-07-07 2012-07-07
US201261669042P 2012-07-07 2012-07-07
US201261669047P 2012-07-07 2012-07-07
US201261669054P 2012-07-07 2012-07-07
US61/669,034 2012-07-07
US61/669,055 2012-07-07
US61/669,047 2012-07-07
US61/669,035 2012-07-07
US61/669,045 2012-07-07
US61/669,054 2012-07-07
US61/669,044 2012-07-07
US61/669,049 2012-07-07
US61/669,039 2012-07-07
US61/669,042 2012-07-07
US61/669,050 2012-07-07
US61/669,037 2012-07-07
US201361760561P 2013-02-04 2013-02-04
US61/760,561 2013-02-04
PCT/US2013/049500 WO2014011510A2 (en) 2012-07-07 2013-07-06 Circuits, devices, methods and combinations related to silicon-on-insulator based radio-frequency switches

Publications (2)

Publication Number Publication Date
KR20150034767A KR20150034767A (ko) 2015-04-03
KR102063163B1 true KR102063163B1 (ko) 2020-01-07

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Country Status (6)

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EP (2) EP2870694B1 (https=)
JP (1) JP6026654B2 (https=)
KR (1) KR102063163B1 (https=)
CN (4) CN104604135B (https=)
TW (5) TWI624110B (https=)
WO (1) WO2014011510A2 (https=)

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