CN104380446B - 焊接用线 - Google Patents

焊接用线 Download PDF

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Publication number
CN104380446B
CN104380446B CN201480001393.6A CN201480001393A CN104380446B CN 104380446 B CN104380446 B CN 104380446B CN 201480001393 A CN201480001393 A CN 201480001393A CN 104380446 B CN104380446 B CN 104380446B
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quality
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addition
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add
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CN104380446A (zh
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长谷川刚
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Tatsuta Electric Wire and Cable Co Ltd
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Tatsuta Electric Wire and Cable Co Ltd
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Abstract

本发明提供一种银焊接用线，其与金焊接线相比廉价且可通过球焊接法和钉头凸点法的组合稳定地连接。线W是以Ag为主成分，Au的添加量为0.9质量％～2.6质量％，Pd的添加量为0.1质量％～1.5质量％，且Au和Pd的添加量合计为1.0质量％～3.0质量％，选自Ca、稀土类元素中的1种以上的元素合计为20～500质量ppm，选自Cu、Ni中的1种以上的元素合计为1000～10000质量ppm。该线W的0.2％耐力与其拉伸强度的比为90％以上，其电阻率为3.0μΩ·cm以下。

Description

焊接用线
技术领域
本发明涉及用于通过球焊接法和钉头凸点法的组合而将功率集成电路(powerIC)、LSI、晶体管、BGA(球栅阵列封装：BallGridArraypackage)、QFN(方形扁平无引脚封装：QuadFlatNonleadpackage)、LED(发光二极管)等半导体封装中的半导体元件上的电极彼此或电极与引线框、陶瓷基板、印刷基板等电路配线基板的导体配线进行连接的焊接用线。
背景技术
如图1所示，上述BGA等半导体封装例如是如下结构：在配线板1上介由焊接球2设置封装基板3，进而，将半导体元件(芯片)5介由芯片焊接材料4设置于该封装基板3上，利用密封材料6将该半导体元件5密封。在该半导体封装中的半导体元件5的电极a与封装基板3的导体配线(端子)c的电连接中通常使用球焊接法。
但是，在需要将电极a彼此连接时，若直接对电极a进行针脚式焊接，则有可能电极a被破坏，因此在一个电极a上设置钉头凸点，与另一电极a进行第一次接合后，在设置有钉头凸点的电极a上进行针脚式焊接。
另外，电极a与封装基板3的导体配线(端子)c的电连接是如下进行的，即，通过球焊接法进行接合后，为了提高接合可靠性而在针脚式焊点部上设置钉头凸点(安全焊接)。
此外，为了进行半导体封装的低背化，也在封装基板3的导体配线(端子)c形成第一焊点且对电极a进行针脚式焊接，但在这种情况下，预先在电极a上形成钉头凸点，在其上进行针脚式焊接(逆焊接)。
如此，半导体封装中的半导体元件5的电极a与封装基板3的导体配线(端子)c的电连接有时通过球焊接法和钉头凸点法的组合进行接合。
此外，如图2所示，对于作为上述半导体元件之一的LED的封装而言，例如是介由芯片焊接材料12将LED15设置于外壳散热器11，利用混合有荧光体e的密封材料14将LED15密封的结构。该封装中的LED15的电极a与形成电路配线基板的外壳电极13的导体配线(端子)c的电连接与BGA等半导体封装同样地通过上述球焊接法和钉头凸点法的组合进行。图中，16为树脂制壳体。
上述钉头凸点法中的钉头凸点例如如图3(a)～(f)所示地形成。即，从线W插通毛细管10a而在其顶端形成球(FAB：FreeAirBall)b的状态开始，打开夹具10b，毛细管10a朝向集成电路元件上的电极a下降。此时，球(FAB)b被捕捉于毛细管10a内。
若熔融球b与作为目标的电极a接触(若毛细管10a到达电极a)，则毛细管10a夹住熔融球b，对熔融球b给予热·负荷·超声波，由此熔融球b被压接(成为压接球b’)而与电极a固相接合后(图3(b)，打开夹具10b，使毛细管10a稍微上升。其后，关闭夹具10b，通过各种毛细管10a的动作，将线W从压接球b’切断(图3(c)～(f))。将如此形成的压接球b’称为钉头凸点。
将该钉头凸点b’与球焊接法组合而成的连接方法例如是在逆焊接中，经过图3(a)～(f)所示的方式后，如图3(g)所示，毛细管10a上升至一定高度后，在被确保在该毛细管10a的顶端的线W的顶端部分，以放电棒g施加高电压而放电(放出电火花)，以其热熔解线W，该熔解的线原材料利用表面张力而成为接近球状的熔融球b并凝固(图3(g))。
接着，如图3(h)所示，夹住该熔融球b的毛细管10a移动至导体配线c的正上方后，朝向导体配线c下降并被按压(图3(i))。与此同时，对其按压部位给予热·负荷·超声波，由此熔融球b被压接(成为压接球b’)而与导体配线c固相接合后，夹具10b打开并上升，同时朝向电极a上移动(图3(j)～(k))。此时，为了形成稳定的环，有时进行使毛细管10a进行特殊的移动而对线W附加“特征”的动作(参照从图3(k)的点划线至实线)。
到达被形成于电极a上的钉头凸点b’的正上方的毛细管10a朝向钉头凸点b’下降，将线W按压至钉头凸点(第二目标)b’。与此同时，对其按压部位给予热·负荷·超声波，由此使线W变形，形成用于使线W与钉头凸点b’接合的针脚式焊点，以及在以下步骤中确保尾部的尾部焊点(第二接合，图13(l)～(m))。
形成该两个焊点后，毛细管10a在残留着线W的状态下上升，在毛细管10a的顶端确保一定长度的尾部后，关闭夹具10b(握住线W)，从尾部焊点的部分扯掉线W(图13(m)～(n))。
毛细管10a上升至所需的高度时停止，在被确保于该毛细管10a的顶端的线W的顶端部分，以放电棒g施加高电压而放电(放出电火花)，以其热熔解线W，该熔解的线原材料利用表面张力而成为接近球状的熔融球b并凝固(图13(o))。
通过以上作用结束一个循环，以后，利用同样的作用，通过球焊接法和钉头凸点法的组合完成电极a与导体配线c的连接。
以上循环是钉头凸点法-球焊接法的情况且在形成钉头凸点b’后进行球焊接，但是在球焊接法-钉头凸点法的情况下(进行安全焊接时)，一个循环中的顺序不同，图3中，钉头凸点b’的形成成为后面。即，如图4(a)～(h)所示，首先对电极a进行图3的(h)～(o)的操作后，如图4(i)～(o)所示，对进行了针脚式焊接的导体配线c进行图3(a)～(g)的操作。
作为将该球焊接法和钉头凸点法组合而接合的焊接线(线)W的材质，可使用4N(纯度：99.99质量％以上)～2N的金。如此多用金是由于金即使在大气中被暴露于热也不氧化，因此无论在针脚式焊点上形成钉头凸点的情况下，还是在钉头凸点上进行针脚式焊接的情况下，均对接合没有特别的影响。此外，金通过适当地选择添加元素，可以在形成钉头凸点时容易地切断线，生产稳定。
另一方面，BGA等半导体封装中，金焊接线W由于昂贵，已经被替换为廉价的铜(Cu)焊接线。进而，开发并部分地使用了通过在该铜焊接线表面被覆钯(Pd)等而提高在铜焊接线中成为课题的第二接合性且改善了生产率的Pd被覆铜焊接线(下述专利文献1)。此外，关于银(Ag)焊接线，也被开发并部分地使用(下述专利文献2～5)。
专利文献
专利文献1：日本特开2007-123597号公报
专利文献2：日本特开昭57-194232号公报
专利文献3：日本特开昭58-6948号公报
专利文献4：日本特开平11-288962号公报
专利文献5：日本专利第4771562号公报
发明内容
金焊接线是昂贵的。作为其代替材料的铜焊接线虽然廉价，但是与金焊接线相比FAB硬，若电极a的芯片脆弱，则产生芯片损坏的可能性变高。此外，与金焊接线相比，第二接合性差，连续焊接性存在问题。
Pd被覆铜焊接线与铜焊接线相比第二接合性良好，连续焊接性良好，但存在FAB与铜焊接线相比进一步变硬，因此存在芯片损坏产生的问题。
此外，以往，在LED封装中使用被覆了Au的电极a的LED15，与电极a的连接中使用金焊接线。使用了该金的组合无法降低成本，因此在LED15应用中也期望廉价的焊接线。但是，铜焊接线在连续焊接性方面存在困难，Pd被覆铜焊接线的FAB变硬，因此有可能产生芯片损坏。此外，若使用铜焊接线或Pd被覆铜焊接线，则由于焊接线自身的反射率低，线部分形成阴影，因此有时也根据LED15的种类而使LED15自身的亮度下降。
此外，若使用铜焊接线或Pd被覆铜焊接线，则在制作钉头凸点b’后进行针脚式焊接时，在进行针脚式焊接为止的期间钉头凸点b’会氧化，针脚式焊点无法稳定。在进行针脚式焊接后进行钉头凸点b’的安全焊接的情况也相同，在针脚式焊接后进行钉头凸点为止的期间，针脚式焊点部会氧化，因此钉头凸点无法稳定地接合。
此外，对于以往的银焊接线而言，一般在形成球b时为了防止氧化而吹送氮(N2)气体并放电。与此相对，在专利文献2、3中记载有通过在Ag(银)中添加Al(铝)或Mg(镁)，即使在不吹送N2气体的情况下在大气中放电，也可以得到形状良好的球b。
但是，近年来，BGA的半导体封装中，电极a变小，此外，电极a彼此的距离也变近，因此需要得到更稳定的圆球状的球b，因此对于银焊接线也优选吹送N2气体而放电。吹送该N2气体而放电时，可以防止从周围侵入氧，但是将线顶端熔融时上述添加的Al或Mg从线表面的氧化银夺取氧，形成Al2O3或MgO。此时，若大量地含有Al或Mg，则存在如下问题：在球b表面大量地生成该Al2O3或MgO，与电极a接合时硬质的Al2O3或MgO损伤电极a。
同样地，专利文献4中记载有为了使线强度、耐热性提高而添加Ca(钙)、Sr(锶)、Y(钇)、La(镧)、Ce(铈)、Eu(铕)、Be(铍)、Ge(锗)、In(铟)、Sn(锡)，但是若大量地添加这些元素，则存在球b的硬度上升而损伤电极a的问题。
此外，专利文献4中记载有为了提高线的接合可靠性而添加Pt(铂)、Pd、Cu、Ru(钌)、Os(锇)、Rh(铑)、Ir(铱)、Au。但是，若大量地添加这样的元素，则存在线自身的电阻上升而损害作为焊接线W的性能的问题。即，如上所述，BGA等半导体封装中，电极a更小，其电极a间的距离也更近，因此要求减小第一接合部。
因此，需要减小焊接线的直径，但是线的电阻与线的直径为反比例，因此若线自身的电阻高，则存在无法减小线的直径的问题。此外，LED15中，为了提高光度而操作电流变高，但是若线的电阻高，则产生发热的问题，产生缩短密封树脂的寿命的问题。
此外，制作钉头凸点b’时通过毛细管10a的操作而切断线W(参照图3(d)、(e))，但若线W与熔融球b正上方的晶粒的大小具有差别，则该切断可稳定地进行。即，在线W的顶端部分，以放电棒g施加高电压而放电(放出电火花)，以其热熔解线W，制作熔融球b时，熔融球b的正上方的线W部受到热影响，但若线W自身的晶粒大，则由热影响所致的晶粒的粗大化未发展而没有出现晶粒的差别。相反，若线W自身的晶粒微细，则在受到热影响而发生晶粒粗大化的部分与微细部分的交界容易发生切断。
然而，以往的银焊接线中，针对0.2％耐力(YieldStrength以下设为“YS”)与拉伸强度(TensileStrength：以下设为“TS”)的比(100×YS/TS)小于80％的区域进行调质。即，施加高温或长时间的调质热处理，线W的晶粒大。在这样的线W的晶粒大的情况下，如上所述，制成熔融球b时，未产生晶粒的差别，钉头凸点制作时的切断无法稳定地进行，不仅钉头凸点的形状产生偏差，而且无法很好地切断的情况下，发生停机。
专利文献5中有涉及“一种焊接线，是由Ag、Au和Pd构成的三元合金系焊接线，金(Au)为4～10质量％、钯(Pd)为2～5质量％、氧化性非贵金属添加元素为15～70质量ppm、以及剩余部分由银(Ag)构成”的记载。但是，如该文献中记载的焊接线在制作如上所述的钉头凸点时的切断性未被考虑，存在钉头凸点形状偏差、停机发生的可能性。
该发明基于以上实际情况，其课题是提供一种与金焊接线相比廉价且可通过球焊接法和钉头凸点法的组合稳定地连接的银焊接用线。
为了达成上述课题，该发明在通过球焊接法和钉头凸点法的组合而连接的焊接用线中，采用以下构成：以Ag为主成分，Au的添加量为0.9质量％～5.0质量％，Pd的添加量为0.1质量％～5.0质量％，且Au和Pd的添加量合计为1.0质量％～8.0质量％，该线(W)的常温下的0.2％耐力(YS)与拉伸强度(TS)的比(100×YS/TS)为80％以上，优选为90％以上。
在该构成中，可以设为合计包含20～500质量ppm的选自Ca、稀土类元素中的1种以上的元素，进而可以设为合计包含1000～10000质量ppm的选自Cu、Ni中的1种以上的元素，此外，线的电阻率可以设为5.0μΩ·cm以下，优选设为3.0μΩ·cm以下。
以该Ag为主体的焊接线与以Au为主体的金焊接线相比，能够制得廉价的焊接线。
Au是为了得到良好的FAB而添加的。通常使用纯Ag线制作FAB时，在以由放电棒g形成的电火花熔融的线W顶端形成的熔融球b变得不稳定，难以稳定地得到圆球度高的FAB。但是，若添加0.9质量％以上的Au且以Au和Pd的合计量计添加1.0质量％以上，则熔融球b稳定且可以得到圆球度高的FAB。此外，若Au的添加量大于5.0质量％，则线变得昂贵。从该方面出发，Au的添加量优选设为2.6质量％以下。
Pd是为了得到第一接合部的耐腐蚀性而添加的。在BGA等半导体封装的电极a中大多被覆铝或铝合金。LED的电极a大多被覆金，但是有时也使用铝或铝合金的被覆材料。若银与铝接合，则在接合界面生成银和铝的金属间化合物层。若该化合物层中生长Ag2Al，则湿润环境下的耐腐蚀性变差。若在Ag线中添加0.1质量％以上的Pd，则在FAB的外周部形成Pd浓化层，由此可以抑制Ag2Al的生成。但是，若Pd的添加量大于5.0质量％，则产生FAB变硬、电极a产生裂纹等问题。
即使分别单独添加Pd、Au也有效果，但与仅添加某一定量的Pd或Au的情况相比，以Pd和Au的合计等量添加时熔点变高，因此复合添加Pd和Au而成的线的耐热性变高。因此，对于Pd和Au的添加量，合计设为1.0质量％～8.0质量％。
若添加Pd和Au的添加量的合计大于8.0质量％的量，则线的电阻变高。此外，球b的硬度变高，第一接合时会损伤电极a。此外，若添加量的合计小于3.0质量％，则线的电阻变得接近金线，因此能够减小线径。
这里，若线的电阻率大于3.0μΩ·cm且为5.0μΩ·cm以下，则可以通过增大线径而得到必需的电特性，因此没有问题，但若为3.0μΩ·cm以下，则变得等于或小于2N(99％)Au线的电阻率，因此对于该2NAu线，本发明的线的替换变得容易，或可以进行替换。
Ca、稀土类元素是为了提高线强度、耐热性而添加的，但若小于20质量ppm，则该线的耐热性变低而产生实用上的问题。此外，若添加量大于500质量ppm，则球b的硬度变高，第一接合时会损伤电极a。因此，Ca、稀土类元素的合计添加量设为20～500质量ppm。此外，更优选为20～100质量ppm，若为该范围，则线的耐热性高，也可以更低地抑制第一接合时的电极a的损伤的程度。
这里，稀土类元素难以获得，因此最优选添加Ca。此外，在稀土类元素中，优选以极微量的添加而对提高线的耐热性·强度有效的Y、Gd，以及通过使添加元素与Ag形成化合物来使化合物分散于作为基质的Ag中而有助于线的高强度化的La、Ce。
此外，需要高强度化时，除了Ca、稀土类元素的添加以外，Cu、Ni的添加是有效的。Cu、Ni不与Ca、稀土类元素反应而容易与作为基质的Ag进行合金化，因此不损害Ca、稀土类元素的添加效果，有助于基质的高强度化。这里，若其合计添加量小于1000质量ppm，则没有线的高强度化的效果，若大于10000质量ppm，则球b的硬度变高，第一接合时会损伤电极a。因此Cu、Ni的合计添加量优选为1000～10000质量ppm。
该线W的线径只要能够用作焊接线，就是任意的，例如设为12～50.8μm。若设为50.8μm以下，则可以进一步减小熔融球b，若小于12μm，则有可能焊接前操作者难以将线W通过毛细管10a，操作性变差，而且无法利用空气压对线施加充分的张力，难以控制环。
上述焊接线W的制造方法可以采用各种方法，例如，在纯度为99.99质量％以上的Ag中添加0.9质量％～5.0质量％的Au、0.1质量％～5.0质量％的Pd且Pd和Au的合计添加量为1.0质量％～8.0质量％，添加合计为20～500质量ppm的选自Ca、稀土类中的1种以上的元素，添加合计为1000～10000质量ppm的选自Cu、Ni中的1种以上的元素，通过连续铸造法制作大线径的该化学组成的棒条，使其在模具中依次贯通，直至线径50.8μm以下为止，从而伸线为规定的线径。其后，对线W施行调质热处理。
该调质热处理是将进行伸线至规定的线径为止且被缠绕于卷轴的线W重绕而使其在管状的热处理炉中行进，再次以卷取卷轴卷取，从而进行连续热处理。
焊接线W的YS和TS是在15～25℃的室温下对长度为100mm的试样进行拉伸试验而算出的。即，在拉伸试验中，将达到断裂为止的最大负荷除以初期截面积而得的值设为TS，将残留0.2％的永久应变时的负荷除以初期截面积的值(去除负荷时的永久应变成为0.2％的应力)设为YS。
这里，调质热处理前的线W成为残留了伸线时的加工应变的变形组织，其结晶组织是微细的。这种变形组织的100×YS/TS几乎接近100％，若施行低温或短时间的调质热处理，则发生加工应变缓缓地开放的“恢复”，若热处理温度更加高或长时间地施行调质热处理，则加工应变更加开放，发生晶粒变大的“重结晶”，相对于TS，YS缓缓地变低(100×YS/TS变小)。
若该100×YS/TS小于80％，则线的大部分重结晶，结晶组织变大，但若为80％以上，则重结晶是停留在线的一部分且晶粒也部分变大的程度。进而，若为90％以上，则成为晶粒的大部分保持微细的变形组织。
制作钉头凸点时，通过毛细管的各种动作而从压接球将线切断，但是若是线的结晶组织的交界，则在该部分可容易地切断。即，若是微细的晶粒的部分和粗大的晶粒的部分，则在其边界部分容易断裂。形成钉头凸点时，首先在线顶端放电而使线熔融，制作FAB时，FAB正上方的线部分因由放电产生的热而导致晶粒变大。这里受到由热所致的影响的部分称为HAZ(热影响区：HeatAffectZone)。若线的100×YS/TS为80％以上且晶粒微细，则在HAZ和线中形成晶粒的边界部分，易于发生钉头凸点时的切断。进而，若为90％以上，则晶粒的边界变得更明确，切断更稳定。
该发明如上述地以Ag为主体，因此与金焊接线相比能够制得廉价的焊接线，且通过Pd、Au、Ca、稀土类元素、Cu、Ni的适量添加和常温拉伸的调整，可以利用球焊接法和钉头凸点法的组合稳定地进行连接。
附图说明
图1是半导体封装的概略图。
图2是LED封装的概略图。
图3是钉头凸点法-球焊接法的说明图，(a)～(o)是其中途图。
图4是球焊接法-钉头凸点法的说明图，(a)～(o)是其中途图。
具体实施方式
使用纯度为99.99质量％以上(4N)的高纯度Ag，铸造表1所示的化学成分的银合金，制成8mmφ的盘条。对该盘条进行伸线加工，制成规定的最终线径(25μmφ)的银合金线，以各种加热温度·加热时间进行连续退火。应予说明，化学成分的定量是通过ICP-OES(高频感应耦合等离子体发光分光分析法)进行的。
对该连续退火了的各线W在15～25℃的常温下进行拉伸试验，测定0.2％耐力(YS)和拉伸强度(TS)。
[表1]
[表1]
分别对该各试制例和各比较例进行下述试验。
〔评价项目〕
对于各线W，进行以自动焊线机通过图3(a)～(f)所示的方法连续地制作钉头凸点b’的评价。即，利用由放电棒g形成的电弧放电，在线W顶端制作FAB(球b)，将它按压于Al被覆电极上而连续地制作钉头凸点b’。应予说明，FAB制作时，一边在线W顶端部使氮(N2)气体流动，一边进行电弧放电。
此外，利用如图3(a)～(o)所示的钉头凸点法-球焊接法的组合，在Ag被覆的42Ni-Fe板上进行连接。
用于评价的焊接试样中的连续凸点性、钉头凸点部的芯片损伤、电阻、树脂密封时的线流(wireflow)和综合评价示于表2。这些评价方法等如下所述。
〔评价方法〕
“连续凸点性”
以焊接设备进行10000次的连续凸点形成。这里，若未发生停机，则为“A”，若不能很好地切断线而发生1次停机，则为“B”，若发生2次以上停机，则为“D”。
“焊接后，钉头凸点部正下方的芯片损伤的评价”
将半导体元件5的钉头凸点部和电极膜以王水溶解，以光学显微镜和扫描型电子显微镜(SEM)观察裂纹。观察100个接合部，将看到1个小于3μm的微小的坑或完全看不到的情况设为“A”，在看到2个以上且不足5个的3μm以上的裂纹的情况下，认为在使用上没有问题，设为“B”，将到5个以上的3μm以上的裂纹的情况设为“D”。
“树脂密封时的线流的评价”
将线长：5mm的焊接试样以环氧树脂密封后，以X射线非破坏观察装置测定最大线流量。测定是进行20根，将其平均值除以线长5mm而得的比例设为线流率。若该线流率小于5％，则设为“A”，5％以上且小于7％时为“B”，7％以上时，认为在实用上存在问题，将评价设为“D”。
“电阻”
使用4端子法，测定室温下的电阻。若3个试样的电阻率的平均值为3.0μΩ·cm以下，则从金线替换时电特性的变化少，因此设为“A”，若大于3.0μΩ·cm且为5.0μΩ·cm以下，则从金线替换时在实用上的问题少，因此设为“B”，若大于5.0μΩ·cm，则认为不适合从金线替换而设为“D”。
“从Au线的替换”
研究本线W的重要因素是将金线替换为银线时产生的成本优势。因此，线W的成本也成为大的比较因素。这里，若线W含有大于5质量％的Au，则认为难以进行从Au线的替换而设为“D”，若大于2.6质量％且为5质量％以下，则可看到某程度的成本优势，因此设为“B”，若为2.6质量％以下，则认为成本优势大而设为“A”。
“FAB圆球度”
以线焊接分别制作100个各线径的2倍大小的FAB，测定与FAB的线平行的方向成直角的方向的直径。若该各自的直径的差为2μm以下，则认为接近圆球而设为“A”，若大于2μm，则认为圆球度低而设为“D”。
“耐腐蚀性评价(HAST)”
向电极进行焊接后，为了评价第一球接合部的耐腐蚀性，进行在130℃/85％气氛中放置168小时的HAST(高加速应力试验：HighlyAcceleratedStressTest)。这里，测定HAST前后的剪切强度，若HAST前的剪切强度(设为SSb)与HAST后的剪切强度(设为SSa)的比(SSa/SSb×100)大于70％，则认为有耐腐蚀性而设为“A”，若小于70％，则认为耐腐蚀性存在问题而设为“D”。应予说明，HAST前后的剪切强度的测定各进行n＝30。
“综合评价”
各评价中，全部为“A”的被定为“A”，“A”和“B”混杂的被定为“B”，即使有1个“D”也定为“D”。
[表2]
[表2]
该表1、2中，由比较例1，6，7可知，若Au的添加量小于0.9质量％或没有添加，则“FAB的圆球度”成为“D”。此外，由比较例5、12可知，若其大于5.0质量％，则“从Au线的替换”成为“D”。
此外，由比较例2、7、11可知，若Pd的添加量小于0.1质量％或没有添加，则“HAST”成为“D”，由比较例4可知，若大于5.0质量％，则“钉头凸点部正下方的芯片损伤”成为“D”。
此外，在比较例1、6中，Au和Pd的添加量合计小于1.0质量％时，“树脂密封时的线流”成为“D”，另一方面，在比较例7中，虽然Au和Pd的添加量合计小于1.0质量％，但添加了合计为350质量ppm的后述选自Ca、稀土类元素中的1种以上的元素，因此“树脂密封时的线流”成为“B”。此外，由比较例5、8可知，若Au和Pd的添加量合计大于8质量％，则“电阻”成为“D”。由比较例2、3、8～10可知，若线W的0.2％耐力(YS)与其拉伸强度(TS)的比小于80％，则“连续凸点性”为“D”。
与此相对，对于该发明所涉及的Au的添加量为0.9质量％～5.0质量％，Pd的添加量为0.1质量％～5.0质量％，且Au和Pd的添加量合计为1.0质量％～8质量％，该线W的0.2％耐力与其拉伸强度的比为80％以上的试制例1～15，“连续凸点性”、“钉头凸点部正下方的芯片损伤”、“树脂密封时的线流”、“从Au线的替换”、“FAB的圆球度”、“HAST”和“综合评价”中，均为“A”或“B”，可以理解为可在实用上无障碍地使用。
由比较例1、6可知，若选自Ca、稀土类元素中的1种以上的元素合计小于20质量ppm，则“树脂密封时的线流”成为“D”，另一方面，试制例5、13、比较例5中，选自Ca、稀土类元素中的1种以上的元素合计小于20质量ppm，但使“树脂密封时的线流”性提高的Au和Pd的添加量合计为1.0质量％以上，或选自Cu、Ni中的1种以上的元素合计为1000质量ppm以上，因此“树脂密封时的线流”成为“B”。此外，由比较例4、8、9可知，若选自Ca、稀土类元素中的1种以上的元素合计大于500质量ppm，则“钉头凸点部正下方的芯片损伤”成为“D”。
此外，由比较例1，6可知，若选自Cu、Ni中的1种以上的元素合计小于1000质量ppm，则“树脂密封时的线流”成为“D”，另一方面，试制例10、13～15、比较例7～9中，选自Cu、Ni中的1种以上的元素合计小于1000质量ppm，但使“树脂密封时的线流”性提高的Au和Pd的添加量合计为1.0质量％以上，或选自Ca、稀土类元素中的1种以上的元素合计为20质量ppm，因此“树脂密封时的线流”成为“B”。此外，由比较例3可知，若选自Cu、Ni中的1种以上的元素合计大于10000质量ppm，则“钉头凸点部正下方的芯片损伤”成为“D”。
此外，由试制例1～15、比较例1、4～7、11、12可理解，若线W的0.2％耐力与其拉伸强度的比为80％以上，则在连续凸点性中成为“A”或“B”，由试制例2、3、6～8、11～13、15、比较例5可知，若为90％以上，则连续凸点性中成为“A”，更加优异。
进而，由试制例1～3、6～8可理解，若是含有的Au的添加量为0.9质量％～2.6质量％，Pd的添加量为0.1质量％～1.5质量％，且Au和Pd的添加量合计为1.0质量％～3.0质量％，则“钉头凸点部正下方的芯片损伤”、“电阻”、“从Au线的替换”、”FAB的圆球度”、”HAST”中成为“A”，优异。
由比较例5、8可知，若线W的电阻率大于5.0μΩ·cm，则“电阻”成为“D”。另一方面，由试制例1～8、10、11、15、比较例1～3、6、7、11可知，若其电阻率被抑制为3.0μΩ·cm以下，则“电阻”成为“A”。
由以上可理解，试制例2、3、6～8、11中，线W的0.2％耐力与其拉伸强度的比为90％以上，Au的添加量：0.9质量％～2.6质量％，Pd的添加量：0.1质量％～1.5质量％，且Au和Pd的添加量的合计：1.0质量％～3.0质量％，选自Ca、稀土类元素中的1种以上的元素合计为20～500质量ppm，电阻率为3.0μΩ·cm以下，选自Cu、Ni中的1种以上的元素合计为1000～10000质量ppm，综合评价中成为“A”，最优异。
符号说明
3、13电路配线基板(外壳电极)
5半导体元件
15LED
W焊接用线
a半导体元件(LED)的电极
b熔融球
b’压接球(钉头凸点)
c电路配线基板的导体配线(引线端子)

Claims (10)

1.一种焊接用线，其特征在于，
是用于通过球焊接法和钉头凸点法的组合将半导体元件(5、15)的电极(a)与电路配线基板(3、13)的导体配线(c)连接的焊接用线(W)，
使Au的添加量为0.9质量％～5.0质量％，使Pd的添加量为0.1质量％～5.0质量％，且使Au和Pd的添加量合计为1.0质量％～8.0质量％，剩余为Ag和不可避免的杂质，
制成所述钉头凸点法中的熔融球(b)时，为了使晶粒产生差别而容易地进行线(W)的切断，该线(W)的0.2％耐力与其拉伸强度的比为80％以上。
2.一种焊接用线，其特征在于，
是用于通过球焊接法和钉头凸点法的组合将半导体元件(5、15)的电极(a)与电路配线基板(3、13)的导体配线(c)连接的焊接用线(W)，
使Au的添加量为0.9质量％～5.0质量％，使Pd的添加量为0.1质量％～5.0质量％，且使Au和Pd的添加量合计为1.0质量％～8.0质量％，进而，使选自Ca、Y、Sm、La、Ce中的1种以上的元素合计为20～500质量ppm，剩余为Ag和不可避免的杂质，
制成所述钉头凸点法中的熔融球(b)时，为了使晶粒产生差别而容易地进行线(W)的切断，该线(W)的0.2％耐力与其拉伸强度的比为80％以上。
3.一种焊接用线，其特征在于，
是用于通过球焊接法和钉头凸点法的组合将半导体元件(5、15)的电极(a)与电路配线基板(3、13)的导体配线(c)连接的焊接用线(W)，
使Au的添加量为0.9质量％～5.0质量％，使Pd的添加量为0.1质量％～5.0质量％，且使Au和Pd的添加量合计为1.0质量％～8.0质量％，进而，使选自Cu、Ni中的1种以上的元素合计为1000～10000质量ppm，剩余为Ag和不可避免的杂质，
制成所述钉头凸点法中的熔融球(b)时，为了使晶粒产生差别而容易地进行线(W)的切断，该线(W)的0.2％耐力与其拉伸强度的比为80％以上。
4.一种焊接用线，其特征在于，
是用于通过球焊接法和钉头凸点法的组合将半导体元件(5、15)的电极(a)与电路配线基板(3、13)的导体配线(c)连接的焊接用线(W)，
使Au的添加量为0.9质量％～5.0质量％，使Pd的添加量为0.1质量％～5.0质量％，且使Au和Pd的添加量合计为1.0质量％～8.0质量％，使选自Ca、Y、Sm、La、Ce中的1种以上的元素合计为20～500质量ppm，进而，使选自Cu、Ni中的1种以上的元素合计为1000～10000质量ppm，剩余为Ag和不可避免的杂质，
制成所述钉头凸点法中的熔融球(b)时，为了使晶粒产生差别而容易地进行线(W)的切断，该线(W)的0.2％耐力与其拉伸强度的比为80％以上
5.一种焊接用线，其特征在于，
是用于通过球焊接法和钉头凸点法的组合将半导体元件(5、15)的电极(a)与电路配线基板(3、13)的导体配线(c)连接的焊接用线(W)，
使Au的添加量为0.9质量％～2.6质量％，使Pd的添加量为0.1质量％～1.5质量％，且使Au和Pd的添加量合计为1.0质量％～3质量％，进而，使选自Ca、Y、Sm、La、Ce中的1种以上的元素合计为20～500质量ppm，剩余为Ag和不可避免的杂质，
制成所述钉头凸点法中的熔融球(b)时，为了使晶粒产生差别而容易地进行线(W)的切断，该线(W)的0.2％耐力与其拉伸强度的比为80％以上。
6.一种焊接用线，其特征在于，
是用于通过球焊接法和钉头凸点法的组合将半导体元件(5、15)的电极(a)与电路配线基板(3、13)的导体配线(c)连接的焊接用线(W)，
使Au的添加量为0.9质量％～2.6质量％，使Pd的添加量为0.1质量％～1.5质量％，且使Au和Pd的添加量合计为1.0质量％～3质量％，进而，使选自Cu、Ni中的1种以上的元素合计为1000～10000质量ppm，剩余为Ag和不可避免的杂质，
制成所述钉头凸点法中的熔融球(b)时，为了使晶粒产生差别而容易地进行线(W)的切断，该线(W)的0.2％耐力与其拉伸强度的比为80％以上。
7.一种焊接用线，其特征在于，
是用于通过球焊接法和钉头凸点法的组合将半导体元件(5、15)的电极(a)与电路配线基板(3、13)的导体配线(c)连接的焊接用线(W)，
使Au的添加量为0.9质量％～2.6质量％，使Pd的添加量为0.1质量％～1.5质量％，且使Au和Pd的添加量合计为1.0质量％～3质量％，使选自Ca、Y、Sm、La、Ce中的1种以上的元素合计为20～500质量ppm，进而，使选自Cu、Ni中的1种以上的元素合计为1000～10000质量ppm，剩余为Ag和不可避免的杂质，
制成所述钉头凸点法中的熔融球(b)时，为了使晶粒产生差别而容易地进行线(W)的切断，该线(W)的0.2％耐力与其拉伸强度的比为80％以上。
8.如权利要求1～4中任一项所述的焊接用线，其特征在于，所述线(W)的0.2％耐力与其拉伸强度的比为90％以上。
9.如权利要求1～4中任一项所述的焊接用线，其特征在于，所述线(W)的电阻率为5.0μΩ·cm以下。
10.如权利要求5～7中任一项所述的焊接用线，其特征在于，所述线(W)的电阻率为3.0μΩ·cm以下。
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