JP3994113B2 - ワイヤバンプ - Google Patents
ワイヤバンプ Download PDFInfo
- Publication number
- JP3994113B2 JP3994113B2 JP2006537825A JP2006537825A JP3994113B2 JP 3994113 B2 JP3994113 B2 JP 3994113B2 JP 2006537825 A JP2006537825 A JP 2006537825A JP 2006537825 A JP2006537825 A JP 2006537825A JP 3994113 B2 JP3994113 B2 JP 3994113B2
- Authority
- JP
- Japan
- Prior art keywords
- mass
- ppm
- alloy
- bump
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3013—Au as the principal constituent
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Description
(1) Alパッドへ接合するAu−Ag合金バンプのボール形状を真球に近づけること。
(2) AlパッドへのAu−Ag合金バンプの接合の信頼性を向上させること。
(3) Au−Ag合金バンプのテール長さを短くすること。
(4) 耐半田喰われ性を向上すること。
(5) バンプワイヤによるキャピラリー先端又は先端近傍の孔の汚れを減少すること。
(1) 純度99.99質量%以上のAgを1〜25質量%含有し、残部が純度99.99質量%以上のAuからなるAu−Agマトリックス合金に、該微量添加元素として、Caを5〜50質量ppm、Beを1〜20質量ppm及び/又は希土類元素を5〜90質量ppm含有せしめたAu−Ag合金からなることを特徴とするワイヤバンプ。
(2) 該微量添加元素として、Ge、Mg、Sr、Bi、Zn、Si、Ga、Sn、Sb、B及びLiの中から選ばれる少なくとも1種を10〜90質量ppm含有していることを特徴とする前記(1)に記載のワイヤバンプ。
(3) 該微量添加元素として、Caを5〜50質量ppm、Beを1〜20質量ppm及び/又は希土類元素を5〜90質量ppm含有し、更にGe、Mg、Sr、Bi、Zn、Si、Ga、Sn、Sb、B及びLiの中から選ばれる少なくとも1種を10〜90質量ppm含有していること(ただし、B及びLiがそれぞれ単独の場合は、0.5〜40質量ppm)ことを特徴とする前記(1)に記載のワイヤバンプ。
(4) 該AuマトリックスがAgを5〜25質量%含有させてなるAu−Ag合金であることを特徴とする上記(1)〜(3)のいずれかに記載のワイヤバンプ。
(5)該希土類元素がY、La、Ce、Eu、Nd、Gd及び/又はSmであることを特徴とする前記(1)又は(3)に記載のワイヤバンプ。
(6) Pb系半田又はSn系半田と接合したことを特徴とする前記(1)〜(5)のいずれかに記載のワイヤバンプ。
(7) Pbフリー系半田とフリップチップ接合したことを特徴とする前記(1)〜(5)のいずかに記載のワイヤバンプ。
(8) 融点が170℃〜260℃のPbフリーSn系半田とフリップチップ接合したことを特徴とする前記(1)〜(5)のいずれかに記載のワイヤバンプ。
本発明のAu−Ag合金では大気中のボール形成時に軟質の真球が得られるので、Alパッドのチップにダメージを与えることはない。また、大気中でAlパッドヘボンディングする時にCa、Beまたは希土類元素、あるいは、Ge、Mg、Sr、Bi、Zn、Si、Ga、Sn、Sb、BまたはLiの元素群の微量添加元素が酸化されて異形のボールになることはない。したがって、パッド面積が小さくなっても狙った位置へ確実に所定面積の真円でバンプワイヤ用のボールボンディングができる。
本発明の高純度のAu−Ag合金マトリックスでは、純AlまたはAl合金のAlパッドにおけるAlとAuとの間の金属間化合物の生成を遅延させ、この金属間化合物にAu4Alが生成しないので、Alパッドへの接合の信頼性を向上させる。Alパッドは、純AlまたはAlが主成分の合金(例えばAl:80%Au合金等)であればよい。更に樹脂モールドした場合には、AlとAuとの金属間化合物の生成がないので、封止樹脂中のハロゲンによる腐食を防止することができる。
本発明の高純度のAu−Ag合金マトリックスでは純Auマトリックスよりも微量添加元素の効き目が強く働き、微量添加元素と不純物元素とあわせて最大100ppmしか含まれていない場合(ただし、Ag成分を除く)でもバンプのテール長さのばらつきを短くすることができる。テール長さのばらつきが短くなればなるほど均質なバンプを製造することができるので、多数個のバンプを製造してもネック強度差を大きくすることができ、かつ、安定させることができる効果が得られる。
本発明の高純度のAu−Ag合金マトリックスでは耐半田喰われ性が向上するため半田とフリップチップ接合してもAu−Ag合金バンプ自体が半田中に消滅してしまうことがない。このため使用できる半田材料の選択範囲が広がり、半田付け後に高温でリフローしても安定した接合強度のフリップチップ接合体が得られる。また、特定の半田材料に対する使用可能な温度範囲が広いので、半田付けの作業管理条件が緩やかになる。しかも、バンプのテール長さのばらつきを抑制することができるので、Au−Ag合金バンプのテール部分だけを選択的に消失させることができ、ますますテール長さのばらつきを小さくすることができるようになる。特にAu−Ag合金マトリックス中のAgが5〜25質量%の範囲にあれば、高温における耐半田喰われ性が更に向上するので、安定したフリップチップ構造ができる。また、半田中に溶け込むAu等の元素が減少するので、半田中に脆弱な化合物が成長することはない。
希土類元素としては、Y、La、Ce、Eu、Nd、Gd、及びSmの中から選ばれる少なくとも1種を好ましくは用いることができる。
前記グループBの元素の複数を含有する場合、その合計量は、90ppm以下、好ましくは50ppm以下にするのがよい。
一般に、Auと微量添加元素とから構成される純度99.99質量%以上のAu合金は真球が得られやすく、Au−数%Pd合金も大気中で真球が得られやすい。Au−Ag合金の場合は、Agが高温大気中の酸素を取り込みやすいことから、Agの含有量が多くなると微量添加元素が酸化されて硬質の異形ボールを形成しやすくなり、ボンディング時にAlパッドへダメージを与えやすくなる。このためAgの含有量の上限を40%以下にして大気中でボール・ボンディングしてもAlパッド上で真円が得られるようにした。さらに、純度99.99質量%以上のAgを用いることによりAuに高濃度のAgを含有させても軟質のボールが得られるようにし、かつ、Caを5〜50質量ppm、Beを1〜20質量ppm及び/又は希土類元素を5〜90質量ppmとするかあるいは、Ge、Mg、Sr、Bi、Zn、Si、Ga、Sn、Sb、B又はLiの少なくとも1種を合計で10〜90質量ppm(ただし、B及びLiがそれぞれ単独の場合は、0.5〜40質量ppm)微量添加して真円が得られるようにした。
純度99.99質量%以上のAu合金にはこれらの前者と後者の微量添加元素群及び不可避な不純物(ただし、Ag成分を除く)が最大でも100ppm未満しか含まれていないので、常に安定した真球が得られるようになる。
Au−Ag合金マトリックスは、純金マトリックスやAu−Pd合金マトリックスに比べてAlパッドにおけるAlとAuとの金属間化合物の生成を遅延させ、この金属間化合物にはAu4Alが生成しないことがボンディングワイヤで知られている。本発明の微量添加元素群を添加したバンプ用のAu−Ag合金マトリックスでも微量添加元素群がマトリックス中にとどまってAlと反応せず純金マトリックスやAu−Pd合金マトリックスのようなAu4Alが生成しないことがわかった。このようにAu−Ag合金マトリックスはAuマトリックスやAu−Pd合金マトリックスよりもAlとAuとの金属間化合物の生成を遅延させる。また、上述した微量添加元素群を所定量添加したAu−Ag合金マトリックスは真球を形成する。しかも、微量添加元素が最大100ppmしか含まれていない場合には純度99.99質量%以上のAu合金(ただし、Ag成分を除く)が維持できるので、AlパッドへのAu−Ag合金バンプの接合の信頼性をボンディング・ワイヤの場合と同様に向上させることができる。なお、Ge、Mg、Sr、Bi、Zn、Si、Ga、Sn、Sb、B又はLiのうち少なくとも1種類以上を合計で0.009〜0.3質量%含有していても、これらの元素群は普通の溶解・鋳造作業でAu−Ag合金マトリックスに微細に分散しているためAlパッドへのチップダメージは問題ないことがわかった。
本発明者らは、バンプのテール長さのばらつきがバンプワイヤ自身の強度と熱影響部の強度との差(これを「ネック強度差」と称する)にあると考えた。Au−Ag合金マトリックス中のAgが1質量%未満では、微量添加元素を所定量だけ添加しても純Auマトリックスと同様Au−Ag合金マトリックス自体がなまりやすくなる。バンプワイヤがなまった場合はワイヤ強度が弱くなってネック強度差が小さくなる。その結果、バンプワイヤの引きちぎられる位置がばらばらとなり、テール長さがばらつきやすくなる。そこで、所定割合のAu−Ag合金マトリックスを用いることによって純金マトリックスやAu−Pd合金マトリックスよりもネック強度差を大きくすることができた、また、Au−Ag合金マトリックス中に微量添加元素を所定量ほど添加しなければ、Au−Ag合金が高純度のAuと高純度のAgとで構成されているため熱影響部が長くなってしまう。その結果テール長さがばらつきやすくなってしまうので、必ずAu−Ag合金マトリックス中に微量添加元素を添加しなければならない。ネック強度差の観点からAu−Ag合金マトリックスにおけるより好ましいAgの含有量は5〜25質量%の範囲である。Caを5〜50質量ppm、Beを1〜20質量ppm又は希土類元素を5〜90質量ppmの少なくとも1種の元素群を含有させると、微量であっても熱影響部を狭くする効果が純金マトリックスやAu−Pd合金マトリックスに比べて大きい。特に、希土類元素のうちのY、La、Ce、Eu又はNdが熱影響部を狭くする効果が大きい。しかし、これらの元素が下限未満であると、たとえAu−Ag合金マトリックス中のAg含有量が5〜25質量%の範囲であったとしても、熱影響部が拡大してしまうので所定の下限量が必要である。
半田材料としてはPbを主成分とした合金(Pb合金、Pb:0.3質量%Sn合金、Pb:5質量%Sn合金等)やPbフリー合金(Sn合金、Sn:3.5質量%Ag合金、Sn:0.8質量%Cu合金、Sn:0.5質量%Ni合金、Sn:1.0質量%Zn合金、Sn:3.5質量%Ag:0.5質量%Cu合金、Sn:20質量%In合金など)が知られている。Au−Ag合金マトリックスはこれらの半田材料に対して純Auマトリックスよりも半田喰われ性を向上し、特に高温における半田喰われ性を向上することがわかった。特にAu−Ag合金マトリックス中のAgが5〜25質量%の範囲にあれば、高温における耐半田喰われ性が更に向上する。添加元素の添加量は微量なのでAu−Ag合金マトリックスにおける半田喰われ性に与える影響は少なく、微量添加元素を所定量ほど添加されたAu−Ag合金マトリックスは、いずれも純金マトリックスやAu−Pd合金マトリックスに比べて耐半田喰われ性が向上していた。
Claims (8)
- 純度99.99質量%以上のAgを1〜25質量%含有し、残部が純度99.99質量%以上のAuからなるAu−Agマトリックス合金に、該微量添加元素として、Caを5〜50質量ppm、Beを1〜20質量ppm及び/又は希土類元素を5〜90質量ppm含有せしめたAu−Ag合金からなることを特徴とするワイヤバンプ。
- 該微量添加元素として、Ge、Mg、Sr、Bi、Zn、Si、Ga、Sn、Sb、B及びLiの中から選ばれる少なくとも1種を10〜90質量ppm含有していることを特徴とする請求項1に記載のワイヤバンプ。
- 該微量添加元素として、Caを5〜50質量ppm、Beを1〜20質量ppm及び/又は希土類元素を5〜90質量ppm含有し、更にGe、Mg、Sr、Bi、Zn、Si、Ga、Sn、Sb、B及びLiの中から選ばれる少なくとも1種を10〜90質量ppm含有していること(ただし、B及びLiがそれぞれ単独の場合は、0.5〜40質量ppm)ことを特徴とする請求項1に記載のワイヤバンプ。
- 該AuマトリックスがAgを5〜25質量%含有させてなるAu−Ag合金であることを特徴とする請求項1〜3のいずれかに記載のワイヤバンプ。
- 該希土類元素がY、La、Ce、Eu、Nd、Gd及び/又はSmであることを特徴とする請求項1又は3に記載のワイヤバンプ。
- Pb系半田又はSn系半田と接合したことを特徴とする請求項1〜5のいずれかに記載のワイヤバンプ。
- Pbフリー系半田とフリップチップ接合したことを特徴とする請求項1〜5のいずれかに記載のワイヤバンプ。
- 融点が170℃〜260℃のPbフリーSn系半田とフリップチップ接合したことを特徴とする請求項1〜5のいずれかに記載のワイヤバンプ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2004287599 | 2004-09-30 | ||
JP2004287599 | 2004-09-30 | ||
PCT/JP2005/018024 WO2006035905A1 (ja) | 2004-09-30 | 2005-09-29 | ワイヤバンプ材料 |
Publications (2)
Publication Number | Publication Date |
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JP3994113B2 true JP3994113B2 (ja) | 2007-10-17 |
JPWO2006035905A1 JPWO2006035905A1 (ja) | 2008-05-15 |
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JP2006537825A Expired - Fee Related JP3994113B2 (ja) | 2004-09-30 | 2005-09-29 | ワイヤバンプ |
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US (1) | US20080075626A1 (ja) |
EP (1) | EP1811556A4 (ja) |
JP (1) | JP3994113B2 (ja) |
KR (1) | KR101002062B1 (ja) |
CN (1) | CN101032012A (ja) |
MY (1) | MY139238A (ja) |
TW (1) | TWI270950B (ja) |
WO (1) | WO2006035905A1 (ja) |
Families Citing this family (4)
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US8440137B2 (en) * | 2004-11-26 | 2013-05-14 | Tanaka Denshi Kogyo K.K. | Au bonding wire for semiconductor device |
JP4195495B1 (ja) * | 2007-11-06 | 2008-12-10 | 田中電子工業株式会社 | ボールボンディング用金合金線 |
JP2010123817A (ja) * | 2008-11-21 | 2010-06-03 | Fujitsu Ltd | ワイヤボンディング方法および電子装置とその製造方法 |
CN112725653A (zh) * | 2020-12-21 | 2021-04-30 | 有研亿金新材料有限公司 | 一种新型高塑性金基电刷材料及其制备方法 |
Family Cites Families (13)
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JPS62228440A (ja) * | 1986-03-28 | 1987-10-07 | Matsuda Kikinzoku Kogyo Kk | 半導体素子ボンデイング用金線 |
JP2778093B2 (ja) * | 1988-09-29 | 1998-07-23 | 三菱マテリアル株式会社 | 金バンプ用金合金細線 |
JP2814660B2 (ja) * | 1990-03-06 | 1998-10-27 | 三菱マテリアル株式会社 | 半導体装置のボンディング用金合金線 |
US5298219A (en) * | 1990-06-04 | 1994-03-29 | Tanaka Denshi Kogyo Kabushiki Kaisha | High purity gold bonding wire for semiconductor device |
JPH08325657A (ja) * | 1995-05-26 | 1996-12-10 | Tanaka Denshi Kogyo Kk | ボンディング用金線 |
JP3650461B2 (ja) * | 1996-04-04 | 2005-05-18 | 新日本製鐵株式会社 | 半導体素子用金合金細線 |
JP3328135B2 (ja) * | 1996-05-28 | 2002-09-24 | 田中電子工業株式会社 | バンプ形成用金合金線及びバンプ形成方法 |
JP3673368B2 (ja) * | 1997-05-23 | 2005-07-20 | 新日本製鐵株式会社 | 半導体素子用金銀合金細線 |
JPH1145900A (ja) * | 1997-07-25 | 1999-02-16 | Sumitomo Metal Mining Co Ltd | ボンディングワイヤ |
JP3633222B2 (ja) * | 1997-07-25 | 2005-03-30 | 住友金属鉱山株式会社 | ボンディングワイヤ |
JPH11126788A (ja) * | 1997-10-23 | 1999-05-11 | Tanaka Electron Ind Co Ltd | Icチップ接続用金合金線 |
JP2001230272A (ja) * | 2000-02-21 | 2001-08-24 | Nippon Avionics Co Ltd | 鉛フリーはんだ多層バンプを有するフリップチップ及び鉛フリー・フリップチップアセンブリ |
JP2003007757A (ja) * | 2001-06-18 | 2003-01-10 | Sumitomo Metal Mining Co Ltd | 半導体素子ボンディング用金合金ワイヤ |
-
2005
- 2005-09-29 WO PCT/JP2005/018024 patent/WO2006035905A1/ja active Application Filing
- 2005-09-29 EP EP05788208A patent/EP1811556A4/en not_active Withdrawn
- 2005-09-29 JP JP2006537825A patent/JP3994113B2/ja not_active Expired - Fee Related
- 2005-09-29 MY MYPI20054587 patent/MY139238A/en unknown
- 2005-09-29 TW TW94133898A patent/TWI270950B/zh not_active IP Right Cessation
- 2005-09-29 US US11/664,102 patent/US20080075626A1/en not_active Abandoned
- 2005-09-29 CN CNA2005800331056A patent/CN101032012A/zh active Pending
- 2005-09-29 KR KR20077006165A patent/KR101002062B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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TW200611357A (en) | 2006-04-01 |
TWI270950B (en) | 2007-01-11 |
WO2006035905A1 (ja) | 2006-04-06 |
MY139238A (en) | 2009-09-30 |
CN101032012A (zh) | 2007-09-05 |
JPWO2006035905A1 (ja) | 2008-05-15 |
EP1811556A1 (en) | 2007-07-25 |
EP1811556A4 (en) | 2009-08-05 |
US20080075626A1 (en) | 2008-03-27 |
KR101002062B1 (ko) | 2010-12-17 |
KR20070105298A (ko) | 2007-10-30 |
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