TWI270950B - Wire bump materials - Google Patents

Wire bump materials Download PDF

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Publication number
TWI270950B
TWI270950B TW94133898A TW94133898A TWI270950B TW I270950 B TWI270950 B TW I270950B TW 94133898 A TW94133898 A TW 94133898A TW 94133898 A TW94133898 A TW 94133898A TW I270950 B TWI270950 B TW I270950B
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TW
Taiwan
Prior art keywords
mass
alloy
ppm
bump
matrix
Prior art date
Application number
TW94133898A
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English (en)
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TW200611357A (en
Inventor
Michitaka Mikami
Takatoshi Arikawa
Original Assignee
Tanaka Denshi Kogyo Corp
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Publication of TW200611357A publication Critical patent/TW200611357A/zh
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Publication of TWI270950B publication Critical patent/TWI270950B/zh

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3013—Au as the principal constituent
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Description

1270950 九、發明說明： 【發明所屬之技術領域】 本毛明係有關適於利用連線銲接技術形成金屬突起的連線隆 起物材料。 【先前技術】 至於連接ic晶片或電晶體等的積體電路元件上的電轉塾與 TAB (Tape Automated Bonding)的引線或引導框架或喊基板上 的外部端子之綠，已知有連線銲接方法形成金屬突起的方 ^。此種連線隆起物方法，齡纖起物直接連接IG晶片之電極 =齡卜部端子，與崎接連線連接的情况概，因可降低接合 4刀之回度’而有適於製造高密度封裝體或薄型封裝體的優點。 .例如於IC晶片之電極部上形紐起物，使與對抗此隆起物的印刷 •電路基板之導體電路上的溶融銲麵合的规>{ (flip物）法 ‘或使”已進行錢銲的Cu膠帶溶融接合的輸送用膠帶法等。 等 ' 5爲止的此種連線隆起物材料，由所謂純度99· 99質量 j的Au 口金之必要條件，以高純度的&被使用作八以基體。 Η ;已使用回純度Au的連線隆起物材料，於超細綫上形成銲 球並進仃1C晶片鱗後，峨_挾持連線部分難斷連線時， 則於經予殘留於1C晶片上的銲球，亦即隆起物一側上，有尾部長 長的殘留銲球而成爲連接不良的主要原因之問題存在。至於如基 、號么報）或AU ·· 〇· 003〜5重量_合金（曰本特開平9—測76 5 1270950 戒公報）或^: 0. 001〜5重量^Pt、Pd或Ru合金（日本特開 平10 287936號公報）帛，已進行縮短尾部長度之研究。但是， Pd等的賴金屬係昂貴且99屬以上之高純度者需要特殊設備 ’，AU亦需較高的費用’故以99. 9%之純度較常被使用 ，故含有 ^里雜|所致。另外，若增加麟金屬之添加量時，會使毛細管
β接、A (capiliary)之内部受沾污，此沾污附着於連線上而形 成非為真球狀的銲球，產生_變硬且於A1銲塾正下方的Si晶 片龜裂的問題，故實用上以Au :丨_合金被使用著。 此種Au : 合金_有可使料形成㈣銲倾A· 合金隆起物間的AuAl化合物之成長延遲的優點，但是仍然於扯斷 連線之際會經常使尾部長度生_長者。糾，最近軟鲜操作有 在20(TC〜·。C高温進行的傾向，尤其無％之&系銲劑以於高温 操作的傾向細著。若輯作温度絲高科，於Μ,合金隆 起物方面，因有Au會迅速的溶化於銲劑内之銲舰㈣現象生 成’故不得不於嚴格的温度管理下進行軟銲操作。因此，已提古 ，丨農度的Au :酬合㈣被姻，响械巾轉球: 接時因會形成硬質銲球’而有對銲塾生成晶片損傷變大的問題， 又__動較大的問題，因杜述的毛崎墨錄置受 或尾部長度之問題等，以至未能實用化。 專利文獻1 ··日本專利第2, 737, 953號公報 專利文獻2:日本特開平9-321076號公報 1270950 專利文獻3 ··日本特開平ι〇一287936號公報 【發明内容】 發明欲解决的譯顥 本喬明係爲解決上述習用的Au連線隆起物材料所耳的尸η 點，而予完成者。本發明係以下述者為目的。 ⑴需使接合（銲接）至心銲墊的如吻合金隆起 形狀接近真圓。 、〒球 • (2) f可使接合至A1雜的Au-Ag合金隆起物之可靠信提高。 (3) 需縮短Au-Ag合金隆起物之尾部長度。 (4) 需提高耐鲜劑炫韻性。 、（5)需減少由連線_物狀的毛細管顧工具尖端或尖端附 近之孔洞被沾污的程度。 _ 解決課題而採的乎與 若依本發明時，係予提供下示的連線隆起物材料。 _ ⑴崎由Au絲賴餘加騎簡摘純度99 99質量 ^上的AU合金内，使含有純度99. 99質量％以上的Ag卜4〇質 f %而成的Au-Ag合金為特徵之連線隆起物材料。 ⑵以該微量添加_含有Ca㈣f量卿、&㈣質 卿及/或稀土元素5,s量卿為特徵 線隆起物材料。 < 心爾说 (3)以該微量添加元素係含有由
Ge、Mg、Sr、Bi、Zn、Si、Ga、 1270950
Sn Sb BAU 之中 述⑴記載的連線隆起物材料。 質里_為特徵之前 曰⑷以额量添加元素係含有^〜⑽旦 量ppm及/或稀土元素3〜9 、里ppm e 1〜2〇質 ㈣、一，、心二再:=:^ (惟，B及Li各自單獨時 種10 9〇質量_ (1)記載的連線隆起物材料/ ·、置ppm)為特徵之前述 (5)以使杨基體含有Ag 5 25質秋而成的a 特徵之前述⑴〜⑷記_連___。 為 之刖述⑵或⑷記载的連線隆起物材料。 荇破 ⑺以該連線隆起物材料係使托緖劑或 特徵之前述⑴〜⑻記载的連線隆起物材料。氣者為 ⑻以該連線隆起物她_ _ _劑與舰 為特徵之前述⑴〜⑻記載的連線隆起物材料。 口者 (9)以該連線隆起物材料係使魅17叱督c之㈣卜 錄劑與倒裝片接合者為特徵之前述⑴〜⑻記載的連線隆起物 材料。 發明的功效 以下就而使接合至A1銲墊的Au—Ag合金隆起物之軟質辉球形 狀接近真圓，予以說明。 1270950 以本發明之Au-Ag合金，因於大氣中形成輝球時可得軟質的 真圓球，故不致損傷A1銲墊之晶片。另外，在大氣情接至^ 鮮墊時，Ca、Be或稀土讀、或Ge、Mg、Sr、m、m
Sn、Sb、B或Li之元素群組的微量添加元素受氧化而不成爲異形 的銲球。因此，即使銲墊面積變小㈣⑽準的位置以指定面積 之真圓可準確的進行隆起物接線用之銲球銲接。 其次，就使Au-Ag合金隆起物之接合至M雜的可靠性提高 之功效，予以説明。 於本發明之高純度的Au-Ag合金基體方面，因使於純ai或 A1合金之A1銲墊上的A1與Au間之金屬間化合物遲緩形成，而於 此金屬間化合物内不生成A福，故可使銲接錢鲜塾之可靠性 提高。A1銲墊若為純A1或以M為主成分的合金（例如，ai :別 %Cu合金等）日钟可。再者，於靖脂成科，因不生成ai及
Au間之金制化合物，故可社聽樹財之㈣元素引起的腐 触0 其次，就可縮短AU-Ag合金隆起物之尾部長度引起的功效， 予以説明。 ▲於本發明之冋純度Au—Ag合金基體方面，即使微量添加元素 =、、屯Au基體可更加奏效，使以微量添加元素與雜質元素之合計僅 3最大lGGpprn _ (惟Ag成分除外），亦可縮小祕物之尾部長度 的分散性。若使尾部長度的分紐雜㈣，愈可製造出品質均 1270950 勻的隆起物，故即使製造多數個隆起物亦可增大頸部强度差，且 獲得可使穩定的功效。 其次，就可使Au-Ag合金隆起物之耐銲劑熔蝕性提高的功效， 予以説明。 於本發明之高純度Au-Ag合金基體方面，為使耐銲劑熔蝕性 提高，即使銲接銲劑與倒裝片，Au—Ag合金隆起物本身亦不致消失 ㈣中。對特定的銲騎料可使用的溫度範目較廣，故對鲜 鲁接銲劑之操作管理即可較寬鬆。而且，因可縮小隆起物之尾部長 度的分散性，可選擇性的僅使Au-Ag合金隆起物之尾部部分消失， 喊可漸_小尾部長叙分餘。尤其Au-Ag合金基體中的Ag 右於5 25質之範圍時，因可使高温下的耐銲劑炼餘性再提 门故可製出已穩定的倒裝片構造。另外，因财虫於鲜劑中的如 _等疋素减少，故於銲劑中不致生成脆弱的化合物。 _ 【發明内容】 _ 本毛明之連線隆起物材料係由Ag—Ag合金而成，且含有微量 加元素此時，含Ag量為14〇質量％，宜為卜奶質量％ 之純度為99· 99質量％之以上。 於本發明卿的微量添加元素之第丨賴方面，係採用ca、
Be及/或稀土元素（亦稱作群組A之元素）。此等元素可單獨或組 合二種以上使用。此等元素之含量，若為Ca時，採用5〜50質量 聊，宜為8〜35 f量酬。料&時，採用1〜2G質量_，宜為 1270950 3〜18質量ppm。若為稀土元 " 用複數的此等微量添加元素時，用5’質量酬。若為採 宜為50質量ppm以下。 則” σ 5十I為90質量Ppm以下， 至於稀土元素，宜為採用由γ、1 中選出的至少一種。 Ce、Eu、Nd、Gd&Smi 於本發明所用的微量添加 nbBi、mSn之;;他形悲方面，宜為可採用
κ Sb、B&Li之中選出的至少
種此4凡素（亦稱作群組B , 疋兀素）之含I為10〜90質量ppm。 尤且被採用的元素為 於抓用Ge、Β!、Sl、Sn及/或Sb (亦稱作群組β1之元素）時， 其含量為10〜90質量ppm，宜爲15〜6〇質量_。 若為含有複數的前述群組B之元素時，難合計含量為9〇質 量ppm以下，宜為50質量ppm以下。 於本發明所用的微量添加元素之再一其他形態方面，則採用 群組A之元素與群組B之元素的組合。此時，群組a之元素的含 量，若為Ca時，採用5〜50質量ppm，宜為8〜35質量ppm。若為 Be時’採用1〜20質量ppm，宜為3〜18質量ppm。若為稀土元素時， 則採用3〜90質量ppm。若為採用複數的群組A之元素時，則其合 計含量為90質量ppm以下，宜為50質量ppm以下。 於群組B之元素方面，該元素僅為B及/或Li (亦稱作群組 B2之元素）時，其含量為0. 5〜40質量ppm，宜爲〇· 5〜15質量ppm。 1270950 右為知用複數的群組B2之元素時，則其合計含量宜為15質量ppm 以下。 於含有群組A、群組B1、群組B2時，該群組B2之元素含量為 40夤畺ppm，宜爲〇· 5〜π質量ppm。另外，此時之合計含量 為9〇質量ppm以下，宜為50質量ppm以下。 ”人就舄使接合至A1銲塾的au-Ag合金隆起物之銲球形狀 接近真圓的作用，予以說明。
通常，由Au及微量添加元素所構成的純度99. 99質量％以上 之Au合金係料製得真球，Au—數獅合金亦於大氣巾容易製得 真1。若為Au-Ag合金睁，由Ag容易包住高温大氣中的氧，若含 Ag量增多時，職量添加綠受氧化而料職硬質的異形鲜球 ，銲接時㈣A1銲墊造成損傷。因此將含Ag量之上限設成4〇% =下’即使在大氣中進行球銲亦可於A1輝墊上製得真圓。再者， 藉由域純度99· 99負量％以上之Ag，使可於Au内含有高濃度的 Ag ’亦可製得軟質的銲球，且將&設成5〜5() f量_，將以設 成〇負里ppm及/或將稀土元素設成5〜90質量ppm，或微量添 力 Ge Mg Sr Bi、Zn、Si、Ga、Sn、Sb、B 或 U 之至少—種， 共計1〇〜⑽質量_(惟，B及Li各自單獨時，〇· 5〜40質量_)， 即可得真圓。 k 前者的微量添加元素群組（群組A元素）對Au_Ag基體之功 效較後者之群組B的元素者有效。在此，前者的微量添加元素群 12 i 1270950 組之中選擇Ca為5〜50質量ppm的理由，係於未滿5質量_ 時A^u Ag σ金隆起物較難於Al銲塾上使鮮球形狀形成接近真圓 ’而右超過5G i里ppm時，則銲球形狀較易壓扁所致❿及稀土 元素之上限下限理由亦係相同的。稀土元素之中，尤以Y、^、
Ce、Eu或Nd之兀素於丨〇~9〇質量酬之範圍可較易製得穩定的真 圓。另-方面，製作與後者之Au的共晶合金之元素群組在對 基體的大氣中，雖雜前者之群組的元素較難獲得真球之功效， 但若含有 Ge、Mg、Sr、Bi、Zn、Si、Ga、Sn、Sb、BsiUk^ :種’共計10~90質量ppm (惟，B及u各自單獨時，〇· 5〜仙質 量PP:)時’使已對應於小節距的Au_Ag合金隆起物之鮮球形狀可 接近實用上^成問題的真圓，加上可滿足純度99. 99質量％以上 之^合金（惟，^成分除外）。若此等元素未達10質量_(惟， 各自單獨時’ Q. 5G f量_)時’則未能製得令人滿意的 真圓。 另外，若超過90ppm時，則未能滿足99· 99質量％以上之Au 合金（惟’ Ag成分除外）。因此，除有未能以所謂「高純度的Au」 ^表示的不枝外，於未能均⑽合金辦，即有Au★合金隆 起物較難於A1銲塾上使銲剌嫌形成接近真_情形。尤其，b 2各自單獨時，若超過40質量_時，則較難將鲜球雜形 成真圓。 前者與後者 於純度99· 99質量％以上之Au合金内，因此等的 13 I270950 之微量添加元素群組及不可避免的雜質（惟，怂成分除外）即或 最多僅含未滿100質量ppm，故不論何時均可製得穩定的真圓。 其次，就需可使接合至A1銲墊的合金隆起物之可靠信 提高的作用，予以說明。
Au-Ag合金基體較純金基體或Au〜Pd合金基體可使A1銲墊上 的A1及Au間的金屬間化合物之成長遲緩，且於此金屬間化合物 内以銲接連線並不形成Audi係為人所知的。即使以本發明之已添 φ 加微量添加元素群組的隆起物用之Au-Ag合金基體，已知微量添 加元素群組亦停留於基體中而不生成與…不反應的純金基體或 Au-Pd合金基體類AmAl。如此，Au-Ag合金基體亦較Au基體或 Au-Pd合金基體可使A1及Au間的金屬間化合物之成長遲緩。又， 已添加指定量的上述微量添加元素群組之Au一Ag合金基體係形成 真圓而且，於微量添加元素最多僅含i〇〇ppm時，因可保持纯度 99.99吳里％以上之au合金（惟，竑成分除外），與銲接連線情 φ 瓜同樣的可使接合至A1銲墊的Au-Ag合金隆起物之可靠信提高。 且，即使含有 Ge、Mg、Sr、Bi、Zn、Si、Ga、Sn、Sb、B 或 Li 之至少-種以上，共計〇·_〜〇· 3質量綱，此等元素群組因於通 常的炫解·鑄造操作中會微細的分散於Au-Ag合絲體，可知並 無對A1銲墊之晶片損傷問題。 其次’就需縮短Au-Ag合金隆起物之尾部長度的作用，予以 說明。 14 1270950 本發明人等認祕起物之尾部長度的分散㈣在於隆起物連 線本身的强度與鋪__賴之差異（稱此爲「頸部强度差 :」）。於Au-Ag合金中的Ag未滿}質量％方面，即使僅添加指定 量的微量添加元素’ Au-Ag合金基體本身亦與純仏基體同樣的較 易退火Uniting)。隆起物連線已退火時，連線强度麵且頸 部强度差錢小。絲’ _鱗線之齡掉驗置即成為零零 散散的，尾部長度容易形成參差不齊。耻藉由制指定比例的 _ AU~Ag合金基體，亦可較純金基體或Au—pd合金基體增大頸部强 度差異。又，若未添加指定量程度的微量添加元素於Μ—知合金 基體中時’則Au-Ag合金因由高純度的Au及高純度的Ag所構成， 熱影響部會變長。結果因會使尾部長錢得參差不齊，故須於 Au-Ag合錄财添加微量添加元素。由辦强度差㈣觀點，於 .Au-Ag合金基體之較宜的含Ag量係於5—25質量％之範圍。若使 •含有^ 5〜5〇質量酬、含有Be卜20質量·或稀土元素5〜9〇 鬌質量ppm之至少-種的元素群組時，即使微量亦可縮短熱影響部 之功效’較純金基體或Au-Pd合金基體大。尤其，稀土元素中的卜 La、Ce、Eu或Μ在縮短熱影響部之功效係較大的。但是，此等元 素若未滿下限時’即或賴Au—Ag合錄财的含仏量在5〜25 質里众細’因歸響部變長，故需訂出規定的下限量。 且，此等元素軸即使㈣上限亦具有可驗歸響部之功 效’但如上述般，由銲球形狀容易變形等的理由，需予限制上限。 15 1270950 另一方面，Ge、Mg、Sr、Bi，、Si、Ga、Sn、Sb、BsiUiu 素群組若未能添加較多量時，則未__能縮短熱影響部之功 效’若此等元素未達l〇ppm質量時，縱或八㈣合金基體中的含 Ag里在5〜25質里％之_’亦未能獲得縮短熱影響部之令人滿意 的功效。另外，即使使含有超過9〇卿至〇 3質量，雖然亦可得 縮=熱影_之功效，若超過9()_時，則未能滿足純度99.⑽ 質里/6以上之Au δ金（惟’ Ag成分除外）。於纯度99. 99質量％ _ MJi之Au合金方© ’此等的前者及後者之微量添加元素群組⑽，
Ag成分除外）因最多僅含未滿1〇〇 _質量，故不論何時均可得 縮短以穩定的歸彡響敎魏。尤其，於Au★合金基體中的含
Ag里右在5〜25質量％域u時，可知最能獲得使歸響部縮短的 功效。， -其次，就需|^南耐銲劑溶餘性的作用，予以說明。 • 至於銲劑材料，已知有以Pb為主成分的合金（Pb合金、Pb : • 〇· 3質量％Sn合金、Pb: 5質量％Sn合金）或無Pb合金（Sn合金、
Sn ·· 3· 5質量％Ag合金、Sn : 〇· 8質量％Cu合金、Sn : 0· 5質量％ Ni合金、Sn : 1 · 0質量％Zn合金，Sn : 3· 5質量％Ag : 〇· 5質量 %Cu合金、Sn : 20質量％In合金等）。Au-Ag合金基體係對此等 銲劑材料較純Au基體可提高銲劑熔蝕性，尤其可知提高銲劑在高 温下的熔触性。尤其，Au-Ag合金基體中的含Ag量若在5〜25質量 /6之範圍時，則可更提南辉劑在南温下的溶姓性。添加元素之添 16 1270950 加量因係微量，故對Au-Ag合金基體中的耐銲劑溶I虫性之影響力 較少，經予添加指定量程度的微量添加元素之Au-Ag合金基體， 不論何者均較純金基體或Au-Pd合金基體可使耐銲劑熔蝕性提高。 【實施方式】 實施例 於99· 999質量％之兩純度金及99· 999質量％之高純度Ag(單 位為質量％)内添加微量添加金屬（單位為質量ppm)至配合成表 ❿ 内圯載的數值之實施品的成分組成，以真空溶解爐進行溶解鑄造 。將此熔液進行拉絲加工，最後熱處理至線徑成25# m。在大氣 中使用曰本新川股份公司製造的連線焊接機（UTC-400型），在放 電夺間0· 3宅秒對此極細線製作銲球於邊長log# m的純μ銲墊 上，以通用條件進行連線銲接（銲球直徑62//m、銲球之潰散直徑 8〇«)時’所有的銲球係經予形成於邊長100_的A1鮮塾内。 其結果示於表内。 •—在此’「銲球形成性」係製作1〇〇個銲球，表示出以棚倍的 貫體顯微鏡觀察該銲球之外觀時的結果，良好者以◎表示，可使 者以有⑶孔之#球以〇表示，縮孔或銲球變形且未能形成鲜球 1表7TT。又’「銲_球直徑」係使用奥林巴斯股份有限公司 =的剛長顯微鏡（TM_MJS型）並各以100個於縱向⑺與橫向 二^定銲球於A1轉上的大小，取其平均值。，以最小 一-人法求取該之平均值的偏差（以「銲接鲜球穩定性」表示）， 17 Ϊ270950 以該值在〇· 96以上者判定兔α — Λ x _ 為〇’在〇· 90〜未滿〇· 96者判定為Ο， 在未滿0. 90者判定^。又，「 J疋為〇 的剪切強度測試㈣9 7刀強度」係採用_公司製造 主度賴（PC'2働），各以100根於上側方向⑺㈣ 時的斷裂強度之平均值。 ）拉伸 度分散性鬥〉… 守、起物之尾部長度為「頸部高 部Μ峡，並以平均值麵。因此，以此「頸 同又刀政性（靶圍）」未滿20#卬者 ㈣者判定為〇’ 30咖以上者判定為n 以働倍的實體顯微鏡觀察各對⑽個觀察銲球於A1銲== =斤發生的_之外觀時的結果，以她表示，未發生龜裂者以 ◎表不，龜裂數自1個至4個者以〇表示，5個以上者以x表示。 日另外加熱5式驗」係使1〇〇個Au合金隆起物與如：$質 里众Ag合金對向，以倒裝片構造保持後，於湖。c加熱如秒鐘 進行平坦化熱處理。因此，各對1〇個以侧倍的實麵微鏡觀察 平坦化熱處爾__之5_以上者狀觸，3G〜未滿50% 者判定為O’ 10〜未滿3〇%者欺為χ。此時，平坦化熱處理前的 截面積之50%以上為◎者，係不論何者扯掉時出現的鬚狀尾部部 分’因係溶解於如：3. 5質量％之仏合金中，故隆起物高度於 銲劑中可予均勻的對齊。另—方面，平坦化熱處理前的截面積之 10%以下為X者’即使連隆起物本體亦會熔解而消失於如：3 5 質量％2Ag合金中，故未能進行隆起物銲接。 18 1270950 【圖式簡單説明】 無 【主要元件符號說明】 1270950
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20 1270950
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X [> ο ◎ 姆 i Si m i Mf | n i w 1 i to n 1 s U1 n | » 賽 VO n ? oo » 譜 窘 鱅 m $ On Ϊ L/i Mf f $ LO Mf 1 赛 to m S 賽 窘 i n 1 & 喊 a 姆 Mf 譜 S 邮 1 | a M Mf | OO 崦 s 害 1 識f ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ o ◎ O ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ gi 1 1 1 1 a bo §5 bo $ a to a bo s i-〇 po On ON s ON po Ln ON ON LO oo bo 3 v〇 s Im ON 2 3 Ol a to On 2 as 〇\ po On bo 3 X 1 脚 m 1 1 1 1 to V〇 $ to $ $ tsJ $ i-o s Lo s Lr\ $ Lo os oo bo s to S s ίο §5 a ίο a Lo a $ to S a bo s Ln $ Ln s oo a Ln 1 1 1 1 § oo 〇 l-M O v〇 g § O 〇 OO § g VO g § O VO o s 〇 o g (X o s LO g 落 oo S §§ S oo o v〇 § g S TO g oo g TO δ oo S s 1 « I I 沛 i# Λ ο S 1 Λ ο 家 ο ν〇 〇\ ΙΙΛ o 〇 o o ◎ o o ◎ o O ◎ ◎ o o ◎ o o 〇 o ◎ o o 〇 o o o 〇 1 w 1 1 1 1 δ v〇 σ\ £ P Lo s s >〇 Lr\ 2 VO Ln Lo P VO S v〇 ί-Λ 5 s δ s s 二 s ε 5 I 3. iS 慧 1 1 1 1 o o O 〇 o o o O 〇 o o o o o o 〇 〇 o o o O o 〇 o o o o 1 掛 m m > ss KJ% ΙΙΛ 1 Λ ΚΑ ο ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ 1 莖 w 1 1 1 1 to Co OO to CO oo C5 oo 5； to oo 3 擷 ss m 砘 Fff IIV 1 Λ w Λ ◎ 〇 ◎ ◎ 〇 ◎ ◎ ◎ ◎ ◎ o ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ o ◎ ◎ 1 淺 1 1 I 1 § oo oo Co § -0 oo ON S oo OJ * 藤 B 霞 i 1 ΙΙΛ — 1 1 Λ Ρ ΙΙΛ 1 ΙΙΛ ◎ o ◎ ◎ o ◎ ◎ > ◎ ◎ o ◎ ◎ D> ◎ ◎ I> ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ 1 w 【fl 23

Claims (1)

1270950 十、申請專利範圍： 1 · -種連雜起物材料，其特徵在於於由Au基體與微量添加元 素所構成的純度"· 99質量％以上的Au合金内，使含有純度99. 99 質量％以上的Ag 1〜4〇質量％而成的Au_Ag合金而成。 2. 根據請求項1所述的連線隆起物材料，該微量添加元素係含有 Ca 5,質量ppm、Be㈣質量_及/或稀土元素5〜9〇質量卿。 3. 根據請求項i所述的連線隆起物材料，該微量添 由^取^^^^^及“之中選出有至 少一種10〜90質量ppm。 叼主 項1所述崎線_物材料，該微量添加元素係含有 里ppm、Be 1〜2〇質量酬及/或稀土元素3〜 ^含有由 Ge、Mg、Sr、Bi、Zn、Si、Ga、Sn、sbP 出的至少一種1〇〜90曾旦 .^ L1之中k 質量_)。 〇貝里卿(惟，肢^各自單獨時，則祀〜40 ::==:=一一 6·根據請求項2或4所述的連· Ce、Eu、Nd,Gd_Sm。 _土讀係 Y、La、 7·根據請求項1至4之杯 起物材料係㈣者―’該連線隆 8·根據請求項1至4 … 起物材料係使益ρ6ς / J、所述的連線隆起物材料，該連線隆 、卜Sn系銲劑與倒裝片接合者。 24 1270950 9·根據請求項1至4之任一項所述的連線隆起物材料，該連線隆 起物材料係使熔點170°C〜260°C之無Pb-Sn系銲劑與倒裝片接合 者0
25
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MY140911A (en) * 2004-11-26 2010-01-29 Tanaka Electronics Ind Au bonding wire for semiconductor device
JP4195495B1 (ja) * 2007-11-06 2008-12-10 田中電子工業株式会社 ボールボンディング用金合金線
JP2010123817A (ja) * 2008-11-21 2010-06-03 Fujitsu Ltd ワイヤボンディング方法および電子装置とその製造方法
CN112725653A (zh) * 2020-12-21 2021-04-30 有研亿金新材料有限公司 一种新型高塑性金基电刷材料及其制备方法

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JPS62228440A (ja) * 1986-03-28 1987-10-07 Matsuda Kikinzoku Kogyo Kk 半導体素子ボンデイング用金線
JP2778093B2 (ja) * 1988-09-29 1998-07-23 三菱マテリアル株式会社 金バンプ用金合金細線
JP2814660B2 (ja) * 1990-03-06 1998-10-27 三菱マテリアル株式会社 半導体装置のボンディング用金合金線
US5298219A (en) * 1990-06-04 1994-03-29 Tanaka Denshi Kogyo Kabushiki Kaisha High purity gold bonding wire for semiconductor device
JPH08325657A (ja) * 1995-05-26 1996-12-10 Tanaka Denshi Kogyo Kk ボンディング用金線
JP3650461B2 (ja) * 1996-04-04 2005-05-18 新日本製鐵株式会社 半導体素子用金合金細線
JP3328135B2 (ja) * 1996-05-28 2002-09-24 田中電子工業株式会社 バンプ形成用金合金線及びバンプ形成方法
JP3673368B2 (ja) * 1997-05-23 2005-07-20 新日本製鐵株式会社 半導体素子用金銀合金細線
JPH1145900A (ja) * 1997-07-25 1999-02-16 Sumitomo Metal Mining Co Ltd ボンディングワイヤ
JP3633222B2 (ja) * 1997-07-25 2005-03-30 住友金属鉱山株式会社 ボンディングワイヤ
JPH11126788A (ja) * 1997-10-23 1999-05-11 Tanaka Electron Ind Co Ltd Ｉｃチップ接続用金合金線
JP2001230272A (ja) * 2000-02-21 2001-08-24 Nippon Avionics Co Ltd 鉛フリーはんだ多層バンプを有するフリップチップ及び鉛フリー・フリップチップアセンブリ
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