CN104254557B - 用于纳米平版印刷术的聚丙交酯/含硅嵌段共聚物 - Google Patents

用于纳米平版印刷术的聚丙交酯/含硅嵌段共聚物 Download PDF

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CN104254557B
CN104254557B CN201380013688.0A CN201380013688A CN104254557B CN 104254557 B CN104254557 B CN 104254557B CN 201380013688 A CN201380013688 A CN 201380013688A CN 104254557 B CN104254557 B CN 104254557B
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substrate
silicon
block copolymer
block
polymer
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Chinese (zh)
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CN104254557A (zh
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C·J·艾里森
C·G·威尔森
J·卡申
C·M·巴特斯
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University of Texas at Austin
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University of Texas at Austin
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D167/00—Coating compositions based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Coating compositions based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/68—Polyesters containing atoms other than carbon, hydrogen and oxygen
    • C08G63/695—Polyesters containing atoms other than carbon, hydrogen and oxygen containing silicon
    • C08G63/6952—Polyesters containing atoms other than carbon, hydrogen and oxygen containing silicon derived from hydroxycarboxylic acids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
    • B05C21/005—Masking devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F112/00—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F112/02—Monomers containing only one unsaturated aliphatic radical
    • C08F112/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F112/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/02—Alkylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2810/00—Chemical modification of a polymer
    • C08F2810/40—Chemical modification of a polymer taking place solely at one end or both ends of the polymer backbone, i.e. not in the side or lateral chains
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24851—Intermediate layer is discontinuous or differential
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polyesters Or Polycarbonates (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Silicon Polymers (AREA)
CN201380013688.0A 2012-02-10 2013-02-07 用于纳米平版印刷术的聚丙交酯/含硅嵌段共聚物 Expired - Fee Related CN104254557B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261597329P 2012-02-10 2012-02-10
US61/597,329 2012-02-10
PCT/US2013/025160 WO2013119820A1 (en) 2012-02-10 2013-02-07 Polyactide/silicon-containing block copolymers for nanolithography
US13/761,763 US9120117B2 (en) 2012-02-10 2013-02-07 Polylactide/silicon-containing block copolymers for nanolithography
US13/761,763 2013-02-07

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CN104254557A CN104254557A (zh) 2014-12-31
CN104254557B true CN104254557B (zh) 2016-06-29

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US (2) US9120117B2 (enExample)
JP (1) JP6228932B2 (enExample)
KR (1) KR101945513B1 (enExample)
CN (1) CN104254557B (enExample)
SG (1) SG11201404416RA (enExample)
WO (1) WO2013119820A1 (enExample)

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SG11201404415VA (en) 2012-02-10 2014-08-28 Univ Texas Using chemical vapor deposited films to control domain orientation in block copolymer thin films
FR3014876B1 (fr) * 2013-12-13 2017-03-31 Arkema France Procede de realisation d'un film de copolymere a blocs sur un substrat
JP6264148B2 (ja) * 2014-03-28 2018-01-24 Jsr株式会社 パターン形成用組成物及びパターン形成方法
US9489974B2 (en) 2014-04-11 2016-11-08 Seagate Technology Llc Method of fabricating a BPM template using hierarchical BCP density patterns
US10259907B2 (en) 2015-02-20 2019-04-16 Az Electronic Materials (Luxembourg) S.À R.L. Block copolymers with surface-active junction groups, compositions and processes thereof
JP6413888B2 (ja) * 2015-03-30 2018-10-31 Jsr株式会社 パターン形成用組成物、パターン形成方法及びブロック共重合体
KR102463893B1 (ko) * 2015-04-03 2022-11-04 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
US9982097B2 (en) * 2016-02-11 2018-05-29 International Business Machines Corporation Thin film self assembly of topcoat-free silicon-containing diblock copolymers
WO2017147185A1 (en) * 2016-02-23 2017-08-31 Board Of Regents The University Of Texas System Block copolymers for sub-10 nm patterning
JP2018046202A (ja) 2016-09-15 2018-03-22 東芝メモリ株式会社 パターン形成方法、自己組織化材料、半導体装置の製造方法
WO2018135455A1 (ja) 2017-01-19 2018-07-26 日産化学工業株式会社 微細相分離パターン形成のための下層膜形成組成物
KR102448940B1 (ko) * 2017-01-19 2022-09-30 닛산 가가쿠 가부시키가이샤 미세상분리 패턴형성을 위한 자기조직화막 형성 조성물
CN108559084B (zh) * 2018-04-13 2020-12-04 华东理工大学 一种聚乳酸基疏水薄膜的制备方法
US11307496B2 (en) 2019-11-19 2022-04-19 International Business Machines Corporation Metal brush layer for EUV patterning
CN111253556B (zh) * 2020-03-20 2022-02-18 南京工业大学 一种功能化可回收高分子均聚物及其制备方法与应用

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CN101550229A (zh) * 2009-05-12 2009-10-07 南开大学 聚乙丙交酯的制备与硅端基剪切的方法

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US20150353763A1 (en) 2015-12-10
US9834700B2 (en) 2017-12-05
KR101945513B1 (ko) 2019-02-07
JP2015511402A (ja) 2015-04-16
JP6228932B2 (ja) 2017-11-08
US9120117B2 (en) 2015-09-01
KR20140133530A (ko) 2014-11-19
SG11201404416RA (en) 2014-08-28
CN104254557A (zh) 2014-12-31
US20130266780A1 (en) 2013-10-10
WO2013119820A1 (en) 2013-08-15

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Granted publication date: 20160629