SG11201404416RA - Polyactide/silicon-containing block copolymers for nanolithography - Google Patents

Polyactide/silicon-containing block copolymers for nanolithography

Info

Publication number
SG11201404416RA
SG11201404416RA SG11201404416RA SG11201404416RA SG11201404416RA SG 11201404416R A SG11201404416R A SG 11201404416RA SG 11201404416R A SG11201404416R A SG 11201404416RA SG 11201404416R A SG11201404416R A SG 11201404416RA SG 11201404416R A SG11201404416R A SG 11201404416RA
Authority
SG
Singapore
Prior art keywords
polyactide
nanolithography
silicon
block copolymers
containing block
Prior art date
Application number
SG11201404416RA
Other languages
English (en)
Inventor
Christopher John Ellison
Carlton Grant Willson
Julia Cushen
Christopher M Bates
Original Assignee
Univ Texas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Texas filed Critical Univ Texas
Publication of SG11201404416RA publication Critical patent/SG11201404416RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D167/00—Coating compositions based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Coating compositions based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/68—Polyesters containing atoms other than carbon, hydrogen and oxygen
    • C08G63/695—Polyesters containing atoms other than carbon, hydrogen and oxygen containing silicon
    • C08G63/6952—Polyesters containing atoms other than carbon, hydrogen and oxygen containing silicon derived from hydroxycarboxylic acids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
    • B05C21/005—Masking devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F112/00—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F112/02—Monomers containing only one unsaturated aliphatic radical
    • C08F112/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F112/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/02—Alkylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2810/00—Chemical modification of a polymer
    • C08F2810/40—Chemical modification of a polymer taking place solely at one end or both ends of the polymer backbone, i.e. not in the side or lateral chains
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24851—Intermediate layer is discontinuous or differential
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polyesters Or Polycarbonates (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Silicon Polymers (AREA)
SG11201404416RA 2012-02-10 2013-02-07 Polyactide/silicon-containing block copolymers for nanolithography SG11201404416RA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261597329P 2012-02-10 2012-02-10
PCT/US2013/025160 WO2013119820A1 (en) 2012-02-10 2013-02-07 Polyactide/silicon-containing block copolymers for nanolithography
US13/761,763 US9120117B2 (en) 2012-02-10 2013-02-07 Polylactide/silicon-containing block copolymers for nanolithography

Publications (1)

Publication Number Publication Date
SG11201404416RA true SG11201404416RA (en) 2014-08-28

Family

ID=48948005

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201404416RA SG11201404416RA (en) 2012-02-10 2013-02-07 Polyactide/silicon-containing block copolymers for nanolithography

Country Status (6)

Country Link
US (2) US9120117B2 (enExample)
JP (1) JP6228932B2 (enExample)
KR (1) KR101945513B1 (enExample)
CN (1) CN104254557B (enExample)
SG (1) SG11201404416RA (enExample)
WO (1) WO2013119820A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201404415VA (en) 2012-02-10 2014-08-28 Univ Texas Using chemical vapor deposited films to control domain orientation in block copolymer thin films
FR3014876B1 (fr) * 2013-12-13 2017-03-31 Arkema France Procede de realisation d'un film de copolymere a blocs sur un substrat
JP6264148B2 (ja) * 2014-03-28 2018-01-24 Jsr株式会社 パターン形成用組成物及びパターン形成方法
US9489974B2 (en) 2014-04-11 2016-11-08 Seagate Technology Llc Method of fabricating a BPM template using hierarchical BCP density patterns
US10259907B2 (en) 2015-02-20 2019-04-16 Az Electronic Materials (Luxembourg) S.À R.L. Block copolymers with surface-active junction groups, compositions and processes thereof
JP6413888B2 (ja) * 2015-03-30 2018-10-31 Jsr株式会社 パターン形成用組成物、パターン形成方法及びブロック共重合体
KR102463893B1 (ko) * 2015-04-03 2022-11-04 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
US9982097B2 (en) * 2016-02-11 2018-05-29 International Business Machines Corporation Thin film self assembly of topcoat-free silicon-containing diblock copolymers
WO2017147185A1 (en) * 2016-02-23 2017-08-31 Board Of Regents The University Of Texas System Block copolymers for sub-10 nm patterning
JP2018046202A (ja) 2016-09-15 2018-03-22 東芝メモリ株式会社 パターン形成方法、自己組織化材料、半導体装置の製造方法
WO2018135455A1 (ja) 2017-01-19 2018-07-26 日産化学工業株式会社 微細相分離パターン形成のための下層膜形成組成物
KR102448940B1 (ko) * 2017-01-19 2022-09-30 닛산 가가쿠 가부시키가이샤 미세상분리 패턴형성을 위한 자기조직화막 형성 조성물
CN108559084B (zh) * 2018-04-13 2020-12-04 华东理工大学 一种聚乳酸基疏水薄膜的制备方法
US11307496B2 (en) 2019-11-19 2022-04-19 International Business Machines Corporation Metal brush layer for EUV patterning
CN111253556B (zh) * 2020-03-20 2022-02-18 南京工业大学 一种功能化可回收高分子均聚物及其制备方法与应用

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2986509B2 (ja) * 1989-05-26 1999-12-06 三井化学株式会社 変性ポリエステル樹脂組成物、その製造方法、およびその用途
JP3394347B2 (ja) * 1994-12-28 2003-04-07 株式会社島津製作所 生分解性ポリエステル組成物及びその成型品
KR20010006342A (ko) 1997-04-14 2001-01-26 나까또미 이찌로 말단에 관능기를 가지는 폴리메타크릴계 중합체 및 그의 조성물
US8101261B2 (en) 2008-02-13 2012-01-24 Micron Technology, Inc. One-dimensional arrays of block copolymer cylinders and applications thereof
JP2009255497A (ja) 2008-03-18 2009-11-05 Fujifilm Corp 可撓性基板上ミクロ相分離構造体、及びその製造方法
US8114301B2 (en) * 2008-05-02 2012-02-14 Micron Technology, Inc. Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
US8268545B2 (en) * 2008-06-09 2012-09-18 Seagate Technology Llc Formation of a device using block copolymer lithography
CN101503497B (zh) * 2009-03-02 2010-08-25 江南大学 一种星型嵌段酸敏性纳米胶束的制备方法
CN101550229B (zh) 2009-05-12 2012-11-21 南开大学 聚乙丙交酯的制备与硅端基剪切的方法
JP5484817B2 (ja) * 2009-08-04 2014-05-07 株式会社東芝 パターン形成方法及び半導体装置の製造方法
KR20130039727A (ko) 2010-03-18 2013-04-22 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 규소 함유 블록 공중합체, 합성 방법 및 용도
SG11201404415VA (en) * 2012-02-10 2014-08-28 Univ Texas Using chemical vapor deposited films to control domain orientation in block copolymer thin films

Also Published As

Publication number Publication date
US20150353763A1 (en) 2015-12-10
US9834700B2 (en) 2017-12-05
KR101945513B1 (ko) 2019-02-07
JP2015511402A (ja) 2015-04-16
JP6228932B2 (ja) 2017-11-08
US9120117B2 (en) 2015-09-01
KR20140133530A (ko) 2014-11-19
CN104254557B (zh) 2016-06-29
CN104254557A (zh) 2014-12-31
US20130266780A1 (en) 2013-10-10
WO2013119820A1 (en) 2013-08-15

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