CN104246002B - 银系圆筒靶材及其制造方法 - Google Patents

银系圆筒靶材及其制造方法 Download PDF

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Publication number
CN104246002B
CN104246002B CN201280071819.6A CN201280071819A CN104246002B CN 104246002 B CN104246002 B CN 104246002B CN 201280071819 A CN201280071819 A CN 201280071819A CN 104246002 B CN104246002 B CN 104246002B
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CN
China
Prior art keywords
silver
extrusion
cylindrical
target
molten metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280071819.6A
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English (en)
Chinese (zh)
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CN104246002A (zh
Inventor
小见山昌三
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Publication of CN104246002A publication Critical patent/CN104246002A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES, PROFILES OR LIKE SEMI-MANUFACTURED PRODUCTS OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C23/00—Extruding metal; Impact extrusion
    • B21C23/002—Extruding materials of special alloys so far as the composition of the alloy requires or permits special extruding methods of sequences
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Metal Extraction Processes (AREA)
  • Extrusion Of Metal (AREA)
  • Electroluminescent Light Sources (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
CN201280071819.6A 2012-03-27 2012-11-14 银系圆筒靶材及其制造方法 Expired - Fee Related CN104246002B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-071328 2012-03-27
JP2012071328A JP5472353B2 (ja) 2012-03-27 2012-03-27 銀系円筒ターゲット及びその製造方法
PCT/JP2012/079485 WO2013145424A1 (ja) 2012-03-27 2012-11-14 銀系円筒ターゲット及びその製造方法

Publications (2)

Publication Number Publication Date
CN104246002A CN104246002A (zh) 2014-12-24
CN104246002B true CN104246002B (zh) 2015-11-25

Family

ID=49258759

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280071819.6A Expired - Fee Related CN104246002B (zh) 2012-03-27 2012-11-14 银系圆筒靶材及其制造方法

Country Status (8)

Country Link
US (1) US20150041313A1 (enExample)
EP (1) EP2832895B1 (enExample)
JP (1) JP5472353B2 (enExample)
KR (3) KR20160022934A (enExample)
CN (1) CN104246002B (enExample)
SG (1) SG11201406054TA (enExample)
TW (1) TWI457450B (enExample)
WO (1) WO2013145424A1 (enExample)

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JP5159962B1 (ja) * 2012-01-10 2013-03-13 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
DE102012006718B3 (de) 2012-04-04 2013-07-18 Heraeus Materials Technology Gmbh & Co. Kg Planares oder rohrförmiges Sputtertarget sowie Verfahren zur Herstellung desselben
JP6198177B2 (ja) * 2013-07-19 2017-09-20 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット
DE102014214683A1 (de) * 2014-07-25 2016-01-28 Heraeus Deutschland GmbH & Co. KG Sputtertarget auf der Basis einer Silberlegierung
JP6350223B2 (ja) * 2014-11-04 2018-07-04 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット
JP5975186B1 (ja) * 2015-02-27 2016-08-23 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット及びＡｇ合金膜の製造方法
JP6259847B2 (ja) 2016-02-05 2018-01-10 住友化学株式会社 円筒型ターゲットの製造方法
US20190389772A1 (en) * 2016-03-14 2019-12-26 Jx Nippon Mining & Metals Corporation Oxide sintered body
CN109196137B (zh) 2016-06-02 2021-11-30 田中贵金属工业株式会社 金溅射靶
JP6877179B2 (ja) * 2017-02-23 2021-05-26 Ｎｊｔ銅管株式会社 円筒型スパッタリングターゲット材及びその製造方法
TWI809013B (zh) 2017-12-06 2023-07-21 日商田中貴金屬工業股份有限公司 金濺鍍靶材的製造方法及金膜的製造方法
JP7274816B2 (ja) 2017-12-06 2023-05-17 田中貴金属工業株式会社 金スパッタリングターゲットとその製造方法
JP2019131850A (ja) * 2018-01-30 2019-08-08 三菱マテリアル株式会社 積層膜、及び、Ａｇ合金スパッタリングターゲット
KR102623865B1 (ko) * 2018-09-26 2024-01-11 제이엑스금속주식회사 스퍼터링 타깃 및 그 제조 방법
CN111215839A (zh) * 2018-11-23 2020-06-02 宁波江丰电子材料股份有限公司 镀膜材料的成型方法
CN109440073A (zh) * 2018-11-29 2019-03-08 信利光电股份有限公司 一种银合金靶材、银合金镀层和电致变色后视镜
JP6853458B2 (ja) * 2019-02-06 2021-03-31 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金膜
JP2020125533A (ja) * 2019-02-06 2020-08-20 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金膜
JP2021075762A (ja) * 2019-11-08 2021-05-20 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金膜
JP7225170B2 (ja) 2020-08-05 2023-02-20 松田産業株式会社 Ａｇ合金円筒形スパッタリングターゲット、スパッタリング装置及び電子デバイスの製造方法
CN113088749A (zh) * 2021-03-11 2021-07-09 先导薄膜材料（广东）有限公司 一种银合金及其制备方法
CN116752104A (zh) * 2023-06-16 2023-09-15 基迈克材料科技（苏州）有限公司 一种半导体用的高纯低氧细晶Ag旋转管靶的制作方法
CN117102272B (zh) * 2023-09-11 2025-02-11 丰联科光电(洛阳)股份有限公司 一种银合金管靶的制造方法
EP4610391A1 (en) * 2024-03-01 2025-09-03 Materion Advanced Materials Germany GmbH Ag alloy sputtering target with low oxygen content

Citations (5)

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CN1545569A (zh) * 2002-06-24 2004-11-10 ��ʽ����ֱ۹����� 银合金溅射靶及其制造方法
CN1550573A (zh) * 2003-05-16 2004-12-01 ��ʽ�������Ƹ��� Ag-Bi基合金溅射靶及其制备方法
CN1823179A (zh) * 2003-07-16 2006-08-23 株式会社神户制钢所 Ag系溅射靶及其制造方法
CN101283113A (zh) * 2005-10-19 2008-10-08 W.C.贺利氏有限公司 多组分合金溅射靶及其制备方法
JP2011100719A (ja) * 2009-10-06 2011-05-19 Mitsubishi Materials Corp 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法

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US20030052000A1 (en) * 1997-07-11 2003-03-20 Vladimir Segal Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method
JP4247863B2 (ja) * 1999-07-12 2009-04-02 ソニー株式会社 電子部品用金属材料、電子部品用配線材料、電子部品用電極材料、電子部品、電子機器、金属材料の加工方法及び電子光学部品
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JP5561846B2 (ja) * 2006-12-13 2014-07-30 株式会社Ｕａｃｊ押出加工 高強度アルミニウム合金材およびその製造方法
JP5533545B2 (ja) 2010-01-12 2014-06-25 三菱マテリアル株式会社 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法
JP5159963B1 (ja) * 2012-01-13 2013-03-13 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
DE102012006718B3 (de) * 2012-04-04 2013-07-18 Heraeus Materials Technology Gmbh & Co. Kg Planares oder rohrförmiges Sputtertarget sowie Verfahren zur Herstellung desselben

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Publication number Priority date Publication date Assignee Title
CN1545569A (zh) * 2002-06-24 2004-11-10 ��ʽ����ֱ۹����� 银合金溅射靶及其制造方法
CN1550573A (zh) * 2003-05-16 2004-12-01 ��ʽ�������Ƹ��� Ag-Bi基合金溅射靶及其制备方法
CN1823179A (zh) * 2003-07-16 2006-08-23 株式会社神户制钢所 Ag系溅射靶及其制造方法
CN101283113A (zh) * 2005-10-19 2008-10-08 W.C.贺利氏有限公司 多组分合金溅射靶及其制备方法
JP2011100719A (ja) * 2009-10-06 2011-05-19 Mitsubishi Materials Corp 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法

Also Published As

Publication number Publication date
EP2832895B1 (en) 2019-08-21
KR20140029549A (ko) 2014-03-10
JP2013204052A (ja) 2013-10-07
TW201339327A (zh) 2013-10-01
EP2832895A4 (en) 2016-04-13
JP5472353B2 (ja) 2014-04-16
KR101467152B1 (ko) 2014-11-28
KR20160022934A (ko) 2016-03-02
WO2013145424A1 (ja) 2013-10-03
US20150041313A1 (en) 2015-02-12
SG11201406054TA (en) 2014-11-27
KR20140130434A (ko) 2014-11-10
CN104246002A (zh) 2014-12-24
TWI457450B (zh) 2014-10-21
EP2832895A1 (en) 2015-02-04

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