CN104137120B - 使用位故障和虚拟检查产生一种晶片检查过程 - Google Patents

使用位故障和虚拟检查产生一种晶片检查过程 Download PDF

Info

Publication number
CN104137120B
CN104137120B CN201380009561.1A CN201380009561A CN104137120B CN 104137120 B CN104137120 B CN 104137120B CN 201380009561 A CN201380009561 A CN 201380009561A CN 104137120 B CN104137120 B CN 104137120B
Authority
CN
China
Prior art keywords
defect
inspection
physical location
wafer
defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380009561.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN104137120A (zh
Inventor
杨宝文
乔治·西蒙
岳宗·杜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Priority to CN201711205806.4A priority Critical patent/CN108062558B/zh
Publication of CN104137120A publication Critical patent/CN104137120A/zh
Application granted granted Critical
Publication of CN104137120B publication Critical patent/CN104137120B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N7/00—Television systems
    • H04N7/18—Closed-circuit television [CCTV] systems, i.e. systems in which the video signal is not broadcast
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
CN201380009561.1A 2012-01-18 2013-01-17 使用位故障和虚拟检查产生一种晶片检查过程 Active CN104137120B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711205806.4A CN108062558B (zh) 2012-01-18 2013-01-17 使用位故障和虚拟检查产生一种晶片检查过程

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261587911P 2012-01-18 2012-01-18
US61/587,911 2012-01-18
US13/743,074 US9277186B2 (en) 2012-01-18 2013-01-16 Generating a wafer inspection process using bit failures and virtual inspection
US13/743,074 2013-01-16
PCT/US2013/021880 WO2013109714A1 (en) 2012-01-18 2013-01-17 Generating a wafer inspection process using bit failures and virtual inspection

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201711205806.4A Division CN108062558B (zh) 2012-01-18 2013-01-17 使用位故障和虚拟检查产生一种晶片检查过程

Publications (2)

Publication Number Publication Date
CN104137120A CN104137120A (zh) 2014-11-05
CN104137120B true CN104137120B (zh) 2018-01-02

Family

ID=48779693

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201380009561.1A Active CN104137120B (zh) 2012-01-18 2013-01-17 使用位故障和虚拟检查产生一种晶片检查过程
CN201711205806.4A Active CN108062558B (zh) 2012-01-18 2013-01-17 使用位故障和虚拟检查产生一种晶片检查过程

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201711205806.4A Active CN108062558B (zh) 2012-01-18 2013-01-17 使用位故障和虚拟检查产生一种晶片检查过程

Country Status (6)

Country Link
US (2) US9277186B2 (enExample)
JP (2) JP6180435B2 (enExample)
KR (2) KR102001356B1 (enExample)
CN (2) CN104137120B (enExample)
TW (1) TWI625803B (enExample)
WO (1) WO2013109714A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108062558A (zh) * 2012-01-18 2018-05-22 科磊股份有限公司 使用位故障和虚拟检查产生一种晶片检查过程

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140245066A1 (en) * 2013-02-27 2014-08-28 Lionel J. Riviere-Cazaux Scan diagnosis analysis using callout clustering
US20140282327A1 (en) * 2013-03-14 2014-09-18 Nvidia Corporation Cutter in diagnosis (cid) a method to improve the throughput of the yield ramp up process
US9338134B2 (en) 2013-03-27 2016-05-10 Fortinet, Inc. Firewall policy management
US9355208B2 (en) * 2013-07-08 2016-05-31 Kla-Tencor Corp. Detecting defects on a wafer
US9470743B2 (en) 2014-03-04 2016-10-18 Nvidia Corporation Dynamic yield prediction
TWI548013B (zh) * 2014-03-04 2016-09-01 旺宏電子股份有限公司 結合實體座標之位元失效偵測方法
US10127653B2 (en) * 2014-07-22 2018-11-13 Kla-Tencor Corp. Determining coordinates for an area of interest on a specimen
US9816939B2 (en) * 2014-07-22 2017-11-14 Kla-Tencor Corp. Virtual inspection systems with multiple modes
US10133263B1 (en) 2014-08-18 2018-11-20 Kla-Tencor Corporation Process condition based dynamic defect inspection
US10267746B2 (en) 2014-10-22 2019-04-23 Kla-Tencor Corp. Automated pattern fidelity measurement plan generation
US9830421B2 (en) * 2014-12-31 2017-11-28 Kla-Tencor Corp. Alignment of inspection to design using built in targets
US10012599B2 (en) * 2015-04-03 2018-07-03 Kla-Tencor Corp. Optical die to database inspection
US10018571B2 (en) * 2015-05-28 2018-07-10 Kla-Tencor Corporation System and method for dynamic care area generation on an inspection tool
US9916965B2 (en) * 2015-12-31 2018-03-13 Kla-Tencor Corp. Hybrid inspectors
US10002447B1 (en) 2016-05-20 2018-06-19 Shanghai United Imaging Healthcare Co., Ltd. System and method for computed tomography
WO2018134287A1 (en) 2017-01-18 2018-07-26 Asml Netherlands B.V. Cascade defect inspection
JP7209513B2 (ja) * 2018-11-21 2023-01-20 三菱電機株式会社 半導体チップの製造方法および半導体ウェハ
JP7404009B2 (ja) * 2019-09-19 2023-12-25 キオクシア株式会社 加工情報管理システム及び加工情報管理方法
KR102459337B1 (ko) * 2020-12-21 2022-10-28 주식회사 에타맥스 실리콘 카바이드 웨이퍼의 결함을 회피하는 다이 구획방법 및 검사장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1845305A (zh) * 2005-04-08 2006-10-11 力晶半导体股份有限公司 晶片缺陷检测方法与系统以及存储媒体
CN101211804A (zh) * 2006-12-28 2008-07-02 中芯国际集成电路制造(上海)有限公司 检测方法及检测系统
US20090080759A1 (en) * 2007-09-20 2009-03-26 Kla-Tencor Corporation Systems and methods for creating persistent data for a wafer and for using persistent data for inspection-related functions
CN102210018A (zh) * 2008-12-05 2011-10-05 恪纳腾公司 用于检测掩模版上的缺陷的方法和系统

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5991699A (en) * 1995-05-04 1999-11-23 Kla Instruments Corporation Detecting groups of defects in semiconductor feature space
JP2986410B2 (ja) * 1995-07-13 1999-12-06 松下電器産業株式会社 半導体ウェハの不良解析方法及びその装置
KR20000007570A (ko) * 1998-07-04 2000-02-07 윤종용 웨이퍼의 칩핑 검사 시스템 및 방법
JP3556509B2 (ja) * 1999-03-16 2004-08-18 株式会社東芝 欠陥解析システムおよびその方法
JP3612247B2 (ja) * 1999-09-14 2005-01-19 株式会社東芝 半導体検査装置及び半導体検査方法
CN100428277C (zh) * 1999-11-29 2008-10-22 奥林巴斯光学工业株式会社 缺陷检查系统
JP2002026102A (ja) * 2000-06-30 2002-01-25 Hitachi Ltd 検査情報処理方法及びその検査システム
US7194709B2 (en) 2004-03-05 2007-03-20 Keith John Brankner Automatic alignment of integrated circuit and design layout of integrated circuit to more accurately assess the impact of anomalies
US7443189B2 (en) * 2005-02-02 2008-10-28 Texas Instruments Incorporated Method to detect and predict metal silicide defects in a microelectronic device during the manufacture of an integrated circuit
EP1891661A1 (en) 2005-06-16 2008-02-27 PDF Solutions, Inc. Test cells for semiconductor yield improvement
US7570796B2 (en) * 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US7676077B2 (en) * 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US8041103B2 (en) * 2005-11-18 2011-10-18 Kla-Tencor Technologies Corp. Methods and systems for determining a position of inspection data in design data space
JP2008041940A (ja) * 2006-08-07 2008-02-21 Hitachi High-Technologies Corp Ｓｅｍ式レビュー装置並びにｓｅｍ式レビュー装置を用いた欠陥のレビュー方法及び欠陥検査方法
KR100939768B1 (ko) * 2006-09-22 2010-01-29 주식회사 하이닉스반도체 웨이퍼의 결함 검출 방법
KR100827440B1 (ko) 2006-09-29 2008-05-06 삼성전자주식회사 반도체 집적 회로 장치의 불량 분석 방법 및 시스템
JP4943304B2 (ja) * 2006-12-05 2012-05-30 株式会社 Ｎｇｒ パターン検査装置および方法
TWI381468B (zh) * 2007-03-30 2013-01-01 Tokyo Electron Ltd 線上微影及蝕刻系統
CN101334414B (zh) * 2007-06-29 2011-11-30 中芯国际集成电路制造(上海)有限公司 用于晶片的缺陷检测机台的匹配方法
CN101785009B (zh) * 2007-08-20 2012-10-10 恪纳腾公司 确定实际缺陷是潜在系统性缺陷还是潜在随机缺陷的计算机实现的方法
JP5081590B2 (ja) * 2007-11-14 2012-11-28 株式会社日立ハイテクノロジーズ 欠陥観察分類方法及びその装置
US9710903B2 (en) * 2008-06-11 2017-07-18 Kla-Tencor Corp. System and method for detecting design and process defects on a wafer using process monitoring features
US8269960B2 (en) * 2008-07-24 2012-09-18 Kla-Tencor Corp. Computer-implemented methods for inspecting and/or classifying a wafer
WO2010014609A2 (en) * 2008-07-28 2010-02-04 Kla-Tencor Corporation Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer
JP5297261B2 (ja) * 2009-04-28 2013-09-25 株式会社日立ハイテクノロジーズ 観察欠陥選択処理方法、欠陥観察方法、観察欠陥選択処理装置、欠陥観察装置
JP5604067B2 (ja) * 2009-07-31 2014-10-08 株式会社日立ハイテクノロジーズ マッチング用テンプレートの作成方法、及びテンプレート作成装置
US9087367B2 (en) * 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US9277186B2 (en) * 2012-01-18 2016-03-01 Kla-Tencor Corp. Generating a wafer inspection process using bit failures and virtual inspection

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1845305A (zh) * 2005-04-08 2006-10-11 力晶半导体股份有限公司 晶片缺陷检测方法与系统以及存储媒体
CN101211804A (zh) * 2006-12-28 2008-07-02 中芯国际集成电路制造(上海)有限公司 检测方法及检测系统
US20090080759A1 (en) * 2007-09-20 2009-03-26 Kla-Tencor Corporation Systems and methods for creating persistent data for a wafer and for using persistent data for inspection-related functions
CN102210018A (zh) * 2008-12-05 2011-10-05 恪纳腾公司 用于检测掩模版上的缺陷的方法和系统

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108062558A (zh) * 2012-01-18 2018-05-22 科磊股份有限公司 使用位故障和虚拟检查产生一种晶片检查过程
CN108062558B (zh) * 2012-01-18 2022-10-11 科磊股份有限公司 使用位故障和虚拟检查产生一种晶片检查过程

Also Published As

Publication number Publication date
JP6180435B2 (ja) 2017-08-16
US10014229B2 (en) 2018-07-03
JP2017216466A (ja) 2017-12-07
KR20140124778A (ko) 2014-10-27
CN104137120A (zh) 2014-11-05
US20130182101A1 (en) 2013-07-18
US20160163606A1 (en) 2016-06-09
US9277186B2 (en) 2016-03-01
KR101886853B1 (ko) 2018-08-09
TWI625803B (zh) 2018-06-01
JP6342046B2 (ja) 2018-06-13
WO2013109714A1 (en) 2013-07-25
TW201344822A (zh) 2013-11-01
CN108062558B (zh) 2022-10-11
KR102001356B1 (ko) 2019-07-17
CN108062558A (zh) 2018-05-22
JP2015509196A (ja) 2015-03-26
KR20180093090A (ko) 2018-08-20

Similar Documents

Publication Publication Date Title
CN104137120B (zh) 使用位故障和虚拟检查产生一种晶片检查过程
JP5619776B2 (ja) ウエハの検査のための１つまたは複数のパラメータの選択方法
TWI701427B (zh) 經組態以偵測一樣品上之缺陷之系統、用於偵測一樣品上之缺陷之方法及其非暫時性電腦可讀媒體
KR102536011B1 (ko) 심층적으로 적층된 층들을 갖는 웨이퍼들에서 결함 분류기를 트레이닝하고 적용하기 위한 시스템, 방법
TWI618161B (zh) 使用設計資料於半導體晶圓上偵測重複缺陷之方法、系統及非暫時性電腦可讀媒體
KR101711193B1 (ko) 웨이퍼 검사 방법 및 웨이퍼 검사 시스템
CN104303264B (zh) 用于半导体装置的自动化检验的配方产生的方法、计算机系统及设备
JP2020118696A (ja) 光学式検査及び光学式レビューからの欠陥属性に基づく電子ビームレビューのための欠陥サンプリング
US10677742B2 (en) Detecting die repeating programmed defects located in backgrounds with non-repeating features
US9689805B2 (en) Systems and methods eliminating false defect detections
JP2017523390A (ja) 検査のための高解像度フルダイイメージデータの使用
CN104718606A (zh) 自动化检验情境产生
US9536299B2 (en) Pattern failure discovery by leveraging nominal characteristics of alternating failure modes
KR20130092559A (ko) 동적 관심 영역들
KR20200127259A (ko) 검사를 위한 모드 선택
KR20170127549A (ko) 공정 윈도우 결정을 위한 적응형 샘플링

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant