CN104081879A - 电子装置及其制造方法 - Google Patents
电子装置及其制造方法 Download PDFInfo
- Publication number
- CN104081879A CN104081879A CN201380005257.XA CN201380005257A CN104081879A CN 104081879 A CN104081879 A CN 104081879A CN 201380005257 A CN201380005257 A CN 201380005257A CN 104081879 A CN104081879 A CN 104081879A
- Authority
- CN
- China
- Prior art keywords
- conductive layer
- organic insulator
- layer
- opening
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 230000002093 peripheral effect Effects 0.000 claims abstract description 58
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000011368 organic material Substances 0.000 claims abstract description 14
- 239000012212 insulator Substances 0.000 claims description 173
- 239000000463 material Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 39
- 238000009434 installation Methods 0.000 claims description 30
- 230000004888 barrier function Effects 0.000 claims description 26
- 229910052721 tungsten Inorganic materials 0.000 claims description 26
- 229910044991 metal oxide Inorganic materials 0.000 claims description 22
- 150000004706 metal oxides Chemical class 0.000 claims description 22
- 150000004767 nitrides Chemical class 0.000 claims description 20
- 229910000838 Al alloy Inorganic materials 0.000 claims description 9
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 383
- 238000005401 electroluminescence Methods 0.000 description 44
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 36
- 229910001930 tungsten oxide Inorganic materials 0.000 description 36
- 238000002161 passivation Methods 0.000 description 32
- 238000004544 sputter deposition Methods 0.000 description 27
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 24
- 239000010937 tungsten Substances 0.000 description 24
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 18
- 239000004020 conductor Substances 0.000 description 17
- 239000010408 film Substances 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 239000011261 inert gas Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000004380 ashing Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000036506 anxiety Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000005596 ionic collisions Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000002927 oxygen compounds Chemical class 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012007797 | 2012-01-18 | ||
JP2012-007797 | 2012-03-14 | ||
PCT/JP2013/000060 WO2013108598A1 (ja) | 2012-01-18 | 2013-01-10 | 電子装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104081879A true CN104081879A (zh) | 2014-10-01 |
CN104081879B CN104081879B (zh) | 2017-03-01 |
Family
ID=48799032
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380005257.XA Active CN104081879B (zh) | 2012-01-18 | 2013-01-10 | 电子装置及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9356252B2 (zh) |
JP (1) | JP6311311B2 (zh) |
CN (1) | CN104081879B (zh) |
WO (1) | WO2013108598A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113013362A (zh) * | 2021-02-26 | 2021-06-22 | 云谷(固安)科技有限公司 | 显示面板、显示面板的制备方法及显示装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6241859B2 (ja) * | 2014-06-19 | 2017-12-06 | 株式会社Joled | アクティブマトリクス型表示パネルの製造方法とアクティブマトリクス型表示パネル |
US10574109B2 (en) * | 2016-04-28 | 2020-02-25 | The Boeing Company | Permanent magnet biased virtual elliptical motor |
US10267383B2 (en) * | 2017-05-03 | 2019-04-23 | The Boeing Company | Self-aligning virtual elliptical drive |
US11410880B2 (en) * | 2019-04-23 | 2022-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Phase control in contact formation |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6709987B2 (en) * | 1998-07-31 | 2004-03-23 | Applied Materials, Inc. | Method and apparatus for forming improved metal interconnects |
CN1575063A (zh) * | 2003-05-28 | 2005-02-02 | 索尼株式会社 | 层叠结构及其制造方法及显示元件和显示单元 |
US20090302751A1 (en) * | 2008-06-06 | 2009-12-10 | Sony Corporation | Organic light emitting device, method of manufacturing the same, display unit, and electronic device |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05315459A (ja) | 1992-05-11 | 1993-11-26 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH05315458A (ja) | 1992-05-11 | 1993-11-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JP4493933B2 (ja) | 2002-05-17 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 表示装置 |
US7256421B2 (en) | 2002-05-17 | 2007-08-14 | Semiconductor Energy Laboratory, Co., Ltd. | Display device having a structure for preventing the deterioration of a light emitting device |
JP2004127933A (ja) * | 2002-09-11 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
US7291970B2 (en) * | 2002-09-11 | 2007-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting apparatus with improved bank structure |
JP4362696B2 (ja) * | 2003-03-26 | 2009-11-11 | ソニー株式会社 | 発光素子およびその製造方法、ならびに表示装置 |
JP4483245B2 (ja) * | 2003-09-19 | 2010-06-16 | ソニー株式会社 | 有機発光素子およびその製造方法ならびに表示装置 |
JP4016144B2 (ja) * | 2003-09-19 | 2007-12-05 | ソニー株式会社 | 有機発光素子およびその製造方法ならびに表示装置 |
JP4501666B2 (ja) * | 2004-12-14 | 2010-07-14 | セイコーエプソン株式会社 | コンタクトの形成方法 |
US8633919B2 (en) * | 2005-04-14 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device, driving method of the display device, and electronic device |
JP2007026754A (ja) * | 2005-07-13 | 2007-02-01 | Matsushita Electric Ind Co Ltd | 有機エレクトロルミネッセンス素子、露光装置および画像形成装置 |
JP2007103098A (ja) | 2005-09-30 | 2007-04-19 | Seiko Epson Corp | 有機el装置の製造方法、有機el装置及び電子機器 |
JP2007227288A (ja) * | 2006-02-27 | 2007-09-06 | Seiko Epson Corp | 有機el装置および電子機器 |
KR100782485B1 (ko) * | 2006-08-18 | 2007-12-05 | 삼성전자주식회사 | 알루미늄 및 구리 배선들을 전기적으로 접속시키는구조체들 및 그의 형성방법들 |
KR101326129B1 (ko) * | 2007-07-24 | 2013-11-06 | 삼성디스플레이 주식회사 | 유기 박막 트랜지스터 표시판 및 그 제조 방법 |
JP5002553B2 (ja) * | 2008-07-30 | 2012-08-15 | 株式会社東芝 | 自発光型素子及びその製造方法 |
US8829526B2 (en) * | 2009-01-23 | 2014-09-09 | Sharp Kabushiki Kaisha | Semiconductor device, method for manufacturing same, and display device |
JP5553518B2 (ja) * | 2009-03-19 | 2014-07-16 | エルジー ディスプレイ カンパニー リミテッド | 画像表示装置 |
JP2010257694A (ja) | 2009-04-23 | 2010-11-11 | Kyocera Corp | 画像表示装置 |
US8872166B2 (en) * | 2009-11-26 | 2014-10-28 | Sharp Kabushiki Kaisha | Organic EL device |
KR101783352B1 (ko) * | 2010-06-17 | 2017-10-10 | 삼성디스플레이 주식회사 | 평판 표시 장치 및 그 제조 방법 |
CN103650150A (zh) | 2012-06-08 | 2014-03-19 | 松下电器产业株式会社 | 薄膜晶体管、显示面板以及薄膜晶体管的制造方法 |
-
2013
- 2013-01-10 CN CN201380005257.XA patent/CN104081879B/zh active Active
- 2013-01-10 JP JP2013554242A patent/JP6311311B2/ja active Active
- 2013-01-10 US US14/371,073 patent/US9356252B2/en active Active
- 2013-01-10 WO PCT/JP2013/000060 patent/WO2013108598A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6709987B2 (en) * | 1998-07-31 | 2004-03-23 | Applied Materials, Inc. | Method and apparatus for forming improved metal interconnects |
CN1575063A (zh) * | 2003-05-28 | 2005-02-02 | 索尼株式会社 | 层叠结构及其制造方法及显示元件和显示单元 |
US20090302751A1 (en) * | 2008-06-06 | 2009-12-10 | Sony Corporation | Organic light emitting device, method of manufacturing the same, display unit, and electronic device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113013362A (zh) * | 2021-02-26 | 2021-06-22 | 云谷(固安)科技有限公司 | 显示面板、显示面板的制备方法及显示装置 |
Also Published As
Publication number | Publication date |
---|---|
CN104081879B (zh) | 2017-03-01 |
JPWO2013108598A1 (ja) | 2015-05-11 |
US20150001517A1 (en) | 2015-01-01 |
WO2013108598A1 (ja) | 2013-07-25 |
JP6311311B2 (ja) | 2018-04-18 |
US9356252B2 (en) | 2016-05-31 |
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ASS | Succession or assignment of patent right |
Owner name: JANPAN ORGANIC RATE DISPLAY CO., LTD. Free format text: FORMER OWNER: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. Effective date: 20150430 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150430 Address after: Tokyo, Japan Applicant after: JOLED Inc. Address before: Osaka Japan Applicant before: Matsushita Electric Industrial Co.,Ltd. |
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Effective date of registration: 20231207 Address after: Tokyo, Japan Patentee after: Japan Display Design and Development Contract Society Address before: Tokyo, Japan Patentee before: JOLED Inc. |