JP2007165318A - 有機電界発光素子、および有機電界発光素子の製造方法 - Google Patents
有機電界発光素子、および有機電界発光素子の製造方法 Download PDFInfo
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- JP2007165318A JP2007165318A JP2006336633A JP2006336633A JP2007165318A JP 2007165318 A JP2007165318 A JP 2007165318A JP 2006336633 A JP2006336633 A JP 2006336633A JP 2006336633 A JP2006336633 A JP 2006336633A JP 2007165318 A JP2007165318 A JP 2007165318A
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- 238000005401 electroluminescence Methods 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229910001512 metal fluoride Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 23
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 238000004381 surface treatment Methods 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 68
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 19
- 229910052731 fluorine Inorganic materials 0.000 description 19
- 239000011737 fluorine Substances 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 15
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 4
- OMIHGPLIXGGMJB-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]hepta-1,3,5-triene Chemical class C1=CC=C2OC2=C1 OMIHGPLIXGGMJB-UHFFFAOYSA-N 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920001568 phenolic resin Polymers 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- 229920006122 polyamide resin Polymers 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 229920000069 polyphenylene sulfide Polymers 0.000 description 4
- 229920006305 unsaturated polyester Polymers 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】基板300と、基板300上に位置しかつ金属を含むアノード380と、アノード380上に位置する金属フッ化膜385と、金属フッ化膜385上に位置しかつ少なくとも有機発光層を含む有機膜層400と、有機膜層400上に位置するカソード410とを含む有機電界発光素子が提供される。
【選択図】図4
Description
図2〜図4は、本発明の第1の実施形態に係る有機電界発光素子を示す断面図である。
次に、本発明の第2の実施形態に係る有機電界発光素子について説明する。図5〜図7は、本発明の第2の実施形態に係る有機電界発光素子を示す断面図である。
310 バッファ層
320 半導体層
330 ゲート絶縁膜
340 ゲート電極
350 層間絶縁膜
351、352 コンタクトホール
361、362 ソースおよびドレイン電極
370 平坦化膜
380 アノード
385 金属フッ化膜
390 画素定義膜
400 有機膜層
410 カソード
Claims (12)
- 基板と;
前記基板上に位置し、かつ金属を含むアノードと;
前記アノード上に位置する金属フッ化膜と;
前記金属フッ化膜上に位置し、かつ少なくとも有機発光層を含む有機膜層と;
前記有機膜層上に位置するカソードと;
を含むことを特徴とする、有機電界発光素子。 - 前記アノードは、ソースおよびドレイン電極のいずれか一方とオーミック接触する補助電極層をさらに含むことを特徴とする、請求項1に記載の有機電界発光素子。
- 前記補助電極層は、ITO、IZOおよびZnOよりなる群から選ばれた1つを使用することを特徴とする、請求項2に記載の有機電界発光素子。
- 前記金属は、Ag、Ag合金、Al、Al合金、Au、Pt、CuまたはSnよりなる群から選ばれた1つを使用することを特徴とする、請求項1に記載の有機電界発光素子。
- 前記アノードは、500〜2000Åの厚さで形成されることを特徴とする、請求項1に記載の有機電界発光素子。
- 前記金属フッ化膜は、1〜1.5nmの厚さで形成されることを特徴とする、請求項1に記載の有機電界発光素子。
- 基板を用意する段階と;
前記基板上にアノードを形成する段階と;
前記アノードを表面処理して、金属フッ化膜を形成する段階と;
前記金属フッ化膜上に、少なくとも有機発光層を含む有機膜層を形成する段階と;
前記有機膜層上にカソードを形成する段階と;
を含むことを特徴とする、有機電界発光素子の製造方法。 - 前記アノードを形成する前に、ソースおよびドレイン電極とオーミック接触する補助電極層を形成する段階をさらに含むことを特徴とする、請求項7に記載の有機電界発光素子の製造方法。
- 前記補助電極層は、ITO、IZOおよびZnOよりなる群から選ばれた1つを使用することを特徴とする、請求項8に記載の有機電界発光素子の製造方法。
- 前記表面処理は、プラズマ法を使用することを特徴とする、請求項7に記載の有機電界発光素子の製造方法。
- 前記プラズマ法は、CF3またはSF6をソースとして使用することを特徴とする、請求項10に記載の有機電界発光素子の製造方法。
- 前記アノードは、Ag、Ag合金、Al、Al合金、Au、Pt、CuまたはSnよりなる群から選ばれた1つを使用することを特徴とする、請求項7に記載の有機電界発光素子の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020050123222A KR100712181B1 (ko) | 2005-12-14 | 2005-12-14 | 유기전계발광소자 및 그 제조방법 |
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JP2007165318A true JP2007165318A (ja) | 2007-06-28 |
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JP2006336633A Pending JP2007165318A (ja) | 2005-12-14 | 2006-12-14 | 有機電界発光素子、および有機電界発光素子の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070262299A1 (ja) |
EP (1) | EP1798784A3 (ja) |
JP (1) | JP2007165318A (ja) |
KR (1) | KR100712181B1 (ja) |
CN (1) | CN100565967C (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101397125B1 (ko) | 2012-09-28 | 2014-05-19 | 엘지디스플레이 주식회사 | 유기전기발광소자용 어레이 기판 및 그의 제조 방법 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101319343B1 (ko) | 2007-10-23 | 2013-10-16 | 엘지디스플레이 주식회사 | 유기전계발광소자 및 그 제조방법 |
KR101308466B1 (ko) | 2007-10-08 | 2013-09-16 | 엘지디스플레이 주식회사 | 유기전계발광소자 및 그 제조방법 |
KR100963076B1 (ko) * | 2008-10-29 | 2010-06-14 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시장치 |
JP6044847B2 (ja) * | 2012-02-03 | 2016-12-14 | ソニー株式会社 | 半導体装置及び電子機器 |
US9698386B2 (en) * | 2012-04-13 | 2017-07-04 | Oti Lumionics Inc. | Functionalization of a substrate |
KR102054850B1 (ko) * | 2013-05-30 | 2019-12-12 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
KR102540372B1 (ko) * | 2015-05-28 | 2023-06-05 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
GB2567897A (en) * | 2017-10-31 | 2019-05-01 | Flexenable Ltd | Source-drain conductors for organic TFTS |
KR20220033650A (ko) * | 2020-09-09 | 2022-03-17 | 삼성디스플레이 주식회사 | 반사 전극 및 이를 포함하는 표시 장치 |
KR20220153174A (ko) * | 2021-05-10 | 2022-11-18 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000150172A (ja) * | 1998-11-12 | 2000-05-30 | Idemitsu Kosan Co Ltd | 有機el表示素子及びその製造方法 |
JP2003077681A (ja) * | 2001-08-31 | 2003-03-14 | Sony Corp | 有機電界発光素子およびその製造方法 |
JP2003123989A (ja) * | 2001-10-12 | 2003-04-25 | Matsushita Electric Works Ltd | 有機エレクトロルミネッセンス素子及びその製造方法 |
JP2005174907A (ja) * | 2003-11-11 | 2005-06-30 | Seiko Epson Corp | 電気光学装置および電子機器 |
JP2005259695A (ja) * | 2004-03-11 | 2005-09-22 | Samsung Sdi Co Ltd | 前面発光構造を有する有機電界発光表示装置及びこれの製造方法 |
JP2005340197A (ja) * | 2004-05-28 | 2005-12-08 | Samsung Sdi Co Ltd | 有機電界発光表示素子及びその製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5965281A (en) * | 1997-02-04 | 1999-10-12 | Uniax Corporation | Electrically active polymer compositions and their use in efficient, low operating voltage, polymer light-emitting diodes with air-stable cathodes |
US6483236B1 (en) * | 2000-05-24 | 2002-11-19 | Eastman Kodak Company | Low-voltage organic light-emitting device |
JP3730573B2 (ja) * | 2002-01-16 | 2006-01-05 | シャープ株式会社 | 露光装置および画像形成装置 |
WO2004015746A2 (en) * | 2002-08-12 | 2004-02-19 | Colorado State University Research Foundation | Low work function metal complexes and uses thereof |
JP3877692B2 (ja) * | 2003-03-28 | 2007-02-07 | 三洋電機株式会社 | 有機エレクトロルミネッセンス素子およびその製造方法 |
US6875320B2 (en) * | 2003-05-05 | 2005-04-05 | Eastman Kodak Company | Highly transparent top electrode for OLED device |
KR20050017169A (ko) * | 2003-08-08 | 2005-02-22 | 삼성에스디아이 주식회사 | 애노드 표면 개질층을 사용하는 유기 전계 발광 소자 |
US7049741B2 (en) * | 2004-01-27 | 2006-05-23 | Eastman Kodak Company | Organic light emitting diode with improved light emission through substrate |
US20050186444A1 (en) * | 2004-02-25 | 2005-08-25 | Eastman Kodak Company | Electroluminescent devices having conjugated arylamine polymers |
US7582365B2 (en) * | 2005-01-10 | 2009-09-01 | Universal Display Corporation | Reversibly reducible metal complexes as electron transporting materials for OLEDs |
KR101080354B1 (ko) * | 2004-08-12 | 2011-11-04 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그의 제조 방법 |
US7402947B2 (en) * | 2004-09-08 | 2008-07-22 | The Hong Kong University Of Science And Technology | Anode for organic light emitting diode |
TWI299355B (en) * | 2005-01-20 | 2008-08-01 | Au Optronics Corp | Organic light emitting diode and display including the same |
TWI245587B (en) * | 2005-02-17 | 2005-12-11 | Au Optronics Corp | Organic electro luminescence devices, flat panel displays, and portable electronics using the same |
-
2005
- 2005-12-14 KR KR1020050123222A patent/KR100712181B1/ko active IP Right Grant
-
2006
- 2006-12-14 EP EP06256370A patent/EP1798784A3/en not_active Withdrawn
- 2006-12-14 US US11/638,695 patent/US20070262299A1/en not_active Abandoned
- 2006-12-14 CN CNB2006101667770A patent/CN100565967C/zh active Active
- 2006-12-14 JP JP2006336633A patent/JP2007165318A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000150172A (ja) * | 1998-11-12 | 2000-05-30 | Idemitsu Kosan Co Ltd | 有機el表示素子及びその製造方法 |
JP2003077681A (ja) * | 2001-08-31 | 2003-03-14 | Sony Corp | 有機電界発光素子およびその製造方法 |
JP2003123989A (ja) * | 2001-10-12 | 2003-04-25 | Matsushita Electric Works Ltd | 有機エレクトロルミネッセンス素子及びその製造方法 |
JP2005174907A (ja) * | 2003-11-11 | 2005-06-30 | Seiko Epson Corp | 電気光学装置および電子機器 |
JP2005259695A (ja) * | 2004-03-11 | 2005-09-22 | Samsung Sdi Co Ltd | 前面発光構造を有する有機電界発光表示装置及びこれの製造方法 |
JP2005340197A (ja) * | 2004-05-28 | 2005-12-08 | Samsung Sdi Co Ltd | 有機電界発光表示素子及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101397125B1 (ko) | 2012-09-28 | 2014-05-19 | 엘지디스플레이 주식회사 | 유기전기발광소자용 어레이 기판 및 그의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
EP1798784A2 (en) | 2007-06-20 |
US20070262299A1 (en) | 2007-11-15 |
CN100565967C (zh) | 2009-12-02 |
CN1983666A (zh) | 2007-06-20 |
KR100712181B1 (ko) | 2007-04-27 |
EP1798784A3 (en) | 2011-07-06 |
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