JP2007536697A - フレキシブルエレクトロルミネッセンスデバイス - Google Patents
フレキシブルエレクトロルミネッセンスデバイス Download PDFInfo
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- JP2007536697A JP2007536697A JP2005512830A JP2005512830A JP2007536697A JP 2007536697 A JP2007536697 A JP 2007536697A JP 2005512830 A JP2005512830 A JP 2005512830A JP 2005512830 A JP2005512830 A JP 2005512830A JP 2007536697 A JP2007536697 A JP 2007536697A
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- 238000005401 electroluminescence Methods 0.000 title claims description 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229920003023 plastic Polymers 0.000 claims abstract description 23
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- 238000002347 injection Methods 0.000 claims description 29
- 239000007924 injection Substances 0.000 claims description 29
- 239000011368 organic material Substances 0.000 claims description 14
- 239000002800 charge carrier Substances 0.000 claims description 10
- 239000011147 inorganic material Substances 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 230000005525 hole transport Effects 0.000 claims description 7
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 claims description 7
- 229910010272 inorganic material Inorganic materials 0.000 claims description 6
- 239000011575 calcium Substances 0.000 claims description 5
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910020923 Sn-O Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- MBPCKEZNJVJYTC-UHFFFAOYSA-N 4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 MBPCKEZNJVJYTC-UHFFFAOYSA-N 0.000 claims description 2
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 150000002910 rare earth metals Chemical class 0.000 claims description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 2
- 229910000831 Steel Inorganic materials 0.000 claims 2
- 239000010959 steel Substances 0.000 claims 2
- 230000004888 barrier function Effects 0.000 abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 74
- 239000000463 material Substances 0.000 description 14
- 230000006870 function Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 6
- 239000005020 polyethylene terephthalate Substances 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
- H05B33/24—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers of metallic reflective layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8423—Metallic sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
【選択図】 図1
Description
Claims (28)
- フレキシブル基板と、
前記フレキシブル基板上に設けられた下部電極層と、
少なくとも半透明である上部電極層と、
前記下部電極層と前記上部電極層との間に設けられ、前記下部電極層と前記上部電極層の間に電圧が印加されると電界発光を起こすことができる有機領域とを備え、
前記フレキシブル基板が、(i)金属層に積層または金属層で被覆されたプラスチック層、(ii)2層のプラスチック層に挟まれた金属層、(iii)金属箔、のいずれか1つで構成されること特徴とするフレキシブル有機発光デバイス。 - 前記フレキシブル基板が、アルミニウム層に積層またはアルミニウム層で被覆されたプラスチック層で構成され、前記プラスチック層は、前記下部電極層と前記アルミニウム層の間に配置されている請求項1に記載のフレキシブル有機発光デバイス。
- 前記フレキシブル基板が、鋼箔で構成される請求項1に記載のフレキシブル有機発光デバイス。
- 前記フレキシブル基板と前記下部電極層との間に絶縁層をさらに備えた請求項1に記載のフレキシブル有機発光デバイス。
- 前記絶縁層が、スピンコートにより形成されたポリマー層、または誘電体層である請求項4に記載のフレキシブル有機発光デバイス。
- 前記鋼箔と前記下部電極層との間に絶縁層をさらに備えた請求項3に記載のフレキシブル有機発光デバイス。
- 前記上部電極層が、透明である請求項1に記載のフレキシブル有機発光デバイス。
- 前記上部電極層が、半透明または透明なアノードである請求項1に記載のフレキシブル有機発光デバイス。
- 前記上部電極層が、半透明または透明なカソードである請求項1に記載のフレキシブル有機発光デバイス。
- 前記上部電極層が、半透明または透明な導電フィルムを少なくとも1つ含む多層構造体である請求項1に記載のフレキシブル有機発光デバイス。
- 前記多層構造体が、屈折率整合層および電荷キャリア注入層を含む請求項10に記載のフレキシブル有機発光デバイス。
- 前記屈折率整合層が、光出力の向上に有効な屈折率を有する有機または無機材料を含む請求項11に記載のフレキシブル有機発光デバイス。
- 前記屈折率整合層が、光出力の向上に有効な有機および無機材料の組み合わせを含む請求項11に記載のフレキシブル有機発光デバイス。
- 前記多層構造体がアノードであり、前記電荷キャリア注入層が正孔注入層である請求項11に記載のフレキシブル有機発光デバイス。
- 前記正孔注入層が、仕事関数の高い金属、または透明導電性酸化物(TCO)を含む請求項14に記載のフレキシブル有機発光デバイス。
- 前記仕事関数の高い金属が、金または銀である請求項15に記載のフレキシブル有機発光デバイス。
- 前記TCOが、金属酸化物である請求項15に記載のフレキシブル有機発光デバイス。
- 前記TCOが、酸化インジウム錫(ITO)、酸化亜鉛インジウム、アルミニウムドープ酸化亜鉛、Ga−In−Sn−O、SnO2、Zn−In−Sn−O、およびGa−In−Oからなる群から選択される請求項15に記載のフレキシブル有機発光デバイス。
- 前記正孔注入層が、正孔注入に有効な有機材料または正孔注入に有効な無機および有機材料の組み合わせを含む請求項14に記載のフレキシブル有機発光デバイス。
- 前記正孔注入層が、正孔注入に有効な無機材料または正孔注入に有効な無機および有機材料の組み合わせを含む請求項14に記載のフレキシブル有機発光デバイス。
- 前記多層構造体がカソードであり、前記電荷キャリア注入層が電子注入層である請求項11に記載のフレキシブル有機発光デバイス。
- 前記電子注入層が、仕事関数の低い金属を含む請求項21に記載のフレキシブル有機発光デバイス。
- 前記仕事関数の低い金属が、希土類金属である請求項22に記載のフレキシブル有機発光デバイス。
- 前記屈折率整合層が、トリス(8−ヒドロキシキノリン)アルミニウム(Alq3)またはN,N’−ジ(ナフタレン−1−イル)−N,N’−ジフェニルベンジジン(NPB)を含む請求項21に記載のフレキシブル有機発光デバイス。
- 前記カソードが銀層を備え、前記電子注入層がリチウムフッ化物からなる副層上に形成されたカルシウムからなる副層で構成され、前記銀層が前記カルシウム層上に形成されている請求項21に記載のフレキシブル有機発光デバイス。
- 前記下部電極層および前記上部電極層の少なくとも一方が、電荷キャリア注入を強化するために改質されている請求項1に記載のフレキシブル有機発光デバイス。
- 前記有機領域が、(i)正孔輸送層と、(ii)放出層または電子輸送層とを含む請求項1に記載のフレキシブル有機発光デバイス。
- 前記有機領域が、(i)正孔輸送層と、(ii)放出層と、(iii)電子輸送層とを含む請求項1に記載のフレキシブル有機発光デバイス。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/SG2003/000296 WO2005064993A1 (en) | 2003-12-30 | 2003-12-30 | Flexible electroluminescent devices |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007536697A true JP2007536697A (ja) | 2007-12-13 |
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ID=34738123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005512830A Pending JP2007536697A (ja) | 2003-12-30 | 2003-12-30 | フレキシブルエレクトロルミネッセンスデバイス |
Country Status (7)
Country | Link |
---|---|
US (1) | US20070222370A1 (ja) |
EP (1) | EP1712109A4 (ja) |
JP (1) | JP2007536697A (ja) |
CN (1) | CN1895003A (ja) |
AU (1) | AU2003288884A1 (ja) |
TW (1) | TW200522786A (ja) |
WO (1) | WO2005064993A1 (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009520321A (ja) * | 2005-12-14 | 2009-05-21 | ゼネラル・エレクトリック・カンパニイ | 電気活性デバイス用積層電極及びその製造方法 |
JP2009176730A (ja) * | 2007-12-28 | 2009-08-06 | Sumitomo Chemical Co Ltd | 高分子発光素子、製造方法及び高分子発光ディスプレイ装置 |
KR101063361B1 (ko) | 2010-05-06 | 2011-09-07 | 포항공과대학교 산학협력단 | 플렉서블 전자소자의 제조방법, 플렉서블 전자소자 및 플렉서블 기판 |
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Also Published As
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AU2003288884A1 (en) | 2005-07-21 |
CN1895003A (zh) | 2007-01-10 |
US20070222370A1 (en) | 2007-09-27 |
WO2005064993A1 (en) | 2005-07-14 |
TW200522786A (en) | 2005-07-01 |
EP1712109A1 (en) | 2006-10-18 |
EP1712109A4 (en) | 2008-03-19 |
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