CN104067344A - 多位磁性穿隧接面存储器和形成其的方法 - Google Patents

多位磁性穿隧接面存储器和形成其的方法 Download PDF

Info

Publication number
CN104067344A
CN104067344A CN201380006133.3A CN201380006133A CN104067344A CN 104067344 A CN104067344 A CN 104067344A CN 201380006133 A CN201380006133 A CN 201380006133A CN 104067344 A CN104067344 A CN 104067344A
Authority
CN
China
Prior art keywords
layer
magnetic
islands
stt
magnetic layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201380006133.3A
Other languages
English (en)
Chinese (zh)
Inventor
文清·吴
李渖
朱晓春
拉古·萨加尔·玛达拉
升·H·康
肯德里克·H·元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN104067344A publication Critical patent/CN104067344A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
CN201380006133.3A 2012-01-23 2013-01-23 多位磁性穿隧接面存储器和形成其的方法 Pending CN104067344A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/356,530 US20130187247A1 (en) 2012-01-23 2012-01-23 Multi-bit magnetic tunnel junction memory and method of forming same
US13/356,530 2012-01-23
PCT/US2013/022789 WO2013112615A1 (en) 2012-01-23 2013-01-23 Multi-bit magnetic tunnel junction memory and method of forming same

Publications (1)

Publication Number Publication Date
CN104067344A true CN104067344A (zh) 2014-09-24

Family

ID=47750028

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380006133.3A Pending CN104067344A (zh) 2012-01-23 2013-01-23 多位磁性穿隧接面存储器和形成其的方法

Country Status (7)

Country Link
US (1) US20130187247A1 (enExample)
EP (1) EP2807648B1 (enExample)
JP (1) JP2015505643A (enExample)
KR (1) KR20140120920A (enExample)
CN (1) CN104067344A (enExample)
TW (1) TWI524340B (enExample)
WO (1) WO2013112615A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113169269A (zh) * 2018-11-19 2021-07-23 应用材料公司 用于形成用于mram应用的结构的方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8625337B2 (en) 2010-05-06 2014-01-07 Qualcomm Incorporated Method and apparatus of probabilistic programming multi-level memory in cluster states of bi-stable elements
US8711612B1 (en) * 2010-12-03 2014-04-29 Magsil Corporation Memory circuit and method of forming the same using reduced mask steps
US9064589B2 (en) * 2011-11-09 2015-06-23 Qualcomm Incorporated Three port MTJ structure and integration
US10096767B2 (en) * 2013-03-09 2018-10-09 Taiwan Semiconductor Manufacturing Company, Ltd. Elongated magnetoresistive tunnel junction structure
US9240547B2 (en) 2013-09-10 2016-01-19 Micron Technology, Inc. Magnetic tunnel junctions and methods of forming magnetic tunnel junctions
JP6484940B2 (ja) * 2014-07-15 2019-03-20 株式会社リコー 磁気抵抗素子、磁気センサ及び電流センサ
US9502642B2 (en) 2015-04-10 2016-11-22 Micron Technology, Inc. Magnetic tunnel junctions, methods used while forming magnetic tunnel junctions, and methods of forming magnetic tunnel junctions
US9960346B2 (en) 2015-05-07 2018-05-01 Micron Technology, Inc. Magnetic tunnel junctions
US9680089B1 (en) 2016-05-13 2017-06-13 Micron Technology, Inc. Magnetic tunnel junctions
US9979401B2 (en) * 2016-07-19 2018-05-22 Georgia Tech Research Corporation Magnetoelectric computational devices
CN108666339B (zh) * 2017-03-28 2020-11-13 中芯国际集成电路制造(上海)有限公司 磁性随机存储器及其存储单元的制造方法
WO2019005076A1 (en) * 2017-06-29 2019-01-03 Intel Corporation MAGNETIC JUNCTION DEVICES WITH TUNNEL EFFECT COMPRISING A CARBON-DOPED MAGNET LAYER
EP3506359A1 (en) 2017-12-29 2019-07-03 IMEC vzw Memory device with magnetic tunnel junctions and method for manufacturing thereof
US11711995B2 (en) 2020-10-09 2023-08-01 Deere & Company Machine control using a predictive map
CN118510374A (zh) * 2023-02-14 2024-08-16 中国科学院物理研究所 磁子结、磁子随机存储器、微波振荡和探测器、电子设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080145951A1 (en) * 2006-12-19 2008-06-19 Liesl Folks High density spin torque three dimensional (3D) memory arrays addressed with microwave current
CN101960630A (zh) * 2008-03-04 2011-01-26 高通股份有限公司 形成磁隧道结结构的方法
US7893511B2 (en) * 2008-07-17 2011-02-22 Qimonda Ag Integrated circuit, memory module, and method of manufacturing an integrated circuit
CN102017128A (zh) * 2008-03-25 2011-04-13 高通股份有限公司 包括多个垂直磁畴的磁性隧道结单元

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4389423B2 (ja) * 2001-12-21 2009-12-24 ソニー株式会社 磁気抵抗効果素子およびその製造方法並びに磁気メモリ装置
JP2006196613A (ja) * 2005-01-12 2006-07-27 Sony Corp 記憶素子及びその製造方法、メモリ
JP4693450B2 (ja) * 2005-03-22 2011-06-01 株式会社東芝 磁気抵抗効果素子および磁気メモリ
JP4504273B2 (ja) * 2005-07-06 2010-07-14 株式会社東芝 磁気抵抗効果素子および磁気メモリ
JP2007027575A (ja) * 2005-07-20 2007-02-01 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2007266498A (ja) * 2006-03-29 2007-10-11 Toshiba Corp 磁気記録素子及び磁気メモリ
US8593862B2 (en) * 2007-02-12 2013-11-26 Avalanche Technology, Inc. Spin-transfer torque magnetic random access memory having magnetic tunnel junction with perpendicular magnetic anisotropy
US8295082B2 (en) * 2008-08-15 2012-10-23 Qualcomm Incorporated Gate level reconfigurable magnetic logic
US8422285B2 (en) * 2009-10-30 2013-04-16 Grandis, Inc. Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
JP5087067B2 (ja) * 2009-12-03 2012-11-28 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US8625337B2 (en) * 2010-05-06 2014-01-07 Qualcomm Incorporated Method and apparatus of probabilistic programming multi-level memory in cluster states of bi-stable elements
US8878318B2 (en) * 2011-09-24 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a MRAM device with an oxygen absorbing cap layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080145951A1 (en) * 2006-12-19 2008-06-19 Liesl Folks High density spin torque three dimensional (3D) memory arrays addressed with microwave current
CN101960630A (zh) * 2008-03-04 2011-01-26 高通股份有限公司 形成磁隧道结结构的方法
CN102017128A (zh) * 2008-03-25 2011-04-13 高通股份有限公司 包括多个垂直磁畴的磁性隧道结单元
US7893511B2 (en) * 2008-07-17 2011-02-22 Qimonda Ag Integrated circuit, memory module, and method of manufacturing an integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113169269A (zh) * 2018-11-19 2021-07-23 应用材料公司 用于形成用于mram应用的结构的方法

Also Published As

Publication number Publication date
EP2807648B1 (en) 2016-04-06
TW201346898A (zh) 2013-11-16
KR20140120920A (ko) 2014-10-14
WO2013112615A1 (en) 2013-08-01
US20130187247A1 (en) 2013-07-25
EP2807648A1 (en) 2014-12-03
TWI524340B (zh) 2016-03-01
JP2015505643A (ja) 2015-02-23

Similar Documents

Publication Publication Date Title
CN104067344A (zh) 多位磁性穿隧接面存储器和形成其的方法
CN105917411B (zh) 用于高密度低功率gshe-stt mram的多电平单元设计
JP5437355B2 (ja) マルチレベルセル（ｍｌｃ）磁気メモリセルを有する装置およびマルチレベルセル磁気メモリにデータを記憶させる方法
EP2308050B1 (en) Write operation for spin transfer torque magnetoresistive random access memory with reduced bit cell size
US9064590B2 (en) Driving method of semiconductor storage device and semiconductor storage device
JP3831353B2 (ja) 磁気ランダムアクセスメモリ
CN102870161B (zh) 用于磁性位单元元件的不对称写入方案
US20110267874A1 (en) Invalid Write Prevention for STT-MRAM Array
JP2004005965A (ja) 小面積の磁気メモリデバイス
CN103280235A (zh) 具有单独读取和写入路径的磁性隧道结装置
TWI592928B (zh) 磁場輔助之記憶體操作技術
KR20130137531A (ko) 자기 터널링 접합 시드, 캡핑 및 스페이서 막 물질들
CN1856836B (zh) 具有分段磁性写入线的mram阵列
CN103858169A (zh) 具有单个磁隧道结叠层的多位自旋动量转移磁阻随机存取存储器
US9111855B2 (en) Shift register memory and driving method thereof
CN113450850A (zh) 磁性存储单元、数据写入方法、存储器及设备
CN113744779A (zh) 一种磁阻存储器单元、写控制方法及存算模块
JP5439567B1 (ja) 半導体装置
CN107004437B (zh) 共享位线mram的系统和方法
US20190221608A1 (en) Method for manufacturing a magnetic tunnel junction device and device manufactured using such method
US20050128801A1 (en) Magnetic random access memory device and a method of switching a magnetic orientation of memory elements therein
JP5140859B2 (ja) 半導体装置
WO2023279352A1 (zh) 磁性随机存储器及其数据写入和数据读取方法、电子设备
JP2005072605A (ja) 磁気メモリ内の導体を結合する方法および装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20140924