CN103872120A - 半导体装置和制造半导体装置的方法 - Google Patents

半导体装置和制造半导体装置的方法 Download PDF

Info

Publication number
CN103872120A
CN103872120A CN201310571587.7A CN201310571587A CN103872120A CN 103872120 A CN103872120 A CN 103872120A CN 201310571587 A CN201310571587 A CN 201310571587A CN 103872120 A CN103872120 A CN 103872120A
Authority
CN
China
Prior art keywords
layer
resistance
insulating film
gate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310571587.7A
Other languages
English (en)
Chinese (zh)
Inventor
谷口理
竹内克彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN103872120A publication Critical patent/CN103872120A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
CN201310571587.7A 2012-12-07 2013-11-13 半导体装置和制造半导体装置的方法 Pending CN103872120A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-268315 2012-12-07
JP2012268315A JP6056435B2 (ja) 2012-12-07 2012-12-07 半導体装置

Publications (1)

Publication Number Publication Date
CN103872120A true CN103872120A (zh) 2014-06-18

Family

ID=50880019

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310571587.7A Pending CN103872120A (zh) 2012-12-07 2013-11-13 半导体装置和制造半导体装置的方法

Country Status (4)

Country Link
US (1) US9082749B2 (https=)
JP (1) JP6056435B2 (https=)
CN (1) CN103872120A (https=)
TW (1) TWI605589B (https=)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104037217A (zh) * 2014-07-02 2014-09-10 西安电子科技大学 一种基于复合偶极层的AlGaN/GaN HEMT开关器件结构及制作方法
CN104037220A (zh) * 2014-07-02 2014-09-10 西安电子科技大学 一种基于偶级子层浮栅结构的增强型AlGaNGaNMISHEMT器件结构及其制作方法
CN104037215A (zh) * 2014-07-02 2014-09-10 西安电子科技大学 一种基于聚合物的增强型AlGaN/GaN MISHEMT器件结构及制作方法
CN104037221A (zh) * 2014-07-02 2014-09-10 西安电子科技大学 一种基于极化效应的复合场板高性能AlGaN/GaN HEMT器件结构及制作方法
CN104037219A (zh) * 2014-07-02 2014-09-10 西安电子科技大学 一种基于栅结构的增强型AlGaN/GaN HEMT器件结构及其制作方法
CN104064595A (zh) * 2014-07-02 2014-09-24 西安电子科技大学 一种基于槽栅结构的增强型AlGaN/GaN MISHEMT器件结构及其制作方法
CN104576757A (zh) * 2014-12-31 2015-04-29 深圳市华星光电技术有限公司 侧栅极tft开关及液晶显示装置
CN104037216B (zh) * 2014-07-02 2016-11-16 西安电子科技大学 一种基于偶极层的高压AlGaN/GaN MISHEMT器件结构及其制作方法
CN106298907A (zh) * 2015-06-26 2017-01-04 丰田自动车株式会社 氮化物半导体装置
CN107078062A (zh) * 2014-11-04 2017-08-18 索尼公司 半导体器件、天线开关电路和无线通信装置
CN109979999A (zh) * 2017-12-28 2019-07-05 新唐科技股份有限公司 增强型高电子迁移率晶体管元件
CN115377182A (zh) * 2021-05-18 2022-11-22 三星电子株式会社 高电子迁移率晶体管
CN113594232B (zh) * 2021-08-09 2024-12-10 迪优未来科技(清远)有限公司 一种多插指埋栅结构的增强型高压hemt器件及其制备方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014183125A (ja) * 2013-03-18 2014-09-29 Fujitsu Ltd 半導体装置
US10867792B2 (en) * 2014-02-18 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same
US9640620B2 (en) * 2014-11-03 2017-05-02 Texas Instruments Incorporated High power transistor with oxide gate barriers
JP6287951B2 (ja) * 2015-05-14 2018-03-07 三菱電機株式会社 化合物半導体装置
JP6523885B2 (ja) * 2015-09-11 2019-06-05 株式会社東芝 半導体装置
JP6567468B2 (ja) 2016-06-20 2019-08-28 株式会社東芝 半導体装置、電源回路、及び、コンピュータ
JP6659488B2 (ja) * 2016-07-22 2020-03-04 株式会社東芝 半導体装置、電源回路、コンピュータ、及び半導体装置の製造方法
CN106373991B (zh) * 2016-11-01 2019-10-01 电子科技大学 一种氮面增强型氮化镓基异质结场效应管
TWI613814B (zh) * 2016-11-29 2018-02-01 新唐科技股份有限公司 增強型高電子遷移率電晶體元件
FR3080710B1 (fr) * 2018-04-25 2021-12-24 Commissariat Energie Atomique Transistor hemt et procedes de fabrication favorisant une longueur et des fuites de grille reduites
JP2021111666A (ja) * 2020-01-08 2021-08-02 ソニーセミコンダクタソリューションズ株式会社 化合物半導体装置及び化合物半導体装置の製造方法
WO2022019017A1 (ja) * 2020-07-20 2022-01-27 ソニーセミコンダクタソリューションズ株式会社 半導体装置、半導体モジュール、及び無線通信装置
CN112098790B (zh) * 2020-08-05 2023-04-14 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） 基于mis-hemt的边界陷阱的能量分布测试方法及系统
CN114551590B (zh) 2020-11-26 2025-09-26 联华电子股份有限公司 高电子迁移率晶体管及其制作方法
US11881506B2 (en) 2021-07-27 2024-01-23 Globalfoundries U.S. Inc. Gate structures with air gap isolation features
US12218202B2 (en) * 2021-09-16 2025-02-04 Wolfspeed, Inc. Semiconductor device incorporating a substrate recess
CN114373804A (zh) * 2021-12-14 2022-04-19 华为技术有限公司 赝配高迁移率晶体管、低噪声放大器及相关装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11150264A (ja) 1997-09-12 1999-06-02 Sony Corp 半導体装置およびその製造方法ならびに無線通信装置
US6365925B2 (en) 1997-09-12 2002-04-02 Sony Corporation Semiconductor device
JP3189779B2 (ja) * 1998-03-20 2001-07-16 日本電気株式会社 半導体装置の製造方法
JP2004273486A (ja) * 2003-03-05 2004-09-30 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP5384029B2 (ja) 2007-08-23 2014-01-08 日本碍子株式会社 Ｍｉｓゲート構造型のｈｅｍｔ素子およびｍｉｓゲート構造型のｈｅｍｔ素子の作製方法
JP5534661B2 (ja) * 2008-09-11 2014-07-02 株式会社東芝 半導体装置
JP2010186943A (ja) * 2009-02-13 2010-08-26 Sharp Corp 窒化物半導体装置

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104037219B (zh) * 2014-07-02 2017-01-18 西安电子科技大学 一种基于栅结构的增强型AlGaN/GaN HEMT器件结构及其制作方法
CN104037217B (zh) * 2014-07-02 2017-01-25 西安电子科技大学 一种基于复合偶极层的AlGaN/GaN HEMT开关器件结构及制作方法
CN104037215A (zh) * 2014-07-02 2014-09-10 西安电子科技大学 一种基于聚合物的增强型AlGaN/GaN MISHEMT器件结构及制作方法
CN104037221A (zh) * 2014-07-02 2014-09-10 西安电子科技大学 一种基于极化效应的复合场板高性能AlGaN/GaN HEMT器件结构及制作方法
CN104037219A (zh) * 2014-07-02 2014-09-10 西安电子科技大学 一种基于栅结构的增强型AlGaN/GaN HEMT器件结构及其制作方法
CN104064595A (zh) * 2014-07-02 2014-09-24 西安电子科技大学 一种基于槽栅结构的增强型AlGaN/GaN MISHEMT器件结构及其制作方法
CN104037217A (zh) * 2014-07-02 2014-09-10 西安电子科技大学 一种基于复合偶极层的AlGaN/GaN HEMT开关器件结构及制作方法
CN104064595B (zh) * 2014-07-02 2016-11-09 西安电子科技大学 一种基于槽栅结构的增强型AlGaN/GaN MISHEMT器件结构及其制作方法
CN104037216B (zh) * 2014-07-02 2016-11-16 西安电子科技大学 一种基于偶极层的高压AlGaN/GaN MISHEMT器件结构及其制作方法
CN104037220B (zh) * 2014-07-02 2017-01-25 西安电子科技大学 一种基于偶极子层浮栅结构的增强型AlGaN/GaN MISHEMT器件结构及其制作方法
CN104037220A (zh) * 2014-07-02 2014-09-10 西安电子科技大学 一种基于偶级子层浮栅结构的增强型AlGaNGaNMISHEMT器件结构及其制作方法
CN104037215B (zh) * 2014-07-02 2017-01-18 西安电子科技大学 一种基于聚合物的增强型AlGaN/GaN MISHEMT器件结构及其制作方法
CN104037221B (zh) * 2014-07-02 2017-01-25 西安电子科技大学 一种基于极化效应的复合场板高性能AlGaN/GaN HEMT器件结构及制作方法
CN107078062A (zh) * 2014-11-04 2017-08-18 索尼公司 半导体器件、天线开关电路和无线通信装置
CN107078062B (zh) * 2014-11-04 2020-09-18 索尼公司 半导体器件、天线开关电路和无线通信装置
CN104576757B (zh) * 2014-12-31 2017-07-18 深圳市华星光电技术有限公司 侧栅极tft开关及液晶显示装置
CN104576757A (zh) * 2014-12-31 2015-04-29 深圳市华星光电技术有限公司 侧栅极tft开关及液晶显示装置
CN106298907A (zh) * 2015-06-26 2017-01-04 丰田自动车株式会社 氮化物半导体装置
CN106298907B (zh) * 2015-06-26 2019-07-09 丰田自动车株式会社 氮化物半导体装置
CN109979999A (zh) * 2017-12-28 2019-07-05 新唐科技股份有限公司 增强型高电子迁移率晶体管元件
CN115377182A (zh) * 2021-05-18 2022-11-22 三星电子株式会社 高电子迁移率晶体管
CN113594232B (zh) * 2021-08-09 2024-12-10 迪优未来科技(清远)有限公司 一种多插指埋栅结构的增强型高压hemt器件及其制备方法

Also Published As

Publication number Publication date
TW201428964A (zh) 2014-07-16
TWI605589B (zh) 2017-11-11
US9082749B2 (en) 2015-07-14
JP6056435B2 (ja) 2017-01-11
JP2014116401A (ja) 2014-06-26
US20140159117A1 (en) 2014-06-12

Similar Documents

Publication Publication Date Title
JP6056435B2 (ja) 半導体装置
US7956383B2 (en) Field effect transistor
US9214538B2 (en) High performance multigate transistor
EP2840593B1 (en) Enhanced switch device and manufacturing method therefor
CN103026491B (zh) 常关断型三族氮化物金属-二维电子气隧穿结场效应晶体管
TWI512973B (zh) 半導體裝置及半導體裝置之製造方法
US6548333B2 (en) Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
JP5900315B2 (ja) 半導体装置および半導体装置の製造方法
JP5383652B2 (ja) 電界効果トランジスタ及びその製造方法
CN111201609B (zh) 具有可调阈值电压的高电子迁移率晶体管
US9224668B2 (en) Semiconductor HEMT device with stoichiometric silicon nitride layer
US20130032860A1 (en) HFET with low access resistance
JP2001217257A (ja) 半導体装置およびその製造方法
JP2014239201A (ja) 半導体装置、アンテナスイッチ回路、および無線通信装置
CN104037211B (zh) 半导体器件和电子装置
CN107078062A (zh) 半导体器件、天线开关电路和无线通信装置
JP6369605B2 (ja) 半導体装置、アンテナスイッチ回路、および無線通信装置
KR101435479B1 (ko) 반도체 소자 및 그의 제조방법
JP2010267817A (ja) 電界効果トランジスタ

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20140618