CN104037219A - 一种基于栅结构的增强型AlGaN/GaN HEMT器件结构及其制作方法 - Google Patents
一种基于栅结构的增强型AlGaN/GaN HEMT器件结构及其制作方法 Download PDFInfo
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Abstract
本发明公开了一种基于Γ栅结构的增强型AlGaN/GaNHEMT器件结构及其制作方法，从下往上依次包括衬底、GaN缓冲层、AlN隔离层、GaN沟道层、AlGaN本征层、AlGaN掺杂层，所述AlGaN掺杂层上间隔设有源极、有机绝缘层和漏极，所述有机绝缘层上依次设有ITO栅电极，和high-k介质层，所述high-k介质上设有ITO栅电极，上述结构的顶层还间隔淀积有钝化层。本发明在栅上使用了high-K介质，可以降低栅泄漏电流，减少低频噪声；采用浮栅结构俘获电子实现增强型AlGaN/GaNHEMT器件，避免了采用F离子注入引入的晶格损伤以及栅区域干法刻蚀引入的大量界面态。
Description
技术领域
本发明涉及微电子技术领域，尤其是涉及一种基于偶极子层浮栅结构的增强型AlGaN/GaNHEMT器件及其制作方法。
背景技术
GaN是为第三代宽禁带隙半导体，它具有禁带宽度大、击穿电场高、热导率高、饱和电子速度大和异质结界面二维电子气浓度高等特性，使其受到广泛关注。利用GaN材料制成的高迁移率晶体管(HEMT)具有导通电阻低、饱和电流大、击穿电压高等特点，是一种高性能的功率电子器件。
因为较强极化电荷的存在，AlGaN/GaN异质结构中会形成天然的高密度二维电子气，通常制造的AlGaN/GaNHEMT器件都是耗尽型的，增强型AlGaN/GaNHEMT器件则相对困难。十几年来针对GaN基电子器件的研究大部分工作都集中在耗尽型AlGaN/GaNHEMT器件上。但是增强型器件具有许多不可或缺的优势，AlGaN/GaN增强型HEMT器件在微波大功率器件电路中具有很好的电路兼容性；同时，增强型器件的研制使单片集成D-HEMT和E-HEMT互补逻辑电路成为可能。
由于增强型HEMT具有如上的优势，为了形成与耗尽型晶体管互补增强型晶体管，需要采用一些特殊的工艺或者器件结构，比如：槽栅结构HEMT、薄膜势垒、栅下注F–等工艺。但是这些工艺或者结构都存在一定的不足之处，比如栅下注F–器件在高功率工作时，工作温度会较高，F–会在栅下会继续扩散，导致了器件的不稳定性或者器件性能下降等情况。
发明内容
本发明为了克服上述的不足，提供了一种基于偶极子层浮栅结构的增强型AlGaN/GaNHEMT器件结构以及相应的制作方法。
本发明的技术方案如下：
一种基于Γ栅结构的增强型AlGaN/GaNHEMT器件结构，从下往上依次包括衬底、GaN缓冲层、AlN隔离层、GaN沟道层、AlGaN本征层、AlGaN掺杂层，所述AlGaN掺杂层上间隔设有源极、有机绝缘层和漏极，所述有机绝缘层上依次设有ITO栅电极，和high-k介质层，所述high-k介质上设有ITO栅电极，上述结构的顶层还间隔淀积有钝化层。
所述衬底材料为蓝宝石、碳化硅、GaN或MgO。
所述AlGaN掺杂层中Al的组分含量在0～1之间，Ga的组分含量与Al的组分含量之和为1。
所述有机绝缘层为PTFE层。
所述high-k介质为Al2O3和HfO2中的一种。
所述钝化层中包括Si3N4、Al2O3、HfO2和HfSiO中的一种或多种。
上述的一种基于Γ栅结构的增强型AlGaN/GaNHEMT器件结构通过以下方法制作：
(1)对外延生长的AlGaN/GaN材料进行有机清洗，用流动的去离子水清洗并放入HCl:H2O＝1:1的溶液中进行腐蚀30～60s，最后用流动的去离子水清洗并用高纯氮气吹干；
(2)对清洗干净的AlGaN/GaN材料进行光刻和干法刻蚀，形成有源区台面；
(3)对制备好台面的AlGaN/GaN材料进行光刻，形成源漏区，放入电子束蒸发台中淀积欧姆接触金属Ti/Al/Ni/Au＝20/120/45/50nm并进行剥离,最后在氮气环境中进行850℃，35s的快速热退火，形成欧姆接触；
(4)对完成合金的器件进行光刻，形成栅极金属区域，然后放入氧等离子 处理室中对AlGaN表面进行轻度氧化处理，然后放入电子束蒸发台中：反应室真空抽至4.0*10-3帕，缓慢加电压使控制PTFE蒸发速率为0.1nm/s,淀积5～10nm厚的PTFE薄膜，然后再蒸发10nm厚的ITO层，再淀积20～30nm的Al2O3，再蒸发200nm的ITO栅电极；
(5)将淀积好的器件放入丙酮溶液中浸泡30～60min，进行超声剥离，形成浮栅电极结构；
(6)将完成栅极制备的器件放入PECVD反应室淀积SiN钝化膜；
(7)将器件再次进行清洗、光刻显影，形成SiN薄膜的刻蚀区，并放入ICP干法刻蚀反应室中，将源极、漏极上面覆盖的SiN薄膜刻蚀掉；
(8)将器件进行清洗、光刻显影，并放入电子束蒸发台中淀积Ti/Au＝20/200nm的加厚电极，完成整体器件的制备。
所述步骤(6)中的工艺条件为：SiH4的流量为40sccm，NH3的流量为10sccm，反应室压力为1～2Pa,射频功率为40W，淀积200nm～300nm厚的SiN钝化膜。
所述步骤(7)中的工艺条件为：上电极功率为200W，下电极功率为20W，反应室压力为1.5Pa，CF4的流量为20sccm,Ar气的流量为10sccm，刻蚀时间为10min。
本发明的有益效果是：
1.本发明采用PTFE和ITO所产生的偶极子层对沟道2DEG进行部分耗尽，有利于增强型AlGaN/GaNHEMT器件的实现；
2.本发明在栅上使用了high-K介质，可以降低栅泄漏电流，减少低频噪声；
3.本发明采用浮栅结构俘获电子实现增强型AlGaN/GaNHEMT器件，避免了采用F离子注入引入的晶格损伤以及栅区域干法刻蚀引入的大量界面态。
附图说明
本发明将通过例子并参照附图的方式说明，其中：
图1是本发明的示意图；
图2是本发明的制作工艺流程示意图。
具体实施方式
现在结合附图对本发明作进一步详细的说明。这些附图均为简化的示意图，仅以示意方式说明本发明的基本结构，因此其仅显示与本发明有关的构成。
如图1所示，本实施例提供了一种基于Γ栅结构的增强型AlGaN/GaNHEMT器件结构，从下往上依次包括衬底、GaN缓冲层、AlN隔离层、GaN沟道层、AlGaN本征层、AlGaN掺杂层，所述AlGaN掺杂层上间隔设有源极、有机绝缘层和漏极，所述有机绝缘层上依次设有ITO栅电极，和high-k介质层，所述high-k介质上设有ITO栅电极，上述结构的顶层还间隔淀积有钝化层，其中，所述衬底材料为蓝宝石、碳化硅、GaN或MgO，所述AlGaN掺杂层中Al的组分含量在0～1之间，Ga的组分含量与Al的组分含量之和为1，所述有机绝缘层为PTFE层，所述high-k介质为Al2O3和HfO2中的一种，所述钝化层中包括Si3N4、Al2O3、HfO2和HfSiO中的一种或多种。
同时使用PTFE、ITO和Al2O3(high-k)。PTFE层、ITO层和high-k层形成了浮栅结构，该结构实现增强型器件的原理为：一方面在PTFE绝缘介质上淀积ITO金属能够在PTFE表面产生偶极子层：PTFE与ITO一侧会产生正离子，PTFE与AlGaN一侧会产生负离子，从而对正下方的2DEG浓度产生了耗尽作用，导致了2DEG浓度的减小；另一方面在栅极和漏极之间施加较大的反偏电压(例如Vd＝20V，Vg＝阈值电压)，与此同时ITO浮栅能够捕获由于隧穿进入PTFE的电子，在ITO金属层上形成电子聚集，再次对沟道中的2DEG产生耗尽作用；由于两方面耗尽作用的同时存在会使得器件更容易实现增强型工作。
如图2所示，本发明的制作步骤如下：
(1)对外延生长的AlGaN/GaN材料进行有机清洗，用流动的去离子水清洗并放入HCl:H2O＝1:1的溶液中进行腐蚀30～60s，最后用流动的去离子水清 洗并用高纯氮气吹干；
(2)对清洗干净的AlGaN/GaN材料进行光刻和干法刻蚀，形成有源区台面；
(3)对制备好台面的AlGaN/GaN材料进行光刻，形成源漏区，放入电子束蒸发台中淀积欧姆接触金属Ti/Al/Ni/Au＝20/120/45/50nm并进行剥离,最后在氮气环境中进行850℃，35s的快速热退火，形成欧姆接触；
(4)对完成合金的器件进行光刻，形成栅极金属区域，然后放入氧等离子处理室中对AlGaN表面进行轻度氧化处理，然后放入电子束蒸发台中：反应室真空抽至4.0*10-3帕，缓慢加电压使控制PTFE蒸发速率为0.1nm/s,淀积5～10nm厚的PTFE薄膜，然后再蒸发10nm厚的ITO层，再淀积20～30nm的Al2O3，再蒸发200nm的ITO栅电极；
(5)将淀积好的器件放入丙酮溶液中浸泡30～60min，进行超声剥离，形成浮栅电极结构；
(6)将完成栅极制备的器件放入PECVD反应室淀积SiN钝化膜，具体工艺条件为：SiH4的流量为40sccm，NH3的流量为10sccm，反应室压力为1～2Pa,射频功率为40W，淀积200nm～300nm厚的SiN钝化膜。
(7)将器件再次进行清洗、光刻显影，形成SiN薄膜的刻蚀区，并放入ICP干法刻蚀反应室中，工艺条件为：上电极功率为200W，下电极功率为20W，反应室压力为1.5Pa，CF4的流量为20sccm,Ar气的流量为10sccm，刻蚀时间为10min，将源极、漏极上面覆盖的SiN薄膜刻蚀掉；
(8)将器件进行清洗、光刻显影，并放入电子束蒸发台中淀积Ti/Au＝20/200nm的加厚电极，完成整体器件的制备。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。
Claims (9)
1.一种基于Γ栅结构的增强型AlGaN/GaNHEMT器件结构，其特征在于，从下往上依次包括衬底、GaN缓冲层、AlN隔离层、GaN沟道层、AlGaN本征层、AlGaN掺杂层，所述AlGaN掺杂层上间隔设有源极、有机绝缘层和漏极，所述有机绝缘层上依次设有ITO栅电极，和high-k介质层，所述high-k介质上设有ITO栅电极，上述结构的顶层还间隔淀积有钝化层。
2.根据权利要求1所述的基于Γ栅结构的增强型AlGaN/GaNHEMT器件结构，其特征在于，所述衬底材料为蓝宝石、碳化硅、GaN或MgO。
3.根据权利要求1所述的基于Γ栅结构的增强型AlGaN/GaNHEMT器件结构，其特征在于，所述AlGaN掺杂层中Al的组分含量在0～1之间，Ga的组分含量与Al的组分含量之和为1。
4.根据权利要求1所述的基于Γ栅结构的增强型AlGaN/GaNHEMT器件结构，其特征在于，所述有机绝缘层为PTFE层。
5.根据权利要求1所述的基于Γ栅结构的增强型AlGaN/GaNHEMT器件结构，其特征在于，所述high-k介质为Al2O3和HfO2中的一种。
6.根据权利要求1所述的基于Γ栅结构的增强型AlGaN/GaNHEMT器件结构，其特征在于，所述钝化层中包括Si3N4、Al2O3、HfO2和HfSiO中的一种或多种。
7.一种基于Γ栅结构的增强型AlGaN/GaNHEMT器件结构的制作方法，其特征在于，包括如下步骤：
(1)对外延生长的AlGaN/GaN材料进行有机清洗，用流动的去离子水清洗并放入HCl:H2O＝1:1的溶液中进行腐蚀30～60s，最后用流动的去离子水清洗并用高纯氮气吹干；
(2)对清洗干净的AlGaN/GaN材料进行光刻和干法刻蚀，形成有源区台面；
(3)对制备好台面的AlGaN/GaN材料进行光刻，形成源漏区，放入电子束蒸发台中淀积欧姆接触金属Ti/Al/Ni/Au＝20/120/45/50nm并进行剥离,最后在氮气环境中进行850℃，35s的快速热退火，形成欧姆接触；
(4)对完成合金的器件进行光刻，形成栅极金属区域，然后放入氧等离子处理室中对AlGaN表面进行轻度氧化处理，然后放入电子束蒸发台中：反应室真空抽至4.0*10-3帕，缓慢加电压使控制PTFE蒸发速率为0.1nm/s,淀积5～10nm厚的PTFE薄膜，然后再蒸发10nm厚的ITO层，再淀积20～30nm的Al2O3，再蒸发200nm的ITO栅电极；
(5)将淀积好的器件放入丙酮溶液中浸泡30～60min，进行超声剥离，形成浮栅电极结构；
(6)将完成栅极制备的器件放入PECVD反应室淀积SiN钝化膜；
(7)将器件再次进行清洗、光刻显影，形成SiN薄膜的刻蚀区，并放入ICP干法刻蚀反应室中，将源极、漏极上面覆盖的SiN薄膜刻蚀掉；
(8)将器件进行清洗、光刻显影，并放入电子束蒸发台中淀积Ti/Au＝20/200nm的加厚电极，完成整体器件的制备。
8.根据权利要求7所述的一种基于Γ栅结构的增强型AlGaN/GaNHEMT器件结构的制作方法，其特征在于，所述步骤(6)中的工艺条件为：SiH4的流量为40sccm，NH3的流量为10sccm，反应室压力为1～2Pa,射频功率为40W，淀积200nm～300nm厚的SiN钝化膜。
9.根据权利要求6所述的一种基于Γ栅结构的增强型AlGaN/GaNHEMT器件结构的制作方法，其特征在于，所述步骤(7)中的工艺条件为：上电极功率为200W，下电极功率为20W，反应室压力为1.5Pa，CF4的流量为20sccm,Ar气的流量为10sccm，刻蚀时间为10min。
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