CN103871991A - 用于具有中介层的封装件的方法和装置 - Google Patents

用于具有中介层的封装件的方法和装置 Download PDF

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CN103871991A
CN103871991A CN201310088383.8A CN201310088383A CN103871991A CN 103871991 A CN103871991 A CN 103871991A CN 201310088383 A CN201310088383 A CN 201310088383A CN 103871991 A CN103871991 A CN 103871991A
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metal layer
substrate
contact pad
around
connector
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CN103871991B (zh
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吴凯强
陈宪伟
陈玉芬
林俊宏
刘明凯
吕俊麟
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本文公开了一种用于在封装管芯中使用的具有阻拦件的中介层的方法和装置。一种中介层可以包括位于衬底上方的金属层。多个阻拦件可以围绕金属层的每个角部形成在金属层上方。可以在中介衬底的两个面上都形成阻拦件。阻拦件围绕一区域，在该区域中可以设置用于与其他封装件连接的连接件，诸如焊料球。非导电阻拦件可以形成在阻拦件上方。底部填充物可以形成在连接至连接件的封装件下方、金属层上方且包含在角部阻拦件所围绕的区域内，从而使得连接件被底部填充物保护得很好。也可以在印刷电路板上进一步形成这样的阻拦件。

Description

用于具有中介层的封装件的方法和装置
技术领域
本发明涉及用于具有中介层的封装件的方法和装置。
背景技术
自从发明了集成电路(IC)以来，由于各种电子部件(即，晶体管、二极管、电阻器、电容器等)的集成密度的不断提高，半导体产业经历了快速的发展。在大多数情况下，集成密度的这种提高是由于最小部件尺寸的不断缩小，这使得更多的部件被集成到给定的区域中。这些更小的电子部件还需要比过去的封装件利用更少面积的更小封装件。用于半导体器件的一些更小类型的封装件包括方形扁平封装(QFP)、引脚网格阵列(PGA)、球栅阵列(BGA)、倒装芯片(FC)、三维集成电路(3DIC)、晶圆级封装(WLP)以及堆叠式封装(PoP)器件。
可以通过在相互的顶部上方堆叠两个IC管芯来形成3DIC以得到更小尺寸的封装件。一种类型的3DIC是堆叠式封装(PoP)结构，其中连接至各自衬底的多个管芯可以在相互的顶部上堆叠。将第一管芯电连接至第一衬底以形成第一电路。第一电路包括用于连接至第二电路的第一连接点。第二电路包括第二管芯和第二衬底，在第二衬底的每一面上都具有连接点。在第二电路上方堆叠并且电连接第一电路以形成PoP结构。然后可以使用电连接将PoP结构电连接至PCB或类似器件。
使用硅中介衬底(有源或无源)来形成另一种类型的3DIC以提供更精细的管芯至管芯互连，从而提高了性能并且降低了功耗。在这些情况下，电源线和信号线可以经由中介层中的通孔(TV)穿过中介层。例如，一个管芯接合在另一管芯上方，其中使用位于中介层上的接触焊盘将下部管芯连接至中介层。然后可以使用电连接将接触焊盘电连接至印刷电路板(PCB)或类似器件。
在3DIC封装件中，可以在管芯和衬底、中介层或PCB之间使用底部填充材料以加强管芯与衬底、中介层或PCB的连接并且有助于防止热应力破坏管芯和衬底、中介层或PCB之间的连接。然而，由于毛细管作用对四个角部的底部填充物分配的影响，底部填充材料可能不能很好地保护位于封装件的角部的连接件的连接，这可能使得一些连接件未受到底部填充材料的保护。因此，需要有助于在形成半导体封装件的同时用底部填充材料保护位于封装件的四个角部的连接件的方法和装置。
发明内容
为了解决现有技术中存在的问题，根据本发明的一方面，提供了一种器件，包括：衬底，具有第一表面和第二表面；第一金属层，位于所述衬底的第一表面的上方；第一接触焊盘，位于所述第一金属层的上方；以及第一阻拦件，位于所述第一金属层上方，其中所述第一阻拦件围绕所述第一金属层的第一角部周围的第一区域，并且所述第一接触焊盘位于所述第一区域内。
所述的器件进一步包括：第二接触焊盘，位于所述第一金属层上方；以及第二阻拦件，位于所述第一金属层上方，其中所述第二阻拦件围绕所述第一金属层的第二角部周围的第二区域，并且所述第二接触焊盘位于所述第二区域内。
所述的器件进一步包括：第二金属层，位于所述衬底的第二表面上方；第三接触焊盘，位于所述第二金属层上方；以及第三阻拦件，位于所述第二金属层上方，其中所述第三阻拦件围绕所述第二金属层的角部周围的第三区域，并且所述第三接触焊盘位于所述第三区域内。
所述的器件进一步包括：位于所述第一金属层上方围绕所述第一金属层的中心周围的区域的第四阻拦件。
在所述的器件中，所述第一阻拦件包括围绕所述第一角部周围的第一区域的多个不连续的金属部分。
在所述的器件中，所述第一阻拦件包括选自基本上由铝、铜、钛、镍和它们的组合所组成的组中的导电材料。
在所述的器件中，所述第一阻拦件具有高度介于约连接件的直径尺寸至连接件的直径尺寸的约1/10的范围内的矩形。
在所述的器件中，所述第一阻拦件的主体具有基本上不变的厚度。
在所述的器件中，所述第一阻拦件包括导电材料的第一层和非导电材料的第二层，所述非导电材料选自基本上由苯并三唑(BT)、改性硅树脂、甲酚醛环氧树脂(ECN)、改性BT、聚醚砜(PES)、聚碳酸酯、聚砜和它们的组合所组成的组。
所述的器件进一步包括：连接件，位于所述第一接触焊盘的上方；封装件，连接至所述连接件，其中所述封装件包括衬底和连接至所述衬底的管芯；以及底部填充物，位于所述封装件下方、所述第一金属层上方，覆盖所述连接件并且包含在所述第一阻拦件所围绕的第一区域内。
所述的器件进一步包括：印刷电路板(PCB)，其中所述PCB包括位于所述PCB上方围绕所述PCB的角部周围的第四区域的第五阻拦件；连接件，位于所述第三接触焊盘上方，所述连接件将所述衬底连接至所述PCB；以及底部填充物，位于所述PCB上方，覆盖所述连接件，且包含在所述第五阻拦件所围绕的第四区域内。
根据本发明的另一方面，提供了一种形成器件的方法，包括：在衬底的第一表面上方形成第一金属层；在所述第一金属层上方形成第一接触焊盘；以及在所述第一金属层上方形成第一阻拦件，其中所述第一阻拦件围绕所述第一金属层的第一角部周围的第一区域，并且所述第一接触焊盘位于所述第一区域内。
在所述的方法中，形成所述第一阻拦件作为围绕所述第一区域的连续金属部件。
在所述的方法中，所述第一阻拦件是由选自基本上由铝、铜、钛、镍和它们的组合所组成的组中的导电材料形成。
在所述的方法中，同时形成所述第一阻拦件和所述第一接触焊盘。
在所述的方法中，形成所述第一阻拦件包括：形成导电材料的第一层；以及形成非导电材料的第二层，所述非导电材料选自基本上由苯并三唑(BT)、改性硅树脂、甲酚醛环氧树脂(ECN)、改性BT、聚醚砜(PES)、聚碳酸酯、聚砜和它们的组合所组成的组。
所述的方法进一步包括：将第一管芯连接至位于所述第一阻拦件所围绕的第一区域外部的所述金属层上方的接触焊盘；将封装件放置在所述第一管芯上方，其中所述封装件包括衬底和连接至所述衬底的第二管芯；以及将所述封装件连接至放置在所述第一接触焊盘上方的连接件。
根据本发明的又一方面，提供了一种器件，包括：衬底，具有第一表面和第二表面；第一金属层，位于所述衬底的第一表面上方；第一接触焊盘，位于所述第一金属层的上方；第一阻拦件，位于所述第一金属层上方，其中所述第一阻拦件围绕所述第一金属层的第一角部周围的第一区域，并且所述第一接触焊盘位于所述第一区域内；非导电阻拦件，位于所述第一阻拦件上方；连接件，位于所述第一接触焊盘上方；封装件，连接至所述连接件，其中所述封装件包括衬底和连接至所述衬底的管芯；以及底部填充物，位于所述封装件下方、所述第一金属层上方，覆盖所述连接件且包含在所述第一阻拦件所围绕的第一区域内。
在所述的器件中，所述第一阻拦件至所述衬底的边缘的距离是所述衬底的长度的约1/3。
在所述的器件中，所述第一阻拦件具有将所述第一角部与所述第一金属层的另外部分隔开的L形。
附图说明
为更充分地理解本发明及其优点，现将结合附图所作的以下描述作为参考，其中：
图1(a)至图1(d)示出具有围绕中介层的每个角部形成的阻拦件(dam)的中介层和采用该中介层形成的封装件的实施例的截面图；
图2(a)至图2(c)示出在具有围绕中介层的角部的多个阻拦件的中介层上形成的堆叠封装件(PoP)的实施例的俯视图和截面图；
图3(a)至图3(b)示出连接至具有围绕印刷电路板(PCB)的角部的多个阻拦件的PCB的堆叠封装件(PoP)的实施例的俯视图和截面图。
除非另有指明，不同附图中的相应编号和符号通常是指相应的部件。绘制附图用于清晰地示出实施例的相关方面，并且附图不必按比例绘制。
具体实施方式
在下面详细讨论本发明实施例的制造和使用。然而，应该理解，本发明提供了许多可以在各种具体环境中实现的可应用的发明构思。所讨论的具体实施例仅仅是制造和使用本发明的示例性具体方式，而不用于限制本发明的范围。
如将在下文中阐述的，公开了用于具有围绕中介层的角部的阻拦件的中介层的方法和装置。中介层可以包括位于衬底上方的金属层。可以在金属层上方围绕金属层的每个角部形成多个阻拦件。可以在中介衬底的两面上都形成阻拦件。可以在阻拦件上形成非导电阻拦件。阻拦件围绕一区域，在该区域中可以设置连接件(诸如焊料球)来连接至其他封装件。底部填充物可以形成在连接至连接件的封装件下方、金属层的上方且包含在角部阻拦件所围绕的区域内，从而使得连接件被底部填充物保护得很好。还可以在印刷电路板(PCB)上形成这样的阻拦件用于保护位于PCB的角部的连接件。
图1(a)示出中介层100的截面图。中介层100包括衬底101。可以形成穿过衬底101的多个通孔(TV)103。也可以在衬底101内形成多个器件105(有源或者无源)。可以在衬底101的第一面上方形成第一金属层115。可以在第一金属层115的上方形成第一接触焊盘117。可以在衬底101的第二面上方形成第二金属层119和第二接触焊盘121。虽然层115和119被示意性地示出为单个连续层，但是本领域技术人员将认识到，这表示在共用层内作为不同部件形成的各种互连件。在图1(a)中示出位于第一金属层115上方，分别围绕中介层的每个角部周围的区域1121和1122的两个阻拦件1131和1132。示出位于衬底101的第二面上的第二金属层119的上方的另外两个阻拦件1111和1112。接触焊盘117可以分别位于区域1121和1122内。接触焊盘121可以位于通过衬底第二面上的阻拦件1111和1112隔开的多个区域中。可以在第一金属层115的下方形成诸如钝化层或聚合物层的其他层(未示出)。以下的段落中将更加详细地论述这些结构的每一个。
如图1(a)所示，用于中介层100的衬底101可以是例如硅衬底(掺杂或无掺杂的)或者绝缘体上硅(SOI)衬底的有源层，用于为中介层100提供支撑。然而，衬底101可以可选地是玻璃衬底、陶瓷衬底、聚合物衬底或者可以提供合适的保护和/或互连功能的任何其他衬底。这些和任何其他合适的材料可以可选地用于衬底101。
可以在衬底101内形成多个器件105。作为本领域普通技术人员将认识到，诸如晶体管、电容器、电阻器、电感器等各种有源器件和无源器件可以用于生成用于中介层100的设计的期望的结构和功能要求。可以使用任何合适的方法在衬底101内或者在衬底101的表面上形成器件105。
然而，作为本领域普通技术人员将认识到，以上所述的具有器件105的衬底101并不是可以使用的唯一的衬底。可以可选地使用可选衬底，诸如其中不含有器件的封装衬底或者中介层。可以可选地使用这些衬底和任何其他合适的衬底，并且预期这些衬底全都包括在本发明的范围内。
可以在衬底101和器件105上方形成其他金属化层以连接各种器件从而形成功能电路。可以在金属化层上方形成接触焊盘并且接触焊盘与金属化层电接触。而且，可以在衬底101上在金属化层和接触焊盘上方形成钝化层。可以在钝化层上形成其他聚合物层。所有这些金属化层、接触件、钝化层和聚合物层均未在图1(a)中示出。
可以形成穿过衬底101的多个TV103。可以通过涂覆并显影合适的光刻胶，然后蚀刻衬底101以形成TV开口来形成TV103。可以在这个阶段形成用于TV103的开口以使延伸到衬底101中的深度至少大于完成后的中介层100的最终期望高度。因此，虽然深度取决于中介层100的整体设计，但是深度可以介于衬底101上的表面之下约1μm和约700μm之间，其中优选的深度为约50μm。形成的用于TV103的开口可以具有介于约1μm和约100μm之间(诸如约6μm)的直径。
一旦已经形成用于TV103的开口，就可以用例如阻挡层和导电材料来填充用于TV103的开口。阻挡层可以包括诸如氮化钛的导电材料，但是可以可选地使用诸如氮化钽、钛等其他材料。可以使用诸如等离子体增强CVD(PECVD)的化学汽相沉积(CVD)工艺来形成阻挡层。可以形成阻挡层以便勾画出下面的用于TV103的开口的形状的轮廓。
用于TV103的导电材料可以包含铜，但是可以可选地使用其他合适的材料，诸如铝、合金、它们的组合等。可以通过沉积晶种层，然后将铜电镀到晶种层上来形成导电材料，从而填充并过填充用于TV103的开口。一旦用于TV103的开口被填满，就可以通过研磨工艺(诸如化学机械抛光(CMP))去除用于TV103的开口外面的多余阻挡层和多余导电材料，但是也可以使用任何合适的去除工艺。
一旦导电材料在用于TV103的开口内，就可以对衬底101的第二面实施减薄以便暴露出用于TV103的开口并且由延伸穿过衬底101的导电材料形成TV103。在实施例中，减薄衬底101的第二面可以保留TV103。可以通过诸如CMP或蚀刻的平坦化工艺对衬底101的第二面实施减薄。
然而，作为本领域普通技术人员将认识到，以上所述的用于形成TV103的工艺仅是用于形成TV103的一种方法，而且预期其他方法也全都包括在实施例的范围内。例如，还可以使用以下方法：形成用于TV103的开口，填充用于TV103的开口，减薄衬底101的第二面，以及用导体填充用于TV103的开口。用于在衬底101中形成TV103的这种方法和所有其他合适的方法预期全都包括在实施例的范围内。
可选地，可以形成TV103以延伸穿过位于衬底101上方的中介层100的层，诸如第一金属层115(在下面进行进一步描述)。例如，可以在第一金属层115形成之后或者甚至部分地与第一金属层115同时形成TV103。例如，可以在单个加工步骤中形成穿过第一金属层115和衬底101的用于TV103的开口。可选地，当单独地形成每一个第一金属层115时，可以在第一金属层115形成之前在衬底101内形成并且填充用于TV103的开口的一部分，然后可以形成并且填充用于TV103的开口的后续层。这些工艺中的任何工艺以及可以形成TV103的任何其他合适的工艺预期全都包含在本发明实施例的范围内。
可以在衬底101的第一面上方形成第一金属层115以使衬底101的第一面与衬底101的第二面上的外部器件互连。第一金属层115可以是再分配层(RDL)。虽然第一金属层115在图1(a)中被示出为单层互连件，但是第一金属层115可以由导电材料的交替层形成，并且可以通过任何合适的工艺(诸如沉积、镶嵌、双镶嵌等)形成第一金属层115。在实施例中，可以存在一个或多个金属化层，但是第一金属层115内的层的精确数目至少部分取决于中介层100的设计。
可以在第一金属层115上方形成第一接触焊盘117，并且第一接触焊盘117可以与第一金属层115电接触。第一接触焊盘117可以包含诸如铝的导电材料的层，但是可以可选地使用诸如铜、钛或镍的其他材料。可以形成第一接触焊盘117作为凸块下金属(UBM)层。第一接触焊盘117可以包括多个接触焊盘(如图1(a)所示)。一些接触焊盘117可以位于围绕中介层100的一个角部的区域1121内，一些其他接触焊盘117可以位于围绕中介层100的另一角部的区域1122内，而一些其他接触焊盘117可以位于金属层115的中间、区域1121和1122的外部。可以使用以下方法形成第一接触焊盘117：使用诸如溅射的沉积工艺形成材料层(未示出)，然后可以通过合适的工艺(诸如光刻掩蔽和蚀刻)去除部分材料层以形成第一接触焊盘117。然而，可以使用任何其他合适的工艺形成第一接触焊盘117，诸如形成开口，沉积用于第一接触焊盘117的材料，然后平坦化该材料。可以形成厚度介于约0.5μm和约4μm之间(诸如约1.45μm)的第一接触焊盘117。第一接触焊盘117可以包括多个子层(未示出)。
可以在衬底101的第二面上方形成第二金属层119以将衬底101的第二面互连至外部接触件。第二金属层119可以是再分配层(RDL)。虽然第二金属层119在图1(a)中被示出为单层互连件，但是第二金属层119可以由导电材料的交替层形成，并且可以通过任何合适的工艺(诸如沉积、镶嵌、双镶嵌等)来形成第二金属层119。在一个实施例中，可以存在一个或多个金属化层，但是第二金属层119内的层的精确数目至少部分取决于中介层100的设计。
可以在衬底101的第二面上的第二金属层119上方形成第二接触焊盘121并且第二接触焊盘121可以与第二金属层119电接触。第二接触焊盘121可以包含铝，但是可以可选地使用诸如铜的其他材料。可以形成作为凸块下金属(UBM)层的第二接触焊盘121。第二接触焊盘121可以包括多个接触焊盘(如图1(a)所示)。可以使用以下方法形成第二接触焊盘121：使用诸如溅射的沉积工艺以形成材料层(未示出)，然后可以通过合适的工艺(诸如光刻掩蔽和蚀刻)去除部分材料层以形成第二接触焊盘121。然而，可以使用任何其他合适的工艺形成第二接触焊盘121，诸如形成开口，沉积用于第二接触焊盘121的材料，然后平坦化该材料。可以形成厚度介于约0.5μm和约4μm之间(诸如约1.45μm)的第二接触焊盘121。
可以在第一金属层115上方围绕中介层100的角部周围的区域1121形成第一阻拦件1131。可以在第一金属层115上方围绕中介层100的另一角部周围的区域1122形成第二阻拦件1132。阻拦件1131到中介层的边缘的距离可以是约1/3的中介层长度。阻拦件1132到中介层的另一边缘的距离可以是约1/3的中介层长度。阻拦件1131和1132可以具有将角部1121和角部1122与中介层的其余部隔开的L形，如图2(b)的俯视图所示。此外，示出位于衬底101的第二面上方的第二金属层119上方围绕图1(a)所示的中介层的两个角部的另外两个阻拦件1111和1112。中介层100具有四个角部，而图1(a)仅示出位于两个角部上方的阻拦件1131和1132。如图2(b)所示，可以存在四个这样的围绕中介层100的四个角部中的每个角部的阻拦件，在这些阻拦件中围绕其他两个角部的另外两个阻拦件未在图1(a)中示出。
当中介层100可以用于形成封装件或者PoP器件时，可以在封装件和中介层100之间使用底部填充材料来加强管芯至中介层的连接并且有助于防止热应力破坏管芯和中介层之间的连接。然而，由于毛细管作用对四个角部的底部填充物分配的影响，底部填充材料可能不能很好地保护位于封装件的角部的连接件(诸如位于角部区域1121和1122中的连接件)的连接，这可能导致一些连接件没有得到底部填充材料的保护。阻拦件1131、1132、1111和1112可以有助于将底部填充材料限制在角部区域内以覆盖连接件和保护连接。
阻拦件1131、1132、1111和1112可以包含诸如铝的导电材料，但是可以可选地使用诸如铜、钛或镍的其他材料。可以使用以下方法形成阻拦件1131、1132、1111和1112：使用诸如溅射的沉积工艺以形成材料层(未示出)，然后可以通过合适的工艺(诸如光刻掩蔽和蚀刻)去除部分材料层以形成阻拦件。阻拦件1131和1132可以与第一接触焊盘117同时形成。阻拦件1111和1112可以与第二接触焊盘121同时形成。如同第一接触焊盘117，可以形成阻拦件1131和1132作为凸块下金属(UBM)层的一部分。如同第二接触焊盘121，可以形成阻拦件1111和1112作为UBM层的一部分。此外，可以使用任何其他合适的工艺以形成阻拦件1131、1132、1111和1112，诸如形成开口，沉积用于阻拦件1131、1132、1111和1112的材料，然后平坦化该材料。
阻拦件1131、1132、1111和1112的宽度、高度或直径可以与诸如球(或凸块)的连接件的直径大致相同，或者可以是诸如球(或凸块)的连接件的直径尺寸的1/10。例如，阻拦件1131、1132、1111和1112可以具有宽度为约100μm至约200μm、高度介于约20μm至约30μm范围内的矩形。阻拦件1131、1132、1111和1112的高度可以具有与图1(c)所示的连接件129类似的尺寸，连接件129的直径尺寸可以为约200μm。阻拦件1131、1132、1111和1112可以具有窄的、宽的或者楔形的形状。阻拦件1131、1132、1111和1112的主体可以具有基本上不变的厚度。阻拦件1131、1132、1111和1112可以具有其他形状，诸如圆形、八边形、矩形、拉长的六边形(在该拉长的六边形的相对端部具有两个梯形)、卵形、菱形。
图1(b)示出位于第一金属层115上方的两个额外的阻拦件部分113，其可以用于保护放置在中介层的中心区域114的管芯下方的底部填充材料。图1(b)的所有其他部分与图1(a)中示出的那些部分相同。两个阻拦件部分113可以是围绕中介层100的中心114的阻拦件113的一部分，从而可以放置管芯并将其连接至阻拦件113所围绕的中介层的中心114。围绕中介层100的中心的阻拦件113可以提供支撑以将封装管芯下方的底部填充物控制在中介层100的中心内(如图1(c)和图1(d)所示)。阻拦件113可以由与用于阻拦件1131和1132的相同的材料形成，并且可以与阻拦件1131和1132同时形成。
图1(c)示出倒装芯片封装件200，其中用中介层100封装管芯131。管芯131位于将阻拦件1131和1132分别所围绕的角部区域1121和1122隔开的区域中。在封装管芯131的过程中，倒装管芯131从而使得连接件125接触衬底101上方的多个第一接触焊盘117。在阻拦件1131和1132之间的区域中，在管芯131下方且在管芯131和第一金属层115的表面之间填充底部填充物123。可以在阻拦件1131和1132上方进一步形成非导电阻拦件106。可以在区域1121和1122中的第一接触焊盘117上方放置多个连接件129用于连接至其他封装件从而进一步形成PoP结构。可以在第二接触焊盘121上方放置多个连接件139用于连接至PCB。
管芯131可以是由半导体晶圆形成的集成电路芯片。管芯131可以是用于特定应用的任何合适的集成电路管芯。例如，管芯131可以是存储芯片(诸如DRAM、SRAM、NVRAM)或者逻辑电路。
连接件125可以在第一接触焊盘117和管芯131之间提供连接。连接件125可以是诸如微凸块或者可控塌陷芯片连接(C4)凸块的接触凸块，并且连接件125可以包含诸如锡的材料或者诸如银或铜的其他合适的材料。在连接件125是锡焊料凸块的实施例中，可以首先通过任何合适的方法(诸如蒸发、电镀、印刷、焊料转移、球置放等)形成优选厚度为约100μm的锡层来形成连接件125。一旦在结构上方形成锡层，就可以实施回流以便将材料塑造成期望的凸块形状。
位于管芯131和第一金属层115的表面之间的底部填充物123加强了管芯131与中介层100的连接并且有助于防止热应力破坏管芯131和中介层100之间的连接。通常，选择用于底部填充物123的材料(诸如有机树脂)来控制底部填充物123的热膨胀系数和收缩。首先施加液体有机树脂使其流入管芯131和第一金属层115的表面之间的间隙中，随后液体有机树脂固化以控制固化期间发生在底部填充物中的收缩。阻拦件1131和1132可以阻止底部填充物123溢出到阻拦件1131和1132所围绕的角部。
如图1(c)所示，当阻拦件1131和1132的高度不够高以至于不足以停止底部填充物123的溢出时，可以在阻拦件1131和1132上方放置非导电阻拦件106。非导电阻拦件106可以由各种非导电材料形成，包括但不限于分散的有机隔离材料，诸如苯并三唑(BT)或改性硅树脂；热固性模塑料，诸如甲酚醛环氧树脂(ECN)或改性BT，或者热塑性化合物，诸如聚醚砜(PES)、聚碳酸酯或者聚砜。非导电阻拦件材料可以沉积在阻拦件1131和1132上方并且形成期望的形状。可以使用各种技术诸如液体分散方法、注入转移模塑和热压转移模塑来形成非导电阻拦件106。非导电阻拦件和在中介层上方形成的阻拦件一起使用可以使得封装更加灵活，从而调整封装工艺中所使用的底部填充材料的不同高度和量。
可以分别在第一接触焊盘117和第二接触焊盘121上形成多个连接件，诸如焊料球129和139。连接件129可以用于连接至另一封装件，诸如图2(a)和图3(a)示出的封装件300。连接件139可以用于连接至PCB(如图3(a)所示)。诸如129和139的连接件的数量仅用于说明的目的而不用于限制。连接件可以是提供电连接的任何连接器件，诸如焊料球。诸如焊料球139或129的多个连接件可以以球栅阵列的方式布置，形成封装器件的端子并且可以被连接至PCB或其他电路。
类似地，图1(d)示出倒装芯片封装件200，其中在位于第一金属层115上方的阻拦件113所围绕的区域中用中介层100来封装管芯131。如图1(b)所示，围绕中介层100的中心的阻拦件113可以提供支撑以将封装管芯下方的底部填充物控制在中介层100的中心内。与图1(c)示出的封装件200相比，另一阻拦件113将管芯131下方的底部填充材料限制在阻拦件113所围绕的区域内。类似于图1(c)示出的封装件，在封装管芯131的过程中，倒装管芯131从而使得连接件125接触衬底101上方的多个第一接触焊盘117。在阻拦件113所围绕的区域中，在管芯131下方且在管芯131和第一金属层115的表面之间填充底部填充物123。可以在阻拦件113上方进一步形成非导电阻拦件106。对图1(c)的更详细的描述同样可以适用于图1(d)的部件。
图2(a)示出通过将封装件300放置在封装件200上形成的PoP结构400的实施例，其中封装件200与图1(d)中示出的封装件相同。可以使用图1(c)中示出的封装件来代替封装件200以形成PoP结构400。还可以使用可选的封装件(诸如通过引线接合而不是倒装芯片技术形成的封装件)来形成PoP结构400。封装件300和封装件200可以通过连接件129电连接以形成PoP器件400。可以形成覆盖位于中介层的每个角部的连接件129的底部填充物141。底部填充物141可以被分别位于每个角部上的阻拦件1131和1132阻挡，从而使得底部填充材料不会远离连接件129，进而使连接件129受到底部填充材料的保护。
封装件300可以具有衬底301。可以在衬底301的一面上形成第一金属层317，并且可以在衬底301的另一面上形成第二金属层315。可以在金属层317和金属层315上形成诸如接触焊盘227的多个连接件。接触焊盘227可以用于连接至另一封装件，诸如底部的封装件200。可以在第二金属层315上安装第一IC管芯308。可以在第一IC管芯308上安装第二IC管芯306，二者被诸如导热粘合剂的连接材料隔离开，从而在管芯之间提供改善的热导率。可以使用侧面电互连件(side electrical interconnection)310将第一IC管芯308和第二IC管芯306都连接至位于第二金属层315上的接触焊盘227。密封剂或模具312可以覆盖诸如IC管芯306和308、侧面电互连件310、接触焊盘227和第二金属层315的部件。通孔(TV)(未示出)可以穿过衬底301用于在管芯308和其他电路之间提供电连接。
在实施例中，衬底301可以是任何合适的衬底，诸如硅衬底、高密度互连件、有机衬底、陶瓷衬底、介电衬底、层压衬底等。管芯308和306可以是存储芯片，诸如DRAM、SRAM、NVRAM或者是用于特定应用的逻辑芯片。可以在彼此的顶部上或一面上安装多个管芯。应该理解，管芯306和管芯308的结构、放置和定位仅用于说明的目的，并因此其他实施例可以采用不同的结构、放置和位置。
第一金属层317和第二金属层315可以是再分配层(RDL)。侧面电互连件310可以是接合线。连接件227可以包括例如接触焊盘、无铅焊料、共熔铅、导电柱、它们的组合和/或类似物。可以在部件上方形成密封剂或模具312以保护部件不受到环境和外部的污染。密封剂312可以由许多材料形成，诸如弹性体或刚性树脂(热固性环氧树脂、硅树脂和聚氨酯)，并且用于密封内部堆叠部件并保护内部堆叠部件免受冲击和振动。
可以在中介层100上形成的封装件200的第一接触焊盘117上形成一组连接件129，该组连接件129进一步连接至封装件300的一组接触焊盘227。连接件129可以被称为PoP连接件。
可以形成覆盖位于中介层的每个角部的连接件129的底部填充物141。底部填充物141可以由分别位于每个角部上的阻拦件1131和1132阻挡，从而使得底部填充物141不会远离连接件129移动，进而使连接件129受到底部填充物141的保护。位于封装件300和第一金属层115的表面之间的底部填充物141加强了封装件300与封装件200的连接并且有助于阻止热应力破坏连接。通常，选择用于底部填充物141的材料(诸如有机树脂)来控制底部填充物141的热膨胀系数和收缩。首先施加液体有机树脂使其流入到封装件300和第一金属层115的表面之间的间隙中，随后有机树脂固化以控制固化期间发生在底部填充物中的收缩。
图2(b)示出图2(a)所示的PoP结构400的俯视图。示出一组连接件129，其用于将封装件200连接至封装件300。在俯视图中示出围绕两个角部的阻拦件1131和1132。阻拦件1131和1132可以具有将角部区域1121和1122与中介层100的其余部分隔开的L形。对于阻拦件1131和1132，其他形状也是可能的。例如，阻拦件1131和1132可以使用半圆形。可以使用能够基本上将PoP连接件所处的角部区域与封装件的其他区域隔开的任何形状。阻拦件1131和1132可以是围绕该区域的一连续金属。可选地，在一些其他实施例中，阻拦件1131和1132可以包括围绕该区域的多个部分，如图2(c)所示。只要阻拦件1131和1132能够使底部填充物141停止远离连接件129移动并且使连接件129受到底部填充物141的保护，就可以使用阻拦件1131和1132。
如图2(b)所示，可以存在四个这样的围绕中介层100的四个角部中的每个角部的阻拦件。在中介层100上在中心区域中通过阻拦件113与四个角部隔开放置管芯131。阻拦件113的加入可以进一步阻挡底部填充物123覆盖连接的其他部分。
因此，在完成PoP结构400的形成之后可以继续其他的常规工艺。例如，可以通过位于封装件200的连接件139(如图3(a)所示)将PoP结构400连接至印刷电路板(PCB)151。PCB151可以是由玻璃纤维或类似的材料形成的薄板。电线被“印刷”到板上，连接各种部件和封装件(诸如图3(a)所示的封装件200和封装件300)。可选地，PoP结构400可以放置在高密度互连件、硅衬底、有机衬底、陶瓷衬底、介电衬底、层压衬底、另一半导体封装件或类似器件上。
如图3(a)所示，PoP结构400可以通过连接件139电连接至PCB151。类似于在中介层100上形成阻拦件1131和1132，可以在PCB151上形成阻拦件1091和1092以将PCB的角部与PCB的其余部分隔开。可以形成覆盖位于PCB的每个角部的连接件139的底部填充物143。底部填充物143可以被分别位于每个角部上的阻拦件1091和1092阻挡，从而使得底部填充物不会远离连接件139移动，进而使连接件139受到底部填充物143的保护。位于PCB上的阻拦件1091和1092与位于中介层100的第二面上的阻拦件1111和1112可以有助于将底部填充物143限制在角部区域内以覆盖连接件139和保护连接。
在PCB151上形成的阻拦件1091和1092可以位于与金属阻拦件1111和1112在中介层100上所处的位置类似的位置，从而使得阻拦件1091对应于阻拦件1111，阻拦件1092对应于阻拦件1112。它们一起对用于覆盖位于每个角部的连接件139的底部填充材料形成更好的保护。从PCB的边缘起测量，阻拦件1091和1092可以位于大约1/3的PCB长度的点。
图3(b)示出连接至PCB151的PoP结构400的俯视图。PCB151具有图3(b)所示的四个角部，而图3(a)仅示出位于两个角部上的阻拦件1091和1092。也可以存在围绕其他两个角部的另外两个阻拦件。阻拦件1091和1092可以具有将角部与PCB的其余部分隔开的L形。如图3(b)所示，可以存在四个这样的围绕PCB151的四个角部中的每个角部的阻拦件。围绕PCB的角部的阻拦件将底部填充物143阻挡在角部区域内以覆盖连接件139。
尽管已经详细地描述了本发明实施例及其优势，但应该理解，可以在不背离所附权利要求限定的实施例的精神和范围的情况下，进行各种改变、替换和更改。例如，本领域技术人员应该很容易理解，本文所描述的许多部件、功能、工艺和材料可以变化，但仍然保留在本发明的范围内。而且，本申请的范围并不仅限于本说明书中描述的工艺、机器、制造、材料组分、装置、方法和步骤的特定实施例。作为本发明本领域普通技术人员根据本发明的发明内容应很容易理解，根据本发明可以利用现有的或今后开发的用于执行与本文所述相应实施例基本上相同的功能或者获得基本上相同的结果的工艺、机器、制造、材料组分、装置、方法或步骤。因此，所附权利要求预期在其范围内包括这样的工艺、机器、制造、材料组分、装置、方法或步骤。

Claims (10)

1.一种器件，包括：
衬底，具有第一表面和第二表面；
第一金属层，位于所述衬底的第一表面的上方；
第一接触焊盘，位于所述第一金属层的上方；以及
第一阻拦件，位于所述第一金属层上方，其中所述第一阻拦件围绕所述第一金属层的第一角部周围的第一区域，并且所述第一接触焊盘位于所述第一区域内。
2.根据权利要求1所述的器件，进一步包括：
第二接触焊盘，位于所述第一金属层上方；以及
第二阻拦件，位于所述第一金属层上方，其中所述第二阻拦件围绕所述第一金属层的第二角部周围的第二区域，并且所述第二接触焊盘位于所述第二区域内。
3.根据权利要求1所述的器件，进一步包括：
第二金属层，位于所述衬底的第二表面上方；
第三接触焊盘，位于所述第二金属层上方；以及
第三阻拦件，位于所述第二金属层上方，其中所述第三阻拦件围绕所述第二金属层的角部周围的第三区域，并且所述第三接触焊盘位于所述第三区域内。
4.根据权利要求1所述的器件，进一步包括：位于所述第一金属层上方围绕所述第一金属层的中心周围的区域的第四阻拦件。
5.根据权利要求1所述的器件，其中，所述第一阻拦件包括围绕所述第一角部周围的第一区域的多个不连续的金属部分；或者所述第一阻拦件包括选自基本上由铝、铜、钛、镍和它们的组合所组成的组中的导电材料。
6.根据权利要求1所述的器件，其中，所述第一阻拦件具有高度介于约连接件的直径尺寸至连接件的直径尺寸的约1/10的范围内的矩形。
7.根据权利要求1所述的器件，其中，所述第一阻拦件的主体具有基本上不变的厚度。
8.根据权利要求1所述的器件，其中，所述第一阻拦件包括导电材料的第一层和非导电材料的第二层，所述非导电材料选自基本上由苯并三唑(BT)、改性硅树脂、甲酚醛环氧树脂(ECN)、改性BT、聚醚砜(PES)、聚碳酸酯、聚砜和它们的组合所组成的组。
9.一种形成器件的方法，包括：
在衬底的第一表面上方形成第一金属层；
在所述第一金属层上方形成第一接触焊盘；以及
在所述第一金属层上方形成第一阻拦件，其中所述第一阻拦件围绕所述第一金属层的第一角部周围的第一区域，并且所述第一接触焊盘位于所述第一区域内。
10.一种器件，包括：
衬底，具有第一表面和第二表面；
第一金属层，位于所述衬底的第一表面上方；
第一接触焊盘，位于所述第一金属层的上方；
第一阻拦件，位于所述第一金属层上方，其中所述第一阻拦件围绕所述第一金属层的第一角部周围的第一区域，并且所述第一接触焊盘位于所述第一区域内；
非导电阻拦件，位于所述第一阻拦件上方；
连接件，位于所述第一接触焊盘上方；
封装件，连接至所述连接件，其中所述封装件包括衬底和连接至所述衬底的管芯；以及
底部填充物，位于所述封装件下方、所述第一金属层上方，覆盖所述连接件且包含在所述第一阻拦件所围绕的第一区域内。
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