CN103782380B - 半导体模块 - Google Patents
半导体模块 Download PDFInfo
- Publication number
- CN103782380B CN103782380B CN201280039872.8A CN201280039872A CN103782380B CN 103782380 B CN103782380 B CN 103782380B CN 201280039872 A CN201280039872 A CN 201280039872A CN 103782380 B CN103782380 B CN 103782380B
- Authority
- CN
- China
- Prior art keywords
- electrode
- terminal
- electrode pattern
- semiconductor element
- semiconductor module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/25—Arrangements for cooling characterised by their materials
- H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/63—Vias, e.g. via plugs
- H10W70/635—Through-vias
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5438—Dispositions of bond wires the bond wires having multiple connections on the same bond pad
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5453—Dispositions of bond wires connecting between multiple bond pads on a chip, e.g. daisy chain
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/547—Dispositions of multiple bond wires
- H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Inverter Devices (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011184019A JP5798412B2 (ja) | 2011-08-25 | 2011-08-25 | 半導体モジュール |
| JP2011-184019 | 2011-08-25 | ||
| PCT/JP2012/071398 WO2013027819A1 (ja) | 2011-08-25 | 2012-08-24 | 半導体モジュール |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103782380A CN103782380A (zh) | 2014-05-07 |
| CN103782380B true CN103782380B (zh) | 2019-12-13 |
Family
ID=47746554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280039872.8A Active CN103782380B (zh) | 2011-08-25 | 2012-08-24 | 半导体模块 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8921998B2 (https=) |
| EP (1) | EP2750184B1 (https=) |
| JP (1) | JP5798412B2 (https=) |
| CN (1) | CN103782380B (https=) |
| WO (1) | WO2013027819A1 (https=) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016012973A (ja) * | 2014-06-27 | 2016-01-21 | 株式会社オートネットワーク技術研究所 | 回路装置 |
| US10522517B2 (en) | 2014-07-03 | 2019-12-31 | Nissan Motor Co., Ltd. | Half-bridge power semiconductor module and manufacturing method therefor |
| CN106062949B (zh) | 2014-09-17 | 2018-11-30 | 富士电机株式会社 | 半导体模块 |
| JP2016061661A (ja) * | 2014-09-17 | 2016-04-25 | 富士電機株式会社 | 圧力センサ装置および圧力センサ装置の製造方法 |
| JP6327105B2 (ja) * | 2014-10-17 | 2018-05-23 | 三菱電機株式会社 | 半導体装置 |
| US10756057B2 (en) * | 2014-11-28 | 2020-08-25 | Nissan Motor Co., Ltd. | Half-bridge power semiconductor module and method of manufacturing same |
| JP2016115900A (ja) * | 2014-12-18 | 2016-06-23 | 三菱電機株式会社 | 半導体モジュールおよび半導体装置 |
| CN104867888A (zh) * | 2015-05-04 | 2015-08-26 | 嘉兴斯达半导体股份有限公司 | 一种高散热性SiC的功率模块 |
| WO2017002390A1 (ja) * | 2015-06-30 | 2017-01-05 | シャープ株式会社 | 回路モジュール |
| EP3226014B1 (en) * | 2016-03-30 | 2024-01-10 | Mitsubishi Electric R&D Centre Europe B.V. | Method for estimating a level of damage or a lifetime expectation of a power semiconductor module comprising at least one die |
| US10404186B2 (en) | 2016-10-27 | 2019-09-03 | General Electric Company | Power module systems and methods having reduced common mode capacitive currents and reduced electromagnetic interference |
| JP6809294B2 (ja) * | 2017-03-02 | 2021-01-06 | 三菱電機株式会社 | パワーモジュール |
| JP2018195694A (ja) * | 2017-05-17 | 2018-12-06 | 株式会社Soken | 電力変換器 |
| JP6888468B2 (ja) * | 2017-08-01 | 2021-06-16 | 富士電機株式会社 | 鉄道車両用電力変換装置 |
| JP7252705B2 (ja) * | 2017-09-28 | 2023-04-05 | デンカ株式会社 | 多層回路基板及びその製造方法 |
| JP2019091804A (ja) | 2017-11-15 | 2019-06-13 | シャープ株式会社 | パワー半導体モジュールおよび電子機器 |
| JP6954029B2 (ja) * | 2017-11-15 | 2021-10-27 | 富士電機株式会社 | 電力変換装置および鉄道車両用電力変換装置 |
| US10411609B2 (en) * | 2017-12-22 | 2019-09-10 | Panasonic Intellectual Property Management Co., Ltd. | Substrate mounted inverter device |
| CN111199959B (zh) * | 2018-11-19 | 2021-11-02 | 台达电子企业管理(上海)有限公司 | 功率模块的封装结构 |
| WO2020261433A1 (ja) * | 2019-06-26 | 2020-12-30 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
| TWI735179B (zh) * | 2020-03-11 | 2021-08-01 | 佳世達科技股份有限公司 | 電子裝置與其減低漏電流方法 |
| JP7318615B2 (ja) * | 2020-09-11 | 2023-08-01 | トヨタ自動車株式会社 | 電力変換装置 |
| FR3131503B1 (fr) * | 2021-12-28 | 2025-09-12 | Thales Sa | Composant de puissance à filtrage local et convertisseur mettant en œuvre plusieurs composants de puissance à filtrage local |
| CN114725055A (zh) * | 2022-02-28 | 2022-07-08 | 华为数字能源技术有限公司 | 一种功率模块、电力系统和电子设备 |
| EP4519918A1 (en) * | 2022-05-19 | 2025-03-12 | Huawei Digital Power Technologies Co., Ltd. | Power converter package with shielding against common mode conducted emissions |
| JP2024015805A (ja) | 2022-07-25 | 2024-02-06 | マツダ株式会社 | スイッチングデバイスおよびスイッチングモジュール |
| CN120072785A (zh) * | 2023-11-28 | 2025-05-30 | 华为数字能源技术有限公司 | 功率模组以及光伏优化器 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100373604C (zh) * | 2002-07-15 | 2008-03-05 | 国际整流器公司 | 高功率mcm封装 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2777464B2 (ja) * | 1990-07-18 | 1998-07-16 | 株式会社日立製作所 | 電子装置と、これを用いたエンジンの点火装置 |
| DE4418426B4 (de) * | 1993-09-08 | 2007-08-02 | Mitsubishi Denki K.K. | Halbleiterleistungsmodul und Verfahren zur Herstellung des Halbleiterleistungsmoduls |
| EP0661748A1 (en) * | 1993-12-28 | 1995-07-05 | Hitachi, Ltd. | Semiconductor device |
| JP3429921B2 (ja) * | 1995-10-26 | 2003-07-28 | 三菱電機株式会社 | 半導体装置 |
| JP3649259B2 (ja) | 1996-04-26 | 2005-05-18 | 株式会社安川電機 | インバータ装置 |
| JP2000031325A (ja) * | 1998-07-13 | 2000-01-28 | Hitachi Ltd | 半導体パワーモジュール及びこれを用いたインバータ装置 |
| JP3676268B2 (ja) * | 2001-08-01 | 2005-07-27 | 株式会社日立製作所 | 伝熱構造体及び半導体装置 |
| US6747300B2 (en) * | 2002-03-04 | 2004-06-08 | Ternational Rectifier Corporation | H-bridge drive utilizing a pair of high and low side MOSFETs in a common insulation housing |
| EP1594164B1 (en) * | 2003-02-14 | 2012-05-09 | Hitachi, Ltd. | Integrated circuit for driving semiconductor device |
| JP2005020868A (ja) * | 2003-06-25 | 2005-01-20 | Fuji Electric Fa Components & Systems Co Ltd | 電力変換回路 |
| JP4195398B2 (ja) * | 2004-01-29 | 2008-12-10 | 関西電力株式会社 | 半導体装置及びそれを用いた電力装置 |
| JP2005332874A (ja) * | 2004-05-18 | 2005-12-02 | Hitachi Metals Ltd | 回路基板及びこれを用いた半導体装置 |
| US8154114B2 (en) * | 2007-08-06 | 2012-04-10 | Infineon Technologies Ag | Power semiconductor module |
| US8018047B2 (en) * | 2007-08-06 | 2011-09-13 | Infineon Technologies Ag | Power semiconductor module including a multilayer substrate |
| JP5272191B2 (ja) * | 2007-08-31 | 2013-08-28 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP5407198B2 (ja) * | 2008-07-02 | 2014-02-05 | 富士電機株式会社 | 電力変換装置のパワーモジュール |
| JP5355506B2 (ja) * | 2010-07-02 | 2013-11-27 | 本田技研工業株式会社 | 半導体装置 |
| CN102339818B (zh) * | 2010-07-15 | 2014-04-30 | 台达电子工业股份有限公司 | 功率模块及其制造方法 |
| CN102340233B (zh) * | 2010-07-15 | 2014-05-07 | 台达电子工业股份有限公司 | 功率模块 |
| JP2012039825A (ja) * | 2010-08-11 | 2012-02-23 | Toyo Electric Mfg Co Ltd | 電力変換装置 |
-
2011
- 2011-08-25 JP JP2011184019A patent/JP5798412B2/ja active Active
-
2012
- 2012-08-24 US US14/236,236 patent/US8921998B2/en active Active
- 2012-08-24 EP EP12825114.7A patent/EP2750184B1/en active Active
- 2012-08-24 CN CN201280039872.8A patent/CN103782380B/zh active Active
- 2012-08-24 WO PCT/JP2012/071398 patent/WO2013027819A1/ja not_active Ceased
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100373604C (zh) * | 2002-07-15 | 2008-03-05 | 国际整流器公司 | 高功率mcm封装 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2750184A4 (en) | 2015-08-26 |
| JP5798412B2 (ja) | 2015-10-21 |
| CN103782380A (zh) | 2014-05-07 |
| EP2750184B1 (en) | 2020-10-07 |
| US8921998B2 (en) | 2014-12-30 |
| EP2750184A1 (en) | 2014-07-02 |
| US20140159225A1 (en) | 2014-06-12 |
| WO2013027819A1 (ja) | 2013-02-28 |
| JP2013045974A (ja) | 2013-03-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20171211 Address after: Kanagawa Applicant after: NISSAN MOTOR Co.,Ltd. Applicant after: FUJI ELECTRIC Co.,Ltd. Address before: Kanagawa Applicant before: NISSAN MOTOR Co.,Ltd. Applicant before: Sanken Electric Co.,Ltd. Applicant before: FUJI ELECTRIC Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |