JP5798412B2 - 半導体モジュール - Google Patents

半導体モジュール Download PDF

Info

Publication number
JP5798412B2
JP5798412B2 JP2011184019A JP2011184019A JP5798412B2 JP 5798412 B2 JP5798412 B2 JP 5798412B2 JP 2011184019 A JP2011184019 A JP 2011184019A JP 2011184019 A JP2011184019 A JP 2011184019A JP 5798412 B2 JP5798412 B2 JP 5798412B2
Authority
JP
Japan
Prior art keywords
electrode
electrode pattern
terminal
semiconductor module
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011184019A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013045974A5 (https=
JP2013045974A (ja
Inventor
祐輔 図子
祐輔 図子
村上　善則
善則 村上
智 谷本
谷本　　智
佐藤　伸二
伸二 佐藤
康平 松井
康平 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Nissan Motor Co Ltd
Sanken Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Nissan Motor Co Ltd
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Nissan Motor Co Ltd, Sanken Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP2011184019A priority Critical patent/JP5798412B2/ja
Priority to US14/236,236 priority patent/US8921998B2/en
Priority to PCT/JP2012/071398 priority patent/WO2013027819A1/ja
Priority to EP12825114.7A priority patent/EP2750184B1/en
Priority to CN201280039872.8A priority patent/CN103782380B/zh
Publication of JP2013045974A publication Critical patent/JP2013045974A/ja
Publication of JP2013045974A5 publication Critical patent/JP2013045974A5/ja
Application granted granted Critical
Publication of JP5798412B2 publication Critical patent/JP5798412B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5438—Dispositions of bond wires the bond wires having multiple connections on the same bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5453—Dispositions of bond wires connecting between multiple bond pads on a chip, e.g. daisy chain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Inverter Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
JP2011184019A 2011-08-25 2011-08-25 半導体モジュール Active JP5798412B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011184019A JP5798412B2 (ja) 2011-08-25 2011-08-25 半導体モジュール
US14/236,236 US8921998B2 (en) 2011-08-25 2012-08-24 Semiconductor module
PCT/JP2012/071398 WO2013027819A1 (ja) 2011-08-25 2012-08-24 半導体モジュール
EP12825114.7A EP2750184B1 (en) 2011-08-25 2012-08-24 Semiconductor module
CN201280039872.8A CN103782380B (zh) 2011-08-25 2012-08-24 半导体模块

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011184019A JP5798412B2 (ja) 2011-08-25 2011-08-25 半導体モジュール

Publications (3)

Publication Number Publication Date
JP2013045974A JP2013045974A (ja) 2013-03-04
JP2013045974A5 JP2013045974A5 (https=) 2014-08-07
JP5798412B2 true JP5798412B2 (ja) 2015-10-21

Family

ID=47746554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011184019A Active JP5798412B2 (ja) 2011-08-25 2011-08-25 半導体モジュール

Country Status (5)

Country Link
US (1) US8921998B2 (https=)
EP (1) EP2750184B1 (https=)
JP (1) JP5798412B2 (https=)
CN (1) CN103782380B (https=)
WO (1) WO2013027819A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10756011B2 (en) 2017-11-15 2020-08-25 Sharp Kabushiki Kaisha Power semiconductor module, electronic device, and method for controlling power semiconductor module

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016012973A (ja) * 2014-06-27 2016-01-21 株式会社オートネットワーク技術研究所 回路装置
US10522517B2 (en) 2014-07-03 2019-12-31 Nissan Motor Co., Ltd. Half-bridge power semiconductor module and manufacturing method therefor
CN106062949B (zh) 2014-09-17 2018-11-30 富士电机株式会社 半导体模块
JP2016061661A (ja) * 2014-09-17 2016-04-25 富士電機株式会社 圧力センサ装置および圧力センサ装置の製造方法
JP6327105B2 (ja) * 2014-10-17 2018-05-23 三菱電機株式会社 半導体装置
US10756057B2 (en) * 2014-11-28 2020-08-25 Nissan Motor Co., Ltd. Half-bridge power semiconductor module and method of manufacturing same
JP2016115900A (ja) * 2014-12-18 2016-06-23 三菱電機株式会社 半導体モジュールおよび半導体装置
CN104867888A (zh) * 2015-05-04 2015-08-26 嘉兴斯达半导体股份有限公司 一种高散热性SiC的功率模块
WO2017002390A1 (ja) * 2015-06-30 2017-01-05 シャープ株式会社 回路モジュール
EP3226014B1 (en) * 2016-03-30 2024-01-10 Mitsubishi Electric R&D Centre Europe B.V. Method for estimating a level of damage or a lifetime expectation of a power semiconductor module comprising at least one die
US10404186B2 (en) 2016-10-27 2019-09-03 General Electric Company Power module systems and methods having reduced common mode capacitive currents and reduced electromagnetic interference
JP6809294B2 (ja) * 2017-03-02 2021-01-06 三菱電機株式会社 パワーモジュール
JP2018195694A (ja) * 2017-05-17 2018-12-06 株式会社Ｓｏｋｅｎ 電力変換器
JP6888468B2 (ja) * 2017-08-01 2021-06-16 富士電機株式会社 鉄道車両用電力変換装置
JP7252705B2 (ja) * 2017-09-28 2023-04-05 デンカ株式会社 多層回路基板及びその製造方法
JP6954029B2 (ja) * 2017-11-15 2021-10-27 富士電機株式会社 電力変換装置および鉄道車両用電力変換装置
US10411609B2 (en) * 2017-12-22 2019-09-10 Panasonic Intellectual Property Management Co., Ltd. Substrate mounted inverter device
CN111199959B (zh) * 2018-11-19 2021-11-02 台达电子企业管理（上海）有限公司 功率模块的封装结构
WO2020261433A1 (ja) * 2019-06-26 2020-12-30 三菱電機株式会社 半導体装置および電力変換装置
TWI735179B (zh) * 2020-03-11 2021-08-01 佳世達科技股份有限公司 電子裝置與其減低漏電流方法
JP7318615B2 (ja) * 2020-09-11 2023-08-01 トヨタ自動車株式会社 電力変換装置
FR3131503B1 (fr) * 2021-12-28 2025-09-12 Thales Sa Composant de puissance à filtrage local et convertisseur mettant en œuvre plusieurs composants de puissance à filtrage local
CN114725055A (zh) * 2022-02-28 2022-07-08 华为数字能源技术有限公司 一种功率模块、电力系统和电子设备
EP4519918A1 (en) * 2022-05-19 2025-03-12 Huawei Digital Power Technologies Co., Ltd. Power converter package with shielding against common mode conducted emissions
JP2024015805A (ja) 2022-07-25 2024-02-06 マツダ株式会社 スイッチングデバイスおよびスイッチングモジュール
CN120072785A (zh) * 2023-11-28 2025-05-30 华为数字能源技术有限公司 功率模组以及光伏优化器

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2777464B2 (ja) * 1990-07-18 1998-07-16 株式会社日立製作所 電子装置と、これを用いたエンジンの点火装置
DE4418426B4 (de) * 1993-09-08 2007-08-02 Mitsubishi Denki K.K. Halbleiterleistungsmodul und Verfahren zur Herstellung des Halbleiterleistungsmoduls
EP0661748A1 (en) * 1993-12-28 1995-07-05 Hitachi, Ltd. Semiconductor device
JP3429921B2 (ja) * 1995-10-26 2003-07-28 三菱電機株式会社 半導体装置
JP3649259B2 (ja) 1996-04-26 2005-05-18 株式会社安川電機 インバータ装置
JP2000031325A (ja) * 1998-07-13 2000-01-28 Hitachi Ltd 半導体パワーモジュール及びこれを用いたインバータ装置
JP3676268B2 (ja) * 2001-08-01 2005-07-27 株式会社日立製作所 伝熱構造体及び半導体装置
US6747300B2 (en) * 2002-03-04 2004-06-08 Ternational Rectifier Corporation H-bridge drive utilizing a pair of high and low side MOSFETs in a common insulation housing
US6946740B2 (en) * 2002-07-15 2005-09-20 International Rectifier Corporation High power MCM package
EP1594164B1 (en) * 2003-02-14 2012-05-09 Hitachi, Ltd. Integrated circuit for driving semiconductor device
JP2005020868A (ja) * 2003-06-25 2005-01-20 Fuji Electric Fa Components & Systems Co Ltd 電力変換回路
JP4195398B2 (ja) * 2004-01-29 2008-12-10 関西電力株式会社 半導体装置及びそれを用いた電力装置
JP2005332874A (ja) * 2004-05-18 2005-12-02 Hitachi Metals Ltd 回路基板及びこれを用いた半導体装置
US8154114B2 (en) * 2007-08-06 2012-04-10 Infineon Technologies Ag Power semiconductor module
US8018047B2 (en) * 2007-08-06 2011-09-13 Infineon Technologies Ag Power semiconductor module including a multilayer substrate
JP5272191B2 (ja) * 2007-08-31 2013-08-28 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP5407198B2 (ja) * 2008-07-02 2014-02-05 富士電機株式会社 電力変換装置のパワーモジュール
JP5355506B2 (ja) * 2010-07-02 2013-11-27 本田技研工業株式会社 半導体装置
CN102339818B (zh) * 2010-07-15 2014-04-30 台达电子工业股份有限公司 功率模块及其制造方法
CN102340233B (zh) * 2010-07-15 2014-05-07 台达电子工业股份有限公司 功率模块
JP2012039825A (ja) * 2010-08-11 2012-02-23 Toyo Electric Mfg Co Ltd 電力変換装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10756011B2 (en) 2017-11-15 2020-08-25 Sharp Kabushiki Kaisha Power semiconductor module, electronic device, and method for controlling power semiconductor module

Also Published As

Publication number Publication date
EP2750184A4 (en) 2015-08-26
CN103782380B (zh) 2019-12-13
CN103782380A (zh) 2014-05-07
EP2750184B1 (en) 2020-10-07
US8921998B2 (en) 2014-12-30
EP2750184A1 (en) 2014-07-02
US20140159225A1 (en) 2014-06-12
WO2013027819A1 (ja) 2013-02-28
JP2013045974A (ja) 2013-03-04

Similar Documents

Publication Publication Date Title
JP5798412B2 (ja) 半導体モジュール
JP6513303B2 (ja) 電力用半導体モジュールおよび電力変換装置
US9685879B2 (en) Power semiconductor module and power conversion device
JP6865838B2 (ja) 半導体モジュール及び電力変換装置
US12438115B2 (en) Power semiconductor module
JP6425380B2 (ja) パワー回路およびパワーモジュール
JP6717270B2 (ja) 半導体モジュール
JP7642714B2 (ja) 半導体装置
JP5783997B2 (ja) 電力用半導体装置
JP5407198B2 (ja) 電力変換装置のパワーモジュール
JP6096614B2 (ja) パワー半導体モジュールおよびそれを用いた電力変換装置
JP2013175727A (ja) 半導体モジュール
JP6750620B2 (ja) 半導体モジュール
CN104124877A (zh) 三级变流器半桥
WO2020158057A1 (ja) パワー半導体モジュールおよびそれを用いた電力変換装置
JP2019017112A (ja) パワー回路
WO2021038724A1 (ja) 電力用半導体モジュール及び電力変換装置
KR20180126371A (ko) 전력 변환기
JP2022050887A (ja) 半導体装置
CN111696976A (zh) 功率半导体模块衬底及其所应用的电动机车
JP2024008998A (ja) 電子回路、半導体モジュール及び半導体装置
JP5119741B2 (ja) スイッチングモジュール
JP2025174867A (ja) 半導体装置及び電力変換装置
JP2008300530A (ja) スイッチングモジュール

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140619

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140619

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150602

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150630

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150818

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150821

R150 Certificate of patent or registration of utility model

Ref document number: 5798412

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150