CN103718279B - 用于半导体器件的电磁干扰屏蔽和热耗散 - Google Patents
用于半导体器件的电磁干扰屏蔽和热耗散 Download PDFInfo
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Abstract
公开了一种存储装置和制造存储装置的方法,该存储装置包括屏蔽电磁辐射和/或散热的金属层。金属层形成于金属层转印组件上。金属层转印组件和未封装的存储装置被置于模具中并被封装。在封装和固化模塑料期间,将金属层从屏蔽转印到封装的存储装置。
Description
技术领域
本技术涉及半导体器件的制造。
背景技术
对便携式消耗电子产品的需求的强势增长驱动了对高容量存储装置的需求。非易失性半导体存储器件,例如闪速存储器存储卡,正广泛用于满足对数字信息存储和交换的不断增长的需求。它们的便携性、通用性和结实的设计,连同其高可靠性和大容量,使得这样的存储装置可理想用于各种电子装置中,包括,例如数字摄像机、数字音乐播放器、视频游戏控制台、PDA和蜂窝电话。
尽管已知各式各样的封装配置,但通常可以将闪速存储器存储卡制造成单封装系统(SiP)或多芯片模块(MCM),其中以堆叠结构在衬底上安装多个裸芯。在现有技术图1和2中示出了常规半导体封装20(没有模塑料)的边视图。典型的封装包括安装到衬底26上的多个半导体裸芯22、24。已知以相互偏移的方式(现有技术图1)或堆叠结构逐层堆积半导体裸芯。在堆叠结构中,可以由其中可以埋设来自下方裸芯的焊丝的膜层或间隔体层34(现有技术图2)来分隔裸芯22、24。尽管图1和2中未示出,但半导体裸芯在裸芯上表面上形成有裸芯焊垫。衬底26可以由夹在上下导电层之间的电绝缘内核形成。
可以蚀刻上和/或下导电层以形成包括电气引线和结合叉指的导电图案。可以在半导体裸芯22、24的裸芯结合焊垫和衬底26的结合叉指之间结合丝焊以将半导体裸芯电耦合到衬底。衬底上的电气引线又提供了裸芯和主机装置之间的电路径。一旦形成了裸芯和衬底之间的电连接,通常以膜塑料包覆组件以提供保护性封装。
随着电子部件变得越来越小并以越来越高频率工作,由电磁干扰(EMI)和射频干扰(RFI)导致的噪声和串扰变得更加令人关注。电磁辐射是由携带迅速变化的信号的电路发射的,是其正常工作的副产品。EMI是向其他电路诱发的电磁辐射,导致不希望的信号(干扰或噪声)。RFI是射频电磁辐射从一个电路向另一个电路的传输,也导致不希望的干扰或噪声。
一些半导体封装曾尝试在半导体封装级上屏蔽EMI和RFI辐射的发射和接收。尽管防止了干扰,但这些常规方案具有其他缺点,使得在封装级包括这样的特征是不合需要的。因此,通常在使用半导体封装的主机装置级进行屏蔽。主机装置级的方案通常涉及在接收或安装半导体封装的空间周围提供金属屏蔽。
附图说明
图1和2是省略了模塑料的两种常规半导体封装设计的现有技术侧视图。
图3是本公开实施例的流程图。
图4是根据本公开实施例在封装过程期间形成于存储器件上的金属层转印组件一部分的侧视图。
图5是根据本公开实施例在封装之前的存储装置面板。
图6是封装存储装置之前上模板上的存储装置面板和下模板上的金属层转印组件的侧视图。
图7是图6中的侧视图,还包括下模板中的模塑料。
图8示出了图7模板和模塑料的侧视图,其中存储装置浸入模塑料中。
图9是固化模塑料之后模塑料中的上下模板和存储装置的侧视图。
图10是已封装存储装置的面板俯视图,金属层被从金属层转印组件转印到模塑料上。
图11是根据本公开实施例的包括金属层的个体化存储装置。
图12是根据本公开可选实施例的包括金属层的个体化存储装置。
图13是通过图11的线13-13的截面。
图14和15是类似于图13的视图,示出了本公开的其他实施例。
图16是示出了根据本公开实施例的衬底、存储器裸芯和接地夹的透视图。
图17是示出了图16的衬底、存储器裸芯和接地夹的侧视图。
图18是具有接地夹和下模板的存储装置侧视图,下模板包括金属层转印组件和模塑料。
图19是图18中的侧视图,其中接地夹与底模板上的金属层转印组件啮合。
图20是图19中的侧视图,其中接地夹压到底模板上的金属层转印组件。
图21是根据本公开实施例的已完成的存储装置。
图22示出了可选实施例,其中在封装之后在模塑料上形成屏蔽和/或散热层。
具体实施方式
现在将参考关于包括EMI/RFI屏蔽和热耗散的半导体器件的图3到22来描述实施例。应该理解,本发明可以通过很多不同形式实现,而不应被解释为限于本文所阐述的实施例。相反,提供这些实施例是为了使本公开全面完整,并将向本领域的技术人员充分传达本发明。实际上,本发明意在覆盖这些实施例的替代、修改和等同物,它们包括在如所附权利要求所限定的本发明的范围和精神之内。此外,在关于本发明的以下详细描述中,阐述了众多具体细节以便提供对本发明的透彻理解。然而,对本领域的普通技术人员而言,显然可以无需这样的具体细节来实践本发明。
本文中可能使用的术语“顶部”、“底部”、“上”、“下”、“垂直”和/或“水平”,仅仅是了方便和示例说明的目的,并非要限制发明的描述,因为所指代的物品可能位置发生交换。
图3是形成包括EMI/RFI屏蔽和热耗散的存储装置的实施例流程图。步骤102到110总体涉及金属层转印组件210的形成。步骤112到130总体涉及使用金属层转印组件形成半导体器件。下面更详细地解释每一个步骤。
步骤102到108描述例如图4中所示的形成金属层转印组件210的一个过程。金属层转印组件210可以由包括至少一个金属层的多层形成。金属层转印组件210的示例可以包括传热箔,例如来自上海HongNi Printing and Packing Material Co.,Ltd(在中国上海有营业场所),或IMR(模制辊)箔,例如来自Nissha Printing Co.,Ltd.(在日本京都有营业场所)。金属层转印组件可以包括ETFE(乙烯-四氟乙烯共聚物)背膜,例如来自Asahi GlassCo.,Ltd.(在日本东京有营业场所)以商品名销售的背膜。可以设想其他金属层转印组件。
金属层转印组件210可以具有几个层。在图4的侧视图中更详细地示出了金属层转印组件210的一个示例。图4中的金属层转印组件210例如可以是传热箔或IMR箔。金属层转印组件210可以包括背膜214,其例如可以是PET(聚对苯二甲酸乙二醇酯)膜。可以设想其他的背膜。
在步骤102中,可以向背膜214上施加脱模剂216。脱模剂216可以是已知的化合物,例如来自中国东莞Yimeiduo Transfer Material Co.,Ltd.的脱膜剂ZY-01,可以以多种工艺形式,例如通过凹版印刷机或涂布机施加脱模剂。脱模剂216可以是在室温下具有粘合性的固体,以便与背膜214粘合。然而,在加热金属层转印组件210时,脱膜剂216可能熔化并从背膜214分离,如下文所述。
在步骤104中,可以向脱膜剂216上沉积金属层218。金属层218可以是各种金属,例如铝或铝合金。其他可选的金属包括,但不限于金、铜及其合金。可以在步骤104中,例如在公知的真空汽化过程中沉积金属层218,其中在真空室中蒸发铝并在金属层转印组件210上沉积。
在步骤108中,可以向金属层218上施加粘合层220。粘合层例如可以是来自中国东莞Yimeiduo Transfer Material Co.,Ltd.的粘合剂XT-088PP,可以以各种工艺,例如通过凹版印刷机或涂布机施加此粘合剂层。如下所述,在被固化时,粘合层220能够交联并粘附到模塑料的表面。
在金属层转印组件210是传热箔的示例中,介质的总厚度可以约为30到32微米(μm)。使用IMR箔的示例可以稍厚,大约为50到100μm。在其他实施例中,使用这些箔的金属层转印组件210的厚度均可以比以上范围更厚或更薄。在这些示例中,金属层218可以具有大约0.05到20μm的厚度,或更具体地,为1到5μm,当然同样,在其他实施例中,金属层的厚度可以比这些范围更厚或更薄。在金属层是与PET层压/合成的铝箔时,厚度可以大于或等于10μm。
实施例中的金属层218可以是均匀沉积材料的单层。然而,在其他实施例中,金属层218可以由两种或更多不同材料构成,或者混合在一起,或者分别形成共同构成金属层。例如,一些金属和化合物在反射电磁波方面是有效的,而其他金属和化合物在吸收电磁波方面是有效的。为了进行反射,金属材料可以具有移动载流子,它们能够与电磁场交互作用。为了进行吸收,金属材料可以具有电或/和磁偶极子,例如金属氧化物,包括,但不限于铁氧体、BaTiO3和Fe3O4,它们与辐射中的电磁场交互作用。如本文所述,由金属层218实现的EMI/RFI屏蔽因此可以屏蔽反射、吸收或反射和吸收的组合。在金属层218中包括两种或更多种不同材料时,可以在彼此上沉积材料,或者可以通过另一粘合层将金属层218中的材料互相粘合。
金属层转印组件210可以任选地包括附加层。一种这样的附加层是提供于脱模层216和金属层218之间的图形层,附加层可以包括封装标记或其他图形。也可以将底漆层(primer layer)用于图形层。
再次参考图3的流程图,可以在步骤112和116中形成存储装置。图5示出了用于同时批处理若干存储装置250的面板240。图5示出了封装之前的存储装置250。每个存储装置250都可以形成有各种电子部件,例如一个或多个物理和电耦合至衬底248的存储器裸芯242、控制器裸芯244和无源部件246(在图5中的一个存储装置250上用数字标识)。
面板240例如可以是印刷电路板、引线框或卷带自动结合(TAB)带。仅以举例的方式示出了形成于面板240上的个体存储装置250的行和列数,在面板240的其他示例中,行和/或列数可以大于或小于图中显示的数目。
尽管图5的示例包括一个或多个存储器裸芯242和控制器裸芯244,但半导体裸芯的数量和类型对于本公开而言不是决定性的,在不同实施例中可以变化。存储装置250可以包括单个半导体裸芯,或者它可以包含,例如八个或更多存储器裸芯242以及与一控制器裸芯244。在实施例中,存储装置250还包括无源部件246,无源部件例如可以是电阻器、电容器、电感器和/或其他电气部件。图5中所示的示例具有两行存储装置250。显然,在其他实施例中,行数以及每行中存储装置250的数目可以变化。
在步骤116中,裸芯242、244可以彼此电结合和/或电结合到衬底248。在一个示例中,步骤116可以包括已知的丝焊过程,形成裸芯和衬底之间的线结合。在另一示例中,步骤116可以此外或可选地包括已知的倒装片接合工艺,以将一个或多个裸芯电耦合到衬底。
可以将金属层转印组件210形成为长卷,收集于一对卷轴之间,例如图6中所示的卷起轴和供带轴252。因此,单卷金属层转印组件210可以为几个衬底面板240提供屏蔽。来自日本京都的Towa Corporation的TowaFFT-1030铸模机使用了这种卷的例子。不过,在其他实施例中,金属层转印组件210可以形成为具有更短的长度。在一个这样的实施例中,金属层转印组件210可以具有仅稍大于或匹配面板240长度和宽度的长度和宽度。在TowaPMC-1040铸模机中使用了这样一片金属转印组件210的示例,该铸模机也来自日本京都的Towa Corporation。
通常,可以在金属层转印组件210的整个表面上施加金属层转印组件210的金属层218。在可选实施例中,在与面板240上存储装置250的位置对应的离散位置在金属层转印组件210上形成金属层218。因此,在将金属层转印组件210施加于面板240时,仅在离散的存储装置250上方形成金属层218,而不在存储装置250之间的底模板256中的空间中形成金属层。
可以彼此并行地执行形成金属层转印组件210中的步骤102、104和108以及形成存储装置面板中的步骤112和116,或者一个过程可以在其他的之前发生。在任何情况下,一旦制造了存储装置250的金属层转印组件210和面板240,就可以在步骤110和118中分别将它们放在封装模板之内。在图6的侧视图中示出了一个这样的示例。可以将衬底面板240安装到顶模板254,底模板256可以衬有(lined with)金属层转印组件210。
顶模板254例如可以是真空吸盘,用于抵抗重力将衬底面板保持在其上。在其他实施例中,可以通过其他紧固机构将衬底面板240保持在顶模板254上。在图示的示例中,金属层转印组件210比模板254、256长,从而延伸超过底模板256的端部。可以通过施加到底模板表面的负压,将屏蔽向下拉向底模板256。如上所述,可以将金属层转印组件210切割成一定尺寸,以便装在底模板256的四个边缘之内。在图示的实施例中,从附图的角度来看,金属层转印组件210的长度呈左右取向。不过,应该理解,可以在底模板256之内,与图中所示旋转90度(即进出页面)的方向,提供金属层转印组件,但不改变面板240的取向。
在步骤120中并如图7所示,可以向底模板256中,金属层转印组件210上方添加模塑料260。在实施例中,可以在室温下将模塑料以粉末或颗粒施加。可以向金属层转印组件210上施加模塑料,然后可以将金属层转印组件210和模塑料移动到底模板256上。在进一步的示例中,可以将金属层转印组件210首先设置于底模板256上,然后施加模塑料260。模塑料260可以是市售的树脂,例如由Kyocera Chemical Corporation(在日本Saitama有营业场所)以型号KE-G1250AH-W3E销售。
使用模塑料260,可以在步骤124中包封存储器封装250。可以由FFT(无流动薄)压制成型执行封装工艺。例如,在日本京都Towa Corporation的Matsutani,H.的题为“Compression Molding Solutions For Various High End Package and Cost SavingsFor Standard Package Applications,”Microelectronics and Packaging Conference,2009的出版物中公开并描述了这样的FFT压制成型工艺,本文将此出版物通过引用全文并入。通常,FFT压制机利用这样的技术:将衬底面板浸入包含熔融模塑料的模具中。模塑料填充面板被浸入部分上的所有孔洞,并在模塑料中将每个存储装置包封在一起,无须在裸芯或接合线上施加压力。可以使用的一种具体类型的FFT压制是PMC(纯麦芽压缩(pure maltcompression))成型。可以在其他实施例中使用其他类型的FFT压制技术和转印模制技术。
在步骤124中,在真空中或接近真空的条件下慢慢将顶和底模板254、256放在一起,如图7到图8的过渡所示。可以在将存储装置250浸入模塑料中时,将模塑料260加热到大约175℃。在此温度下,模塑料260可以处于粘滞度大约为16.2Pa·s的液相状态。应该理解,在其他实施例中,温度和粘滞度可以超过和低于这些值变化。
如图8所示,可以在175℃的温度下,模板将衬底面板240压到底模板256,持续大约13到15秒的时间。之后,可以执行固化和屏蔽转印步骤128。如图所示,这个步骤执行两个功能。首先,步骤128将模塑料260熔化成液体,然后将模塑料固化成围绕面板240上每个存储装置250的电子部件和丝焊位置周围的固体保护层。第二,步骤128将金属层转印组件210的粘合层220交联到模塑料260的相邻表面,同时熔化脱膜剂216,以将粘合层220和金属层转印组件210的金属层218粘贴并转印到模塑料260上。通过施加到底模板的负压,使背膜214保持在底模板256上。
于是,在如图9所示使模板254、256彼此分离时,金属层转印组件210的金属层218保留在模塑料260的表面中或表面上,而背膜214保留在底模板256上。图10中示出了包括转印的金属层218的面板240的俯视图(在金属层218形成于与面板240上的存储装置250位置对应的离散位置的实施例中)。
固化和屏蔽转印步骤128可能会花费大约90秒,并可以175℃的温度下进行。在使用一卷金属层转印组件210时,在执行上述步骤之后,可以推进该卷以在模板内部设置下一长度的金属层转印组件210,并重复该过程。在使用金属层转印组件210的预切割部分时,处理者移除背膜214,将预先切割的金属层转印组件210的新部分放在底模板256上。
在施加模塑料260之后,可以在步骤130分割面板240上的相应存储装置250,以形成完成的存储装置250,例如如图11所示。图11示出了存储装置250为微SD卡的示例。不过,应该理解,存储装置250可以是存储信息的各种非易失性存储器的任一种。存储装置的示例包括,但不限于手持式、可移除存储卡(例如SD或微SD卡)、手持式通用串行总线(“USB”)闪存驱动器(“UFD”)、嵌入式存储装置和可移除或不可移除硬盘驱动器(例如固态驱动器)。
在其他实施例中,一个或多个存储器裸芯242和/或控制器裸芯244可以在连接到衬底248之前自身被包封在模塑料中。在这样的实施例中,如本文使用的术语那样,可以将封装的存储器裸芯和/或控制器裸芯自身视为“存储装置”。
在实施例中,金属层218可以是金属的固体连续层。不过,在其他实施例中,金属层218可以形成有开口或网格图案,图12中示出了一种这样的图案。图12示出了金属层218包括多个矩形开口270,开口270在金属层218中大致界定了网格图案。在一个示例中,每个开口270可以是0.8mm×0.15mm,可以沿长度维度彼此间隔1mm,沿宽度维度彼此间隔0.4mm。在其他实施例中,开口270的尺寸和间距可以与这些维度不同。此外,在其他实施例中,开口270不必是矩形,而可以是正方形、圆形、卵形、椭圆形或其他形状。
在上述示例中,将金属层转印组件210置于底模板256中以在制成的存储装置250的顶表面上提供EMI/RFI屏蔽。在其他实施例中,除了底模板256之外或作为替代,可以在封装步骤之前将金属层转印组件210置于顶模板254中,以除了顶表面或作为替代,在制成的存储装置250底表面上提供EMI/RFI屏蔽。
除了节省时间和工艺步骤之外,在封装步骤期间在存储装置250上提供EMI/RFI屏蔽不会增加封装体的总厚度。将金属层转印组件210置于具有熔融模塑料的模具中。结果,金属层转印组件210,尤其是金属层218被嵌入模塑料的表面中,并且不会增加存储装置的总厚度。即,通过增加模塑料形成的存储卡的厚度会在有或没有所增加的金属层218时都相同。在图13的截面图中示出了这一方面,该截面图是通过图11中的线13-13截取的。尽管图13示出金属层218仅在存储装置250的一部分表面上,但金属层218可以如上所述覆盖装置250的整个表面。这样的实施例示于图14中。
此外,在实施例中,底模板256可以具有将底模板分隔成与在衬底面板240上具有的行数相同的行数的壁。在这样的实施例中,分隔壁以及底模板256的外边界壁可以是倾斜的。在这样的实施例中,金属层转印组件210可以提供于模板256的底部以及模板256的倾斜壁上。结果,在利用模塑料填充并如上所述固化时,可以在模塑料260的平坦顶表面上以及模塑料260的倾斜侧面上提供金属层218。这样的实施例示于例如图15中。
图16-21示出了用于将金属层转印组件210接地的另一实施例。图16-21的示例包括衬底248、衬底上的一对存储器裸芯242和接触焊垫。为了清晰起见省略了控制器裸芯244和丝焊。在本实施例中,可以将接地夹280表面安装到形成于衬底248上的接地焊垫或焊盘282(在其他实施例中,可以在安装存储器裸芯242之前对接地夹280进行表面安装)。如图17所示,可以经由一个或多个通路284将接地焊垫282耦合到衬底248之内的地平面288。接着可以将地平面288焊接或以其他方式连接到存储装置250耦合的印刷电路板或主机装置的地平面。
接地夹280可以由导电的柔性材料形成,例如铝、铍铜合金或其组合。也可以设想使用其他材料。接地夹280的上部可以包括如下所述用于在金属层218之内啮合的尖端。
在制造时,如上所述且如图18和19所示,可以倒置包括衬底248、存储器裸芯242、接地夹280和其他部件的衬底面板240并降低到模塑料260中。在顶和底模板会合时,接地夹280啮合金属层218,如图19所示。在顶和底模板进一步运动到一起时,如图20所示接地夹280被压缩。压缩力使接地夹280稳固地啮合抵靠金属层218并在金属层218之内。如上所述,接地夹280啮合金属层的部分可以包括尖端,以在接地夹280压缩时嵌入金属层之内。在如图21所示从模具移除固化的存储装置250时,接地夹280被嵌入模塑料260中,将金属层218电接地到衬底248中的地平面。
图中示出了接地夹280的具体结构,但通常,接地夹280可以是可压缩的弹簧或许多其他结构,其中接地夹在表面安装在衬底248上时,与金属层218具有固体触点,以将金属层218接地。尽管实施例包括单个接地夹280,但在其他实施例中可以有超过一个的接地夹280。在其他实施例中也可以完全省略接地夹280。
在上述实施例中,在封装工艺期间在模塑料260的一个或多个外表面上形成EMI/RFI屏蔽金属层218。然而,在其他实施例中,可以在完成封装工艺之后,在模塑料260的一个或多个外表面上形成EMI/RFI屏蔽层。例如,如图22所示,可以提供一个或多个印刷头290,以在模塑料260的一个或多个表面上印刷导电和/或导热层292。该层例如可以是包括铝、金或其他电或热导体的树脂。可以在从面板240分割存储装置250之前或之后施加该层292。
印刷头290可以通过多种技术沉积层292,例如包括连续和/或按要求滴落(DOD)印刷。可以使用各种其他技术由印刷头290或以其他方式,包括例如丝网印刷和薄膜沉积来沉积层292。在实施例中,该层292可以是固体的连续层。在其他实施例中,可以对该层292进行构图,例如,包括如图12所示的网孔图案。
例如,图10-15的金属层218以及图22的层292在屏蔽电磁和射频辐射方面是有效的,两者都避免了辐射离开存储装置250以及穿透到存储装置250中。层218、292可以此外或替代地充当散热片,用于耗散存储装置250产生的热能。
总之,本技术涉及一种包括衬底的存储装置,该衬底包括接地焊垫;耦合到衬底的一个或多个电子部件;封装一个或多个电子部件的模塑料;形成于模塑料一个或多个表面上的层,该层包括金属;以及与衬底上的接地焊垫以及模塑料上的层接触的接地夹。
在另一个示例中,本技术涉及一种包括衬底的存储装置,该衬底包括接地焊垫;耦合到衬底的一个或多个电子部件;封装一个或多个电子部件的模塑料;形成于模塑料一个或多个表面上的层,该层包括金属;以及形成于模塑料之内并与衬底上的接地焊垫以及模塑料上的层接触的接地夹。
在另一实施例中,本技术涉及一种在存储装置中提供电磁屏蔽和/或散热的方法,包括:(a)在模具之内设置金属层以封装存储装置;(b)在模具之内设置一个或多个存储装置,以封装一个或多个存储装置;(c)在模具之内提供一定量的模塑料以封装一个或多个存储装置,所述模塑料与金属层接触;(d)封装一个或多个存储装置;以及(e)在封装所述一个或多个存储装置的所述步骤(d)期间将所述金属层粘合到模塑料的表面。
为了说明和例示的目的,呈现了本发明的前述具体描述。给出了前述发明的详细描述以进行例示和描述。所作描述无意于穷举或将本发明限制到公开的精确形式。根据以上教导,很多修改和变化是可能的。选择所述实施例是为了最好地解释本发明的原理及其实际应用,由此使本领域的其他技术人员能够最好地利用各实施例中的以及具有适于所设想特定应用的各种修改的本发明。本发明的范围意在由所附权利要求限定。
Claims (23)
1.一种存储装置,包括:
包括接地焊垫的衬底;
耦合到所述衬底的一个或多个电子部件;
封装所述一个或多个电子部件的模塑料;
形成于所述模塑料的一个或多个表面上的层,所述层包括金属;以及
与所述衬底上的所述接地焊垫以及所述模塑料上的所述层接触的接地夹,所述接地夹包括弹簧结构,所述接地夹在所述衬底和包括所述层的所述模塑料的表面之间被压缩,以确保所述衬底和在所述模塑料的表面上的所述层之间的接触。
2.根据权利要求1所述的装置,其中所述模塑料的一个或多个表面上的所述层是用于通过反射和/或吸收电磁和/或射频辐射来屏蔽电磁和/或射频辐射的层。
3.根据权利要求1所述的装置,其中所述模塑料的一个或多个表面上的所述层是用于散发所述存储装置内产生的热的金属层。
4.根据权利要求1所述的装置,其中所述层来自金属层转印组件。
5.根据权利要求4所述的装置,其中所述金属层转印组件是传热箔。
6.根据权利要求4所述的装置,其中所述金属层转印组件是模具内卷箔。
7.根据权利要求4所述的装置,其中所述层是与固化所述模塑料同时从所述金属层转印组件转印的。
8.根据权利要求1所述的装置,其中所述层包括来自墨喷式打印机的墨滴。
9.根据权利要求1所述的装置,其中所述层是固体连续层。
10.根据权利要求1所述的装置,其中所述层具有网孔图案。
11.一种存储装置,包括:
包括接地焊垫的衬底;
耦合到所述衬底的一个或多个电子部件;
封装所述一个或多个电子部件的模塑料;
形成于所述模塑料的一个或多个表面上的层,所述层包括金属;以及
形成于所述模塑料内并与所述衬底上的所述接地焊垫以及所述模塑料上的所述层接触的接地夹,其中所述接地夹包括在所述模塑料内被压缩的可压缩弹簧。
12.根据权利要求11所述的装置,其中所述模塑料的一个或多个表面上的所述层屏蔽电磁和/或射频辐射并耗散来自所述存储装置内的热量。
13.根据权利要求11所述的装置,其中所述层是固体连续层。
14.根据权利要求11所述的装置,其中所述层具有网孔图案。
15.一种在存储装置中提供电磁屏蔽和/或散热的方法,包括:
(a)在模具内设置金属层以封装存储装置;
(b)在所述模具内设置一个或多个存储装置,以封装所述一个或多个存储装置,所述一个或多个存储装置包括具有接地焊垫的衬底;
(c)在所述模具内提供一定量的模塑料以封装所述一个或多个存储装置,所述模塑料与所述金属层接触;
(d)将接地夹安装到所述接地焊垫,所述接地夹是可压缩弹簧,并封装所述一个或多个存储装置;以及
(e)在封装所述一个或多个存储装置的步骤(d)期间将所述金属层粘合到模塑料的表面。
16.根据权利要求15所述的方法,其中所述步骤(d)包括利用压制成型工艺封装所述一个或多个存储装置。
17.根据权利要求15所述的方法,其中步骤(d)和(e)包括向所述模塑料和金属层施加热,以固化所述模塑料,并在完成所述模塑料的固化之前将所述金属层交联到所述模塑料。
18.根据权利要求15所述的方法,所述方法还包括步骤(f):将所述金属层接地到所述接地焊垫。
19.根据权利要求18所述的方法,其中所述步骤(f)包括在所述步骤(d)中封装所述接地夹的步骤,所述接地夹的一部分接触所述金属层。
20.根据权利要求19所述的方法,其中在步骤(d)的封装期间使所述接地夹压缩抵靠所述金属层。
21.根据权利要求15所述的方法,其中所述步骤(a)包括在所述模具中设置金属层转印组件的步骤。
22.根据权利要求15所述的方法,其中所述步骤(a)包括在所述模具中设置具有固体连续表面的金属层的步骤。
23.根据权利要求15所述的方法,其中所述步骤(a)包括在所述模具中设置具有带开口的图案的金属层的步骤。
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