CN102339763B - 装配集成电路器件的方法 - Google Patents
装配集成电路器件的方法 Download PDFInfo
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- CN102339763B CN102339763B CN201010236800.5A CN201010236800A CN102339763B CN 102339763 B CN102339763 B CN 102339763B CN 201010236800 A CN201010236800 A CN 201010236800A CN 102339763 B CN102339763 B CN 102339763B
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Abstract
本发明涉及一种装配集成电路(IC)器件的方法,包括以下步骤:提供引线框或衬底;将半导体管芯连附至引线框或衬底;以及电耦合管芯至引线框或衬底。该方法还包括:使用第一密封件密封管芯;以及使用第二密封件密封第一密封件,其中第二密封件包括提供电磁屏蔽的材料。
Description
技术领域
本发明涉及集成电路(IC)器件,以及具体地涉及保护IC器件不受包括电磁干扰(EMI)或射频干扰(RFI)的外部环境影响的方法。
背景技术
诸如磁性随机存取存储器(MRAM)的集成电路器件在存在除了施加的写场之外的杂散或外部施加的电磁场时可能会出现错误。这样的杂散场可以来自于包括诸如计算机、显示器等的电子装置的各种源,并且可以具有足够的幅值从而在即使没有写场的情况下转换一个或多个存储单元的逻辑状态。
通常通过使用环氧树脂材料密封或在该器件周围转印模塑热塑性树脂来保护集成电路器件不受外部环境的影响。然而,环氧树脂或塑料密封不能提供对于诸如EMI或RFI的辐射的有效屏蔽。
一些传统的屏蔽系统使用导电金属壳来围绕要被屏蔽的电路。其他系统使用磁性箔使器件与磁场屏蔽。然而,所有已知的解决方案都具有某些缺点。例如,使用导电金属壳增加了包装的整体尺寸,并且需要额外的焊接工艺来将该壳附着至该器件,而额外的焊接工艺产生的热可能会损害该器件。另一方面,使用磁性箔导致严重的界面剥离问题,特别是当在覆层结构中使用双箔时更是如此。
因此,需要一种成本有效的部件级屏蔽处理,其能够被用在具有任何半导体管芯尺寸的各种电路装置中。
附图说明
参考附图描述本发明的优选实施例,其中:
图1A至1F示出了根据本发明的一个实施例的在切单之前的在装配的不同阶段的IC器件的放大横截面视图;
图2D至2F示出了根据本发明的另一实施例的IC器件的放大横截面视图;
图3是示出了根据本发明的实施例的装配IC器件的方法的流程图;
图4A至4H示出了根据本发明的又一实施例的在切单之前的在装配的不同阶段的IC器件的放大横截面视图;
图5F至5H示出了根据本发明的另一实施例的IC器件的放大横截面视图;
图6是示出了根据本发明的实施例的装配IC器件的另一方法的流程图;
图7A至7F示出了根据本发明的另一实施例的切单之前的在装配的不同阶段的IC器件的放大横截面视图;
图8D至8F示出了根据本发明的另一实施例的IC器件的放大横截面视图;
图9是示出了根据本发明的实施例的装配IC器件的方法的流程图;
图10A至10F示出了根据本发明的另一实施例的切单之前的装配的不同阶段的IC器件的放大横截面视图;
图11D至11F示出了根据本发明的另一实施例的IC器件的放大横截面视图;以及
图12是示出了根据本发明的又一实施例的装配IC器件的方法的流程图。
具体实施方式
根据本发明的一个方面,提供了一种形成集成电路(IC)器件的方法,包括以下步骤:(i)提供引线框或衬底板;(ii)将半导体管芯连附至引线框或衬底板;(iii)电耦合半导体管芯至引线框或衬底板;(iv)使用第一密封件密封半导体管芯;以及(v)使用第二密封件密封第一密封件,其中所述第二密封件包括提供至少电磁屏蔽功能的材料。
优选地,第一密封件不提供磁屏蔽功能。第一密封件可以包括模塑化合物,例如Hitachi9200HF10M化合物或SumitomoG700化合物。可以通过MAP模塑处理或可选地通过包括用于每个模盖的单个腔的模具应用第一密封件。
第二密封件可以包括用于为IC器件提供电屏蔽的导体材料和/或金属微粒。第二密封件可以包括用于为IC器件提供磁屏蔽的非导磁微粒。可以通过MAP模塑处理或可选地通过包括用于每个模盖的单个腔的模具应用第二密封件。此外,第二密封件应该至少覆盖第一密封件的顶表面和两个侧表面。
衬底可以包括印刷电路板(PCB)。电耦合至引线框或衬底的步骤可以通过线接合来实现。可选地,电耦合至引线框或衬底的步骤可以通过倒装芯片处理来实现。
根据本发明的另一方面,提供了一种包括引线框或衬底板的集成电路(IC)器件;半导体管芯连附并电耦合至引线框或衬底板;第一密封件应用在半导体管芯上;以及第二密封件应用在第一密封件上。第二密封件覆盖第一密封件的顶表面和两个侧面。此外,第二密封件包括提供电磁屏蔽的材料。
现在参考图1A,衬底或引线框板10代表切单之前的条带中的一个板或这样的板的阵列(未示出)。板10可以包括双马来酰亚胺三嗪树脂(BT)衬底。BT衬底适于球栅阵列(BGA)产品。可选地,板10可以包括金属衬底,例如合金42或镀铜、镀铝、镀塑等。镀覆的材料可以包括铜、银或多层镀层,例如镍-钯和金。板10可以被配置为符合标准IC封装装配工具。
如图1A中所示,例如高导电性环氧材料的粘性浆料层11被应用至板10上的某一位置,其被称为标志或管芯连附盘。在从半导体晶片上被切下后,如图1B中所示,使用本领域已知的拾取和放置工具将半导体管芯12放置在粘性浆料11的相应层上。粘性浆料11随后如本领域中已知的那样被固化。
粘性浆料11固化之后,如图1C中所示,通过导线13将半导体管芯12电耦合至板10上的引线接头或衬底垫(未示出)。导线13由诸如铝或金的导电材料形成。在一个实施例中,导线13使用可商业获得的引线接合设备自动点焊至引线接头。
在导线13接合至管芯12之后,执行第一或主模塑密封处理,以在管芯12和导线13上形成模盖或密封件14,如图1D中所示。主密封处理可以包括通过模塑设备(例如转印模塑装置)执行的MAP(模塑阵列封装)模塑处理。
密封件14优选地包括不提供电磁屏蔽的合成材料。密封件14可以包括如下的材料,包括环氧树脂、苯酚硬化剂、二氧化硅、催化剂、色素和脱模剂。在期望更高的导热性时,代替硅石,可以使用氧化硅作为填充剂。例如,密封件14可以包括Hitachi9200HF10M化合物或SumitomoG700化合物,两者都是可商业获得的。
在主模塑密封处理完成之后,第二模塑密封处理被执行以在第一密封件14上形成模盖或第二密封件15,如图1E中所示。第二密封件15包括提供至少电磁屏蔽功能的合成材料。
第二密封件15可以包括诸如导电/金属微粒的添加剂,用于为该器件提供电磁屏蔽。后者可以提供电屏蔽以阻挡电磁场。可选地或附加地,第二密封件15可以包括非导磁微粒,例如钙钛矿或铁酸锌(zincferrite)。后者可以通过将磁场吸收至微粒从而为被屏蔽体积周围的磁场线提供路径,由此实现磁屏蔽。
可以通过如上所述的传统的模塑设备(例如MAP)执行第二密封处理。在BGA(球栅阵列)类型器件的情况下,在第二密封处理之后可以进行焊球连附处理,如图1F中所示。在焊球连附处理中,焊球16连附到衬底的底表面,然后,焊球16使得该器件能够被连接到印刷电路板(PCB)。连接处理可以在回流炉中执行或者通过使得焊球16熔化的红外线加热器执行。
第二密封处理之后,使用锯切单或本领域已知的类似技术使各个器件被切单或与模塑阵列组件分开。对于BGA类型的器件,焊球16可以在切单处理之前或之后被连附。
在一些实施例中,可以如图2D至2F中所示地修改图1D至1F中示出的第一和第二模塑密封处理。图2D中示出的处理类似于图1D中示出的处理,不同之处在于,第一密封件17是通过传统模具产生的,其使用了用于每个器件的单个腔。
图2E中示出的处理还类似于图1E中示出的处理,不同之处在于,第二密封件18是通过MAP处理或包括用于器件的单个腔的模具产生的。此外,第二密封件18覆盖第一密封件17的顶表面和两个侧表面,以及第二密封件的侧面接触板10的顶部。
图2F示出了器件上的可选BGA连附处理,对应于结合图1F描述的处理,利用各个腔模塑该器件的第一密封件。
图3中示出了与图1A至1F(或图1A至1C和2D至2F)中示出的处理相关的流程图。图3中的步骤30对应于参考图1A描述的浆料分配步骤。步骤31对应于参考图1B描述的管芯接合步骤,以及步骤32对应于参考图1C描述的线接合步骤。步骤33对应于参考图1D(或图2D)描述的第一或主模塑密封处理,以及步骤34对应于参考图1E(或图2E)描述的第二模塑密封处理。步骤35对应于参考图1F(或图2F)描述的可选的BGA连附处理,以及步骤36对应于也是参考图1F(或图2F)描述的切单步骤。再一次地,应该注意对于BGA器件,焊球可以在切单步骤之前或之后被连附。
现在参考图4A,衬底或引线框板40表示切单之前的条带中的一个板或这样的板的阵列(未示出)。板40在结构和组分上可以类似于上述板10。
如图4A中所示,第一层粘性浆料41应用于板40上的管芯连附盘。电磁屏蔽箔层42以任何适当的形式和通过任何适当的方式被应用于该粘性浆料层41。第二层粘性浆料43被应用于屏蔽箔42,如图4C所示。
如图4D中所示,使用如上所述的拾取和放置工具将半导体管芯44相应地放置在第二层粘性浆料43上。粘性浆料固化之后,如图4E中所示,使用如上所述的可商业获得的线接合设备,通过导线45将每个半导体管芯44电耦合至板40上的引线接头(未示出)。
在导线45接合到管芯44之后,执行第一模塑密封处理以在管芯44和导线45上形成第一模盖或密封件46,如图4F中所示。第一密封件46在组分上类似于上述的第一密封件14之处在于优选地不提供电磁屏蔽功能。
在主模塑密封处理完成之后,执行第二模塑密封处理以在第一密封件46上形成第二模盖或密封件47,如图4G中所示。第二密封件47在组分上可以类似于上述的第二密封件15,其优选地提供至少电磁屏蔽功能。
在BGA产品的情况下,在第二模塑密封处理之后可以进行焊球连附处理,如图4H所示。
在第二模塑密封处理之后,通过将器件彼此切单而形成各个器件。
在一些实施例中,图4F至4H中示出的主模塑密封处理和第二模塑密封处理可以如图5F至5H中所示地被更改。图5F中示出的处理类似于图4F中示出的处理,不同之处在于通过使用用于每个器件的单个腔利用传统模具产生第一密封件48。
图5G中示出的处理还类似于图4G中示出的处理,不同之处在于通过MAP处理或通过包括用于每个模盖的单个腔的模具来形成第二密封件49。
图5H示出了产品上的可选BGA连附处理,与参考图4H描述的处理相对应的,利用单个腔来模塑该产品的第一密封件。
图6中示出了与图4A至4H(或图4A至4E和图5F至5H)中示出的处理相关的流程图。图6中的步骤60对应于参考图4A描述的第一浆料的分配步骤。步骤61对应于参考图4B描述的磁箔放置,以及步骤62对应于参考图4C描述的第二浆料分配步骤。步骤63对应于参考图4D描述的管芯接合步骤,步骤64对应于参考图4E描述的线接合步骤。步骤65对应于参考图4F(或图5F)描述的第一或主模塑密封处理,步骤66对应于参考图4G(或图5G)描述的第二模塑密封处理。步骤67对应于参考图4H(或图5H)描述的BGA连附处理,步骤68对应于也是参考图4H(或图5H)描述的切单步骤。
现在参考图7A,衬底或引线框板70表示切单之前的条带中的一个板或这样的板的阵列(未示出)。板70可以在结构和组分上类似于上述的板10和40。
如图7A中所示,第一层粘性浆料71应用于板70上的管芯连附盘。使用如上所述的拾取和放置工具,将在其底层处具有磁性金属73的半导体管芯72放置在粘性浆料71的相应层上。粘性浆料71固化之后,如图7C中所示,使用上述的可商业获得的线接合设备,通过导线74将每个半导体管芯72电耦合到板70上的引线接头(未示出)。
在导线74接合到管芯72之后,如图7D中所示,进行主模塑密封处理以在管芯72和导线74上形成第一模盖或密封件75。第一密封件75在组分上类似于上述的第一密封件14和46之处在于其优选地不提供电磁屏蔽功能。
在完成主模塑密封处理之后,如图7E中所示,执行第二模塑密封处理以在第一密封件75上形成第二模盖或密封件76。第二密封件76在组分上类似于上述的第二密封件15或47之处在于其至少提供电磁屏蔽功能。
在BGA产品的情况下,如图7F中所示,在第二模塑密封处理之后,可以进行焊球连附处理。
在第二模塑密封处理(以及在BGA产品的情况下的焊球连附处理)之后,各个器件被切单或与模塑阵列组件分开。
在一些实施例中,如图8D至8F中所示,可以改变图7D至7F中示出的主模塑密封处理和第二模塑密封处理。图8D中示出的处理类似于图7D中示出的处理,不同之处在于第一密封件77是通过用于每个模盖的单个腔形式的传统模具产生的。
图8E中示出的处理还类似于图7E中的处理,不同之处在于第二密封件78可以是通过MAP处理或通过包括用于每个模盖的单个腔的模具产生的。
图8F示出了产品上的可选BGA连附处理,与参考图7F描述的处理相对应的,利用单个腔来模塑该产品的第一密封件。
图9中示出了与图7A至7F(或图7A至7C和图8D至8F)中示出的处理相关的流程图。图9中的步骤90对应于参考图7A描述的第一浆料分配步骤。步骤91对应于参考图7B描述的管芯接合步骤,以及步骤92对应于参考图7C描述的线接合步骤。步骤93对应于参考图7D(或图8D)描述的第一或主模塑密封处理,以及步骤94对应于参考图7E(或图8E)描述的第二模塑密封处理。步骤95对应于参考图7F(或图8F)描述的BGA焊球连附处理,以及步骤96对应于也是参考图7F(或图8F)描述的切单步骤。
参考图10A,衬底或引线框板100表示切单之前的条带中的一个板或这样的板的阵列(未示出)。板100可以在组分上类似于上述的板10和40。
如图10B中所示,在其有效表面上具有焊球101的半导体管芯102被放置为活性表面向下在板100上。该组件被放置在回流炉中或暴露于红外加热,这使得焊球熔化并焊接至引线接头。
为了解决机械应力问题,在管芯接合和焊球连附处理之后,进行底部填充处理,如图10C中所示,其中底部填充材料103被注入在管芯102和板100之间。底部填充材料103可以是现有技术中已知的环氧混合物。在底部填充处理之后对底部填充材料进行固化。
在完成底部填充处理之后,如图10D中所示,执行主模塑密封处理以在管芯102上形成第一模盖或密封件104。第一密封件104可以在组分上类似于如上所述的第一密封件14、46和75,类似之处在于其优选地不提供电磁屏蔽功能。
在主模塑密封处理完成之后,如图10E中所示,执行第二模塑密封处理以在第一密封件104上形成第二模盖或密封件105。第二密封件105可以在组分上类似于上述的密封件15、47或76,类似之处在于其至少提供电磁屏蔽功能。
在BGA产品的情况下,在第二模塑密封处理之后,可以进行焊球连附处理,如图10F所示。
在第二模塑密封处理之后,各个器件被切单或与模制阵列组件分开。
在一些实施例中,图10D至10F中示出的主模塑密封处理和第二模塑密封处理可以如图11D至11F中所示的被更改。图11D中示出的处理类似于图10D中示出的处理,不同之处在于通过用于每个模盖的单个腔的形式以传统模具产生第一密封件106。
图11E中示出的处理还类似于图10E中示出的处理,不同之处在于第二密封件107可以是通过MAP处理或通过包括用于每个模盖的单个腔的模具产生的。
图11F示出了产品上的可选BGA连附处理,与参考图10F描述的处理相对应的,利用单个腔来模塑该产品的第一密封件。
图12中示出了与图10A至10F(或图10A至10C和图11D至11F)中示出的处理相关的流程图。图12中的步骤120对应于参考图10A描述的焊剂分配。步骤121对应于参考图10B描述的倒装芯片接合以及回流步骤,以及步骤122对应于参考图10C描述的底部填充和固化步骤。步骤123对应于参考图10D(或图11D)描述的第一或主模塑密封处理,以及步骤124对应于参考图10E(或图11E)描述的第二模塑密封处理。步骤125对应于参考图10F(或图11F)描述的BGA连附处理,以及步骤126对应于也参考图10F(或图11F)描述的切单步骤。
最后,应该理解在不背离本发明的精神或范围的情况下,各种替换、修改和/或增加可以被引入至上述部件的结构和布置中。
Claims (6)
1.一种装配集成电路IC器件的方法,包括以下步骤:
提供引线框或衬底板;
将半导体管芯连附至所述引线框或衬底板,
屏蔽步骤,将使所述半导体管芯的底表面与所述引线框或衬底板屏蔽开,其中所述屏蔽步骤包括在所述半导体管芯的底表面与所述引线框或衬底板之间布置金属箔;
电耦合所述半导体管芯至所述引线框或衬底板;
使用第一密封件密封所述半导体管芯,其中所述第一密封件至少覆盖所述半导体管芯的顶部和两个侧表面;以及
使用第二密封件密封所述第一密封件,其中所述第二密封件包括提供电磁屏蔽功能的材料,以及其中所述第二密封件至少覆盖所述第一密封件的顶部和两个侧表面。
2.根据权利要求1所述的装配集成电路IC器件的方法,其中所述第二密封件包括导体材料和金属微粒,用于为所述IC器件提供电屏蔽。
3.根据权利要求1所述的装配集成电路IC器件的方法,其中所述第二密封件包括非导磁微粒,用于为所述IC器件提供磁屏蔽。
4.根据权利要求1所述的装配集成电路IC器件的方法,其中所述第一密封件不提供磁屏蔽功能。
5.根据权利要求1所述的装配集成电路IC器件的方法,其中所述屏蔽步骤包括在所述管芯连附步骤之前在所述半导体管芯上进行背面金属化处理。
6.一种集成电路IC器件,包括:
引线框或衬底板;
半导体管芯,连附并电耦合至所述引线框或衬底板;
屏蔽件,布置在所述半导体管芯的底表面与所述引线框或衬底板之间,其中所述屏蔽件包括磁性箔;
第一密封件,至少覆盖所述半导体管芯的顶部和两个侧表面;以及
第二密封件,至少覆盖所述第一密封件的顶部和两个侧表面,其中所述第二密封件包括提供电磁屏蔽功能的材料。
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US8536684B2 (en) | 2013-09-17 |
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