CN103700706A - 薄膜晶体管和阵列基板及其各自制备方法、以及显示装置 - Google Patents
薄膜晶体管和阵列基板及其各自制备方法、以及显示装置 Download PDFInfo
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Abstract
本发明提供一种低温多晶硅薄膜晶体管及其制备方法、阵列基板及其制备方法和显示装置,属于显示技术领域,其可解决现有的低温多晶硅薄膜晶体管结构复杂且制作步骤繁琐的问题。本发明的低温多晶硅薄膜晶体管,包括:设置在基底上的有源层,与有源层连接的源极和漏极,所述有源层包括源极接触区、漏极接触区,以及设于源极接触区和漏极接触区之间的半导体区,所述源极接触区和所述漏极接触区均能够导电,且所述源极接触区和所述漏极接触区均包括半导体基体和分布在所述半导体基体内的离子,所述源极直接覆盖所述源极接触区,所述漏极直接覆盖漏极接触区。
Description
技术领域
本发明属于显示技术领域,具体涉及一种低温多晶硅薄膜晶体管及其制备方法,包括所述低温多晶硅薄膜晶体管的阵列基板及该阵列基板的制备方法,和包括该阵列基板的显示装置。
背景技术
在显示技术领域,薄膜晶体管一般用作开关元件,以控制像素单元的工作,或是用作驱动元件来驱动像素单元。薄膜晶体管按照其硅薄膜性质通常可分为非晶硅(a-Si)与多晶硅(poly-Si)两种。与非晶硅薄膜晶体管相比较,多晶硅薄膜晶体管有更高的电子迁移率,更佳的液晶特性以及较少的漏电流。因此利用多晶硅薄膜晶体管制作的显示器会有较高的分辨率以及较快的反应速度。低温多晶硅技术已逐渐取代非晶硅技术成为薄膜晶体管研发的主流。
如图1所示,一种阵列基板,其上包括低温多晶硅薄膜晶体管,所述低温多晶硅薄膜晶体管包括依次设置在基底101上的缓冲层102、有源层103、栅极绝缘层104、栅极105、平坦化层106、源极1071和漏极1072,其中,源极1071和漏极1072分别通过贯穿栅极绝缘层104和平坦化层106的接触过孔与有源层103连接。需要说明的是,所述有源层103分为与源极1071接触的源极接触区,与漏极1072接触的漏极接触区,以及夹在源极接触区与漏极接触区之间的半导体沟道区,通过对有源层103的源极接触区与漏极接触区进行离子注入,使得有源层的源极接触区与漏极接触区变为导体。当然该阵列基板上还设置有存储电容,所述存储电容的第一电极108可以与有源层103同步形成,第二电极109可以与栅极105同步形成。
发明人发现现有技术中至少存在如下问题:多晶硅薄膜晶体管的工艺有着许多缺点,例如合格率较差、工艺复杂、成本较高等。尤其是离子注入工艺,注入离子的能量极易引起光刻胶的固化,导致光刻胶残留,影响下步工序,并且常用的多晶硅薄膜晶体管的掩膜板多达9道,严重降低了工业化生产产能,增加了成本。
发明内容
本发明所要解决的技术问题包括,针对现有的低温多晶硅薄膜晶体管存在的上述的问题,提供一种结构简单且制备容易的低温多晶硅薄膜晶体管及其制备方法、阵列基板及其制备方法和显示装置。
解决本发明技术问题所采用的技术方案是一种低温多晶硅薄膜晶体管,包括:设置在基底上的有源层,与有源层连接的源极和漏极,所述有源层包括源极接触区、漏极接触区,以及设于源极接触区和漏极接触区之间的半导体区,其中,所述源极接触区和所述漏极接触区均能够导电,且所述源极接触区和所述漏极接触区均包括半导体基体和分布在所述半导体基体内的离子,所述源极直接覆盖所述源极接触区,所述漏极直接覆盖漏极接触区。
本发明的低温多晶硅薄膜晶体管的源极直接覆盖有源层的源极接触区和漏极直接覆盖有源层的漏极接触区,与现有的低温多晶硅薄膜晶体管相比较,无需通过刻蚀接触过孔使得薄膜晶体管的源极和漏极与有源层连接,进而可以节约制造成本、提高生产效率,同时使得薄膜晶体管的结构更加简单。
优选的是,所述低温多晶硅薄膜晶体管还包括:设置在基底与有源层之间的缓冲层。
优选的是,所述低温多晶硅薄膜晶体管还包括:栅极绝缘层和栅极,所述栅极通过所述栅极绝缘层与所述源极、漏极、有源层绝缘设置。
解决本发明技术问题所采用的技术方案是一种低温多晶硅薄膜晶体管的制备方法,其包括:
在基底上形成多晶硅半导体薄膜;
在完成上述步骤的基底上,通过构图工艺形成包括有源层的图形,该有源层包括源极接触区、漏极接触区,以及设于源极接触区和漏极接触区之间的半导体区,所述源极接触区和所述漏极接触区均能够导电,且所述源极接触区和所述漏极接触区均包括半导体基体和分布在所述半导体基体内的离子;
完成上述步骤的基底上,形成包括薄膜晶体管源极和漏极的图形,其中,所述源极直接覆盖所述源极接触区,所述漏极直接覆盖漏极接触区。
本发明的制备方法缩短了工艺时间,提高了生产效率,进而节约了生产成本。
优选的是,所述形成包括有源层的图形的步骤包括:
在形成有所述多晶硅半导体薄膜的基底上,涂覆第一厚度的光刻胶,并对所述光刻胶进行曝光、显影,以及形成包括有源层的图形,其中,所述有源层包括源极接触区、漏极接触区,以及设于源极接触区和漏极接触区的半导体区,且在所述有源层的源极接触区和漏极接触区的光刻胶厚度为第二厚度,在所述有源层的半导体区上光刻胶厚度为第一厚度;
对完成上述步骤的基底进行灰化,去除第二厚度的光刻胶,形成所述有源层的源极接触区和漏极接触区上方无光刻胶覆盖,有源层的半导体区上方剩余的光刻胶厚度为第三厚度;
对完成上述步骤的基底进行离子注入,使得有源层的源极接触区和漏极接触区均变为导体区。
优选的是,所述形成包括源极和漏极的图形具体包括:
在形成有源层的源极接触区和漏极接触区的基底上涂覆源漏金属薄膜,通过离地剥离工艺去除有源层的半导体区上方剩余的第三厚度的光刻胶,以及该光刻胶上方的源漏金属薄膜,形成包括薄膜晶体管源极和漏极的图形。
优选的是,所述形成多晶硅半导体薄膜之前还包括:
在基底上形成缓冲层。
优选的是,所述形成薄膜晶体管的源极和漏极之后还包括:
形成栅极绝缘层;
在完成上述步骤的基底上,通过构图工艺形成包括薄膜晶体管栅极的图形。
优选的是,所述在基底上形成多晶硅半导体薄膜具体包括:
在基底上形成非晶硅半导体薄膜;
通过退火工艺,将非晶硅半导体薄膜去氢处理;
通过准分子激光退火工艺,使去氢后的非晶硅半导体薄膜再结晶,以形成多晶硅半导体薄膜。
解决本发明技术问题所采用的技术方案是一种阵列基板,其包括上述薄膜晶体管。
由于本发明的阵列基板包括上述薄膜晶体管,故其结构简单。
优选的是,所述阵列基板还包括存储电容,所述存储电容包括第一电极和第二电极。
进一步优选的是,所述存储电容的第一电极与所述薄膜晶体管的有源层中的源极接触区和漏极接触区同层同材质,所述存储电容的第二电极与所述薄膜晶体管的栅极同层同材质。
解决本发明技术问题所采用的技术方案是一种阵列基板的制备方法,该阵列基板包括薄膜晶体管,其中薄膜晶体管是通过上述方法制备的。
优选的是,所述阵列基板还包括存储电容,所述存储电容的第一电极与薄膜晶体管的有源层中的源极接触区和漏极接触区同步形成,所述存储电容的第二电极与所述薄膜晶体管的栅极同步形成。
解决本发明技术问题所采用的技术方案是一种显示装置,其包括上述阵列基板。
由于本发明的显示装置包括上述阵列基板,故其结构简单,且成本相对较低。
附图说明
图1为现有的低温多晶硅薄膜晶体管的结构图;
图2为本发明的实施例1的低温多晶硅薄膜晶体管的结构图;
图3为本发明的实施例2的低温多晶硅薄膜晶体管的制作方法的流程图;
图4为本发明的实施例2的低温多晶硅薄膜晶体管的制作方法的步骤二的示意图;以及,
图5本发明的实施例3的阵列基板的结构示意图。
其中附图标记为:101、基底;102、缓冲层;103、有源层;104、栅极绝缘层;105、栅极;106、平坦化层;107、源漏金属薄膜;1071、源极;1072、漏极;108、存储电容的第一电极;109、存储电容的第二电极;110、第一厚度的光刻胶;111、第二厚度的光刻胶;112、第三厚度的光刻胶;113、钝化层;114、像素电极。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案,下面结合附图和具体实施方式对本发明作进一步详细描述。
实施例1:
如图2所示,本实施例提供一种低温多晶硅薄膜晶体管,其包括:设置在基底101上的有源层103,与有源层103连接的源极1071和漏极1072,所述有源层103包括源极接触区、漏极接触区,以及设于源极接触区和漏极接触区之间的半导体区,其中,所述源极接触区和所述漏极接触区均能够导电,且所述源极接触区和所述漏极接触区均包括半导体基体和分布在所述半导体基体内的离子,所述源极1071直接覆盖所述源极接触区,所述漏极1072直接覆盖漏极接触区。
本实施例所提供的低温多晶硅薄膜晶体管的源极1071直接覆盖有源层103的源极接触区和漏极1072直接覆盖有源层103的漏极接触区,与现有的低温多晶硅薄膜晶体管相比较无需通过刻蚀接触过孔分别使得薄膜晶体管的源极1071和漏极1072与有源层103连接,进而可以节约制造成本、提高生产效率,同时使得薄膜晶体管的结构更加简单。
本领域技术人员容易理解的是,本实施例提供的为低温多晶硅薄膜晶体管,因此有源层103的半导体区为低温多晶硅材料,源极接触区和漏极接触区的半导体基体均为低温多晶硅材料。在本发明中,对分布在源极接触区的半导体基体中的离子以及分布在漏极接触区的半导体基体中的离子并没有特殊规定,只要可以使源极接触区和漏极接触区导电即可。例如,所述离子可以为硼离子。
本实施例的低温多晶硅薄膜晶体管,优选地,在基底101与有源层103之间还设置有缓冲层102,所述缓冲层102一般为绝缘物质组成。由于在制备低温多晶硅薄膜晶体管的有源层时,需要利用激光退火使非晶硅转变为多晶硅,较高的激光退火温度会对基底(玻璃基底)产生影响,所以设置缓冲层是很有必要的。
当然上述薄膜晶体管还包括,栅极绝缘层104以及栅极105,所述栅极绝缘层104将栅极105与所述源极1071、漏极1072、有源层103隔开绝缘设置。
实施例2:
结合图3、4所示,本实施例提供一种低温多晶硅薄膜晶体管的制备方法,其具体包括如下步骤:
步骤一、在基底101上通过等离子体增强化学气相沉积法(PECVD;Plasma Enhanced Chemical Vapor Deposition)等工艺形成一层缓冲层102。
其中,缓冲层102的材料为可以为硅的氧化物(SiOx)、硅的氮化物(SiNx)、铪的氧化物(HfOx)、硅的氮氧化物(SiON)、铝的氧化物(AlOx)等中的一种或它们中两种材料组成的多层复合膜,对应的反应气体可以为SiH4、NH3、N2的混合气体或SiH2Cl2、NH3、N2的混合气体,所述缓冲层102的厚度在之间,根据实际情况具体设定厚度。
步骤二、在完成上述步骤的基底101上,通过构图工艺形成包括有源层103的图形,该有源层103包括源极接触区、漏极接触区,以及设于源极接触区和漏极接触区之间的半导体区,所述源极接触区和所述漏极接触区均能够导电,且所述源极接触区和所述漏极接触区均包括半导体基体和分布在所述半导体基体内的离子。
如图4所示,其中形成有源层103具体包括:
S1、形成非晶硅(a-Si)半导体薄膜;通过退火工艺,将非晶硅半导体薄膜去氢处理;通过准分子激光退火工艺,使去氢后的非晶硅半导体薄膜再结晶,以形成多晶硅半导体薄膜。非晶硅半导体薄膜的厚度可以在之间,对应的反应气体可以是SiH4、H2的混合气体或者SiH2Cl2、H2的混合气体。
S2、在形成有所述多晶硅半导体薄膜的基底101上,涂覆第一厚度的光刻胶110,并通过灰度掩膜板或者半色调掩膜板对所述光刻胶110进行曝光、显影,形成包括有源层103的图形,其中,所述有源层103包括源极接触区、漏极接触区,以及设于源极接触区和漏极接触区的半导体区,且在所述有源层的源极接触区和漏极接触区的光刻胶厚度为第二厚度111,在所述有源层的半导体区上的光刻胶厚度为第一厚度110;其中,通过灰度掩膜板或者半色调掩膜板曝光工艺为现有的工艺手段,在此不详细描述。
S3、对完成上述步骤的基底101进行灰化,去除第二厚度的光刻胶111,形成所述有源层103的源极接触区和漏极接触区上方无光刻胶覆盖,有源层的半导体区上方剩余的光刻胶厚度为第三厚度112;
S4、对完成上述步骤的基底101进行离子注入,使得有源层103的源极接触区和漏极接触区均变为导体区,其中,进行离子注入工艺,注入的离子为硼离子,反应气体为浓度为10%B2H6,最终形成有源层103的图形。
步骤三、在完成上述步骤的基底101上,采用磁控溅射的方法沉积一层源漏金属薄膜107,并通过构图工艺形成包括薄膜晶体管源极1071和漏极1072的图形,其中,所述源极1071直接覆盖所述源极接触区,所述漏极1072直接覆盖漏极接触区。需要说明的是,采用离地剥离工艺(lift off)工艺可以将有源层103的半导体区上方剩余的第二厚度的光刻胶111与以及该光刻胶111上方的源漏金属薄膜107一同剥离去除,最终形成包括薄膜晶体管源极1071和漏极1072的图形。
其中,源极1071和漏极1072材料可以是钼(Mo)、钼铌合金(MoNb)、铝(Al)、铝钕合金(AlNd)、钛(Ti)和铜(Cu)中的一种或多种材料形成的,优选为Mo、Al或含Mo、Al的合金材料,厚度在之间,根据具体情况具体设定。
步骤四、在完成上述步骤的基底101上,采用热生长、常压化学气相沉积、低压化学气相沉积、等离子辅助体化学气相淀积、溅射等制备方法,形成栅极绝缘层104。
其中,所述栅极绝缘层104的材料可以为硅的氧化物(SiOx)、硅的氮化物(SiNx)、铪的氧化物(HfOx)、硅的氮氧化物(SiON)、铝的氧化物(AlOx)等中的一种或它们中两种材料组成的多层复合膜,厚度在之间,根据具体情况具体设定。
步骤五、在完成上述步骤的基底101上,采用磁控溅射的方法沉积一层栅极金属层薄膜,并通过构图工艺形成包括薄膜晶体管栅极105的图形。
其中,所述栅极105的材料可以为钼(Mo)、钼铌合金(MoNb)、铝(Al)、铝钕合金(AlNd)、钛(Ti)和铜(Cu)中的一种或它们中多种材料形成的单层或多层复合叠层,优选为Mo、Al或含Mo、Al的合金组成的单层或多层复合膜。
本实施例所提供的低温多晶硅薄膜晶体管的制备方法,工艺简单,容易实现,特别是在步骤二的S2中采用灰度掩膜板或者半色调掩膜板对光刻胶曝光显影,减少了工艺中掩膜板的数量,缩短了工艺时间,提高了生产效率。需要说明的是,实施例1中的低温多晶硅薄膜晶体管可以采用本实施例的制备方法制备。
实施例3:
如图5所示,本实施例提供了一种阵列基板,其包括实施例1中所述的薄膜晶体管,存储电容,其中,所述存储电容的第一电极108与所述薄膜晶体管的有源层103同层同材质,所述存储电容的第二电极109与所述薄膜晶体管的栅极105同层同材质。当然,存储电容的第一电极108也可以与源极1071和漏极1072同层同材质。具体形成方法与现有的方法相同,在此不详细描述。
当然实施例的这阵列基板还包括设置在薄膜晶体管栅极105上方的钝化层113,以及钝化层上方的像素电极114,所述像素电极通过贯穿钝化层113以及栅极绝缘层104的接触过孔与薄膜晶体管的漏极1072连接。
由于本实施例的阵列基板包括实施例1所述的薄膜晶体管,故其结构简单,制备方法简便。
实施例4:
本实施例提供了一种阵列基板的制备方法,该阵列基板包括薄膜晶体管,该薄膜晶体管是通过实施例2所述的制备方法制备的,在此不重复赘述了。
当然该阵列基板还包括存储电容,所述存储电容的第一电极108与薄膜晶体管的有源层103中的源极接触区和漏极接触区同步形成,所述存储电容的第二电极109与所述薄膜晶体管的栅极105同步形成。当然,存储电容的第一电极108也可以与源极1071和漏极1072同步形成。该形成方法为本领域技术人员所公知,在此不详细描述。
实施例5:
本实施例提供一种显示装置,其包括实施例3中的阵列基板,该显示装置可以为:手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本实施例的显示装置中具有实施例3中的阵列基板,故其成本低。
当然,本实施例的显示装置中还可以包括其他常规结构,如电源单元、显示驱动单元等。
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。
Claims (15)
1.一种低温多晶硅薄膜晶体管,包括:设置在基底上的有源层,与有源层连接的源极和漏极,所述有源层包括源极接触区、漏极接触区,以及设于源极接触区和漏极接触区之间的半导体区,其特征在于,所述源极接触区和所述漏极接触区均能够导电,且所述源极接触区和所述漏极接触区均包括半导体基体和分布在所述半导体基体内的离子,所述源极直接覆盖所述源极接触区,所述漏极直接覆盖漏极接触区。
2.根据权利要求1所述的低温多晶硅薄膜晶体管,其特征在于,所述低温多晶硅薄膜晶体管还包括:设置在基底与有源层之间的缓冲层。
3.根据权利要求1或2所述的低温多晶硅薄膜晶体管,其特征在于,所述低温多晶硅薄膜晶体管还包括:栅极绝缘层和栅极,所述栅极通过所述栅极绝缘层与所述源极、漏极、有源层绝缘设置。
4.一种低温多晶硅薄膜晶体管的制备方法,其特征在于,包括如下步骤:
在基底上形成多晶硅半导体薄膜;
在完成上述步骤的基底上,通过构图工艺形成包括有源层的图形,该有源层包括源极接触区、漏极接触区,以及设于源极接触区和漏极接触区之间的半导体区,所述源极接触区和所述漏极接触区均能够导电,且所述源极接触区和所述漏极接触区均包括半导体基体和分布在所述半导体基体内的离子;
在完成上述步骤的基底上,形成包括薄膜晶体管源极和漏极的图形,其中,所述源极直接覆盖所述源极接触区,所述漏极直接覆盖漏极接触区。
5.根据权利要求4所述的制备方法,其特征在于,所述形成包括有源层的图形的步骤包括:
在形成有所述多晶硅半导体薄膜的基底上,涂覆第一厚度的光刻胶,并对所述光刻胶进行曝光、显影,以及形成包括有源层的图形,其中,所述有源层包括源极接触区、漏极接触区,以及设于源极接触区和漏极接触区的半导体区,且在所述有源层的源极接触区和漏极接触区的光刻胶厚度为第二厚度,在所述有源层的半导体区上的光刻胶厚度为第一厚度;
对完成上述步骤的基底进行灰化,去除第二厚度的光刻胶,形成所述有源层的源极接触区和漏极接触区上方无光刻胶覆盖,有源层的半导体区上方剩余的光刻胶厚度为第三厚度;
对完成上述步骤的基底进行离子注入,使得有源层的源极接触区和漏极接触区均变为导体区。
6.根据权利要求5所述的低温多晶硅薄膜晶体管的制备方法,其特征在于,所述形成包括源极和漏极的图形具体包括:
在形成有源层的源极接触区和漏极接触区的基底上涂覆源漏金属薄膜,通过离地剥离工艺去除有源层的半导体区上方剩余的第三厚度的光刻胶,以及该光刻胶上方的源漏金属薄膜,形成包括薄膜晶体管源极和漏极的图形。
7.根据权利要求4所述的低温多晶硅薄膜晶体管的制备方法,其特征在于,所述形成多晶硅半导体薄膜之前还包括:
在基底上形成缓冲层。
8.根据权利要求4所述的低温多晶硅薄膜晶体管的制备方法,其特征在于,所述形成薄膜晶体管的源极和漏极之后还包括:
形成栅极绝缘层;
在完成上述步骤的基底上,通过构图工艺形成包括薄膜晶体管栅极的图形。
9.根据权利要求4~8中任意一项所述的低温多晶硅薄膜晶体管的制备方法,其特征在于,所述在基底上形成多晶硅半导体薄膜具体包括:
在基底上形成非晶硅半导体薄膜;
通过退火工艺,将非晶硅半导体薄膜去氢处理;
通过准分子激光退火工艺,使去氢后的非晶硅半导体薄膜再结晶,以形成多晶硅半导体薄膜。
10.一种阵列基板,其特征在于,所述阵列基板包括权利要求1~3中任意一项所述的低温多晶硅薄膜晶体管。
11.根据权利要求10所述的阵列基板,其特征在于,所述阵列基板还包括存储电容,所述存储电容包括第一电极和第二电极。
12.根据权利要求11所述的阵列基板,其特征在于,所述存储电容的第一电极与所述薄膜晶体管的有源层中的源极接触区和漏极接触区同层同材质,所述存储电容的第二电极与所述薄膜晶体管的栅极同层同材质。
13.一种阵列基板的制备方法,其特征在于,所述阵列基板包括薄膜晶体管,所述制备方法包括形成薄膜晶体管的步骤,且该薄膜晶体管是通过权利要求4~9中任意一种方法制备的。
14.根据权利要求13所述的阵列基板的制备方法,其特征在于,所述阵列基板包括存储电容,所述存储电容的第一电极与薄膜晶体管的有源层中的源极接触区和漏极接触区同步形成,所述存储电容的第二电极与所述薄膜晶体管的栅极同步形成。
15.一种显示装置,其特征在于,包括权利要求10~12中任意一项所述的阵列基板。
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