CN101582381A - 薄膜晶体管的制备方法 - Google Patents
薄膜晶体管的制备方法 Download PDFInfo
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- CN101582381A CN101582381A CN200810067162.1A CN200810067162A CN101582381A CN 101582381 A CN101582381 A CN 101582381A CN 200810067162 A CN200810067162 A CN 200810067162A CN 101582381 A CN101582381 A CN 101582381A
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- carbon nanotube
- film transistor
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- carbon
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
- Y10S977/75—Single-walled
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (17)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810067162.1A CN101582381B (zh) | 2008-05-14 | 2008-05-14 | 薄膜晶体管及其阵列的制备方法 |
US12/384,245 US7754526B2 (en) | 2008-05-14 | 2009-04-02 | Method for making thin film transistor |
EP09160164.1A EP2120274B1 (en) | 2008-05-14 | 2009-05-13 | Carbon Nanotube Thin Film Transistor |
JP2009117603A JP5139368B2 (ja) | 2008-05-14 | 2009-05-14 | 薄膜トランジスタの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810067162.1A CN101582381B (zh) | 2008-05-14 | 2008-05-14 | 薄膜晶体管及其阵列的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101582381A true CN101582381A (zh) | 2009-11-18 |
CN101582381B CN101582381B (zh) | 2011-01-26 |
Family
ID=41316568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810067162.1A Active CN101582381B (zh) | 2008-05-14 | 2008-05-14 | 薄膜晶体管及其阵列的制备方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7754526B2 (zh) |
JP (1) | JP5139368B2 (zh) |
CN (1) | CN101582381B (zh) |
Cited By (11)
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CN101908494A (zh) * | 2010-06-12 | 2010-12-08 | 上海大学 | 用于微电子封装的碳纳米管凸点的低温转印方法 |
CN103011133A (zh) * | 2013-01-09 | 2013-04-03 | 华北电力大学 | 一种低成本的碳纳米管阵列的制备方法 |
CN103537293A (zh) * | 2012-07-12 | 2014-01-29 | 北京大学 | 用于制备手性选择性和导电性选择性单壁碳纳米管的催化剂及其制备方法和应用 |
CN103700706A (zh) * | 2013-12-16 | 2014-04-02 | 京东方科技集团股份有限公司 | 薄膜晶体管和阵列基板及其各自制备方法、以及显示装置 |
CN103943458A (zh) * | 2014-03-27 | 2014-07-23 | 北京大学 | 一种去除碳纳米管阵列中金属性碳纳米管的方法 |
CN104112777A (zh) * | 2013-04-16 | 2014-10-22 | 清华大学 | 薄膜晶体管及其制备方法 |
CN105737975A (zh) * | 2016-02-15 | 2016-07-06 | 欧阳征标 | 基于mim高灵敏度spp太赫兹探测器 |
CN107528001A (zh) * | 2017-08-31 | 2017-12-29 | 清华大学 | 一种纳米二极管的制备方法和纳米二极管 |
CN107564910A (zh) * | 2016-07-01 | 2018-01-09 | 清华大学 | 半导体器件 |
CN108023016A (zh) * | 2016-10-31 | 2018-05-11 | 清华大学 | 薄膜晶体管的制备方法 |
CN108365095A (zh) * | 2017-09-30 | 2018-08-03 | 广东聚华印刷显示技术有限公司 | 薄膜晶体管及其制备方法 |
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CN101582450B (zh) * | 2008-05-16 | 2012-03-28 | 清华大学 | 薄膜晶体管 |
US8895950B2 (en) * | 2009-10-23 | 2014-11-25 | Nantero Inc. | Methods for passivating a carbonic nanolayer |
CN102050424B (zh) * | 2009-11-06 | 2013-11-06 | 清华大学 | 一种制备碳纳米管薄膜及薄膜晶体管的方法 |
CN101880035A (zh) | 2010-06-29 | 2010-11-10 | 清华大学 | 碳纳米管结构 |
TWI479547B (zh) * | 2011-05-04 | 2015-04-01 | Univ Nat Cheng Kung | 薄膜電晶體之製備方法及頂閘極式薄膜電晶體 |
US8471249B2 (en) * | 2011-05-10 | 2013-06-25 | International Business Machines Corporation | Carbon field effect transistors having charged monolayers to reduce parasitic resistance |
KR101830782B1 (ko) * | 2011-09-22 | 2018-04-05 | 삼성전자주식회사 | 그래핀을 포함하는 전극 구조체 및 전계효과 트랜지스터 |
KR101920724B1 (ko) | 2012-12-11 | 2018-11-21 | 삼성전자주식회사 | 그래핀을 포함하는 전자 소자 |
WO2016081689A2 (en) * | 2014-11-19 | 2016-05-26 | Vorbeck Materials Corp. | Transfer print circuitry |
US10355206B2 (en) | 2017-02-06 | 2019-07-16 | Nantero, Inc. | Sealed resistive change elements |
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JP5061414B2 (ja) * | 2001-09-27 | 2012-10-31 | 東レ株式会社 | 薄膜トランジスタ素子 |
AU2003235181A1 (en) * | 2002-04-22 | 2003-11-03 | Konica Minolta Holdings, Inc. | Organic semiconductor composition, organic semiconductor element, and process for producing the same |
JP3804594B2 (ja) * | 2002-08-02 | 2006-08-02 | 日本電気株式会社 | 触媒担持基板およびそれを用いたカーボンナノチューブの成長方法ならびにカーボンナノチューブを用いたトランジスタ |
US7067867B2 (en) * | 2002-09-30 | 2006-06-27 | Nanosys, Inc. | Large-area nonenabled macroelectronic substrates and uses therefor |
US7051945B2 (en) * | 2002-09-30 | 2006-05-30 | Nanosys, Inc | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
CN1208818C (zh) | 2002-10-16 | 2005-06-29 | 中国科学院化学研究所 | 一种阵列碳纳米管薄膜晶体管的制备方法 |
EP1434281A3 (en) * | 2002-12-26 | 2007-10-24 | Konica Minolta Holdings, Inc. | Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit |
US7037767B2 (en) * | 2003-03-24 | 2006-05-02 | Konica Minolta Holdings, Inc. | Thin-film transistor, thin-film transistor sheet and their manufacturing method |
US6918284B2 (en) * | 2003-03-24 | 2005-07-19 | The United States Of America As Represented By The Secretary Of The Navy | Interconnected networks of single-walled carbon nanotubes |
JP4834950B2 (ja) * | 2003-09-12 | 2011-12-14 | ソニー株式会社 | 電界効果半導体装置の製造方法 |
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US20090286362A1 (en) | 2009-11-19 |
CN101582381B (zh) | 2011-01-26 |
JP2009278107A (ja) | 2009-11-26 |
US7754526B2 (en) | 2010-07-13 |
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