CN103650116B - 衬底冷冻干燥装置和方法 - Google Patents
衬底冷冻干燥装置和方法 Download PDFInfo
- Publication number
- CN103650116B CN103650116B CN201280026928.6A CN201280026928A CN103650116B CN 103650116 B CN103650116 B CN 103650116B CN 201280026928 A CN201280026928 A CN 201280026928A CN 103650116 B CN103650116 B CN 103650116B
- Authority
- CN
- China
- Prior art keywords
- chamber
- electrostatic chuck
- drying
- wet substrate
- dry chemistry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
- Weting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161491727P | 2011-05-31 | 2011-05-31 | |
| US61/491,727 | 2011-05-31 | ||
| US13/273,090 US9673037B2 (en) | 2011-05-31 | 2011-10-13 | Substrate freeze dry apparatus and method |
| US13/273,090 | 2011-10-13 | ||
| PCT/US2012/039855 WO2012166727A2 (en) | 2011-05-31 | 2012-05-29 | Substrate freeze dry apparatus and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103650116A CN103650116A (zh) | 2014-03-19 |
| CN103650116B true CN103650116B (zh) | 2017-05-03 |
Family
ID=47260252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280026928.6A Active CN103650116B (zh) | 2011-05-31 | 2012-05-29 | 衬底冷冻干燥装置和方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9673037B2 (enExample) |
| JP (1) | JP2014523636A (enExample) |
| CN (1) | CN103650116B (enExample) |
| TW (1) | TWI571948B (enExample) |
| WO (1) | WO2012166727A2 (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1870649A1 (en) * | 2006-06-20 | 2007-12-26 | Octapharma AG | Lyophilisation targetting defined residual moisture by limited desorption energy levels |
| JP5622675B2 (ja) * | 2011-07-05 | 2014-11-12 | 株式会社東芝 | 基板処理方法及び基板処理装置 |
| US10069443B2 (en) * | 2011-12-20 | 2018-09-04 | Tokyo Electron Limited | Dechuck control method and plasma processing apparatus |
| US9970708B2 (en) | 2012-02-01 | 2018-05-15 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US12276454B2 (en) | 2020-04-21 | 2025-04-15 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US9513053B2 (en) | 2013-03-14 | 2016-12-06 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US12215925B2 (en) | 2020-04-21 | 2025-02-04 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US10240867B2 (en) | 2012-02-01 | 2019-03-26 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US9644891B2 (en) | 2012-02-01 | 2017-05-09 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| WO2016105505A1 (en) | 2014-12-23 | 2016-06-30 | Revive Electronics, LLC | Apparatuses and methods for controlling power to electronic devices |
| US10876792B2 (en) | 2012-02-01 | 2020-12-29 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US10690413B2 (en) | 2012-02-01 | 2020-06-23 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| EP2810004B1 (en) | 2012-02-01 | 2018-11-14 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US11713924B2 (en) | 2012-02-01 | 2023-08-01 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US12281847B2 (en) | 2020-04-21 | 2025-04-22 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| JP5859888B2 (ja) * | 2012-03-26 | 2016-02-16 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
| US8898928B2 (en) * | 2012-10-11 | 2014-12-02 | Lam Research Corporation | Delamination drying apparatus and method |
| US9488565B2 (en) | 2012-11-14 | 2016-11-08 | Revive Electronics, LLC | Method and apparatus for detecting moisture in portable electronic devices |
| NL2012204A (en) | 2013-02-07 | 2014-12-18 | Asml Holding Nv | Lithographic apparatus and method. |
| JP6106501B2 (ja) * | 2013-04-12 | 2017-04-05 | 東京エレクトロン株式会社 | 収納容器内の雰囲気管理方法 |
| US9666427B2 (en) * | 2013-06-21 | 2017-05-30 | Lam Research Corporation | Method of collapse-free drying of high aspect ratio structures |
| US20150060013A1 (en) * | 2013-09-05 | 2015-03-05 | Applied Materials, Inc. | Tunable temperature controlled electrostatic chuck assembly |
| JP6259299B2 (ja) * | 2014-01-30 | 2018-01-10 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| JP2016025233A (ja) * | 2014-07-22 | 2016-02-08 | 株式会社東芝 | 基板処理装置、及び基板処理方法 |
| US10192751B2 (en) * | 2015-10-15 | 2019-01-29 | Lam Research Corporation | Systems and methods for ultrahigh selective nitride etch |
| WO2017075554A1 (en) * | 2015-10-29 | 2017-05-04 | Golfetto Michael | Methods freeze drying and composite materials |
| CN105467682A (zh) * | 2016-01-15 | 2016-04-06 | 京东方科技集团股份有限公司 | 膜层结构、其制作方法、显示基板、背光源及显示装置 |
| KR102008566B1 (ko) * | 2016-05-24 | 2019-08-07 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 및 기판 처리 방법 |
| EP3340280A1 (en) * | 2016-12-26 | 2018-06-27 | SCREEN Holdings Co., Ltd. | Substrate treating apparatus and substrate treating method |
| JP7001423B2 (ja) * | 2016-12-26 | 2022-01-19 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
| CN108807670B (zh) * | 2017-05-03 | 2020-04-28 | 京东方科技集团股份有限公司 | 一种薄膜的制备方法、阵列基板的制备方法及显示面板 |
| JP6966899B2 (ja) | 2017-08-31 | 2021-11-17 | 株式会社Screenホールディングス | 基板乾燥方法および基板処理装置 |
| JP7010629B2 (ja) * | 2017-08-31 | 2022-01-26 | 株式会社Screenホールディングス | 基板乾燥方法および基板処理装置 |
| US11302525B2 (en) * | 2017-09-22 | 2022-04-12 | SCREEN Holdings Co., Ltd. | Substrate processing method and substrate processing apparatus |
| JP6954793B2 (ja) * | 2017-09-25 | 2021-10-27 | 株式会社Screenホールディングス | 基板処理方法、基板処理液及び基板処理装置 |
| US11149345B2 (en) * | 2017-12-11 | 2021-10-19 | Applied Materials, Inc. | Cryogenically cooled rotatable electrostatic chuck |
| US10957530B2 (en) * | 2017-12-19 | 2021-03-23 | Micron Technology, Inc. | Freezing a sacrificial material in forming a semiconductor |
| US10811267B2 (en) * | 2017-12-21 | 2020-10-20 | Micron Technology, Inc. | Methods of processing semiconductor device structures and related systems |
| US10497559B2 (en) * | 2018-03-28 | 2019-12-03 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for dehydrating semiconductor structure and dehydrating method of the same |
| JP7336306B2 (ja) * | 2018-10-23 | 2023-08-31 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
| JP7233294B2 (ja) * | 2019-04-25 | 2023-03-06 | 株式会社Screenホールディングス | 基板処理方法、半導体製造方法、および、基板処理装置 |
| EP4017924A4 (en) | 2019-08-21 | 2023-11-08 | FUJIFILM Electronic Materials U.S.A., Inc. | SURFACE TREATMENT COMPOSITIONS AND METHODS |
| US11871667B2 (en) * | 2020-09-17 | 2024-01-09 | Applied Materials, Inc. | Methods and apparatus for warpage correction |
| CN113758157A (zh) * | 2021-08-02 | 2021-12-07 | 南京研沃生物科技有限公司 | 一种微波真空冷冻干燥机及其介质分离处理方法 |
| US11859153B2 (en) | 2021-11-08 | 2024-01-02 | Changxin Memory Technologies, Inc. | Method for cleaning substrate and system for cleaning substrate |
| CN116092915B (zh) * | 2021-11-08 | 2025-08-15 | 长鑫存储技术有限公司 | 一种衬底的清洁方法以及用于清洁衬底的系统 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1178307A (zh) * | 1996-10-01 | 1998-04-08 | 三菱电机株式会社 | 无化学物质的干燥空气发生装置 |
| US5835334A (en) * | 1996-09-30 | 1998-11-10 | Lam Research | Variable high temperature chuck for high density plasma chemical vapor deposition |
| US20030172954A1 (en) * | 2002-03-12 | 2003-09-18 | Applied Materials, Inc. | Methods and apparatuses for drying wafer |
| WO2007043755A1 (en) * | 2005-10-13 | 2007-04-19 | Sunsook Hwang | Rapid freezing/vacuum drying method and apparatus of a semiconductor wafer |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4911761A (en) * | 1984-05-21 | 1990-03-27 | Cfm Technologies Research Associates | Process and apparatus for drying surfaces |
| JPS62149137A (ja) | 1985-09-24 | 1987-07-03 | Tomuko:Kk | 乾燥装置 |
| JPS6372877A (ja) | 1986-09-12 | 1988-04-02 | Tokuda Seisakusho Ltd | 真空処理装置 |
| JPS649624A (en) * | 1987-07-02 | 1989-01-12 | Mitsubishi Electric Corp | Method of drying semiconductor device |
| KR910007593A (ko) | 1989-10-17 | 1991-05-30 | 제임스 조셉 드롱 | 강제 유체대류에 의한 오염 입자 제거장치 및 방법 |
| JP2646435B2 (ja) * | 1990-11-02 | 1997-08-27 | 株式会社日立サイエンスシステムズ | 真空凍結乾燥装置 |
| JPH04242930A (ja) | 1990-12-29 | 1992-08-31 | Tokyo Electron Ltd | 被処理物の乾燥方法 |
| JPH05272867A (ja) | 1992-03-26 | 1993-10-22 | Okawara Mfg Co Ltd | 真空乾燥装置における乾燥状態検知方法並びに乾燥状態検知機構 |
| JPH0754795B2 (ja) | 1993-01-28 | 1995-06-07 | 日本電気株式会社 | レジスト現像方法 |
| JP2947694B2 (ja) | 1993-07-02 | 1999-09-13 | 株式会社日立製作所 | レジストパターン形成方法 |
| US5740016A (en) | 1996-03-29 | 1998-04-14 | Lam Research Corporation | Solid state temperature controlled substrate holder |
| JPH09275085A (ja) | 1996-04-05 | 1997-10-21 | Hitachi Ltd | 半導体基板の洗浄方法ならびに洗浄装置および半導体基板製造用成膜方法および成膜装置 |
| JPH11294948A (ja) * | 1998-04-09 | 1999-10-29 | Nissan Motor Co Ltd | 微小装置の製造方法 |
| US6335534B1 (en) * | 1998-04-17 | 2002-01-01 | Kabushiki Kaisha Toshiba | Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes |
| JP2001026664A (ja) * | 1999-05-13 | 2001-01-30 | Matsushita Electric Ind Co Ltd | 多孔体の製造方法 |
| US6377437B1 (en) | 1999-12-22 | 2002-04-23 | Lam Research Corporation | High temperature electrostatic chuck |
| US6337277B1 (en) * | 2000-06-28 | 2002-01-08 | Lam Research Corporation | Clean chemistry low-k organic polymer etch |
| US6660459B2 (en) * | 2001-03-14 | 2003-12-09 | Advanced Micro Devices, Inc. | System and method for developing a photoresist layer with reduced pattern collapse |
| US6669783B2 (en) | 2001-06-28 | 2003-12-30 | Lam Research Corporation | High temperature electrostatic chuck |
| US6858091B2 (en) * | 2001-07-13 | 2005-02-22 | Lam Research Corporation | Method for controlling galvanic corrosion effects on a single-wafer cleaning system |
| JP2003068836A (ja) * | 2001-08-27 | 2003-03-07 | Matsushita Electric Ind Co Ltd | プラズマ処理装置及びプラズマ処理方法 |
| JP2003174007A (ja) * | 2001-12-04 | 2003-06-20 | Supurauto:Kk | 基板の真空乾燥方法 |
| JP4013745B2 (ja) * | 2002-11-20 | 2007-11-28 | 松下電器産業株式会社 | プラズマ処理方法 |
| JP2004266212A (ja) | 2003-03-04 | 2004-09-24 | Tadahiro Omi | 基板の処理システム |
| US20040261946A1 (en) * | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
| JP4765328B2 (ja) * | 2004-04-16 | 2011-09-07 | 東京エレクトロン株式会社 | 被処理体の処理装置 |
| KR100645042B1 (ko) | 2004-09-07 | 2006-11-10 | 삼성전자주식회사 | 반도체 기판 세정 장치 |
| FR2880105B1 (fr) | 2004-12-23 | 2007-04-20 | Cie Financiere Alcatel Sa | Dispositif et procede de pilotage de l'operation de deshydratation durant un traitement de lyophilisation |
| US7789962B2 (en) * | 2005-03-31 | 2010-09-07 | Tokyo Electron Limited | Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same |
| US7867791B2 (en) * | 2005-07-29 | 2011-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device using multiple mask layers formed through use of an exposure mask that transmits light at a plurality of intensities |
| WO2007112454A2 (en) * | 2006-03-28 | 2007-10-04 | Stratusys Inc. | Apparatus and method for processing substrates using one or more vacuum transfer chamber units |
| US20080286978A1 (en) * | 2007-05-17 | 2008-11-20 | Rong Chen | Etching and passivating for high aspect ratio features |
| US20090139657A1 (en) * | 2007-12-04 | 2009-06-04 | Applied Materials, Inc. | Etch system |
| US20100081274A1 (en) * | 2008-09-29 | 2010-04-01 | Tokyo Electron Limited | Method for forming ruthenium metal cap layers |
| JP5390846B2 (ja) | 2008-12-09 | 2014-01-15 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマクリーニング方法 |
| JP5373429B2 (ja) * | 2009-02-25 | 2013-12-18 | 大日本スクリーン製造株式会社 | 基板乾燥装置および基板乾燥方法 |
| KR101108337B1 (ko) * | 2009-12-31 | 2012-01-25 | 주식회사 디엠에스 | 2단의 냉매 유로를 포함하는 정전척의 온도제어장치 |
| US20120281333A1 (en) * | 2011-05-06 | 2012-11-08 | Advanced Ion Beam Technology, Inc. | Temperature-controllable electrostatic chuck |
-
2011
- 2011-10-13 US US13/273,090 patent/US9673037B2/en not_active Expired - Fee Related
-
2012
- 2012-05-29 TW TW101119160A patent/TWI571948B/zh active
- 2012-05-29 CN CN201280026928.6A patent/CN103650116B/zh active Active
- 2012-05-29 WO PCT/US2012/039855 patent/WO2012166727A2/en not_active Ceased
- 2012-05-29 JP JP2014513642A patent/JP2014523636A/ja not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5835334A (en) * | 1996-09-30 | 1998-11-10 | Lam Research | Variable high temperature chuck for high density plasma chemical vapor deposition |
| CN1178307A (zh) * | 1996-10-01 | 1998-04-08 | 三菱电机株式会社 | 无化学物质的干燥空气发生装置 |
| US20030172954A1 (en) * | 2002-03-12 | 2003-09-18 | Applied Materials, Inc. | Methods and apparatuses for drying wafer |
| WO2007043755A1 (en) * | 2005-10-13 | 2007-04-19 | Sunsook Hwang | Rapid freezing/vacuum drying method and apparatus of a semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014523636A (ja) | 2014-09-11 |
| WO2012166727A2 (en) | 2012-12-06 |
| TWI571948B (zh) | 2017-02-21 |
| CN103650116A (zh) | 2014-03-19 |
| WO2012166727A3 (en) | 2013-05-10 |
| US9673037B2 (en) | 2017-06-06 |
| TW201308486A (zh) | 2013-02-16 |
| US20120304483A1 (en) | 2012-12-06 |
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