TWI571948B - 基板冷凍乾燥設備及方法 - Google Patents
基板冷凍乾燥設備及方法 Download PDFInfo
- Publication number
- TWI571948B TWI571948B TW101119160A TW101119160A TWI571948B TW I571948 B TWI571948 B TW I571948B TW 101119160 A TW101119160 A TW 101119160A TW 101119160 A TW101119160 A TW 101119160A TW I571948 B TWI571948 B TW I571948B
- Authority
- TW
- Taiwan
- Prior art keywords
- drying
- substrate
- freeze
- chamber
- electrostatic chuck
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 93
- 238000000034 method Methods 0.000 title claims description 46
- 238000001035 drying Methods 0.000 claims description 75
- 239000000126 substance Substances 0.000 claims description 70
- 238000004108 freeze drying Methods 0.000 claims description 37
- 239000007788 liquid Substances 0.000 claims description 37
- 239000012530 fluid Substances 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 24
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 23
- 238000001816 cooling Methods 0.000 claims description 20
- 238000004891 communication Methods 0.000 claims description 16
- 238000012545 processing Methods 0.000 claims description 13
- 239000012298 atmosphere Substances 0.000 claims description 9
- 238000012546 transfer Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- 238000004320 controlled atmosphere Methods 0.000 claims description 6
- 230000008014 freezing Effects 0.000 claims description 6
- 238000007710 freezing Methods 0.000 claims description 6
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 4
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 2
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 claims description 2
- FBOZXECLQNJBKD-ZDUSSCGKSA-N L-methotrexate Chemical compound C=1N=C2N=C(N)N=C(N)C2=NC=1CN(C)C1=CC=C(C(=O)N[C@@H](CCC(O)=O)C(O)=O)C=C1 FBOZXECLQNJBKD-ZDUSSCGKSA-N 0.000 claims 1
- 206010027476 Metastases Diseases 0.000 claims 1
- KTUQUZJOVNIKNZ-UHFFFAOYSA-N butan-1-ol;hydrate Chemical compound O.CCCCO KTUQUZJOVNIKNZ-UHFFFAOYSA-N 0.000 claims 1
- 230000009401 metastasis Effects 0.000 claims 1
- 229960000485 methotrexate Drugs 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 39
- 230000008569 process Effects 0.000 description 21
- 210000002381 plasma Anatomy 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000007711 solidification Methods 0.000 description 8
- 230000008023 solidification Effects 0.000 description 8
- 238000001636 atomic emission spectroscopy Methods 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 238000000859 sublimation Methods 0.000 description 6
- 230000008022 sublimation Effects 0.000 description 6
- 238000004377 microelectronic Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 210000002304 esc Anatomy 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000013557 residual solvent Substances 0.000 description 3
- 239000003039 volatile agent Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000352 supercritical drying Methods 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
- Weting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161491727P | 2011-05-31 | 2011-05-31 | |
| US13/273,090 US9673037B2 (en) | 2011-05-31 | 2011-10-13 | Substrate freeze dry apparatus and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201308486A TW201308486A (zh) | 2013-02-16 |
| TWI571948B true TWI571948B (zh) | 2017-02-21 |
Family
ID=47260252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101119160A TWI571948B (zh) | 2011-05-31 | 2012-05-29 | 基板冷凍乾燥設備及方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9673037B2 (enExample) |
| JP (1) | JP2014523636A (enExample) |
| CN (1) | CN103650116B (enExample) |
| TW (1) | TWI571948B (enExample) |
| WO (1) | WO2012166727A2 (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1870649A1 (en) * | 2006-06-20 | 2007-12-26 | Octapharma AG | Lyophilisation targetting defined residual moisture by limited desorption energy levels |
| JP5622675B2 (ja) * | 2011-07-05 | 2014-11-12 | 株式会社東芝 | 基板処理方法及び基板処理装置 |
| US10069443B2 (en) * | 2011-12-20 | 2018-09-04 | Tokyo Electron Limited | Dechuck control method and plasma processing apparatus |
| US10690413B2 (en) | 2012-02-01 | 2020-06-23 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US12281847B2 (en) | 2020-04-21 | 2025-04-22 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US12276454B2 (en) | 2020-04-21 | 2025-04-15 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US11713924B2 (en) | 2012-02-01 | 2023-08-01 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US10876792B2 (en) | 2012-02-01 | 2020-12-29 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US9970708B2 (en) | 2012-02-01 | 2018-05-15 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US10240867B2 (en) | 2012-02-01 | 2019-03-26 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US9644891B2 (en) | 2012-02-01 | 2017-05-09 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US9513053B2 (en) | 2013-03-14 | 2016-12-06 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US12215925B2 (en) | 2020-04-21 | 2025-02-04 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| US8991067B2 (en) | 2012-02-01 | 2015-03-31 | Revive Electronics, LLC | Methods and apparatuses for drying electronic devices |
| JP5859888B2 (ja) * | 2012-03-26 | 2016-02-16 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| US8898928B2 (en) * | 2012-10-11 | 2014-12-02 | Lam Research Corporation | Delamination drying apparatus and method |
| US9488565B2 (en) | 2012-11-14 | 2016-11-08 | Revive Electronics, LLC | Method and apparatus for detecting moisture in portable electronic devices |
| JP6526575B2 (ja) | 2013-02-07 | 2019-06-05 | エーエスエムエル ホールディング エヌ．ブイ． | リソグラフィ装置及び方法 |
| JP6106501B2 (ja) * | 2013-04-12 | 2017-04-05 | 東京エレクトロン株式会社 | 収納容器内の雰囲気管理方法 |
| US9666427B2 (en) * | 2013-06-21 | 2017-05-30 | Lam Research Corporation | Method of collapse-free drying of high aspect ratio structures |
| US20150060013A1 (en) * | 2013-09-05 | 2015-03-05 | Applied Materials, Inc. | Tunable temperature controlled electrostatic chuck assembly |
| JP6259299B2 (ja) * | 2014-01-30 | 2018-01-10 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP2016025233A (ja) * | 2014-07-22 | 2016-02-08 | 株式会社東芝 | 基板処理装置、及び基板処理方法 |
| CA3009047A1 (en) | 2014-12-23 | 2016-06-30 | Revive Electronics, LLC | Apparatuses and methods for controlling power to electronic devices |
| US10192751B2 (en) * | 2015-10-15 | 2019-01-29 | Lam Research Corporation | Systems and methods for ultrahigh selective nitride etch |
| WO2017075554A1 (en) * | 2015-10-29 | 2017-05-04 | Golfetto Michael | Methods freeze drying and composite materials |
| CN105467682A (zh) * | 2016-01-15 | 2016-04-06 | 京东方科技集团股份有限公司 | 膜层结构、其制作方法、显示基板、背光源及显示装置 |
| KR102008566B1 (ko) * | 2016-05-24 | 2019-08-07 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 및 기판 처리 방법 |
| EP3340280A1 (en) * | 2016-12-26 | 2018-06-27 | SCREEN Holdings Co., Ltd. | Substrate treating apparatus and substrate treating method |
| JP7001423B2 (ja) * | 2016-12-26 | 2022-01-19 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置及び基板処理方法 |
| CN108807670B (zh) * | 2017-05-03 | 2020-04-28 | 京东方科技集团股份有限公司 | 一种薄膜的制备方法、阵列基板的制备方法及显示面板 |
| JP6966899B2 (ja) * | 2017-08-31 | 2021-11-17 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板乾燥方法および基板処理装置 |
| JP7010629B2 (ja) * | 2017-08-31 | 2022-01-26 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板乾燥方法および基板処理装置 |
| US11302525B2 (en) * | 2017-09-22 | 2022-04-12 | SCREEN Holdings Co., Ltd. | Substrate processing method and substrate processing apparatus |
| JP6954793B2 (ja) * | 2017-09-25 | 2021-10-27 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法、基板処理液及び基板処理装置 |
| US11149345B2 (en) * | 2017-12-11 | 2021-10-19 | Applied Materials, Inc. | Cryogenically cooled rotatable electrostatic chuck |
| US10957530B2 (en) * | 2017-12-19 | 2021-03-23 | Micron Technology, Inc. | Freezing a sacrificial material in forming a semiconductor |
| US10811267B2 (en) * | 2017-12-21 | 2020-10-20 | Micron Technology, Inc. | Methods of processing semiconductor device structures and related systems |
| US10497559B2 (en) * | 2018-03-28 | 2019-12-03 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for dehydrating semiconductor structure and dehydrating method of the same |
| JP7336306B2 (ja) * | 2018-10-23 | 2023-08-31 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
| JP7233294B2 (ja) * | 2019-04-25 | 2023-03-06 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法、半導体製造方法、および、基板処理装置 |
| US11508569B2 (en) | 2019-08-21 | 2022-11-22 | Fujifilm Electronic Materials U.S.A., Inc. | Surface treatment compositions and methods |
| US11871667B2 (en) | 2020-09-17 | 2024-01-09 | Applied Materials, Inc. | Methods and apparatus for warpage correction |
| CN113758157A (zh) * | 2021-08-02 | 2021-12-07 | 南京研沃生物科技有限公司 | 一种微波真空冷冻干燥机及其介质分离处理方法 |
| CN116092915B (zh) * | 2021-11-08 | 2025-08-15 | 长鑫存储技术有限公司 | 一种衬底的清洁方法以及用于清洁衬底的系统 |
| US11859153B2 (en) | 2021-11-08 | 2024-01-02 | Changxin Memory Technologies, Inc. | Method for cleaning substrate and system for cleaning substrate |
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| US20060137212A1 (en) * | 2004-12-23 | 2006-06-29 | Alcatel | Device and method for controlling dehydration during freeze-drying |
| US20060219360A1 (en) * | 2005-03-31 | 2006-10-05 | Tokyo Electron Limited | Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same |
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| US20090139657A1 (en) * | 2007-12-04 | 2009-06-04 | Applied Materials, Inc. | Etch system |
| US20100081274A1 (en) * | 2008-09-29 | 2010-04-01 | Tokyo Electron Limited | Method for forming ruthenium metal cap layers |
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- 2012-05-29 TW TW101119160A patent/TWI571948B/zh active
- 2012-05-29 CN CN201280026928.6A patent/CN103650116B/zh active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| CN103650116B (zh) | 2017-05-03 |
| CN103650116A (zh) | 2014-03-19 |
| WO2012166727A3 (en) | 2013-05-10 |
| JP2014523636A (ja) | 2014-09-11 |
| WO2012166727A2 (en) | 2012-12-06 |
| US20120304483A1 (en) | 2012-12-06 |
| US9673037B2 (en) | 2017-06-06 |
| TW201308486A (zh) | 2013-02-16 |
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