CN103578948A - 抑制pmos器件工艺中栅极多晶硅耗尽的方法 - Google Patents
抑制pmos器件工艺中栅极多晶硅耗尽的方法 Download PDFInfo
- Publication number
- CN103578948A CN103578948A CN201210266287.3A CN201210266287A CN103578948A CN 103578948 A CN103578948 A CN 103578948A CN 201210266287 A CN201210266287 A CN 201210266287A CN 103578948 A CN103578948 A CN 103578948A
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- China
- Prior art keywords
- polycrystalline silicon
- grid polycrystalline
- pmos device
- silicon
- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000011982 device technology Methods 0.000 title claims abstract description 13
- 230000000452 restraining effect Effects 0.000 title abstract 3
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052796 boron Inorganic materials 0.000 claims abstract description 24
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910001449 indium ion Inorganic materials 0.000 claims abstract description 10
- 230000007547 defect Effects 0.000 claims abstract description 6
- 238000002347 injection Methods 0.000 claims abstract description 4
- 239000007924 injection Substances 0.000 claims abstract description 4
- 229920005591 polysilicon Polymers 0.000 claims description 16
- 238000002513 implantation Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000005764 inhibitory process Effects 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 abstract description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 5
- -1 boron ions Chemical class 0.000 abstract 1
- 230000009466 transformation Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 41
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210266287.3A CN103578948B (zh) | 2012-07-30 | 2012-07-30 | 抑制pmos器件工艺中栅极多晶硅耗尽的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210266287.3A CN103578948B (zh) | 2012-07-30 | 2012-07-30 | 抑制pmos器件工艺中栅极多晶硅耗尽的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103578948A true CN103578948A (zh) | 2014-02-12 |
CN103578948B CN103578948B (zh) | 2016-06-08 |
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CN201210266287.3A Active CN103578948B (zh) | 2012-07-30 | 2012-07-30 | 抑制pmos器件工艺中栅极多晶硅耗尽的方法 |
Country Status (1)
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CN (1) | CN103578948B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016197410A1 (zh) * | 2015-06-09 | 2016-12-15 | 深圳市华星光电技术有限公司 | 多晶硅薄膜的制备方法及多晶硅tft结构 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6180469B1 (en) * | 1998-11-06 | 2001-01-30 | Advanced Micro Devices, Inc. | Low resistance salicide technology with reduced silicon consumption |
US20080054363A1 (en) * | 2006-08-31 | 2008-03-06 | Haeng-Leem Jeon | Dual gate cmos semiconductor device and method for manufacturing the same |
CN101197286A (zh) * | 2006-12-05 | 2008-06-11 | 中芯国际集成电路制造(上海)有限公司 | 金属氧化物半导体器件的制造方法 |
CN101211966A (zh) * | 2006-12-27 | 2008-07-02 | 海力士半导体有限公司 | 具有栅极结构的半导体器件及其制造方法 |
CN101728274A (zh) * | 2008-10-27 | 2010-06-09 | 台湾积体电路制造股份有限公司 | 通过共注入碳和氮降低多晶硅耗尽 |
-
2012
- 2012-07-30 CN CN201210266287.3A patent/CN103578948B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6180469B1 (en) * | 1998-11-06 | 2001-01-30 | Advanced Micro Devices, Inc. | Low resistance salicide technology with reduced silicon consumption |
US20080054363A1 (en) * | 2006-08-31 | 2008-03-06 | Haeng-Leem Jeon | Dual gate cmos semiconductor device and method for manufacturing the same |
CN101197286A (zh) * | 2006-12-05 | 2008-06-11 | 中芯国际集成电路制造(上海)有限公司 | 金属氧化物半导体器件的制造方法 |
CN101211966A (zh) * | 2006-12-27 | 2008-07-02 | 海力士半导体有限公司 | 具有栅极结构的半导体器件及其制造方法 |
CN101728274A (zh) * | 2008-10-27 | 2010-06-09 | 台湾积体电路制造股份有限公司 | 通过共注入碳和氮降低多晶硅耗尽 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016197410A1 (zh) * | 2015-06-09 | 2016-12-15 | 深圳市华星光电技术有限公司 | 多晶硅薄膜的制备方法及多晶硅tft结构 |
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CN103578948B (zh) | 2016-06-08 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140114 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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TA01 | Transfer of patent application right |
Effective date of registration: 20140114 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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