CN103454769B - 光学系统、曝光装置以及制造器件的方法 - Google Patents

光学系统、曝光装置以及制造器件的方法 Download PDF

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Publication number
CN103454769B
CN103454769B CN201310208070.1A CN201310208070A CN103454769B CN 103454769 B CN103454769 B CN 103454769B CN 201310208070 A CN201310208070 A CN 201310208070A CN 103454769 B CN103454769 B CN 103454769B
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CN
China
Prior art keywords
mentioned
optical system
concave
reflecting mirror
mirror
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CN201310208070.1A
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English (en)
Chinese (zh)
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CN103454769A (zh
Inventor
永井善之
宫崎恭一
安延蔵
川岛春名
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Canon Inc
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Canon Inc
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Publication of CN103454769A publication Critical patent/CN103454769A/zh
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00Optical objectives specially designed for the purposes specified below
    • G02B13/24Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00Optical objectives specially designed for the purposes specified below
    • G02B13/18Optical objectives specially designed for the purposes specified below with lenses having one or more non-spherical faces, e.g. for reducing geometrical aberration
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00Optical objectives specially designed for the purposes specified below
    • G02B13/24Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
    • G02B13/26Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances for reproducing with unit magnification
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08Catadioptric systems
    • G02B17/0836Catadioptric systems using more than three curved mirrors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201310208070.1A 2012-06-04 2013-05-30 光学系统、曝光装置以及制造器件的方法 Active CN103454769B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-127531 2012-06-04
JP2012127531A JP6041541B2 (ja) 2012-06-04 2012-06-04 露光装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
CN103454769A CN103454769A (zh) 2013-12-18
CN103454769B true CN103454769B (zh) 2016-05-04

Family

ID=49737318

Family Applications (1)

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CN201310208070.1A Active CN103454769B (zh) 2012-06-04 2013-05-30 光学系统、曝光装置以及制造器件的方法

Country Status (4)

Country Link
JP (1) JP6041541B2 (enrdf_load_stackoverflow)
KR (1) KR20130136390A (enrdf_load_stackoverflow)
CN (1) CN103454769B (enrdf_load_stackoverflow)
TW (1) TWI490540B (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6463087B2 (ja) * 2014-11-14 2019-01-30 キヤノン株式会社 露光装置、および物品の製造方法
JP6386896B2 (ja) * 2014-12-02 2018-09-05 キヤノン株式会社 投影光学系、露光装置、および、デバイス製造方法
JP6896404B2 (ja) * 2016-11-30 2021-06-30 キヤノン株式会社 露光装置及び物品の製造方法
JP7358106B2 (ja) * 2019-07-31 2023-10-10 キヤノン株式会社 光学装置、投影光学系、露光装置及び物品の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
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US4690528A (en) * 1983-10-05 1987-09-01 Nippon Kogaku K. K. Projection exposure apparatus
CN1618114A (zh) * 2002-06-28 2005-05-18 佳能株式会社 反射镜设备、曝光设备以及器件制造方法
CN1746775A (zh) * 2004-08-13 2006-03-15 Asml荷兰有限公司 光刻设备和器件制造方法
TW200912562A (en) * 2007-07-31 2009-03-16 Canon Kk Optical system, exposure device, and device manufacturing method
CN101625455A (zh) * 2008-07-09 2010-01-13 佳能株式会社 投影光学系统、曝光装置以及器件制造方法

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JPS61144020A (ja) * 1984-12-18 1986-07-01 Canon Inc 露光装置
JPH0845824A (ja) * 1994-08-03 1996-02-16 Toshiba Corp 露光装置
JP3521416B2 (ja) * 1995-10-06 2004-04-19 株式会社ニコン 投影露光装置
JPH09180985A (ja) * 1995-12-25 1997-07-11 Nikon Corp 投影露光装置
JP2001290279A (ja) * 2000-04-04 2001-10-19 Canon Inc 走査型露光装置
AU2003242268A1 (en) * 2002-06-11 2003-12-22 Nikon Corporation Exposure system and exposure method
US6809888B1 (en) * 2003-04-16 2004-10-26 Ultratech, Inc. Apparatus and methods for thermal reduction of optical distortion
DE102004060184A1 (de) * 2004-12-14 2006-07-06 Carl Zeiss Smt Ag EUV-Spiegelanordnung
DE102005017262B3 (de) * 2005-04-12 2006-10-12 Xtreme Technologies Gmbh Kollektorspiegel für plasmabasierte kurzwellige Strahlungsquellen
US7959310B2 (en) * 2006-09-13 2011-06-14 Carl Zeiss Smt Gmbh Optical arrangement and EUV lithography device with at least one heated optical element, operating methods, and methods for cleaning as well as for providing an optical element
JP2008292761A (ja) * 2007-05-24 2008-12-04 Canon Inc 露光装置及びデバイス製造方法
JP2009162951A (ja) * 2007-12-28 2009-07-23 Canon Inc 反射屈折型投影光学系及びそれを有する露光装置
JP2009192569A (ja) * 2008-02-12 2009-08-27 Canon Inc 露光装置およびデバイス製造方法
EP2136250A1 (en) * 2008-06-18 2009-12-23 ASML Netherlands B.V. Lithographic apparatus and method
JP5587578B2 (ja) * 2008-09-26 2014-09-10 ギガフォトン株式会社 極端紫外光源装置およびパルスレーザ装置
JP2010128301A (ja) * 2008-11-28 2010-06-10 Canon Inc 露光装置
JP5495547B2 (ja) * 2008-12-25 2014-05-21 キヤノン株式会社 処理装置、およびデバイス製造方法
JP2011039172A (ja) * 2009-08-07 2011-02-24 Canon Inc 露光装置およびデバイス製造方法
JP5595001B2 (ja) * 2009-10-06 2014-09-24 キヤノン株式会社 投影光学系、露光装置及びデバイス製造方法
CN102243444B (zh) * 2010-05-14 2013-04-10 北京京东方光电科技有限公司 一种曝光设备、掩膜板及曝光方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4690528A (en) * 1983-10-05 1987-09-01 Nippon Kogaku K. K. Projection exposure apparatus
CN1618114A (zh) * 2002-06-28 2005-05-18 佳能株式会社 反射镜设备、曝光设备以及器件制造方法
CN1746775A (zh) * 2004-08-13 2006-03-15 Asml荷兰有限公司 光刻设备和器件制造方法
TW200912562A (en) * 2007-07-31 2009-03-16 Canon Kk Optical system, exposure device, and device manufacturing method
CN101625455A (zh) * 2008-07-09 2010-01-13 佳能株式会社 投影光学系统、曝光装置以及器件制造方法

Also Published As

Publication number Publication date
TW201350902A (zh) 2013-12-16
JP2013250541A (ja) 2013-12-12
KR20130136390A (ko) 2013-12-12
JP6041541B2 (ja) 2016-12-07
CN103454769A (zh) 2013-12-18
TWI490540B (zh) 2015-07-01

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