CN102243444B - 一种曝光设备、掩膜板及曝光方法 - Google Patents
一种曝光设备、掩膜板及曝光方法 Download PDFInfo
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- CN102243444B CN102243444B CN2010101759389A CN201010175938A CN102243444B CN 102243444 B CN102243444 B CN 102243444B CN 2010101759389 A CN2010101759389 A CN 2010101759389A CN 201010175938 A CN201010175938 A CN 201010175938A CN 102243444 B CN102243444 B CN 102243444B
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- mask plate
- light
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (8)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101759389A CN102243444B (zh) | 2010-05-14 | 2010-05-14 | 一种曝光设备、掩膜板及曝光方法 |
US13/105,110 US8502956B2 (en) | 2010-05-14 | 2011-05-11 | Exposure apparatus, mask plate and exposing method |
US13/934,663 US9195143B2 (en) | 2010-05-14 | 2013-07-03 | Mask plate and exposing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101759389A CN102243444B (zh) | 2010-05-14 | 2010-05-14 | 一种曝光设备、掩膜板及曝光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102243444A CN102243444A (zh) | 2011-11-16 |
CN102243444B true CN102243444B (zh) | 2013-04-10 |
Family
ID=44912081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101759389A Active CN102243444B (zh) | 2010-05-14 | 2010-05-14 | 一种曝光设备、掩膜板及曝光方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US8502956B2 (zh) |
CN (1) | CN102243444B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103206979B (zh) * | 2012-01-11 | 2017-01-25 | 昆山允升吉光电科技有限公司 | 掩模板承载架 |
JP6041541B2 (ja) * | 2012-06-04 | 2016-12-07 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
CN102998893B (zh) * | 2012-11-19 | 2014-06-25 | 京东方科技集团股份有限公司 | 使用反射式掩膜版的曝光装置及曝光方法 |
CN103034046B (zh) * | 2012-12-12 | 2014-07-02 | 京东方科技集团股份有限公司 | 掩模板、曝光系统和曝光方法 |
CN103207529B (zh) * | 2013-03-22 | 2015-04-29 | 京东方科技集团股份有限公司 | 曝光方法及曝光设备 |
CN104536258B (zh) * | 2014-12-23 | 2019-12-10 | 厦门天马微电子有限公司 | 一种掩膜板、曝光装置、制作光敏树脂图案的方法及基板 |
CN113759672B (zh) * | 2021-09-07 | 2024-06-11 | 昆山龙腾光电股份有限公司 | 曝光系统及曝光方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101487972A (zh) * | 2008-01-18 | 2009-07-22 | 北京京东方光电科技有限公司 | 可调节透过率的掩模板、制造方法及其掩模方法 |
CN101526754A (zh) * | 2009-03-26 | 2009-09-09 | 上海微电子装备有限公司 | 掩模版承版台及其光刻设备和双曝光方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5729331A (en) * | 1993-06-30 | 1998-03-17 | Nikon Corporation | Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus |
EP1704445A2 (de) * | 2004-01-16 | 2006-09-27 | Carl Zeiss SMT AG | Vorrichtung und verfahren zur optischen vermessung eines optischen systems, messstrukturträger und mikrolithographie-projekti onsbelichtungsanlage |
US20060222961A1 (en) * | 2005-03-31 | 2006-10-05 | Pei-Yang Yan | Leaky absorber for extreme ultraviolet mask |
KR100998670B1 (ko) * | 2007-10-31 | 2010-12-06 | 주식회사 하이닉스반도체 | 극자외선리소그래피에 사용되는 마스크 및 제조 방법, 노광방법 |
JP4968011B2 (ja) * | 2007-11-19 | 2012-07-04 | セイコーエプソン株式会社 | 半導体装置 |
KR100972863B1 (ko) * | 2008-04-22 | 2010-07-28 | 주식회사 하이닉스반도체 | 극자외선 리소그라피 마스크 및 그 제조 방법 |
JP5665784B2 (ja) * | 2012-03-16 | 2015-02-04 | 株式会社東芝 | フォトマスクおよびパターン形成方法 |
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2010
- 2010-05-14 CN CN2010101759389A patent/CN102243444B/zh active Active
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2011
- 2011-05-11 US US13/105,110 patent/US8502956B2/en active Active
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2013
- 2013-07-03 US US13/934,663 patent/US9195143B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101487972A (zh) * | 2008-01-18 | 2009-07-22 | 北京京东方光电科技有限公司 | 可调节透过率的掩模板、制造方法及其掩模方法 |
CN101526754A (zh) * | 2009-03-26 | 2009-09-09 | 上海微电子装备有限公司 | 掩模版承版台及其光刻设备和双曝光方法 |
Also Published As
Publication number | Publication date |
---|---|
US9195143B2 (en) | 2015-11-24 |
US8502956B2 (en) | 2013-08-06 |
CN102243444A (zh) | 2011-11-16 |
US20110281206A1 (en) | 2011-11-17 |
US20130293866A1 (en) | 2013-11-07 |
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Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20150707 Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20150707 |
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Effective date of registration: 20150707 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE Technology Group Co., Ltd. Patentee after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. |