CN104965358A - 反射式tft阵列面板及其制备方法和液晶显示器 - Google Patents

反射式tft阵列面板及其制备方法和液晶显示器 Download PDF

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CN104965358A
CN104965358A CN201510413303.0A CN201510413303A CN104965358A CN 104965358 A CN104965358 A CN 104965358A CN 201510413303 A CN201510413303 A CN 201510413303A CN 104965358 A CN104965358 A CN 104965358A
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reflecting electrode
layer
grid
electrode
line
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徐向阳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to PCT/CN2015/085639 priority patent/WO2017008343A1/zh
Priority to US15/025,987 priority patent/US20170160588A1/en
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Abstract

本发明公开一种反射式TFT阵列面板，包括：基板、栅极、栅线、反射电极、反射电极连接线、栅绝缘层、有源层和掺杂半导体层、源极、漏极、数据线、绝缘保护层、透明像素电极，所述反射电极连接线与所述栅线平行，所述数据线与所述栅线、反射电极连接线垂直，且所述栅线、反射电极连接线与相邻两根所述数据线在基板上的投影形成闭合的矩形，所述反射电极位于所形成的矩形内，且所述反射电极为具有反光性的金属。所述反射式TFT阵列面板结构简单，反射面积大。本发明还公开一种制备反射式TFT阵列面板的方法以及液晶显示器。

Description

反射式TFT阵列面板及其制备方法和液晶显示器
技术领域
本发明涉及液晶显示领域，尤其涉及一种TFT阵列面板及其制备方法。
背景技术
TFT-LCD(Thin Film Transistor-Liquid Crystal Display,薄膜晶体管液晶显示器)是利用设置在液晶层上电场强度的变化，改变液晶分子的旋转程度，从而控制透光的强弱来显示图像，通常包括偏光片、彩膜基板、TFT阵列面板，以及加在彩膜基板和TFT阵列面板之间的液晶分子层。现有技术中，TFT-LCD一般都具有背光模块，称为透射式或半反半透式TFT-LCD，其缺点是，在强光环境中，其对比度和亮度会大大降低，尤其是专用于户外显示的透射式TFT-LCD，显示效果更差，而反射式TFT-LCD由于其借助外部光源来达到显示效果，在环境光线很强的情况下，可以很好地保持显示的亮度和对比度，且其无需背光模组，所以同时具有耗能低、轻便等优点，很适合于便携式电子设备。因此，反射式TFT-LCD逐渐成为液晶显示市场上的一个重要组成部分。
现有技术中，往往通过改变偏光片的偏光特性，或者改变液晶的类型或性能，或者在TFT阵列面板上增加一些部件，以设计出显示效果好的反射式TFT-LCD，然而，这些改变涉及材料类型、结构和性能等多方面，往往比较复杂、操作难度大，且反射面积小，难以充分利用环境光源。
发明内容
有鉴于此，本发明所要解决的技术问题在于，提供一种结构简单、反射面积大的反射式TFT阵列面板和液晶显示器，其可充分利用环境光源；本发明还提供一种制备反射式TFT阵列面板的方法。
为了解决上述技术问题，一方面，本发明提供一种反射式TFT阵列面板，包括：
基板；
栅极、栅线、反射电极和反射电极连接线，形成于基板上；
栅绝缘层，形成于所述栅极、栅线、反射电极和反射电极连接线上；
依次形成于所述栅绝缘层上的有源层和掺杂半导体层，且位于所述栅极正上方；
源极、漏极和数据线，所述源极和漏极形成于掺杂半导体层上，所述数据线与漏极连接；
绝缘保护层，形成于所述源极、漏极和数据线上；
透明像素电极，形成于所述绝缘保护层上，且位于所述反射电极上方，通过过孔与源极相接；
所述反射电极连接线与所述栅线平行，所述数据线与所述栅线、反射电极连接线垂直，且所述栅线、反射电极连接线与相邻两根所述数据线在所述基板上的投影形成闭合的矩形，所述反射电极位于所形成的矩形内，且所述反射电极为具有反光性的金属。
其中，所述栅极、栅线、反射电极连接线和所述数据线，皆为具有反光性的金属层。
其中，所述反射电极具有凹凸不平的表面。
其中，所述反射电极表面设置有相邻间距小于80μm的凸条。
其中，所述反射电极为金属铝、钼、银、钛、铜和铬中的至少一种。
其中，所述反射电极的材质与所述栅极、栅线的材质相同。
其中，所述有源层为非晶硅层或石墨烯层。
另一方面，本发明还提供一种液晶显示器，包括彩色滤光片、权利要求1至6任一项所述的反射式TFT阵列面板，以及夹在所述彩色滤光片和所述反射式TFT阵列面板之间的液晶层。
再一方面，本发明还提供了一种制备反射式TFT阵列面板的方法，包括：
步骤1、采用物理气相沉积法(PVD)在基板上沉积金属层，通过第一次构图工艺形成栅极、栅线、反射电极连接线和反射电极；
步骤2、采用等离子体增强化学气相沉积(PECVD)法在完成步骤1的基板上依次沉积栅绝缘层、有源层和掺杂半导体层，通过第二次构图工艺形成栅绝缘层、有源层和掺杂半导体层的图形；
步骤3、采用PVD法在完成步骤2的基板上沉积源漏极金属层，通过第三次构图工艺形成漏极、源极和数据线；
步骤4、采用PECVD法在完成步骤3的基板上沉积硅的氮化物或硅的氧化物，形成绝缘保护层，并通过第四次构图工艺形成过孔；
步骤5、采用PVD法在完成步骤4的基板上沉积透明导电材料，通过第五次构图工艺形成透明像素电极。
其中，步骤1具体为：采用物理气相沉积法在基板上沉积一层金属，所述金属为钼、铝、铬、银和铜之中的至少一种，通过第一次构图工艺形成栅极、栅线、反射电极连接线和反射电极。
其中，步骤2中所述栅绝缘层为硅的氮化物或氧化物，所述有源层为非晶硅或石墨烯，所述掺杂半导体层为掺杂非晶硅。
与现有技术相比，本发明具有以下技术效果：(1)本发明的反射式TFT阵列面板和液晶显示器在基板上设置了反射电极，结构简单，且反射电极与栅极、栅线可同时在同一道工序中完成制作，工艺上简便可行；(2)本发明的TFT阵列面板中，反射电极是具有反光性的金属，可以充分利用环境光源。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1是本发明反射式TFT阵列面板的一个实施方式的俯视示意图；
图2是图1中沿剖切线A-A的截面示意图；
图3是图1中沿剖切线C-C的截面示意图；
图4是本发明反射式TFT阵列面板的一个实施方式中设置了凸条的反射电极；
图5是本发明制备TFT阵列面板的方法流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。
请同时参阅图1、2和3，图1是本发明反射式TFT阵列面板的一个实施方式的俯视示意图；图2和图3分别是图1中沿剖切线A-A、C-C的截面示意图。本发明的一个实施方式提供一种反射式TFT阵列面板，包括：
基板1；
形成于基板上的栅极2、栅线2'和反射电极3，栅极2、栅线2'和反射电极3处于同一平面，各个反射电极3之间用反射电极连接线3'连接，反射电极连接线3'与栅线2'平行，两者之间分布着彼此分离的栅极2和反射电极3，栅极2、栅线2'、反射电极和反射电极连接线3'可以是同一种材质，例如，可以是铝、钼、银、铜、铬或钛，也可以是这其中两种或几种金属的合金；
栅绝缘层4是一连续分布层，栅绝缘层4形成于栅极2、栅线2'、反射电极3和反射电极连接线3'上；
有源层5形成于栅绝缘层4上，且位于栅极2正上方，即栅绝缘层4阻隔
在有源层5和栅极2之间，有源层5的面积小于栅极2；
掺杂半导体层6形成于有源层5上，且其自身在中间处断开，形成沟道；换言之，掺杂半导体层6包括两部分，且在这两部分之间形成沟道；
源极7、漏极8和数据线9，所述源极7和漏极8形成于掺杂半导体层6上，数据线9与漏极8连接，且数据线9与栅线2'及反射电极连接线3'垂直；
绝缘保护层10和过孔11，绝缘保护层10形成于源极7、漏极8和数据线9上，过孔11贯穿绝缘保护层10与源极7相接；
透明像素电极12，形成于绝缘保护层10上，且位于反射电极3上方，透明像素电极12通过过孔11与源极7连接；
反射电极连接线3'与栅线2'平行，数据线9与栅线2'、反射电极连接线3'垂直，且栅线2'、反射电极连接线3'与相邻两根数据线9在基板1上的投影形成闭合的矩形，栅极2和反射电极3位于所形成的矩形内，反射电极3为具有反光性的金属。
由于反射电极设置为具有反光性的金属，可以有效反射来自环境光源的光，从而充分利用环境光源。
在本发明的反射式TFT阵列面板的一个实施方式中，将栅线2'、反射电极连接线3'、数据线9、栅极2和反射电极3均设置为具有反光性的金属，也就是说，上述所形成的矩形，以及分布于其内部的电极(即栅极和反射电极)均具有反光性，在保持各电极原有性能的同时，形成更大的反射面积，进一步充分利用环境光源。
较强的环境光入射时，部分光线可能在进入显示器时就被光滑的显示器表面反射，而进入TFT阵列面板的反射电极的光线经平坦的表面反射和折射后，从显示器表面穿出时，其角度可能与在显示器表面直接反射的光线的角度相同，从而造成同方向光线的叠加使反射光过强而影响显示效果，因而，在本发明的一个实施方式中，反射电极3具有凹凸不平的表面，从而使反射电极3对环境入射光的反射形成漫反射，反射方向各不相同，不会与在显示器表面直接反射的光同方向叠加，从而保证显示效果，增强对比度。
请参阅图4，在本发明的反射式TFT阵列面板的一个实施方式中，反射电极3表面设置有多个凸条3”，相邻的两个凸条3”之间的间距小于80μm'，所述凸条3”之间形成凹陷，起导光板的作用，凸条3”的材质可以与反射电极3的材质一样，两者一体成型，当然，在其它实施方式中，凸条3”和反射电极3也可以采用不同的导光材料。在本实施方式中，凸条3”的延伸方向是垂直于反射电极连接线3'，凸条3”间的间距为70μm，但是，在其它实施方式中，设计者可根据对光方向的要求而设置凸条3”的方向以及相邻的凸条3”之间的具体间距。也就是说，凸条3”的延伸方向可以是平行于反射电极连接线3'，或与反射电极连接线3'成一定角度，相邻的凸条3”之间的间距可以在10-50μm范围之间。
在本发明的反射式TFT阵列面板的一个实施方式中，反射电极3为金属铝、钼、银、铜和铬中的至少一种。
在本发明的反射式TFT阵列面板的一个实施方式中，反射电极3的材质可以与所述栅极、栅线的材质相同或不相同。
在本发明的反射式TFT阵列面板的一个实施方式中，有源层5可以是非晶硅层或石墨烯层。
在本发明的反射式TFT阵列面板的一个实施方式中，透明像素电极12可以是氧化铟锡层或金属网格结构。
本发明还提供一种液晶显示器，包括彩色滤光片和所述反射式TFT阵列面板，以及位于彩色滤光片和所述反射式TFT阵列面板之间的液晶显示层。
本发明还提供一种制备反射式TFT阵列面板的方法，请参阅图5，提供一种制备图1、2和3所对应实施方式中的反射式TFT阵列面板的方法，所述方法包括：
步骤1、采用物理气相沉积法(PVD)在基板上沉积金属层，通过第一次构图工艺形成栅极、栅线、反射电极连接线和反射电极，在一个实施方式中，第一次构图工艺包括曝光、显影、湿蚀刻和剥离等工序；
步骤2、采用等离子体增强化学气相沉积(PECVD)法在完成步骤1的基板上依次沉积栅绝缘层、有源层和掺杂半导体层，通过第二次构图工艺形成栅绝缘层、有源层和掺杂半导体层的图形，在一个实施方式中，第二次构图工艺即通过曝光、显影、干蚀刻、剥离等工序，去掉不要的材料，留下需要的材料形成栅绝缘层、有源层和掺杂半导体层；
步骤3、采用PVD法在完成步骤2的基板上沉积源漏极金属层，通过第三次构图工艺形成漏极、源极和数据线，在一个实施方式中，第三次构图工艺即通过曝光、显影、湿蚀刻和剥离形成数据线和尚未断开的源漏极，最后通过干刻得到沟道及由沟道隔开的漏极和源极；
步骤4、采用PECVD法在完成步骤3的基板上沉积硅的氮化物或硅的氧化物，得到绝缘保护层，并通过第四次构图工艺形成过孔，即通过曝光、显影、干刻和剥离等工序形成过孔；
步骤5、采用PVD法在完成步骤4的基板上沉积透明导电材料，通过第五次构图工艺形成透明像素电极，在一个实施方式中，第五次构图工艺即通过曝光、显影、湿蚀刻和剥离等工序得到透明像素电极。
虽然反射式TFT阵列面板设置了反射电极，但因反射电极直接设置在基板上，与栅线、栅极同一道工序完成制作，无需增加另外的工序，因此工艺简单、易实现。
在本发明的一个实施方式中，步骤1具体为：采用物理气相沉积法在基板上沉积一层金属，所述金属为钼、铝、铬、银和铜之中的至少一种，通过第一次构图工艺形成栅极、栅线、反射电极连接线和反射电极。
在本发明的一个实施方式中，步骤2中所述栅绝缘层为硅的氮化物或氧化物，所述有源层为非晶硅或石墨烯，所述掺杂半导体层为掺杂非晶硅。
在本发明的一个实施方式中，步骤1中的金属层厚度为
在本发明的一个实施方式中，步骤2中的栅绝缘层厚度为有源层和掺杂半导体层厚度为
在本发明的一个实施方式中，步骤3中的源漏极材料层厚度为
在本发明的一个实施方式中，步骤4中的绝缘保护层厚度为
在本发明的一个实施方式中，步骤5中的透明导电材料厚度为
以上所述的实施方式，并不构成对该技术方案保护范围的限定。任何在上述实施方式的精神和原则之内所作的修改、等同替换和改进等，均应包含在该技术方案的保护范围之内。

Claims (10)

1.一种反射式TFT阵列面板，其特征在于，包括：
基板；
栅极、栅线、反射电极和反射电极连接线，形成于所述基板上；
栅绝缘层，形成于所述栅极、栅线、反射电极和反射电极连接线上；
依次形成于所述栅绝缘层上的有源层和掺杂半导体层，所述有源层和掺杂半导体层位于所述栅极正上方；
源极、漏极和数据线，所述源极和所述漏极形成于所述掺杂半导体层上，所述数据线与所述漏极连接；
绝缘保护层，形成于所述源极、所述漏极和所述数据线上；
透明像素电极，形成于所述绝缘保护层上，通过过孔与所述源极相接；
所述反射电极连接线与所述栅线平行，所述数据线与所述栅线、所述反射电极连接线垂直，且所述栅线、所述反射电极连接线与相邻两根所述数据线在所述基板上的投影形成闭合的矩形，所述反射电极位于所述矩形范围内，且所述反射电极为具有反光性的金属材质。
2.根据权利要求1所述的反射式TFT阵列面板，其特征在于，所述栅极、所述栅线、所述反射电极连接线和所述数据线，皆为具有反光性的金属材质。
3.根据权利要求2所述的反射式TFT阵列面板，其特征在于，所述反射电极具有凹凸不平的表面。
4.根据权利要求2所述的反射式TFT阵列面板，其特征在于，所述反射电极表面设置有多个凸条，相邻的两个所述凸条之间的间距小于80μm。
5.根据权利要求4所述的反射式TFT阵列面板，其特征在于，所述反射电极为金属铝、钼、银、钛、铜和铬中的至少一种。
6.根据权利要求5所述的反射式TFT阵列面板，其特征在于，所述有源层为非晶硅层或石墨烯层。
7.一种液晶显示器，其特征在于，包括彩色滤光片、权利要求1至6任一项所述的反射式TFT阵列面板，以及夹在所述彩色滤光片和所述反射式TFT阵列面板之间的液晶层。
8.一种制备权利要求1所述反射式TFT阵列面板的方法，其特征在于，包括：
步骤1、采用物理气相沉积法在基板上沉积一层金属层，通过第一次构图工艺形成栅极、栅线、反射电极和反射电极连接线；
步骤2、采用等离子体增强化学气相沉积法在完成步骤1的基板上依次沉积栅绝缘层、有源层和掺杂半导体层，通过第二次构图工艺形成栅绝缘层、有源层和掺杂半导体层的图形；
步骤3、采用物理气相沉积法在完成步骤2的基板上沉积源漏极金属层，通过第三次构图工艺形成漏极、源极和数据线；
步骤4、采用等离子体增强化学气相沉积法在完成步骤3的基板上沉积硅的氮化物或硅的氧化物，形成绝缘保护层，并通过第四次构图工艺形成过孔；
步骤5、采用物理气相沉积法在完成步骤4的基板上沉积透明导电材料，通过第五次构图工艺形成透明像素电极。
9.根据权利要求8所述的方法，其特征在于，步骤1具体为：采用物理气相沉积法在基板上沉积一层金属，所述金属为钼、铝、铬、银和铜之中的至少一种，通过第一次构图工艺形成栅极、栅线、反射电极和反射电极连接线。
10.根据权利要求8或9所述的方法，其特征在于，步骤2中所述栅绝缘层为硅的氮化物或氧化物，所述有源层为非晶硅或石墨烯，所述掺杂半导体层为掺杂非晶硅。
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