CN103348447A - 包括其中具有一个或多个氮化硅夹层的氮化镓的半导体晶片 - Google Patents
包括其中具有一个或多个氮化硅夹层的氮化镓的半导体晶片 Download PDFInfo
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- CN103348447A CN103348447A CN2011800650644A CN201180065064A CN103348447A CN 103348447 A CN103348447 A CN 103348447A CN 2011800650644 A CN2011800650644 A CN 2011800650644A CN 201180065064 A CN201180065064 A CN 201180065064A CN 103348447 A CN103348447 A CN 103348447A
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- 239000010410 layer Substances 0.000 title claims abstract description 271
- 239000011229 interlayer Substances 0.000 title claims abstract description 87
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 229910002601 GaN Inorganic materials 0.000 title description 148
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title description 4
- 229910052581 Si3N4 Inorganic materials 0.000 title description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 235000012431 wafers Nutrition 0.000 claims description 108
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- 229910002704 AlGaN Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 13
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- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910004205 SiNX Inorganic materials 0.000 abstract description 5
- 230000012010 growth Effects 0.000 description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
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- 229910021529 ammonia Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 241000156978 Erebia Species 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
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- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
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- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
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- 238000011065 in-situ storage Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
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- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 210000001364 upper extremity Anatomy 0.000 description 1
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Abstract
Description
字母 | 标注 |
A | Mg-掺杂的GaN层 |
B | InGaN/GaN MQW |
C | Si-掺杂的GaN层 |
D | Nid-的掺杂GaN层 |
E | AlGaN缓冲层 |
F | AlN成核层 |
G | Si衬底 |
H | 三维GaN |
I | SiNX夹层(IL) |
层 | 实施例A | 实施例B | 实施例C |
硅衬底 | 625μm | 625μm | 625μm |
AlN成核层 | 200nm | 200nm | 300nm |
AlxGal-xN应力控制层 | 800nm | 680nm | 1300nm |
AlxGal-xN组成 | 0.88<X<0.3 | 0.88<X<0.3 | 0.88<X<0.3 |
GaN下层 | 220nm | 200nm | 400nm |
GaN上层 | 200nm | ||
掺杂的GaN第一层 | 800nm | 550nm | 1100nm |
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PCT/GB2011/001474 WO2012066269A1 (en) | 2010-11-15 | 2011-10-12 | Semiconductor wafer comprising gallium nitride layer having one or more silicon nitride interlayer therein |
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US9142723B2 (en) | 2015-09-22 |
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