CN103311285A - 用于电子装置的电子阻挡层 - Google Patents

用于电子装置的电子阻挡层 Download PDF

Info

Publication number
CN103311285A
CN103311285A CN2013101533634A CN201310153363A CN103311285A CN 103311285 A CN103311285 A CN 103311285A CN 2013101533634 A CN2013101533634 A CN 2013101533634A CN 201310153363 A CN201310153363 A CN 201310153363A CN 103311285 A CN103311285 A CN 103311285A
Authority
CN
China
Prior art keywords
layer
dielectric layer
charge
oxide
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2013101533634A
Other languages
English (en)
Chinese (zh)
Inventor
陈健
拉胡尔.沙兰戈帕尼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/247,917 external-priority patent/US7847341B2/en
Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of CN103311285A publication Critical patent/CN103311285A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/697—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having trapping at multiple separated sites, e.g. multi-particles trapping sites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/683—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being parallel to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CN2013101533634A 2008-10-08 2009-09-24 用于电子装置的电子阻挡层 Pending CN103311285A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/247,917 2008-10-08
US12/247,917 US7847341B2 (en) 2006-12-20 2008-10-08 Electron blocking layers for electronic devices
US12/390,275 2009-02-20
US12/390,275 US8686490B2 (en) 2006-12-20 2009-02-20 Electron blocking layers for electronic devices

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2009801396732A Division CN102171835A (zh) 2008-10-08 2009-09-24 用于电子装置的电子阻挡层

Publications (1)

Publication Number Publication Date
CN103311285A true CN103311285A (zh) 2013-09-18

Family

ID=42100897

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2009801396732A Pending CN102171835A (zh) 2008-10-08 2009-09-24 用于电子装置的电子阻挡层
CN2013101533634A Pending CN103311285A (zh) 2008-10-08 2009-09-24 用于电子装置的电子阻挡层

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN2009801396732A Pending CN102171835A (zh) 2008-10-08 2009-09-24 用于电子装置的电子阻挡层

Country Status (7)

Country Link
US (2) US8686490B2 (enExample)
EP (1) EP2335287A4 (enExample)
JP (1) JP5635518B2 (enExample)
KR (1) KR20110074749A (enExample)
CN (2) CN102171835A (enExample)
TW (1) TWI426598B (enExample)
WO (1) WO2010042323A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107004586A (zh) * 2014-12-01 2017-08-01 高通股份有限公司 兼容高介电常数/金属栅极(hk/mg)的浮置栅极(fg)/铁电偶极子非易失性存储器和逻辑器件

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW546840B (en) 2001-07-27 2003-08-11 Hitachi Ltd Non-volatile semiconductor memory device
US20080150009A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
US8686490B2 (en) 2006-12-20 2014-04-01 Sandisk Corporation Electron blocking layers for electronic devices
US20080150003A1 (en) * 2006-12-20 2008-06-26 Jian Chen Electron blocking layers for electronic devices
US20080150004A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
CN101752237B (zh) * 2008-12-16 2012-08-08 国际商业机器公司 在半导体器件中形成高k栅极叠层的方法
US8692310B2 (en) 2009-02-09 2014-04-08 Spansion Llc Gate fringing effect based channel formation for semiconductor device
US8383479B2 (en) 2009-07-21 2013-02-26 Sandisk Technologies Inc. Integrated nanostructure-based non-volatile memory fabrication
US8298890B1 (en) * 2009-09-03 2012-10-30 Intermolecular, Inc. Charge blocking layers for nonvolatile memories
KR20110048614A (ko) * 2009-11-03 2011-05-12 삼성전자주식회사 게이트 구조물 및 그 형성 방법
KR101624975B1 (ko) 2009-11-17 2016-05-30 삼성전자주식회사 3차원 반도체 기억 소자
US8647946B2 (en) 2009-11-19 2014-02-11 Globalfoundries Singapore Pte. Ltd. Control gate
US8288811B2 (en) 2010-03-22 2012-10-16 Micron Technology, Inc. Fortification of charge-storing material in high-K dielectric environments and resulting apparatuses
JP5629120B2 (ja) * 2010-04-26 2014-11-19 ルネサスエレクトロニクス株式会社 半導体装置
KR101763420B1 (ko) 2010-09-16 2017-08-01 삼성전자주식회사 3차원 반도체 기억 소자 및 그 제조 방법
KR101825539B1 (ko) * 2010-10-05 2018-03-22 삼성전자주식회사 3차원 반도체 장치 및 그 제조 방법
KR101891959B1 (ko) 2012-03-05 2018-08-28 삼성전자 주식회사 비휘발성 메모리 장치 및 그 제조 방법
KR20130127261A (ko) 2012-05-14 2013-11-22 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP6147480B2 (ja) * 2012-09-26 2017-06-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US20140217492A1 (en) * 2013-02-04 2014-08-07 National Tsing Hua University Charge-trap type flash memory device having low-high-low energy band structure as trapping layer
EP2806452B1 (en) * 2013-05-24 2018-12-26 IMEC vzw Non-volatile memory semiconductor devices and method for making thereof
US9812336B2 (en) * 2013-10-29 2017-11-07 Globalfoundries Inc. FinFET semiconductor structures and methods of fabricating same
JP6334268B2 (ja) * 2014-05-30 2018-05-30 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR101663468B1 (ko) * 2014-07-02 2016-10-17 연세대학교 산학협력단 전하 트랩형 플래시 메모리 소자의 동작 방법
US9876123B2 (en) 2014-07-16 2018-01-23 Qualcomm Incorporated Non-volatile one-time programmable memory device
US9641272B2 (en) 2014-10-24 2017-05-02 Qualcomm Incorporated Inter-rat interference cancellation
KR102461082B1 (ko) * 2015-09-22 2022-11-02 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
US20170317142A1 (en) * 2016-04-29 2017-11-02 Western Digital Technologies, Inc. Sidewall insulated resistive memory devices
KR102584288B1 (ko) * 2016-08-03 2023-09-27 삼성전자주식회사 비휘발성 메모리 장치
US10446572B2 (en) 2017-08-11 2019-10-15 Micron Technology, Inc. Void formation for charge trap structures
US10453855B2 (en) 2017-08-11 2019-10-22 Micron Technology, Inc. Void formation in charge trap structures
US10164009B1 (en) 2017-08-11 2018-12-25 Micron Technology, Inc. Memory device including voids between control gates
US10680006B2 (en) 2017-08-11 2020-06-09 Micron Technology, Inc. Charge trap structure with barrier to blocking region
JP7089967B2 (ja) * 2018-07-17 2022-06-23 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN110112073B (zh) * 2019-04-22 2021-09-24 中国科学院微电子研究所 场效应晶体管制备方法及场效应晶体管
US11696521B2 (en) 2019-10-30 2023-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. High electron affinity dielectric layer to improve cycling

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1479356A (zh) * 2002-08-29 2004-03-03 上海宏力半导体制造有限公司 改善硅磊晶层中晶格缺陷的半导体组件制造方法
US20060076606A1 (en) * 2004-10-13 2006-04-13 Bohumil Lojek Method for simultaneous fabrication of a nanocrystal and non-nanocrystal device
US20080150009A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
US7423326B2 (en) * 2002-07-31 2008-09-09 Texas Instruments Incorporated Integrated circuits with composite gate dielectric

Family Cites Families (125)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043940A (en) 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
US5268870A (en) 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
DE69034227T2 (de) 1989-04-13 2007-05-03 Sandisk Corp., Sunnyvale EEprom-System mit Blocklöschung
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5714766A (en) 1995-09-29 1998-02-03 International Business Machines Corporation Nano-structure memory device
US5768192A (en) 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
US5764568A (en) 1996-10-24 1998-06-09 Micron Quantum Devices, Inc. Method for performing analog over-program and under-program detection for a multistate memory cell
US5890192A (en) 1996-11-05 1999-03-30 Sandisk Corporation Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM
US5740104A (en) 1997-01-29 1998-04-14 Micron Technology, Inc. Multi-state flash memory cell and method for programming single electron differences
US6159620A (en) 1997-03-31 2000-12-12 The Regents Of The University Of California Single-electron solid state electronic device
FR2762931B1 (fr) 1997-05-05 1999-06-11 Commissariat Energie Atomique Dispositif a base d'ilots quantiques et procede de fabrication
US20030077625A1 (en) 1997-05-27 2003-04-24 Hutchison James E. Particles by facile ligand exchange reactions
US6054349A (en) 1997-06-12 2000-04-25 Fujitsu Limited Single-electron device including therein nanocrystals
JP3727449B2 (ja) 1997-09-30 2005-12-14 シャープ株式会社 半導体ナノ結晶の製造方法
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6232643B1 (en) 1997-11-13 2001-05-15 Micron Technology, Inc. Memory using insulator traps
US6060895A (en) 1998-04-20 2000-05-09 Fairchild Semiconductor Corp. Wafer level dielectric test structure and related method for accelerated endurance testing
KR100294691B1 (ko) 1998-06-29 2001-07-12 김영환 다중층양자점을이용한메모리소자및제조방법
US6139626A (en) 1998-09-04 2000-10-31 Nec Research Institute, Inc. Three-dimensionally patterned materials and methods for manufacturing same using nanocrystals
WO2001003208A1 (en) 1999-07-02 2001-01-11 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6319775B1 (en) 1999-10-25 2001-11-20 Advanced Micro Devices, Inc. Nitridation process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device
US6407435B1 (en) 2000-02-11 2002-06-18 Sharp Laboratories Of America, Inc. Multilayer dielectric stack and method
AU2001249459A1 (en) 2000-03-24 2001-10-08 The State Of Oregon, Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon Scaffold-organized clusters and electronic devices made using such clusters
US6344403B1 (en) 2000-06-16 2002-02-05 Motorola, Inc. Memory device and method for manufacture
US6413819B1 (en) 2000-06-16 2002-07-02 Motorola, Inc. Memory device and method for using prefabricated isolated storage elements
US6297095B1 (en) 2000-06-16 2001-10-02 Motorola, Inc. Memory device that includes passivated nanoclusters and method for manufacture
US6723606B2 (en) 2000-06-29 2004-04-20 California Institute Of Technology Aerosol process for fabricating discontinuous floating gate microelectronic devices
US6400610B1 (en) * 2000-07-05 2002-06-04 Motorola, Inc. Memory device including isolated storage elements that utilize hole conduction and method therefor
WO2002017362A2 (en) 2000-08-22 2002-02-28 President And Fellows Of Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US6610615B1 (en) 2000-11-15 2003-08-26 Intel Corporation Plasma nitridation for reduced leakage gate dielectric layers
US6576291B2 (en) 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
EP1342075B1 (en) 2000-12-11 2008-09-10 President And Fellows Of Harvard College Device contaning nanosensors for detecting an analyte and its method of manufacture
US6602805B2 (en) 2000-12-14 2003-08-05 Macronix International Co., Ltd. Method for forming gate dielectric layer in NROM
US6942740B2 (en) 2001-01-19 2005-09-13 Jfe Steel Corporation Grain-oriented magnetic steel sheet having no undercoat film comprising forsterite as primary component and having good magnetic characteristics
JP2002217318A (ja) 2001-01-19 2002-08-02 Sony Corp 不揮発性半導体記憶素子及びその製造方法
US6713846B1 (en) 2001-01-26 2004-03-30 Aviza Technology, Inc. Multilayer high κ dielectric films
US6844604B2 (en) 2001-02-02 2005-01-18 Samsung Electronics Co., Ltd. Dielectric layer for semiconductor device and method of manufacturing the same
US7332768B2 (en) 2001-04-27 2008-02-19 Interuniversitair Microelektronica Centrum (Imec) Non-volatile memory devices
KR100408520B1 (ko) 2001-05-10 2003-12-06 삼성전자주식회사 게이트 전극과 단전자 저장 요소 사이에 양자점을구비하는 단전자 메모리 소자 및 그 제조 방법
US6891231B2 (en) 2001-06-13 2005-05-10 International Business Machines Corporation Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier
US20060180851A1 (en) 2001-06-28 2006-08-17 Samsung Electronics Co., Ltd. Non-volatile memory devices and methods of operating the same
US6559014B1 (en) 2001-10-15 2003-05-06 Advanced Micro Devices, Inc. Preparation of composite high-K / standard-K dielectrics for semiconductor devices
US6562491B1 (en) 2001-10-15 2003-05-13 Advanced Micro Devices, Inc. Preparation of composite high-K dielectrics
US6656792B2 (en) 2001-10-19 2003-12-02 Chartered Semiconductor Manufacturing Ltd Nanocrystal flash memory device and manufacturing method therefor
FR2834242B1 (fr) 2001-12-31 2004-07-02 Memscap Structure multicouche, utilisee notamment en tant que materiau de forte permittivite relative
US6674138B1 (en) 2001-12-31 2004-01-06 Advanced Micro Devices, Inc. Use of high-k dielectric materials in modified ONO structure for semiconductor devices
KR100459895B1 (ko) 2002-02-09 2004-12-04 삼성전자주식회사 퀀텀 도트를 가지는 메모리 소자 및 그 제조방법
US6586349B1 (en) 2002-02-21 2003-07-01 Advanced Micro Devices, Inc. Integrated process for fabrication of graded composite dielectric material layers for semiconductor devices
US6642573B1 (en) 2002-03-13 2003-11-04 Advanced Micro Devices, Inc. Use of high-K dielectric material in modified ONO structure for semiconductor devices
US6717226B2 (en) 2002-03-15 2004-04-06 Motorola, Inc. Transistor with layered high-K gate dielectric and method therefor
US6872645B2 (en) 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US6750066B1 (en) 2002-04-08 2004-06-15 Advanced Micro Devices, Inc. Precision high-K intergate dielectric layer
US6888739B2 (en) 2002-06-21 2005-05-03 Micron Technology Inc. Nanocrystal write once read only memory for archival storage
US7005697B2 (en) 2002-06-21 2006-02-28 Micron Technology, Inc. Method of forming a non-volatile electron storage memory and the resulting device
US7154140B2 (en) 2002-06-21 2006-12-26 Micron Technology, Inc. Write once read only memory with large work function floating gates
US6996009B2 (en) 2002-06-21 2006-02-07 Micron Technology, Inc. NOR flash memory cell with high storage density
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6753570B1 (en) 2002-08-20 2004-06-22 Advanced Micro Devices, Inc. Memory device and method of making
US7468146B2 (en) * 2002-09-12 2008-12-23 Agfa-Gevaert Metal chalcogenide composite nano-particles and layers therewith
JP2004111756A (ja) 2002-09-19 2004-04-08 Mitsui Chemicals Inc 磁性複合体、磁性複合材料
US20040144972A1 (en) 2002-10-04 2004-07-29 Hongjie Dai Carbon nanotube circuits with high-kappa dielectrics
US7259984B2 (en) 2002-11-26 2007-08-21 Cornell Research Foundation, Inc. Multibit metal nanocrystal memories and fabrication
US6753224B1 (en) 2002-12-19 2004-06-22 Taiwan Semiconductor Manufacturing Company Layer of high-k inter-poly dielectric
DE10260334B4 (de) * 2002-12-20 2007-07-12 Infineon Technologies Ag Fin-Feldeffektransitor-Speicherzelle, Fin-Feldeffekttransistor-Speicherzellen-Anordnung und Verfahren zum Herstellen einer Fin-Feldeffektransistor-Speicherzelle
JP2004275068A (ja) 2003-03-14 2004-10-07 Seiko Epson Corp 薬剤放散装置
JP2004281662A (ja) 2003-03-14 2004-10-07 Toshiba Corp 半導体記憶装置及びその製造方法
JP4040534B2 (ja) 2003-06-04 2008-01-30 株式会社東芝 半導体記憶装置
US7297634B2 (en) 2003-06-06 2007-11-20 Marvell World Trade Ltd. Method and apparatus for semiconductor device and semiconductor memory device
US7550800B2 (en) * 2003-06-06 2009-06-23 Chih-Hsin Wang Method and apparatus transporting charges in semiconductor device and semiconductor memory device
US7045851B2 (en) 2003-06-20 2006-05-16 International Business Machines Corporation Nonvolatile memory device using semiconductor nanocrystals and method of forming same
KR100703833B1 (ko) 2003-06-30 2007-04-05 주식회사 하이닉스반도체 이중 유전막을 구비한 캐패시터의 제조 방법
US6951782B2 (en) 2003-07-30 2005-10-04 Promos Technologies, Inc. Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions
KR101132076B1 (ko) 2003-08-04 2012-04-02 나노시스, 인크. 나노선 복합체 및 나노선 복합체로부터 전자 기판을제조하기 위한 시스템 및 프로세스
KR100541551B1 (ko) 2003-09-19 2006-01-10 삼성전자주식회사 적어도 3층의 고유전막들을 갖는 아날로그 커패시터 및그것을 제조하는 방법
US7012299B2 (en) 2003-09-23 2006-03-14 Matrix Semiconductors, Inc. Storage layer optimization of a nonvolatile memory device
EP1671365B1 (en) 2003-10-06 2018-12-05 Massachusetts Institute Of Technology Non-volatile memory device
KR100579844B1 (ko) 2003-11-05 2006-05-12 동부일렉트로닉스 주식회사 비휘발성 메모리 소자 및 그 제조방법
KR100639673B1 (ko) 2003-12-22 2006-10-30 삼성전자주식회사 고유전 합금으로 이루어지는 게이트 유전막을 구비하는반도체 소자 및 그 제조 방법
US20050181619A1 (en) 2004-02-12 2005-08-18 National Taiwan University Method for forming metal oxide layer by nitric acid oxidation
US20050202615A1 (en) 2004-03-10 2005-09-15 Nanosys, Inc. Nano-enabled memory devices and anisotropic charge carrying arrays
US7595528B2 (en) 2004-03-10 2009-09-29 Nanosys, Inc. Nano-enabled memory devices and anisotropic charge carrying arrays
JP2005277171A (ja) 2004-03-25 2005-10-06 Toshiba Corp 半導体装置およびその製造方法
JP2005317647A (ja) 2004-04-27 2005-11-10 Toshiba Corp 半導体装置及びその製造方法
US7776758B2 (en) 2004-06-08 2010-08-17 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
TWI406890B (zh) 2004-06-08 2013-09-01 Sandisk Corp 奈米結構之沉積後包封：併入該包封體之組成物、裝置及系統
JP2006005006A (ja) 2004-06-15 2006-01-05 Toshiba Corp 不揮発性半導体メモリ装置
JP2006005313A (ja) 2004-06-21 2006-01-05 Toshiba Corp 半導体装置及びその製造方法
US7138680B2 (en) 2004-09-14 2006-11-21 Infineon Technologies Ag Memory device with floating gate stack
KR100688575B1 (ko) * 2004-10-08 2007-03-02 삼성전자주식회사 비휘발성 반도체 메모리 소자
JP4784065B2 (ja) 2004-10-28 2011-09-28 ソニー株式会社 キャパシタおよびキャパシタの製造方法および半導体装置
US7365389B1 (en) 2004-12-10 2008-04-29 Spansion Llc Memory cell having enhanced high-K dielectric
US7479425B2 (en) 2005-01-20 2009-01-20 Chartered Semiconductor Manufacturing, Ltd Method for forming high-K charge storage device
US7361567B2 (en) 2005-01-26 2008-04-22 Freescale Semiconductor, Inc. Non-volatile nanocrystal memory and method therefor
KR101078125B1 (ko) 2005-02-07 2011-10-28 삼성전자주식회사 다공성 물질을 이용한 비휘발성 나노 채널 메모리 소자
US7352631B2 (en) 2005-02-18 2008-04-01 Freescale Semiconductor, Inc. Methods for programming a floating body nonvolatile memory
JP2006229044A (ja) 2005-02-18 2006-08-31 Toshiba Corp 半導体装置
KR100652402B1 (ko) 2005-02-21 2006-12-01 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
US7217643B2 (en) 2005-02-24 2007-05-15 Freescale Semiconductors, Inc. Semiconductor structures and methods for fabricating semiconductor structures comprising high dielectric constant stacked structures
US20060231889A1 (en) 2005-04-13 2006-10-19 Tupei Chen Two-terminal solid-state memory device and two-terminal flexible memory device based on nanocrystals or nanoparticles
WO2006112793A1 (en) 2005-04-20 2006-10-26 National University Of Singapore Nonvolatile flash memory device and method for producing the same
US20060275975A1 (en) 2005-06-01 2006-12-07 Matt Yeh Nitridated gate dielectric layer
KR100690911B1 (ko) * 2005-07-18 2007-03-09 삼성전자주식회사 2비트 메모리 셀을 포함하는 비휘발성 반도체 집적 회로장치 및 그 제조 방법
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7576386B2 (en) * 2005-08-04 2009-08-18 Macronix International Co., Ltd. Non-volatile memory semiconductor device having an oxide-nitride-oxide (ONO) top dielectric layer
US7575978B2 (en) * 2005-08-04 2009-08-18 Micron Technology, Inc. Method for making conductive nanoparticle charge storage element
CA2618883A1 (en) 2005-08-19 2007-03-01 Nanosys, Inc. Electronic grade metal nanostructures
US7629641B2 (en) 2005-08-31 2009-12-08 Micron Technology, Inc. Band engineered nano-crystal non-volatile memory device utilizing enhanced gate injection
KR100648860B1 (ko) 2005-09-08 2006-11-24 주식회사 하이닉스반도체 유전막 및 그 형성방법과, 상기 유전막을 구비한 반도체메모리 소자 및 그 제조방법
US20070056925A1 (en) 2005-09-09 2007-03-15 Lam Research Corporation Selective etch of films with high dielectric constant with H2 addition
KR100784860B1 (ko) 2005-10-31 2007-12-14 삼성전자주식회사 비휘발성 메모리 장치 및 그 제조 방법
JP4936790B2 (ja) * 2006-05-22 2012-05-23 株式会社東芝 半導体装置
KR101443731B1 (ko) 2006-12-20 2014-09-23 쌘디스크 코포레이션 전자 디바이스용 전자 차단 층
TWI361494B (en) * 2006-12-20 2012-04-01 Nanosys Inc Electron blocking layers for electronic devices
US8686490B2 (en) 2006-12-20 2014-04-01 Sandisk Corporation Electron blocking layers for electronic devices
US20080150003A1 (en) 2006-12-20 2008-06-26 Jian Chen Electron blocking layers for electronic devices
US20080150004A1 (en) 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
JP4372174B2 (ja) * 2007-03-28 2009-11-25 株式会社東芝 不揮発性半導体メモリ及びその製造方法
US7816727B2 (en) * 2007-08-27 2010-10-19 Macronix International Co., Ltd. High-κ capped blocking dielectric bandgap engineered SONOS and MONOS
US20090078989A1 (en) * 2007-09-21 2009-03-26 Samsung Electronics Co., Ltd. Method of forming silicon nitride at low temperature, charge trap memory device including crystalline nano dots formed by using the same, and method of manufacturing the charge trap memory device
JP4594973B2 (ja) * 2007-09-26 2010-12-08 株式会社東芝 不揮発性半導体記憶装置
WO2009053779A1 (en) * 2007-10-23 2009-04-30 Freescale Semiconductor, Inc. Method for manufacturing a non-volatile memory, nonvolatile memory device, and an integrated circuit
WO2009136906A1 (en) * 2008-05-05 2009-11-12 Hewlett-Packard Development Company, L.P. Nanowire-based photodiode
US20090309150A1 (en) * 2008-06-13 2009-12-17 Infineon Technologies Ag Semiconductor Device And Method For Making Semiconductor Device
US8735963B2 (en) * 2008-07-07 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Flash memory cells having leakage-inhibition layers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7423326B2 (en) * 2002-07-31 2008-09-09 Texas Instruments Incorporated Integrated circuits with composite gate dielectric
CN1479356A (zh) * 2002-08-29 2004-03-03 上海宏力半导体制造有限公司 改善硅磊晶层中晶格缺陷的半导体组件制造方法
US20060076606A1 (en) * 2004-10-13 2006-04-13 Bohumil Lojek Method for simultaneous fabrication of a nanocrystal and non-nanocrystal device
US20080150009A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107004586A (zh) * 2014-12-01 2017-08-01 高通股份有限公司 兼容高介电常数/金属栅极(hk/mg)的浮置栅极(fg)/铁电偶极子非易失性存储器和逻辑器件

Also Published As

Publication number Publication date
JP2012505546A (ja) 2012-03-01
US20140183613A1 (en) 2014-07-03
CN102171835A (zh) 2011-08-31
EP2335287A4 (en) 2014-01-01
TWI426598B (zh) 2014-02-11
EP2335287A1 (en) 2011-06-22
US8686490B2 (en) 2014-04-01
TW201025575A (en) 2010-07-01
US9214525B2 (en) 2015-12-15
KR20110074749A (ko) 2011-07-01
WO2010042323A1 (en) 2010-04-15
US20090212351A1 (en) 2009-08-27
JP5635518B2 (ja) 2014-12-03

Similar Documents

Publication Publication Date Title
US8686490B2 (en) Electron blocking layers for electronic devices
CN101589461B (zh) 用于电子装置的电子阻断层
US7847341B2 (en) Electron blocking layers for electronic devices
EP1936672A1 (en) Electron blocking layers for gate stacks of nonvolatile memory devices
KR100995741B1 (ko) 불휘발성 반도체 메모리 장치
US8030161B2 (en) Gate electrode for a nonvolatile memory cell
KR20180037167A (ko) 비휘발성 메모리 소자 및 이의 제조방법
EP2166571B1 (en) Memory device and its reading method
US20080150004A1 (en) Electron Blocking Layers for Electronic Devices
KR101443731B1 (ko) 전자 디바이스용 전자 차단 층
TWI361494B (en) Electron blocking layers for electronic devices
Panda et al. Non-volatile flash memory characteristics of tetralayer nickel-germanide nanocrystals embedded structure
KR101006868B1 (ko) 멀티 비트 비휘발성 메모리 소자
KR101071520B1 (ko) 금속 실리사이드 입자를 구비하는 비휘발성 메모리 소자의 제조방법
Das et al. Ruthenium oxide metal nanocrystal capacitors with high-κ dielectric tunneling barriers for nanoscale nonvolatile memory device applications
Jang et al. Memory properties of nickel silicide nanocrystal layer for possible application to nonvolatile memory devices
KR20100043342A (ko) 금속 실리사이드 입자를 구비하는 비휘발성 메모리 소자의 제조방법
KR20080054709A (ko) 비휘발성 메모리 소자 및 그 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130918