CN103199077A - 模塑插入层封装及其制造方法 - Google Patents
模塑插入层封装及其制造方法 Download PDFInfo
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- CN103199077A CN103199077A CN2013100020087A CN201310002008A CN103199077A CN 103199077 A CN103199077 A CN 103199077A CN 2013100020087 A CN2013100020087 A CN 2013100020087A CN 201310002008 A CN201310002008 A CN 201310002008A CN 103199077 A CN103199077 A CN 103199077A
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- metal
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- molding insert
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Abstract
本发明提供一种模塑插入层封装及其制造方法。模塑插入层封装包括多个金属块;模塑料,包裹该多个金属块,使该多个金属块的多个底面暴露出来;第一芯片,设置于该模塑料上,且连接至该多个金属块的多个顶面;多个焊球,连接且接触该多个金属块的该多个底面。本发明所提出的模塑插入层封装可减少高工艺成本。
Description
技术领域
本发明是有关于一种插入层封装(interposer package)及其制造方法,特别是有关于一种模塑插入层封装(molded interposer package)及其制造方法。
背景技术
插入层为电接口,其在连接座之间绕线或将一个连接座连接至另一个连接座。插入层的目的是加宽芯片的凸块到连线的间距,或将连线重新绕线。现有技术中的插入层工艺首先提供利用堆迭双马来酰亚胺-三氮杂苯树脂(bismaleimide triacine,BT)形成的树脂基核心基板(resin-based core substrate)。接着,依序进行穿孔刻蚀(through via etching)工艺、绝缘物氧化(insulation oxidation)工艺、金属填充(metal filling)工艺、多层接线(multilayer wiring)工艺、防焊层(solder mask)工艺、微凸块(micro bumping)工艺、芯片安装(chip mounting)工艺和模套(mold cap)工艺。值得注意的是,现有技术中的核心基板和穿孔为复合结构。现有技术中的多层接线工艺和防焊层工艺需要在核心基板的两侧上形成互连结构和防焊层。为了增加封装刚性,现有技术中需要模套(mold cap)工艺。因此,由于前述的复杂工艺,现有技术中的插入层的工艺成本高。另外,现有技术中的树脂基核心基板因为其机械强度不佳,所以仅能制作成小尺寸。前述的缺点会限制插入层技术的发展。并且,现有技术中的插入层遭受许多设计挑战。举例来说,现有技术中插入层难以对核心基板和输入/输出(I/O)提供适当的电源传输网络,且上述电源传输网络包括对较宽的电源线(wider power traces)、专用的电源层(dedicated power planes)、专用的电源岛状物(dedicated power islands)和直接贴附在板上的去耦合电容(on-board decoupling capacitors)的选择。并且,现有技术中插入层难以对并排(side-by-side)、层叠封装(package-on-package,POP)、与层叠封装并排(side-by-POP)的动态随机存储器总线(DRAM memory bus)提供配置选择,而且难以改善穿过基板和焊球的导热。并且,现有技术中插入层难以对芯片上散热器(chip-on heat spreader)提供选择。再者,现有技术中插入层难以维持现今电路板(printed circuit boar,PCB)客户的电路密度的限制。此外,现有技术中插入层难以对多重芯片(multi-die)和混合接线(hybrid wire bonding)提供配置选择。
因此,在此技术领域中,提出一种新的插入层封装结构。
发明内容
有鉴于此,本发明提出一种模塑插入层封装及其制造方法。
依据本发明第一实施方式,提供一种模塑插入层封装,包括多个金属块;模塑料,包裹该多个金属块,使该多个金属块的多个底面暴露出来;第一芯片,设置于该模塑料上,并连接至该多个金属块的多个顶面;多个焊球,连接且接触该多个金属块的该多个底面。
依据本发明第二实施方式,提供一种模塑插入层封装的制造方法,包括提供金属片,其具有顶面和底面;进行第一各向异性刻蚀工艺,以从该金属片的该顶面移除一部分该金属片,因而在该金属片中形成多个第一凹陷;将载板安装在该金属片的该顶面,覆盖该多个第一凹陷;进行第二各向异性刻蚀工艺,以从该金属片的该底面移除位于该多个第一凹陷下的一部分该金属片,因而在该金属片中形成多个第二凹陷,其中该多个第一凹陷和该多个第二凹陷分别彼此互连;从该金属片的该底面填入模塑料至该多个第一凹陷和该多个第二凹陷,并使该金属片的该底面暴露出来;移除该载板;在该金属片的该顶面上形成保护层,该保护层具有穿过该保护层的多个开口;形成穿过该多个开口的多个第金属通孔;在该保护层上形成防焊层,并使该多个第一金属通孔暴露出来。
依据本发明第三实施方式,提供一种模塑插入层封装的制造方法,包括提供金属片,其具有顶面和底面;进行第一各向异性刻蚀工艺,以从该金属片的该顶面移除一部分该金属片,因而在该金属片中形成多个第一凹陷;形成模塑料,覆盖该金属片的该顶面,且填入该多个第一凹陷;在该模塑料中形成多个开口,其中该多个开口暴露该金属片的该顶面;在该多个开口内形成多个第一金属通孔,且分别在该多个第一金属通孔上形成多个第一重布线层图案;进行第二各向异性刻蚀工艺,以从该金属片的该底面移除一部分该金属片,直到暴露出该模塑料的底面,其中刻蚀后的该金属片转变成为多个金属块;在该模塑料上形成防焊层,并使该多个第一重布线层图案暴露出来。
依据本发明第四实施方式,提供一种模塑插入层封装的制造方法,包括提供金属片,其具有顶面和底面;将载板安装在该金属片的该底面;进行各向异性刻蚀工艺,以从该金属片的该顶面移除一部分该金属片,直到暴露出该载板,因而形成穿过该金属片的多个通孔,其中刻蚀后的该金属片转变成为多个金属块;从该多个通孔中填入模塑料,使该多个金属块的该顶面暴露出来;移除该载板;在该多个金属块的该顶面上形成保护层,该保护层具有多个开口,穿过该保护层;形成穿过该多个开口的多个第一金属通孔;在该保护层上形成防焊层,并使该多个金属通孔暴露出来。
依据本发明第五实施方式,提供一种模塑插入层封装的制造方法,包括提供模具;在该模具中装载多个金属块,其中该多个金属块的多个上部和多个下部分别被该模具夹紧;在该模具中填入模塑料,以包裹该多个金属块;移除该模具,使该多个金属块的该多个上部和该多个下部暴露出来;移除超出该模塑料的顶面和底面上方的暴露出来的该多个金属块的该多个上部和该多个下部;在该模塑料的该顶面上形成保护层,该保护层具有多个开口,穿过该保护层;形成穿过该多个开口的多个第一金属通孔;在该保护层上形成防焊层,并使该多个第一金属通孔暴露出来。
本发明所提出的模塑插入层封装及其制造方法,可减少高工艺成本。
附图说明
图1为根据本发明的实施方式的模塑插入层封装的剖面图。
图2-9为根据本发明的不同实施方式的模塑插入层封装的剖面图。
图10为根据本发明的实施方式的模塑插入层封装的基板的上视图。
图11a-11i为根据本发明的实施方式的模塑插入层封装的制造方法的剖面图。
图12a-12f为根据本发明另一个实施方式的模塑插入层封装的制造方法的剖面图。
图13a-13g为根据本发明又一个实施方式的模塑插入层封装的制造方法的剖面图。
图14a-14g为根据本发明又一个实施方式的模塑插入层封装的制造方法的剖面图。
图15a-15g为根据本发明又一个实施方式的模塑插入层封装的制造方法的剖面图
具体实施方式
以下结合附图说明详细描述本发明各实施方式,作为本发明的参考依据。在附图或说明书描述中,相似或相同的部分都使用相同的图号。且在附图中,实施方式的形状或是厚度可扩大,并以简化或是方便标示。再者,附图中各元件的部分将分别描述说明,值得注意的是,图中未绘示或描述的元件,为本领域技术人员所知的形式,另外,特定的实施方式仅为揭示本发明使用的特定方式,其并非用以限定本发明。
图1为根据本发明的实施方式的模塑插入层封装500a的剖面图。如图1所示,本发明的一个实施方式的模塑插入层封装500a包括模塑插入层(moldedbuilder interposer,MBI)200。上述模塑插入层200包括基板600。上述基板600包括多个金属块(metal stud)202和包裹金属块202的模塑料(moldingmaterial)204。上述金属块202彼此隔绝。在本发明的一个实施方式中,每一个金属块202为一体模塑结构(all-in-one structure),且排列为阵列。另外,上述金属块202可由铜(Cu)形成。模塑料204包裹金属块202,且让金属块202的底面232暴露出来。在本发明的一个实施方式中,模塑料204可由例如树脂(resin)的模塑材料形成。另外,上述模塑料204为一体模塑结构(all-in-one structure)。在本发明的一个实施方式中,金属块202的顶面230可充当模塑插入层200的互连焊盘(interconnect pad),其用于连接至少一个芯片(例如,如图1所示的芯片222),且金属块202的底面232可充当锡球焊盘(ball pad),其用于连接印刷电路板(printed circuit boar,PCB)(图未显示)的焊盘。因此,基板600的顶面234可充当模塑插入层200的芯片侧表面(chip-side surface),且基板600的底面236可充当模塑插入层200的印刷电路板侧表面(PCB-side surface)。在本发明的一个实施方式中,金属块202的顶面230可低于模塑料204的顶面或与模塑料204的顶面共平面,且金属块202的底面232可位于模塑料204底面的上方或与模塑料204的底面共平面。
在本发明的一个实施方式中,设置于模塑插入层200的芯片侧表面上的重布线层图案(RDL pattern)、介电层和金属通孔可共同充当模塑插入层200的互连结构,且上述互连结构用于电性连接模塑插入层200和设置于模塑插入层200上的芯片222。如图1所示,穿过一部分模塑料204的多个第一金属通孔206位于金属块202的正上方。在本发明的其他实施方式中,第一金属通孔206可穿过覆盖基板600顶面234(即模塑料204的顶面)的保护层(图未显示)而形成。第一重布线层图案208设置于模塑料204和芯片222之间,且电性连接至金属块202和芯片222。具体来说,第一重布线层图案208设置于第一金属通孔206上。如图1所示,第一金属通孔206连接金属块202的顶面230和第一重布线层图案208。另外,介电层210,其也充当重布线层介电层(RDL dielectric layer),覆盖第一重布线层图案208。在本发明的其他实施方式中,互连结构可包括单层或多层重布线层图案。在如图1所示的本发明的一个实施方式中,上述互连结构可包括穿过介电层210连接至第一重布线层图案208的多个第二金属通孔212,以及覆盖且连接至第二金属通孔212的第二重布线层图案214。防焊层(soldermask layer)216设置于上述互连结构的顶部,例如防焊层216设置于第二重布线层图案214之上。在本发明的一个实施方式中,防焊层216可设置于第一重布线层图案208和芯片222之间。在本发明的另一个实施方式中,防焊层(soldermask layer)216位于模塑料204之上且为模塑插入层200的最上层。芯片222设置于基板600的芯片侧表面(即顶面234)上,且连接至防焊层216的顶面。如图1所示,芯片222具有多个导电凸块220,穿过防焊层216以连接至上述互连结构。详细来说,芯片222的导电凸块220可直接连接至最上层的重布线层图案,举例来说,导电凸块220可连接至本实施方式的第一重布线层图案208或第二重布线层图案214。因此,芯片222通过导电凸块220和上述互连结构连接至金属块202的顶面230。在本发明的一个实施方式中,导电凸块220包括多个焊球、多个金属柱或上述组合。此外,底胶材料218设置于防焊层216和芯片222之间。在本发明的一个实施方式中,值得注意的是,出于封装刚性考虑,模塑插入层封装500a已经使用模塑料(例如模塑料204)包裹金属块202。因此,不需任何模塑料来覆盖芯片222和防焊层216。
在本发明的一个实施方式中,多个焊球224设置于基板600的印刷电路板侧表面(即底面236)上,用以电性连接模塑插入层200和印刷电路板(图未显示)。如图1所示,焊球224分别连接且接触金属块202的底面232。值得注意的是,基板600的底面236(即模塑料204的底面)未被任何防焊层或任何重布线层覆盖。
图2-9为根据本发明的不同实施方式的模塑插入层封装500b~500i的剖面图。在本发明另一个实施方式中,模塑插入层封装可承载至少一个额外的电子元件。如图2所示,模塑插入层封装500b可进一步包括与芯片222隔开的电子元件,举例来说,表面黏着元件(surface mount technology(SMT)device)238,设置于基板600的顶面234上。上述分离的电子元件通过互连结构电性连接至金属块202,且上述互连结构包括多个重布线层图案(包括如图1所示的第一重布线层图案208和第二重布线层图案214)和多个金属通孔(包括如图1所示的第一金属通孔206和第二金属通孔212)。为了方便说明起见,本实施方式仅显示第一重布线层图案208和第一金属通孔206。
在本发明的另一个实施方式中,模塑插入层封装可增加散热物,以进一步对封装结构散热。如图3所示,模塑插入层封装500c进一步包括散热物240,覆盖芯片222的顶面以及包括多个重布线层图案(包括如图1所示的第一重布线层图案208和第二重布线层图案214)和多个金属通孔(包括如图1所示的第一金属通孔206和第二金属通孔212)的互连结构。为了方便说明起见,本实施方式仅显示第一重布线层图案208和第一金属通孔206。在本发明的一个实施方式中,散热物240可包括金属。
在本发明其他实施方式中,为了进一步提升封装刚性,也可在模塑插入层封装上设置模套(mold cap)。如图4所示,模塑插入层封装500d可进一步包括模套242,覆盖芯片222以及包括多个重布线层图案(包括如图1所示的第一重布线层图案208和第二重布线层图案214)和多个金属通孔(包括如图1所示的第一金属通孔206和第二金属通孔212)的互连结构。为了方便说明起见,本实施方式仅显示第一重布线层图案208和第一金属通孔206。
在本发明的另一个实施方式中,模塑插入层封装可构成系统级封装(system-in-package,SIP)。换句话说,模塑插入层封装可承载数个芯片。如图5所示,模塑插入层封装500e可进一步包括芯片246或芯片248,设置于芯片222旁。并且,模塑插入层封装500e可进一步包括芯片244,设置于芯片222的正上方。模塑插入层封装500e的芯片可使用引线接合法或覆晶技术,以连接至包括多个重布线层图案(包括如图1所示的第一重布线层图案208和第二重布线层图案214)和多个金属通孔(包括如图1所示的第一金属通孔206和第二金属通孔212)的互连结构。为了方便说明起见,本实施方式仅显示第一重布线层图案208和第一金属通孔206。如图5所示,可利用覆晶技术,通过导电凸块250将芯片246连接至互连结构。在本发明其他实施方式中,设置于芯片222正上方的芯片244和设置于芯片222旁的芯片248,可分别通过焊线(bonding wire)252和焊线254连接至互连结构。
如图6、7所示,在本发明的又一个实施方式中,模塑插入层封装可构成层叠封装(package-on-package,POP)。换句话说,模塑插入层封装可允许另一个半导体封装设置于其上。如图6所示,模塑插入层封装500f可进一步包括半导体封装256,设置于模塑插入层200和芯片222上。半导体封装256与芯片222隔开。并且,半导体封装256可通过多个导电凸块258连接至互连结构,其中互连结构包括多个重布线层图案(例如,包括如图1所示的第一重布线层图案208和第二重布线层图案214)和多个金属通孔(例如,包括如图1所示的第一金属通孔206和第二金属通孔212)。为了方便说明起见,本实施方式仅显示第一重布线层图案208和第一金属通孔206。
如图7所示,模塑插入层封装500g可进一步包括半导体封装260,设置于芯片222旁,且位于模塑插入层200上。而且,半导体封装260与芯片222隔开。并且,半导体封装260可通过多个导电凸块262连接至互连结构,其中互连结构包括多个重布线层图案(例如,包括如图1所示的第一重布线层图案208和第二重布线层图案214)和多个金属通孔(例如,包括如图1所示的第一金属通孔206和第二金属通孔212)。为了方便说明起见,本实施方式仅显示第一重布线层图案208和第一金属通孔206。
在本发明的又一个实施方式中,为了增加电路设计的弹性以达到多重芯片封装的目的,模塑插入层封装可包括另一个硅插入层(silicon interposer),设置于模塑插入层和芯片之间。如图8所示,模塑插入层封装500h可进一步包括硅插入层276,设置于模塑插入层200上,即硅插入层276设置于金属块202的顶面234上。硅插入层276电性连接至模塑插入层200。举例来说,硅插入层276分别电性连接至金属块202和芯片264、芯片266、芯片268。具体来说,多个彼此隔开的芯片264、芯片266、芯片268设置于硅插入层276上。可用表面黏着技术或覆晶技术,将模塑插入层封装500h的硅插入层276上的芯片连接至硅插入层276。举例来说,可使用覆晶技术,通过导电凸块270将芯片264连接至硅插入层276。可使用表面黏着技术,分别通过导电凸块272、导电凸块274将芯片266、芯片268连接至硅插入层276。值得注意的是,上述模塑插入层封装500h的制造可不需要如图1所示的互连结构,上述互连结构包括多个重布线层图案(包括第一重布线层图案208和第二重布线层图案214)和多个金属通孔(包括第一金属通孔206和第二金属通孔212)。此外,模塑插入层封装500h也可包括介于模塑插入层200和硅插入层276之间的互连结构。
在本发明其他实施方式中,用于模塑插入层封装的模塑插入层的电源传输的金属块也可充当散热物。如图9所示,用于模塑插入层封装500i的电源传输的至少两个金属块202a和202b可设计为互相接触,以形成金属岛状结构(metalisland structure)280。因为金属岛状结构280由例如铜的金属形成,所以金属岛状结构280具有优异的散热能力。因此,金属岛状结构280不仅可充当电源传输物,而且可充当模塑插入层封装500i的额外散热物。
图10为根据本发明的实施方式的模塑插入层封装的基板600a的上视图,其显示金属块的另一种设计。在金属块工艺期间,可将额外元件设计于基板内。上述额外元件可具有散热或增强封装刚性的功能。为了增强封装刚性和封装平整度,基板600a可进一步包括穿过模塑料204的框型金属加固物282,其中框型金属加固物282的内侧壁292围绕金属块202。在本发明实施方式中,框型金属加固物282可与基板600a的边界205平行。多个金属鳍284,可设置于框型金属加固物282的外侧壁294上以进一步对封装散热。如图10所示,金属鳍284可从模塑料204的边界205暴露出来。在本发明其他实施方式中,金属鳍284可突出于模塑料204的边界205。因为框型金属加固物282配置接近于模塑料204的边界205,所以框型金属加固物282和金属鳍284可一起构成三维(three-dimensional,3D)散热物,将热迅速地散发至外界。并且,为了进一步增强封装刚性和封装平整度,可形成金属加固条288,穿过模塑料204,连接至框型金属加固物282的相邻两侧。再者,可将电源/接地垫290设计为位于基板600a的中央。电源/接地垫290提供芯片和印刷电路板(printed circuit boar,PCB)之间的电源/接地互连。如图10所示,电源/接地垫290的面积设计为大于每一个金属块202的面积,以提供良好的电源性能和额外的散热通道。
在本发明的一个实施方式中,金属块202、框型金属加固物282、金属鳍284、金属加固条288和电源/接地垫290可由例如铜的相同材料形成。
图11a-11i为根据本发明的实施方式的模塑插入层封装的制造方法的剖面图。并且,如图11a-11i所示的模塑插入层封装的制造方法也可称为双面刻蚀工艺(dual etch process)。如图11a所示,首先,提供金属片300,其具有顶面302和底面304。在本发明的一个实施方式中,金属片300的顶面302可充当模塑插入层封装的模塑插入层的芯片侧表面(chip-side surface)。金属片300的底面304可充当模塑插入层封装的模塑插入层的印刷电路板侧表面(PCB-side surface)。在本发明的一个实施方式中,金属片300具有一体模塑结构(all-in-one structure)。金属片300可由铜形成。接着,请参考图11b,可进行微影工艺和各向异性刻蚀工艺,以从金属片300的顶面302移除一部分金属片300,因而在金属片300中形成多个第一凹陷306。值得注意的是,第一凹陷306的底面位于金属片300内。进行各向异性刻蚀工艺之后,金属片300的上部会转变成为多个台面(mesa)308,位于第一凹陷306之间。台面308具有顶面302a,而顶面302a可充当模塑插入层的互连焊盘(interconnect pad)。
接着,请参考图11c,将载板310安装在金属片300的台面308的顶面302a,覆盖第一凹陷306,让金属片300的底面304暴露出来。接着,请参考图11d,可进行微影工艺和各向异性刻蚀工艺,以从金属片300的底面304移除位于第一凹陷306下方的一部分金属片300,因而在金属片300中形成多个第二凹陷312,其中第一凹陷306和第二凹陷312分别彼此互连。形成第二凹陷312之后,金属片300的下部会转变成为多个台面314,位于第二凹陷312之间。台面314具有底面304a,而底面304a可充当模塑插入层的锡球焊盘(ball pad)。经过上述工艺之后,形成多个分离的金属块330,每一个金属块330包括台面308和台面314。并且,台面308的顶面302a可充当金属块330的顶面302a,而台面314的底面304a可充当金属块330的底面304a。
值得注意的是,利用双面刻蚀金属片300的方式制造的金属块330具有一体模塑结构(all-in-one structure)。并且,相较于现有技术中的工艺,具有一体模塑结构的金属块330具有改善的刚性。因此,最终形成的模塑插入层封装可制造为更大的尺寸,以达到全尺寸平板封装(full-size panel package)的要求。
接着,请参考图11e,模塑料316从金属片330的底面304a填入第一凹陷306和第二凹陷312。可使用例如化学机械抛光法(chemical mechanical polishing,CMP)的平坦化工艺(planarization process),平坦化模塑料316,并让金属块330的底面304a暴露出来。在本发明的一个实施方式中,模塑料316可包括树脂(resin)。上述模塑料316具有一体模塑结构(all-in-one structure)。接着,请参考图11f,填入模塑料316之后,移除载板310。因此,形成由金属块330和模塑料316构成的基板600b。并且,基板600b的每一个金属块330的剖面图的中间处具有最大宽度。
值得注意的是,可形成包裹金属块的模塑料以进一步增强封装刚性。因此,可不需使用现有技术中工艺的用以覆盖模塑插入层(molded builder interposer,MBI)和芯片的封装模套(package mold cap)。在维持封装刚性的同时可减少封装模套工艺成本。并且,本发明实施方式利用刻蚀金属片之后填入模塑料的方式形成基板。相较于利用堆迭双马来酰亚胺-三氮杂苯树脂(bismaleimide triacine,BT)形成的现有技术中插入层基板,本发明实施方式的插入层基板可减少工艺成本。
接着,请参考图11g,可利用例如旋涂法(spin-coating)、化学气相沉积法(chemical vapor deposition,CVD)、物理气相沉积法(physical vapor deposition,PVD)或电镀法(plating)的沉积工艺,在金属块330的顶面302a上形成保护层318。然后,进行例如激光钻孔法(laser drilling)的图案化工艺移除部分保护层318,以形成多个穿过保护层318的开口320。金属块330的部分顶面302a会从保护层318的开口320暴露出来。
接着,请参考图11h,可利用例如电镀法的沉积工艺形成穿过开口320的多个第一金属通孔322。根据本发明的另一个设计变化,可利用例如旋涂法(spin-coating)、化学气相沉积法(chemical vapor deposition,CVD)或物理气相沉积法(physical vapor deposition,PVD)的沉积工艺,以及包括微影工艺和后续的各向异性刻蚀工艺的后续的图案化工艺,形成穿过开口320的多个第一金属通孔322。在本发明其他实施方式中,可在第一金属通孔322上形成不同层别的数个重布线图案、介电层和金属通孔,以在金属块330的顶面302a(也可充当模塑插入层的互连焊盘)上制造互连结构。举例来说,可在第一金属通孔322上形成如图1所示的第一重布线层图案208、第二重布线层图案214、介电层210、第一金属通孔206和第二金属通孔212。并且,可利用沉积工艺和图案化工艺形成如图1所示的第一重布线层图案208和第二重布线层图案214。可利用沉积工艺形成如图1所示的介电层210,且利用包括微影工艺和接续的各向异性刻蚀工艺的图案化工艺形成穿过如图1所示的介电层210的开口。并且,可利用沉积工艺,在上述开口中形成如图1所示的第一金属通孔206和第二金属通孔212。
值得注意的是,可仅于模塑插入层(molded builder interposer,MBI)的一侧上形成上述互连结构,而并非在模塑插入层的两侧上形成上述互连结构。并且,可个别地增加上述互连结构的金属层(例如重布线层图案),例如个别地增加一层、两层或三层金属层。再者,可利用适当的工艺形成上述互连结构的每一层。因此,可不需现有技术中技术使用的激光钻孔工艺的工艺成本。相较于模塑插入层的现有技术中互连结构,本发明实施方式的互连结构可降低各层的工艺成本。
接着,请参考图11i,在保护层318上形成防焊层324,并使第一金属通孔322暴露出来。在本发明其他实施方式中,可利用图案化光阻搭配电镀工艺或丝网印刷工艺(screen printing)来形成防焊层324。
接着,形成多个导电凸块(例如图1所示的导电凸块220),穿过防焊层324,以直接连接至第一金属通孔322或如图1所示的其他重布线层图案。举例来说,导电凸块可为铜柱(Cu pillar)。接着,可利用接合工艺,将芯片(例如图1所示的芯片222)接合至导电凸块上,以连接至第一金属通孔322或如图1所示的其他重布线层图案。因此,上述芯片可利用例如量产的热压法(thermo-compressionmethod)的接合工艺,不需任何焊球而接合至该多个导电凸块以连接至第一金属通孔322或如图1所示的其他重布线层图案。相较于现有技术中芯片的导电凸块(焊球),本发明实施方式的导电凸块可降低工艺成本。并且,相较于现有技术中的芯片黏着技术(回焊工艺),本发明实施方式的芯片黏着技术可降低工艺成本。
将芯片接合至第一金属通孔322之前,可在防焊层324与芯片接合的位置上设置底胶材料(例如图1所示的底胶材料218)。在本发明的一个实施方式中,底胶材料可为固态(薄膜形状)或液态。相较于将芯片接合至基板之后进行的现有技术中底胶材料工艺,本发明实施方式的底胶材料工艺可降低工艺成本。
接着,可利用图案化光阻搭配电镀工艺或丝网印刷工艺(screen printing),在金属块330的底面304a(即锡球焊盘)上形成焊锡。之后,移除上述图案化光阻,且进行焊锡回焊工艺(solder reflow process),以在金属块330的底面上(即印刷电路板侧表面(PCB-side surface)形成多个焊球(例如图1所示的焊球224)。经过上述工艺之后,完成本发明的一个实施方式的具有基板600b的模塑插入层封装。
值得注意的是,基板600b的印刷电路板侧表面上没有覆盖任何防焊层。相较于在基板的芯片侧表面和印刷电路板侧表面两者上进行的现有技术中防焊层工艺,本发明实施方式的模塑插入层封装工艺可减少防焊层的工艺成本。
图12a-12f、13a-13g、14a-14g、15a-15g为本发明不同实施方式的模塑插入层封装的制造方法的剖面图。
图12a-12f为根据本发明另一个实施方式的模塑插入层封装的制造方法的剖面图。上述附图中的各元件如有与图11a-11i所示相同或相似的部分,则可参考前面的相关叙述,在此不做重复说明。并且,如图12a-12f所示的模塑插入层封装的制造方法也可称为无钝化工艺(no-passivation process)。如图12a所示,提供如图11a所示的金属片300之后,可进行微影工艺和各向异性刻蚀工艺,以从金属片300的顶面302移除一部分金属片300,因而在金属片300中形成多个第一凹陷326。值得注意的是,第一凹陷326的底面338位于金属片300内。进行各向异性刻蚀工艺之后,金属片300的上部会转变成为多个台面328,位于第一凹陷326之间。台面328具有顶面302a,而顶面302a可充当模塑插入层的互连焊盘。
接着,请参考图12b,模塑料331填入第一凹陷326,且覆盖台面328的顶面302a(互连焊盘),即覆盖金属片300的顶面。在本发明的一个实施方式中,模塑料331可包括树脂(resin)。上述模塑料331具有顶面332且为一体模塑结构(all-in-one structure)。
接着,请参考图12c,可进行包括微影工艺和各向异性刻蚀工艺的图案化工艺,移除部分模塑料331,以在模塑料331中形成多个开口334,且形成多个模塑料图案331a,其中开口334暴露出台面328的顶面302a(即金属片300的顶面),顶面302a可充当模塑插入层的互连焊盘。
接着,请参考图12d,可通过例如电镀法的沉积工艺,在开口334中形成多个第一金属通孔336,且同时形成多个第一重布线层图案342。在本发明其他实施方式中,可利用例如旋涂法(spin-coating)、化学气相沉积法(chemical vapordeposition,CVD)或物理气相沉积法(physical vapor deposition,PVD)的沉积工艺,以及包括微影工艺和接续的各向异性刻蚀工艺的后续的图案化工艺,在开口334中形成多个第一金属通孔336。第一重布线层图案342分别形成于第一金属通孔336之上。并且,第一重布线层图案342延伸至模塑料图案331a的部分顶面332a。在本发明其他实施方式中,可在第一金属通孔336上形成不同层别的数个重布线图案、介电层和金属通孔,以在台面328的顶面302a(也可充当模塑插入层的互连焊盘)上制造互连结构。举例来说,可在第一金属通孔336上形成如图1所示的第一重布线层图案208、第二重布线层图案214、介电层210、第一金属通孔206和第二金属通孔212。并且,可利用沉积工艺和图案化工艺形成如图1所示的第一重布线层图案208和第二重布线层图案214。可利用沉积工艺形成如图1所示的介电层210,且利用包括微影工艺和后续的各向异性刻蚀工艺的图案化工艺形成穿过如图1所示的介电层210的开口。并且,可利用沉积工艺,在上述开口中形成如图1所示的第一金属通孔206和第二金属通孔212。
接着,请参考图12e,进行微影工艺和各向异性刻蚀工艺,以从金属片300的底面304移除一部分金属片300,直到暴露出模塑料图案331a的底面344为止。并且,具有台面328的金属片300会转变成为多个分离的金属块346。金属块346的底面304a可充当模塑插入层的锡球焊盘。因此,形成由金属块346和模塑料图案331a构成的基板600c。并且,如图12e所示,基板600c的每一个金属块346的剖面图具有锥型轮廓。
接着,请参考图12f,在基板600c上(即模塑料331上)形成防焊层340。防焊层340覆盖模塑料图案331a,并使第一重布线层图案342暴露出来。在本发明其他实施方式中,可利用图案化光阻搭配电镀工艺或丝网印刷工艺(screenprinting)来形成防焊层340。
后续的底胶材料工艺、芯片接合工艺和焊球工艺可与图11a-11i所述的底胶材料工艺、芯片接合工艺和焊球工艺相同或相似,在此不做重复说明。经过上述工艺之后,完成本发明的一个实施方式的具有基板600c的模塑插入层封装。
图13a-13g为根据本发明又一个实施方式的模塑插入层封装的制造方法的剖面图。上述附图中的各元件如有与图11a-11i、12a-12f所示相同或相似的部分,则可参考前面的相关叙述,在此不做重复说明。并且,如图13a-13g所示的模塑插入层封装的制造方法也可称为单向刻蚀工艺(single etch process)。如图13a所示,提供如图11a所示的金属片300之后,可将载板350安装在金属片300的底面304。
接着,请参考图13b,可进行微影工艺和各向异性刻蚀工艺,以从金属片300的顶面302移除一部分金属片300,直到暴露出载板350为止,因而形成穿过该金属片的多个通孔356。进行各向异性刻蚀工艺之后,剩余的金属片300转变成为多个彼此隔开的金属块358。每一个金属块358具有顶面302a和底面304a。金属块358的顶面302a可充当模塑插入层的互连焊盘(interconnect pad)。并且,金属块358的底面304a可充当模塑插入层的锡球焊盘(ball pad)。
接着,请参考图13c,将模塑料360填入图13b所示的通孔356。然后,可使用例如化学机械抛光法(chemical mechanical polishing,CMP)或回刻蚀工艺(etching back process)的平坦化工艺,来平坦化模塑料360,并让金属块358的顶面302a暴露出来。在本发明的一个实施方式中,模塑料360可包括树脂(resin)。上述模塑料360具有一体模塑结构(all-in-one structure)。接着,请参考图13d,填入模塑料360之后,移除载板350。因此,形成由金属块358和模塑料360构成的基板600d。并且,如图13d所示,基板600d的每一个金属块358的剖面图具有锥型轮廓。
接着,请参考图13e,可利用例如旋涂法(spin-coating)、化学气相沉积法(chemical vapor deposition,CVD)、物理气相沉积法(physical vapor deposition,PVD)或电镀法(plating)的沉积工艺,在金属块358的顶面302a上形成保护层362。然后,进行例如激光钻孔法的图案化工艺移除部分保护层362,以形成穿过保护层362的多个开口364。金属块358的部分顶面302a会从保护层362的开口364暴露出来。
接着,请参考图13f,可利用例如旋涂法(spin-coating)、化学气相沉积法(chemical vapor deposition,CVD)或物理气相沉积法(physical vapor deposition,PVD)的沉积工艺,以及包括微影工艺和后续的各向异性刻蚀工艺的后续的图案化工艺,形成穿过对应开口364的多个第一金属通孔366。在本发明其他实施方式中,可在第一金属通孔366上形成不同层别的数个重布线图案、介电层和金属通孔,以在金属块358的顶面302a(也可充当模塑插入层的互连焊盘)上制造互连结构。举例来说,可在第一金属通孔366上形成如图1所示的第一重布线层图案208、第二重布线层图案214、介电层210、第一金属通孔206和第二金属通孔212。并且,可利用沉积工艺和图案化工艺形成如图1所示的第一重布线层图案208和第二重布线层图案214。可利用沉积工艺形成如图1所示的介电层210,且利用包括微影工艺和后续的各向异性刻蚀工艺的图案化工艺形成穿过如图1所示的介电层210的开口。并且可利用沉积工艺,在上述开口中形成如图1所示的第一金属通孔206和第二金属通孔212。
接着,请参考图13g,在保护层362上形成防焊层368,并使第一金属通孔366暴露出来。在本发明其他实施方式中,可利用图案化光阻搭配电镀工艺或丝网印刷工艺(screen printing)来形成防焊层368。
后续的底胶材料工艺、芯片接合工艺和焊球工艺可与图11a-11i所述的底胶材料工艺、芯片接合工艺和焊球工艺相同或相似,在此不做重复说明。经过上述工艺之后,完成本发明的一个实施方式的具有基板600d的模塑插入层封装。
图14a-14g为根据本发明又一个实施方式的模塑插入层封装的制造方法的剖面图。上述附图中的各元件如有与图11a-11i、12a-12f、13a-13g所示相同或相似的部分,则可参考前面的相关叙述,在此不做重复说明。并且,如图14a-14g所示的模塑插入层封装的制造方法也可称为置球工艺(ball drop process)。如图14a所示,提供模具(mold chase)370。在本实施方式中,模具370可由两个彼此隔开的模板370a和370b构成。每一个模板370a和370b分别具有多个凹坑形凹陷372a和372b。并且,模板370a的凹坑形凹陷372a分别面向模板370b的凹坑形凹陷372b。
接着,请参考图14b,其显示在具有模板370a和370b的模具370中装载多个金属块374,且金属块374位于模板370a和370b之间。如图14b所示,金属块374的上部和下部分别被模板370a的凹坑形凹陷372a和模板370b的凹坑形凹陷372b夹紧。因此,相邻两个金属块374通过间隙376彼此隔开。在本实施方式中,金属块374可为球状的一体模塑结构(all-in-one structure)。举例来说,金属块374可为铜球。
接着,请参考图14c,在模具370的间隙376中填入模塑料378,以包裹金属块374。值得注意的是,分别被模板370a的凹坑形凹陷372a和模板370b的凹坑形凹陷372b夹紧的金属块374的上部和下部并未被模塑料378覆盖。在本发明的一个实施方式中,模塑料378可包括树脂(resin)。上述模塑料378具有一体模塑结构(all-in-one structure)。接着,可移除模具370,使金属块374的上部和下部暴露出来。在本实施方式中,金属块374的已暴露的上部和下部可为冠形(crown shaped)。
接着,请参考图14d,可利用平坦化工艺来平坦化金属块374,以移除超出模塑料378的顶面和底面而暴露出来的金属块374的上部和下部。因此,形成多个金属块374a。在本发明的一个实施方式中,平坦化工艺可包括化学机械抛光法(chemical mechanical polishing,CMP)。如图14d所示,金属块374a的顶面302与模塑料378的顶面共平面,而金属块374a的底面304与模塑料378的底面共平面。因此,形成由金属块374a和模塑料378构成的基板600e。基板600e具有平坦化的顶面和平坦化的底面。并且,如图14d所示,基板600e的每一个金属块374a的剖面图的中间处具有最大宽度。
接着,请参考图14e,可利用例如旋涂法(spin-coating)、化学气相沉积法(chemical vapor deposition,CVD)、物理气相沉积法(physical vapor deposition,PVD)或电镀法(plating)的沉积工艺,在基板600e的顶面(即模塑料378的顶面)上形成保护层380。然后,进行例如激光钻孔法的图案化工艺移除部分保护层380,以形成多个穿过保护层380的开口382。基板600e的金属块374a的部分顶面302会从保护层380的开口382暴露出来。
接着,请参考图14f,可通过例如电镀法的沉积工艺,在通孔开口382中形成多个第一金属通孔384。在本发明其他实施方式中,可利用例如旋涂法(spin-coating)、化学气相沉积法(chemical vapor deposition,CVD)或物理气相沉积法(physical vapor deposition,PVD)的沉积工艺,以及包括微影工艺和接续的各向异性刻蚀工艺的后续的图案化工艺,形成穿过开口382的多个第一金属通孔384。在本发明其他实施方式中,可在第一金属通孔384上形成不同层别的数个重布线图案、介电层和金属通孔,以在基板600e的顶面302(也可充当基板600e的互连焊盘)上制造互连结构。举例来说,可在第一金属通孔384上形成如图1所示的第一重布线层图案208、第二重布线层图案214、介电层210、第一金属通孔206和第二金属通孔212。并且,可利用沉积工艺和图案化工艺形成如图1所示的第一重布线层图案208和第二重布线层图案214。可利用沉积工艺形成如图1所示的介电层210,且利用包括微影工艺和后续的各向异性刻蚀工艺的图案化工艺形成穿过如图1所示的介电层210的开口。并且,可利用沉积工艺,在上述开口中形成如图1所示的第一金属通孔206和第二金属通孔212。
接着,请参考图14g,在保护层380上形成防焊层386,并使第一金属通孔384暴露出来。在本发明其他实施方式中,可利用图案化光阻搭配电镀工艺或丝网印刷工艺(screen printing)来形成防焊层386。
后续的底胶材料工艺、芯片接合工艺和焊球工艺可与图11a-11i所述的底胶材料工艺、芯片接合工艺和焊球工艺相同或相似,在此不做重复说明。经过上述工艺之后,完成本发明的又一个实施方式的具有基板600e的模塑插入层封装。
图15a-15g为根据本发明又一个实施方式的模塑插入层封装的制造方法的剖面图。上述附图中的各元件如有与图11a-11i、12a-12f、13a-13g、14a-14g所示相同或相似的部分,则可参考前面的相关叙述,在此不做重复说明。并且,如图15a-15g所示的模塑插入层封装的制造方法也可称为钉状物嵌入工艺(studinsert process)。如图15a所示,提供模具(mold chase)400。在本实施方式中,模具400可由两个彼此隔开的模板400a和模板400b构成。每一个模板400a和400b分别具有多个槽形凹陷(slot-shaped recess)402a和402b。并且,模板400a的槽形凹陷402a分别面向模板400b的槽形凹陷402b。
接着,请参考图15b,其显示在模具400中装载多个金属块404,且金属块404位于模板400a和400b之间。如图15b所示,金属块404的上部和下部分别被模板400a的槽形凹陷402a和模板400b的槽形凹陷402b夹紧。因此,相邻两个金属块404通过间隙406彼此隔开。在本实施方式中,金属块404可为钉状的一体模塑结构(all-in-one structure)。举例来说,金属块404可为铜钉。
接着,请参考图15c,在模具400的间隙406中填入模塑料408,以包裹金属块404。值得注意的是,被模板400a的槽形凹陷402a和模板400b的槽形凹陷402b夹紧的金属块404的上部和下部并未被模塑料408覆盖。在本发明的一个实施方式中,模塑料408可包括树脂(resin)。上述模塑料408具有一体模塑结构(all-in-one structure)。接着,可移除模具400,使金属块404的上部和下部暴露出来。在本实施方式中,金属块404暴露出来的上部和下部可为槽形(slottedshaped)。
接着,请参考图15d,可利用平坦化工艺来平坦化金属块404,以移除位于模塑料408的顶面和底面上方的金属块404暴露出来的上部和下部。因此,形成多个金属块404a。在本发明的一个实施方式中,平坦化工艺可包括化学机械抛光法(chemical mechanical polishing,CMP)。如图15d所示,金属块404a的顶面302与模塑料408的顶面共平面,而金属块404a的底面304与模塑料408的底面共平面。因此,形成由金属块404a和模塑料408构成的基板600f。基板600f具有平坦化的顶面和平坦化的底面。并且如图15d所示,基板600f的每一个金属块404a的剖面图的中间处具有最小宽度。
接着,请参考图15e,可利用例如旋涂法(spin-coating)、化学气相沉积法(chemical vapor deposition,CVD)、物理气相沉积法(physical vapor deposition,PVD)或电镀法(plating)的沉积工艺,在基板600f的顶面上形成保护层410。然后,进行例如激光钻孔法的图案化工艺移除部分保护层410,以形成多个穿过保护层410的开口412。基板600f的金属块404a的部分顶面302会从保护层410的开口412暴露出来。
接着,请参考图15f,可通过例如电镀法的沉积工艺,在通孔开口412中形成多个第一金属通孔414。在本发明其他实施方式中,可利用例如旋涂法(spin-coating)、化学气相沉积法(chemical vapor deposition,CVD)或物理气相沉积法(physical vapor deposition,PVD)的沉积工艺,以及包括微影工艺和接续的各向异性刻蚀工艺的后续的图案化工艺,形成穿过开口412的多个第一金属通孔414。在本发明其他实施方式中,可在第一金属通孔414上形成不同层别的数个重布线图案、介电层和金属通孔,以在基板600f的顶面302(也可充当基板600f的互连焊盘)上制造互连结构。举例来说,可在第一金属通孔414上形成如图1所示的第一重布线层图案208、第二重布线层图案214、介电层210、第一金属通孔206和第二金属通孔212。并且,可利用沉积工艺和图案化工艺形成如图1所示的第一重布线层图案208和第二重布线层图案214。可利用沉积工艺形成如图1所示的介电层210,且利用包括微影工艺和后续的各向异性刻蚀工艺的图案化工艺形成穿过如图1所示的介电层210的开口。并且可利用沉积工艺,在上述开口中形成如图1所示的第二金属通孔212。
接着,请参考图15g,在保护层410上形成防焊层416,并使第一金属通孔414暴露出来。在本发明其他实施方式中,可利用图案化光阻搭配电镀工艺或丝网印刷工艺(screen printing)来形成防焊层416。
后续的底胶材料工艺、芯片接合工艺和焊球工艺可与图11a-11i所述的底胶材料工艺、芯片接合工艺和焊球工艺相同或相似,在此不做重复说明。经过上述工艺之后,完成本发明的又一个实施方式的具有基板600f的模塑插入层封装。
本发明实施方式提供一种模塑插入层封装及其制造方法。本发明实施方式的模塑插入层封装可结合由金属块构成的引线框架(lead frame)和重布线层(redistribution layer,RDL)技术,以减少激光钻孔工艺(laser drilling)、图案化工艺(patterning)和电镀工艺(plating)的使用。并且,本发明实施方式的模塑插入层封装的制造方法可使用铜柱工艺技术(copper pillar technology)搭配热压接合法(thermo-compression bonding),以及预先供应的底胶材料(pre-applied underfillmaterial)以达到具较低成本的芯片凸块工艺(chip bumping process)和芯片黏着工艺(chip attaching process)。上述铜柱工艺技术可增强封装刚性。并且,模塑料可整合在模塑插入层封装的基板内。因此,可不需使用传送模套(mold cap)的现有技术,以进一步降低工艺成本。再者,模塑插入层封装的基板的工艺可增加基板尺寸,以达到全尺寸平板的要求。因此,基板工艺可具有更佳的面积使用率。另外,今日使用的模塑插入层封装的基板工艺由现有的引线框架和模塑料供应商提供。因此,本发明实施方式的模塑插入层封装可以成功地整合引线框架和模塑料供应商。
虽然本发明以较佳实施方式揭露如上,然而此较佳实施方式并非用以限定本发明,本领域技术人员不脱离本发明的精神和范围内,凡依本发明申请专利范围所做的均等变化与修饰,都应属本发明的涵盖范围。
Claims (38)
1.一种模塑插入层封装,其特征在于,包括:
多个金属块;
模塑料,包裹该多个金属块,使该多个金属块的多个底面暴露出来;
第一芯片,设置于该模塑料上,并连接至该多个金属块的多个顶面;以及
多个焊球,连接且接触该多个金属块的该多个底面。
2.根据权利要求1所述的模塑插入层封装,其特征在于,进一步包括:
互连结构,设置于该多个金属块的该多个顶面上,并电性连接至该多个金属块和该第一芯片。
3.根据权利要求1所述的模塑插入层封装,其特征在于,进一步包括:
第一重布线层图案,设置在该模塑料和该第一芯片之间,且电性连接至该多个金属块和该第一芯片。
4.根据权利要求3所述的模塑插入层封装,其特征在于,进一步包括:
防焊层,设置在该第一重布线层图案和该第一芯片之间;以及
多个导电凸块,延伸穿过该防焊层,且将该第一重布线层图案连接至该第一芯片。
5.根据权利要求4所述的模塑插入层封装,其特征在于,该多个导电凸块包括多个焊球、多个金属柱或上述组合。
6.根据权利要求4所述的模塑插入层封装,其特征在于,该防焊层位于该模塑料之上。
7.根据权利要求4所述的模塑插入层封装,其特征在于,进一步包括底胶材料,设置在该防焊层和该第一芯片之间。
8.根据权利要求3所述的模塑插入层封装,其特征在于,进一步包括:
多个第一金属通孔,连接至该多个金属块的该多个顶面和该第一重布线层图案;
介电层,覆盖该第一重布线层图案;
多个第二金属通孔,穿过该介电层,且连接至该第一重布线层图案;以及
第二重布线层图案,连接至该多个第二金属通孔。
9.根据权利要求8所述的模塑插入层封装,其特征在于,进一步包括:
保护层,覆盖该模塑料的顶面,其中该多个第一金属通孔延伸穿过该保护层。
10.根据权利要求1所述的模塑插入层封装,其特征在于,该多个金属块的该多个顶面低于该模塑料的顶面或与该模塑料的该顶面共平面,且该多个金属块的该多个底面高于该模塑料的底面或与该模塑料的该底面共平面。
11.根据权利要求1所述的模塑插入层封装,其特征在于,该模塑料的底面未被任何防焊层覆盖。
12.根据权利要求3所述的模塑插入层封装,其特征在于,进一步包括与该第一芯片隔开的至少一个电子元件,设置于该模塑料的顶面上方,且连接至该第一重布线层图案。
13.根据权利要求3所述的模塑插入层封装,其特征在于,进一步包括散热物,覆盖该第一芯片和该第一重布线层图案。
14.根据权利要求3所述的模塑插入层封装,其特征在于,进一步包括模套,覆盖该第一芯片和该第一重布线层图案。
15.根据权利要求3所述的模塑插入层封装,其特征在于,进一步包括:
第二芯片,设置于该第一芯片旁或该第一芯片上。
16.根据权利要求15所述的模塑插入层封装,其特征在于,该第二芯片通过多个导电接线或多个导电凸块连接至该第一重布线层图案。
17.根据权利要求3所述的模塑插入层封装,其特征在于,进一步包括:
半导体封装,设置于该第一芯片旁或该第一芯片上。
18.根据权利要求17所述的模塑插入层封装,其特征在于,该半导体封装通过多个导电凸块连接至该第一重布线层图案。
19.根据权利要求2所述的模塑插入层封装,其特征在于,进一步包括:
第二芯片,设置于该第一芯片旁或该第一芯片上,其中该第二芯片通过该互连结构连接至该多个金属块。
20.根据权利要求1所述的模塑插入层封装,其特征在于,该多个金属块中的至少两个彼此接触。
21.根据权利要求1所述的模塑插入层封装,其特征在于,进一步包括:
框型金属加固物,穿过该模塑料,其中该框型金属加固物的内侧壁围绕该多个金属块。
22.根据权利要求21所述的模塑插入层封装,其特征在于,进一步包括:
多个金属鳍,设置于该框型金属加固物的外侧壁上,其中该多个金属鳍突出于该模塑料的边界。
23.根据权利要求21所述的模塑插入层封装,其特征在于,进一步包括:
金属加固条,穿过该模塑料,连接至该框型金属加固物的相邻两侧。
24.根据权利要求23所述的模塑插入层封装,其特征在于,该多个金属块、该框型金属加固物和该金属加固条由铜形成。
25.一种模塑插入层封装的制造方法,其特征在于,包括:
提供金属片,该金属片具有顶面和底面;
进行第一各向异性刻蚀工艺,以从该金属片的该顶面移除一部分该金属片,因而在该金属片中形成多个第一凹陷;
将载板安装在该金属片的该顶面,覆盖该多个第一凹陷;
进行第二各向异性刻蚀工艺,以从该金属片的该底面移除位于该多个第一凹陷下的一部分该金属片,因而在该金属片中形成多个第二凹陷,其中该多个第一凹陷和该多个第二凹陷分别彼此互连;
从该金属片的该底面填入模塑料至该多个第一凹陷和该多个第二凹陷,并使该金属片的该底面暴露出来;
移除该载板;
在该金属片的该顶面上形成保护层,该保护层具有穿过该保护层的多个开口;
形成穿过该多个开口的多个第一金属通孔;以及
在该保护层上形成防焊层,并使该多个第一金属通孔暴露出来。
26.一种模塑插入层封装的制造方法,其特征在于,包括:
提供金属片,该金属片具有顶面和底面;
进行第一各向异性刻蚀工艺,以从该金属片的该顶面移除一部分该金属片,因而在该金属片中形成多个第一凹陷;
形成模塑料,覆盖该金属片的该顶面,且填入该多个第一凹陷;
在该模塑料中形成多个开口,其中该多个开口暴露该金属片的该顶面;
在该多个开口内形成多个第一金属通孔,且分别在该多个第一金属通孔上形成多个第一重布线层图案;
进行第二各向异性刻蚀工艺,以从该金属片的该底面移除一部分该金属片,直到暴露出该模塑料的底面,其中刻蚀后的该金属片转变成为多个金属块;以及
在该模塑料上形成防焊层,并使该多个第一重布线层图案暴露出来。
27.根据权利要求26所述的模塑插入层封装的制造方法,其特征在于,进一步包括:
形成多个导电凸块,穿过该防焊层,以直接连接至该多个第一金属通孔或该多个第一重布线层图案;
将芯片接合至该多个导电凸块上,以连接至该多个第一金属通孔或该多个第一重布线层图案;以及
在该多个金属块的多个底面上形成多个焊球。
28.根据权利要求27所述的模塑插入层封装的制造方法,其特征在于,进一步包括:设置底胶材料在该防焊层与该芯片接合的位置上。
29.根据权利要求28所述的模塑插入层封装的制造方法,其特征在于,该底胶材料为固态或液态。
30.一种模塑插入层封装的制造方法,其特征在于,包括:
提供金属片,该金属片具有顶面和底面;
将载板安装在该金属片的该底面;
进行各向异性刻蚀工艺,以从该金属片的该顶面移除一部分该金属片,直到暴露出该载板,因而形成穿过该金属片的多个通孔,其中刻蚀后的该金属片转变成为多个金属块;
从该多个通孔中填入模塑料,使该多个金属块的该顶面暴露出来;
移除该载板;
在该多个金属块的该顶面上形成保护层,该保护层具有多个开口,穿过该保护层;
形成穿过该多个开口的多个第一金属通孔;以及
在该保护层上形成防焊层,并使该多个第一金属通孔暴露出来。
31.根据权利要求30所述的模塑插入层封装的制造方法,其特征在于,进一步包括:
形成多个导电凸块,穿过该防焊层,以直接连接至该多个第一金属通孔;
将芯片接合至该多个导电凸块上,以连接至该多个第一金属通孔;以及
在该多个金属块的多个底面上形成多个焊球。
32.根据权利要求31所述的模塑插入层封装的制造方法,其特征在于,进一步包括:在该防焊层与该芯片接合的位置上设置底胶材料。
33.根据权利要求32所述的模塑插入层封装的制造方法,其特征在于,该底胶材料为固态或液态。
34.一种模塑插入层封装的制造方法,其特征在于,包括:
提供模具;
在该模具中装载多个金属块,其中该多个金属块的多个上部和多个下部分别被该模具夹紧;
在该模具中填入模塑料,以包裹该多个金属块;
移除该模具,使该多个金属块的该多个上部和该多个下部暴露出来;
移除超出该模塑料的顶面和底面的暴露出来的该多个金属块的该多个上部和该多个下部;
在该模塑料的该顶面上形成保护层,该保护层具有多个开口,穿过该保护层;
形成穿过该多个开口的多个第一金属通孔;以及
在该保护层上形成防焊层,并使该多个第一金属通孔暴露出来。
35.根据权利要求34所述的模塑插入层封装的制造方法,其特征在于,该多个金属块为球状或钉状。
36.根据权利要求34所述的模塑插入层封装的制造方法,其特征在于,进一步包括:
形成多个导电凸块,穿过该防焊层,以直接连接至该多个第一金属通孔;
将芯片接合至该多个导电凸块上,以连接至该多个第一金属通孔;以及
在该多个金属块的多个底面上形成多个焊球。
37.根据权利要求36所述的模塑插入层封装的制造方法,其特征在于,进一步包括:在该防焊层与该芯片接合的位置上设置底胶材料。
38.根据权利要求37所述的模塑插入层封装的制造方法,其特征在于,该底胶材料为固态或液态。
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US20130168857A1 (en) | 2013-07-04 |
US20140377913A1 (en) | 2014-12-25 |
US20140127865A1 (en) | 2014-05-08 |
CN103199077B (zh) | 2016-01-06 |
TWI470754B (zh) | 2015-01-21 |
US9040359B2 (en) | 2015-05-26 |
TW201330201A (zh) | 2013-07-16 |
US8957518B2 (en) | 2015-02-17 |
US8859340B2 (en) | 2014-10-14 |
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