CN109309076A - 封装结构 - Google Patents

封装结构 Download PDF

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Publication number
CN109309076A
CN109309076A CN201710963060.7A CN201710963060A CN109309076A CN 109309076 A CN109309076 A CN 109309076A CN 201710963060 A CN201710963060 A CN 201710963060A CN 109309076 A CN109309076 A CN 109309076A
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Prior art keywords
layer
conductive plate
tube core
molding compounds
earth plate
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CN201710963060.7A
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CN109309076B (zh
Inventor
吴凯强
余振华
余国宠
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本发明实施例提供一种封装结构及其制造方法。至少一个管芯被模塑在模塑化合物中。接地板位于所述管芯的背侧表面上，所述接地板的第一表面从所述模塑化合物暴露出，且所述接地板的第二表面被所述模塑化合物覆盖。所述接地板的所述第一表面与所述模塑化合物的第三表面齐平且共面。连接膜位于所述管芯的所述背侧表面与所述接地板的所述第二表面之间。所述管芯、所述模塑化合物及所述接地板接触所述连接膜。多个层间穿孔被模塑在所述模塑化合物中，且所述多个层间穿孔中的至少一者位于所述接地板的所述第二表面上并实体地接触所述接地板的所述第二表面。

Description

封装结构
相关申请交叉参考
本申请主张2017年7月26日提出申请的美国临时专利申请第62/537,442号的优先权利。上述专利申请的全部内容并入本文供参考且成为本说明书的一部分。
工艺领域
本发明实施例是有关于一种封装结构及其制造方法。
背景工艺
在各种电子应用(例如移动电话及其他移动电子设备)中使用的半导体装置及集成电路通常被制造在单个半导体晶片上。在晶片层级工艺中，针对晶片中的管芯进行加工处理，并且可以将管芯与其他的半导体元件(例如，天线)一起封装。目前各方正努力开发适用于晶片级封装的不同工艺。
发明内容
本发明实施例提供一种封装结构包括至少一个管芯、接地板、模塑化合物、连接膜及多个层间穿孔。所述至少一个管芯被模塑在所述模塑化合物中。所述接地板位于所述至少一个管芯的背侧表面上，所述接地板的第一表面从所述模塑化合物暴露出，且所述接地板的第二表面被所述模塑化合物覆盖。所述接地板的所述第一表面与所述模塑化合物的第三表面齐平且共面。所述连接膜位于所述至少一个管芯的所述背侧表面与所述接地板的所述第二表面之间。所述至少一个管芯、所述模塑化合物及所述接地板接触所述连接膜。所述多个层间穿孔被模塑在所述模塑化合物中，且所述多个层间穿孔中的至少一者位于所述接地板的所述第二表面上并实体地接触所述接地板的所述第二表面。
附图说明
结合附图阅读以下详细说明，会最佳地理解本发明实施例的各方面。应注意，根据本行业中的标准惯例，各种特征并非按比例绘制。事实上，为使论述清晰起见，可任意增大或减小各种特征的尺寸。
图1至图10是根据本发明一些示例性实施例，封装结构的制造方法中的各种阶段的示意性剖视图。
图11是说明根据本发明一些示例性实施例，封装结构的传导板、管芯贴合膜及天线元件之间的相对位置的示意性俯视图。
图12A至图12G是说明根据本发明一些示例性实施例，与天线元件对应的传导板的各种预定图案的示意性俯视图。
图13是根据本发明一些示例性实施例的封装结构的示意性剖视图。
[符号的说明]
10、10’：封装结构；
20：重布线结构；
51：实心金属板；
52：狭缝；
53：金属条带；
54：金属块；
55、57：金属线；
56a、56b：开口；
112：载体；
114：剥离层；
116：缓冲层；
118a：传导板(接地板)；
120：层间穿孔；
130：管芯；
130a：有源表面；
130b：接垫；
130c：钝化层；
130d：导电柱；
130e：保护层；
130f：背侧表面；
140：模塑化合物；
140a：顶表面(第四表面)；
140b：底表面(第三表面)；
150、200：重布线层；
152、210：聚合物介电层；
154、220：金属层；
160：球下金属图案；
170：导电元件；
180：密封体；
190：天线元件；
A-A’：剖面线；
DA：连接膜；
S1：第一表面；
S2：第二表面；
S3：侧壁。
具体实施方式
以下公开内容提供用于实作所提供主题的不同特征的许多不同的实施例或实例。下文阐述组件、值、操作、材料、构造等的具体实例以简化本发明实施例。当然，这些仅为实例且不旨在进行限制。能设想出其他组件、值、操作、材料、构造等。例如，以下说明中将第一特征形成在第二特征之上或第二特征上可包括其中第一特征与第二特征被形成为直接接触的实施例，且也可包括其中第一特征与第二特征之间可形成有额外特征、进而使得所述第一特征与所述第二特征可能不直接接触的实施例。另外，本发明实施例可能在各种实例中重复使用参考编号及/或字母。这种重复使用是出于简洁及清晰的目的，而不是自身表示所论述的各种实施例及/或配置之间的关系。
此外，为易于说明，本文中可能使用例如“在...下方(beneath)”、“在...下面(below)”、“下部的(lower)”、“上方(above)”、“上部的(upper)”等空间相对性用语来阐述图中所说明的一个元件或特征与另一(些)元件或特征的关系。所述空间相对性用语旨在除图中所绘示的定向外还囊括装置在使用或操作中的不同定向。设备可具有其他定向(旋转90度或其他定向)，且本文中所用的空间相对性描述语可同样相应地进行解释。
本发明实施例也可包括其他特征及工艺。举例来说，可包括测试结构，以帮助对三维(3D)封装或三维集成电路(3DIC)装置进行验证测试。测试结构可例如包括形成于重布线层中或衬底上的测试垫，所述测试垫可对三维封装或三维集成电路进行测试、容许使用探针(probe)及/或探针卡(probe card)等。可对中间结构以及最终结构执行验证测试。另外，本文中所公开的结构及方法可与包括对已知良好管芯进行中间验证的测试方法一起使用，以提高产量(yield)并降低成本。
图1至图10是根据本发明一些示例性实施例，封装结构的制造方法中的各种阶段的示意性剖视图。图11是说明根据本发明一些示例性实施例，封装结构的传导板、管芯贴合膜及天线元件之间的相对位置的示意性俯视图。图1至图10是沿图11所示剖面线A-A’截取的示意性剖视图。图12A至图12G是说明根据本发明一些示例性实施例，与天线元件对应的传导板的各种预定图案的示意性俯视图。在示例性实施例中，所述制造方法是晶片级封装工艺的一部分。应注意，本文中所述的工艺步骤涵盖用于制造封装结构的制造工艺的一部分。各实施例旨在提供进一步解释，而并非用于限制本发明实施例的范围。在图1至图10中，举例来说，示出一个管芯来代表晶片的多个管芯，且示出封装结构10来代表按照制造方法所获得的封装结构。在其他实施例中，示出两个芯片或管芯来代表晶片的多个芯片或管芯，且示出一个或多个封装结构来代表按照(半导体)制造方法所获得的多个(半导体)封装结构，但本发明实施例并非仅限于此。
参照图1，在一些实施例中，提供载体112。载体112可为玻璃载体或任何适用于封装结构制造方法的载体。在一些实施例中，载体112设置有传导板(conductive plate)118a、剥离层114、及形成在剥离层114上的缓冲层116，其中传导板118a具有第一表面S1、与第一表面S1相对的第二表面S2以及连接第一表面S1与第二表面S2的侧壁S3。如图1中所示，缓冲层116位于剥离层114与传导板118a的第一表面S1之间，且剥离层114位于载体112与缓冲层116之间，其中缓冲层116的一部分由传导板118a暴露出。在一个实施例中，传导板118a是单层式结构。
剥离层114的材料可以是能够使载体112与位于其上的各层轻易脱离的任意材料。在一些实施例中，例如，剥离层114可包括释放层(例如光/热转换(light-to-heatconversion，“LTHC”)层)及粘合层(例如紫外可固化粘合层或热可固化粘合层)。在一些实施例中，缓冲层116可为介电材料层。在一些实施例中，缓冲层116可为由聚酰亚胺(polyimide，PI)、聚苯并恶唑(polybenzoxazole，PBO)、苯环丁烷(benzocyclobutene，BCB)、或任何其他适合的聚合物系介电材料制成的聚合物层。在一些实施例中，缓冲层116可为味之素增层膜(Ajinomoto Buildup Film，ABF)、阻焊膜(Solder Resist film，SR)等。剥离层114及缓冲层116可通过例如旋转涂布、积层、沉积等适合的制造工艺来形成。传导板118a的材料可例如包括铝、钛、铜、镍、钨、及/或其合金。在一个实施例中，传导板118a可通过例如镀覆工艺、光刻与刻蚀工艺等适合的制造工艺来形成。在一些实施例中，图案化工艺包括执行干式刻蚀工艺、湿式刻蚀工艺或其组合。
在一些实施例中，如图1中所示，传导板118a被图案化为包括实心金属板51、金属线55及开口56a、56b的预定目标图案。举例来说，在图12A中，金属线55的位置与随后形成的天线元件190的位置对应地交叠，且金属线55通过开口56a与实心金属板51电隔离(分隔开)。在图12A至图12G中，随后形成的天线元件190的位置通过由虚线环绕的四个矩形块来表示。然而，天线元件的数目或形状并不受本文中的实例限制。如图12A中所示，金属线55可充当为随后形成的天线元件190的馈送线，而实心金属板51可充当为随后形成的天线元件190的接地板，且可视需要而在传导板118a中形成开口56b以符合设计规则的图案密度控制。
在一些实施例中，传导板118a可被图案化为包括多个金属线的预定目标图案。举例来说，在图12B中及在图12C中，金属线55的位置与随后形成的天线元件190的位置对应地交叠，使得一部分的金属线55可充当为随后形成的天线元件190的馈送线，且另一部分的金属线55可充当为随后形成的天线元件190的接地板或线。在一个实施例中，与不同的随后形成的天线元件190对应地交叠的金属线55的数目可为相同的(参见图12B)。在一个替代实施例中，与不同的随后形成的天线元件190对应地交叠的金属线55的数目可为不同的(参见图12C)。
在一些实施例中，传导板118a可被图案化为包括金属线55及金属线57的预定目标图案。举例来说，在图12D中，金属线55的位置与随后形成的天线元件190的位置对应地交叠，使得一部分的金属线55可充当为随后形成的天线元件190的馈送线，且视需要，另一部分的金属线55可充当为随后形成的天线元件190的接地板或线。另一方面，与随后形成的天线元件190不交叠的金属线57可充当为其他随后形成的元件的布线线条。
在一些实施例中，传导板118a可被图案化成具有包括实心金属板51的预定目标图案(如图12E中所示)，其中实心金属板51与随后形成的天线元件190交叠。在一些实施例中，传导板118a可被图案化成具有形式为具有狭缝52的实心金属板51的预定目标图案(如图12F中所示)，狭缝52排列成十字形式(本揭露并不局限狭缝52之于形状或数目，狭缝52例如可以是多个矩形狭缝并排)，其中实心金属板51与随后形成的天线元件190交叠，且随后形成的天线元件190由狭缝52分隔开。
在一些实施例中，传导板118a可被图案化成具有包括与多个金属条带53内连的多个金属块54的预定目标图案(如图12G中所示)，其中金属块54中的每一者的至少一部分与随后形成的天线元件190交叠。在一个实施例中，金属块54中的每一者的面积大于随后形成的天线元件190的面积。在一个实施例中，金属块54中的每一者的面积小于随后形成的天线元件190的面积。在一个实施例中，金属块54中的每一者的面积实质上等于随后形成的天线元件190的面积。在替代实施例中，一部分的金属块54的面积大于随后形成的天线元件190的面积，另一部分的金属块54的面积小于随后形成的天线元件190的面积及/或另一部分的金属块54的面积实质上等于随后形成的天线元件190的面积。
因对密度控制、性能效率及/或布线目的的考虑，可基于需求来指定及选择传导板118a的预定目标图案。在本发明实施例中，狭缝52、金属条带53、金属块54、金属线55、开口56b及金属线57的数目并不受限。在一些实施例中，与随后形成的天线元件190对应地交叠的金属线55的数目可为一个或多于一个。在某些实施例中，传导板118a可为铜板；然而，本发明实施例并不特别限于此。
接下来，在载体112上形成层间穿孔(through interlayer via，TIV)120。在某些实施例中，如图2中所示，层间穿孔120中的至少一者直接设置在传导板118a上，且其余的层间穿孔120直接设置在缓冲层116上(图2中未示出)。换句话说，如图2中所示，层间穿孔120中的至少一者实体地连接到传导板118a的第二表面S2。然而，本发明实施例并非仅限于此。在一些实施例中，各层间穿孔120直接设置在缓冲层116上。
在一些实施例中，层间穿孔120是集成扇出型(integrated fan-out，InFO)穿孔。在某些实施例中，各层间穿孔120是沿两个封装结构10之间的切割线(图中未示出)排列，但并不位于所述切割线上。在一些实施例中，层间穿孔120是通过光刻工艺、镀覆工艺、光刻胶剥除工艺或任何其他适合的方法来形成。在一个实施例中，可通过以下操作来形成层间穿孔120：形成掩模图案(图中未示出)，所述掩模图案覆盖传导板118a及缓冲层116且具有暴露出传导板118a一部分的开口；通过电镀或沉积来形成填充所述开口的金属材料，以形成层间穿孔120；以及接着移除所述掩模图案。然而，本发明实施例并非仅限于此。在一个实施例中，层间穿孔120的材料可包括金属材料，例如铜或铜合金等。在一些实施例中，传导板118a的厚度可小于10μm(本揭露不限于此，传导板118a的厚度亦可大于10μm，取决于制造技术与天线设计搭配)。为简单起见，出于说明性目的在图2中仅呈现了两个层间穿孔120，然而，应注意，可形成多于两个层间穿孔；本发明实施例并非仅限于此。可基于需求来选择层间穿孔的数目。
参照图3，在一些实施例中，提供上面设置有连接膜DA的至少一个管芯130，其中管芯130具有有源表面130a及与有源表面130a相对的背侧表面130f。如图3中所示，管芯130通过连接膜DA设置在传导板118a上以及载体112之上。在一些实施例中，连接膜DA位于管芯130与传导板118a之间，且连接膜DA实体地接触管芯130的背侧表面130f及传导板118a的第二表面S2。如图3中所示，层间穿孔120的设置在传导板118a上的底表面与连接膜DA的位于传导板118a的第二表面S2处的一侧的至少一部分共面。在一些实施例中，因管芯130与传导板118a之间设置有连接膜DA，管芯130与导电层118a稳定地粘附到彼此。在一些实施例中，举例来说，连接膜DA可为管芯贴合膜、由粘合剂或环氧树脂制成的层、或由导热且导电材料或导热且电绝缘材料制成的类似层。由于连接膜DA，传导板118a与管芯130热耦合，使得由管芯130产生的热可经由传导板118a耗散。如图3中所示，例如，传导板118a的面积大于管芯130的面积，但本发明实施例并非仅限于此。在替代实施例中，传导板118a的面积可小于管芯130的面积。在另一替代实施例中，传导板118a的面积可等于管芯130的面积。
在一些实施例中，如图3中所示，管芯130包括有源表面130a、分布在有源表面130a上的多个接垫130b、覆盖有源表面130a并覆盖接垫130b一部分的钝化层130c、多个导电柱130d、保护层130e、及与有源表面130a相对的背侧表面130f。接垫130b由钝化层130c局部地暴露出，导电柱130d设置在接垫130b上并电连接到接垫130b，且保护层130e覆盖钝化层130c并暴露出导电柱130d。举例来说，导电柱130d是铜柱、铜合金柱或其他适合的金属柱。在一些实施例中，钝化层130c及保护层130e可为聚苯并恶唑(PBO)层、聚酰亚胺(PI)层或其他适合的聚合物。在一些替代实施例中，钝化层130c及保护层130e可由无机材料(例如氧化硅、氮化硅、氮氧化硅、或任何适合的介电材料)制成。举例来说，钝化层130c的材料可与保护层130e的材料相同或不同。在替代实施例中，管芯130可包括分布在有源表面130a上的接垫130b、覆盖有源表面130a并覆盖接垫130b一部分的钝化层130c、与有源表面130a相对的背侧表面130f。如图3中所示，出于说明性目的而仅呈现一个管芯，然而，应注意，可提供一个或多个管芯。在一些实施例中，本文中所述的管芯130可指芯片或集成电路(integratedcircuit，IC)。在一些实施例中，管芯130包括至少一个无线射频(radio frequency，RF)芯片。在一些实施例中，管芯130可进一步包括类型相同或类型不同的额外芯片。举例来说，在替代实施例中，提供多于一个管芯130，且除包括至少一个无线射频芯片之外，管芯130可包括选自以下各者的类型相同或不同的芯片：数字芯片、模拟芯片、或混合信号芯片、专用集成电路(application-specific integrated circuit，“ASIC”)芯片、传感器芯片、存储器芯片、逻辑芯片、或电压调节器芯片。在替代实施例中，管芯130可以是组合类型的芯片或集成电路，且管芯130可为同时包括射频芯片及数字芯片两者的无线保真(WirelessFidelity，WiFi)芯片。
参照图4，在一些实施例中，将传导板118a、连接膜DA、层间穿孔120及管芯130模塑在模塑化合物140中。在一些实施例中，模塑化合物140形成在缓冲层116及传导板118a上以及载体112之上。如图4中所示，模塑化合物140至少填满各层间穿孔120之间以及层间穿孔120、管芯130及连接膜DA之间的间隙。在一些实施例中，模塑化合物140覆盖传导板118a、连接膜DA及缓冲层116。如图4中所示，模塑化合物140覆盖传导板118a的第二表面S2及侧壁S3，且传导板118a的第一表面S1从模塑化合物140的底表面140b暴露出，其中传导板118a的第一表面S1与模塑化合物140的底表面140b的一部分彼此齐平且共面。模塑化合物140包绕层间穿孔120的侧壁及管芯130的侧壁，并暴露出层间穿孔120的顶表面及管芯130(例如，管芯130的导电柱130d及保护层130e)的顶表面。在一些实施例中，由模塑化合物140的顶表面140a暴露出的层间穿孔120的顶表面及管芯130的顶表面变得与模塑化合物140的顶表面140a实质上齐平。换句话说，模塑化合物140的顶表面140a与层间穿孔120的顶表面及管芯130的顶表面是共面的。在一些实施例中，模塑化合物140的材料具有低介电常数(Dk)及低损耗角正切(Df)性质。视高速应用的频率范围而定，可基于封装结构的所需电性质来选择模塑化合物140的适合材料。如图4中所示，连接膜DA的侧壁被模塑化合物140覆盖。在一些实施例中，连接膜DA的不同表面各自分别接触管芯130的背侧表面130f、模塑化合物140、及传导板118a的第二表面S2。如图4中所示，连接膜DA实体地接触模塑化合物140、传导板118a及管芯130。传导板118a实体地接触层间穿孔120中的至少一者、缓冲层116、模塑化合物140及连接膜DA。模塑化合物140覆盖传导板118a的第二表面S2及侧壁S3，并且模塑化合物140的底表面140b的一部分与传导板118a的第一表面S1共面且齐平。如图4中所示，管芯130、模塑化合物140及传导板118a分别与连接膜DA的不同表面接触。
在替代实施例(图中未示出)中，可通过模塑化合物140包覆模塑传导板118a、连接膜DA、层间穿孔120及管芯130。接着，需要将模塑化合物140平坦化至层间穿孔120的顶表面及管芯130(例如，管芯130的导电柱130d及保护层130e)的顶表面由模塑化合物140的顶表面140a暴露出为止。在某些实施例中，在平坦化之后，模塑化合物140的顶表面140a及层间穿孔120的顶表面、管芯130的导电柱130d的顶表面及保护层130e的顶表面变得实质上齐平且共面。在一些实施例中，平坦化步骤可包括研磨工艺、飞切(fly cutting)工艺、或化学机械抛光(chemical mechanical polishing，CMP)工艺。在平坦化步骤之后，可视需要执行清洁步骤，例如以清洁及移除从平坦化步骤所产生的残余物。然而，本发明实施例并非仅限于此，且可通过任何其他适合的方法来执行平坦化步骤。
参照图5，在一些实施例中，在层间穿孔120、管芯130及模塑化合物140上形成重布线层150。如图5中所示，重布线层150形成在模塑化合物140的顶表面140a上。在一些实施例中，重布线层150经由层间穿孔120电连接到传导板118a，且经由导电柱130d电连接到管芯130。在一些实施例中，传导板118a经由层间穿孔120、重布线层150及导电柱130d电连接到管芯130。在一些实施例中，如图5中所示，管芯130直接位于重布线层150与连接膜DA之间，且模塑化合物140直接位于重布线层150与传导板118a之间以及重布线层150与缓冲层116之间。
在一些实施例中，形成重布线层150包括依序交替地形成一个或多个聚合物介电层152及一个或多个金属层154。在某些实施例中，如图5中所示，金属层154夹置在各聚合物介电层152之间，但金属层154中最顶层的顶表面由聚合物介电层152中的最顶层暴露出，且金属层154中的最下层由聚合物介电层152中的最下层暴露出以与层间穿孔120及管芯130的导电柱130d连接。在一些实施例中，金属层154的材料包括铝、钛、铜、镍、钨及/或其合金，且金属层154可通过电镀或沉积来形成。在一些实施例中，聚合物介电层152的材料包括聚酰亚胺、环氧树脂、丙烯酸树脂、酚树脂、苯环丁烷(BCB)、聚苯并恶唑(PBO)、或任何其他适合的聚合物系介电材料。然而，应注意，重布线层150并非仅限于包括两个介电层及/或两个金属层。
参照图6，在一些实施例中，在重布线层150的金属层154中最顶层的被暴露顶表面上形成多个球下金属(under-ball metallurgy，UBM)图案160，以用于与导电元件(例如，导电球)及/或半导体元件(例如，无源组件或有源组件)进行电连接。如图6中所示，例如，重布线层150包括前侧重布线层结构(front-side redistribution layer structure)，其金属层154中的最下层实体地及电性地连接到层间穿孔120及管芯130的导电柱130d，且使金属层154中最顶层的被暴露顶表面实体地及电性地连接到用于辅助进行球安装的球下金属图案160。在一些实施例中，球下金属图案160的材料例如可包括铜、镍、钛、钨、或其合金等，且可例如通过电镀工艺来形成。如图6中所示，出于说明性目的在图6中仅呈现了两个球下金属图案160，然而，应注意，多于两个球下金属图案160可被形成；本发明实施例并非仅限于此。类似地，可基于需求来选择层间穿孔120的数目。
参照图7，在一些实施例中，在重布线层150上形成导电元件170。在一个实施例中，导电元件170通过球下金属图案160形成在重布线层150上。在一些实施例中，某一些的导电元件170经由球下金属图案160及重布线层150电连接到管芯130，且某一些的导电元件170经由球下金属图案160、重布线层150及层间穿孔120电连接到传导板118a。在一些实施例中，导电元件170通过助焊剂贴合到球下金属图案160。在一些实施例中，导电元件170例如是焊料球或球栅阵列封装(ball grid array，BGA)球。在一些实施例中，导电元件170可通过植球工艺或回焊工艺设置在球下金属图案160上。在一些实施例中，重布线层150位于导电元件170与管芯130之间。
参照图8，在一些实施例中，将载体112翻转(倒置)且接着从缓冲层116剥离。因剥离层114而会轻易地使缓冲层116与载体112分开，而暴露出缓冲层116。在一些实施例中，通过剥离工艺将载体112与缓冲层116分离，并移除载体112及剥离层114。在一些实施例中，留存在传导板118a上的缓冲层116充当保护层。作为另一选择，在一些实施例中，可随后移除缓冲层116。
参照图9，在一些实施例中，在缓冲层116上以及传导板118a之上形成密封体180，其中密封体180覆盖缓冲层116。在一些实施例中，缓冲层116夹置在密封体180与传导板118a的第一表面S1之间。如图9中所示，密封体180形成在与传导板118a的第一表面S1背对的缓冲层116的表面上。在一些实施例中，在形成密封体180之前，可将导电元件170例如转移到临时载体(图中未示出，例如胶带等)，以稳定地固持导电元件170，从而避免因后续工艺而对导电元件造成任何损坏。在替代实施例中，在形成密封体180之前，可视需要移除缓冲层116。在一些实施例中，密封体180例如包含环氧树脂或任何其他适合类型的模塑材料。在一些实施例中，密封体180的材料具有低介电常数(Dk)及低损耗角正切(Df)性质。视高速应用的频率范围而定，可基于封装的所需电性质来选择密封体的适合材料。在一些实施例中，密封体180的材料可与模塑化合物140的材料相同。在替代实施例中，密封体180的材料可不同于模塑化合物140的材料，但本发明实施例并非仅限于此。
参照图10，在一些实施例中，在密封体180上以及缓冲层116及传导板118a之上形成天线元件190。密封体180位于天线元件190与缓冲层116之间。如图10中所示，天线元件190形成在与传导板118a的第一表面S1背对的密封体180的表面上。在一些实施例中，天线元件190与传导板118a电耦合，其中与天线元件190交叠的传导板118a可充当为天线元件190的接地板及馈送线。在一些实施例中，传导板118a可称作是接地板(ground plate)。因传导板118a(即，接地板/馈送线)以及天线元件190的构造，可针对天线应用形成较少重布线层，使得封装结构的整体厚度可得以减小。在一些实施例中，通过以下操作来形成天线元件190：通过在密封体180之上进行电镀或沉积而形成金属层(图中未示出)并接着通过光刻与刻蚀工艺将所述金属层图案化。在替代实施例中，通过利用镀覆工艺形成金属层(图中未示出)来形成天线元件190。在一些实施例中，第一金属层的材料包括铝、钛、铜、镍、钨、及/或其合金。在一些实施例中，各天线元件190排列成矩阵形式，例如N×N阵列或N×M阵列(N、M>0，N与M既可相等也可不相等)。在一些实施例中，天线元件190可包括贴片天线。然而，本发明实施例并非仅限于此。
如图10及图11中所示，在一些实施例中，封装结构10包括排列成阵列形式(例如2×2阵列)的天线元件190，然而，本发明实施例并非仅限于此。可基于需求来指定及选择天线元件190的阵列大小。在一些实施例中，天线元件190位于传导板118a、连接膜DA及管芯130上并与传导板118a、连接膜DA及管芯130交叠。在一些实施例中，执行切分工艺，以将具有多个封装结构10的晶片切割成单独且分开的封装结构10。在一个实施例中，所述切分工艺是包括机械刀片锯切或激光切割的晶片切分工艺。至此为止，封装结构10的制造已完成。
参照图10，在一些实施例中，封装结构10包括传导板118a、层间穿孔120、连接膜DA、管芯130、模塑化合物140、重布线层150、导电元件170、密封体180、及天线元件190。在一些实施例中，封装结构10进一步包括缓冲层116及球下金属图案160。在一些实施例中，管芯130通过连接膜DA位于传导板118a的第二表面S2上。连接膜DA直接位于管芯130与传导板118a之间，其中连接膜DA实体地接触管芯130、传导板118a的第二表面S2、及模塑化合物140。由于连接膜DA，传导板118a与管芯130为热耦合，使得由管芯130产生的热可经由传导板118a耗散，从而使传导板118a用作散热板(thermal plate)。在一个实施例中，传导板118a位于缓冲层116上，其中缓冲层116可作为传导板118a的保护层。传导板118a位于缓冲层116与连接膜DA之间，其中传导板118a的第一表面S1接触缓冲层116，且传导板118a的第二表面S2接触连接膜DA。在某些实施例中，层间穿孔120排列在管芯130旁边及周围，其中层间穿孔120中的至少一者位于传导板118a上且实体地接触传导板118a。在一些实施例中，传导板118a、连接膜DA、层间穿孔120及管芯130被模塑在模塑化合物140中。如图10中所示，传导板118a的第二表面S2及侧壁S3被模塑化合物140覆盖，其中传导板118a的第一表面S1由模塑化合物140的底表面140b暴露出。传导板118a的第一表面S1与模塑化合物140的底表面140b彼此齐平且共面。连接膜DA的侧壁、层间穿孔120的侧壁及管芯130的侧壁被模塑化合物140覆盖，其中层间穿孔120的顶表面及管芯130的顶表面与模塑化合物140的顶表面140a齐平且共面。
如图10中所示，重布线层150位于层间穿孔120、管芯130及模塑化合物140上，其中重布线层150电连接到层间穿孔120及管芯130。重布线层150位于模塑化合物140的顶表面140a上，且模塑化合物140位于重布线层150与传导板118a之间以及重布线层150与缓冲层116之间。在某些实施例中，导电元件170位于重布线层150上且电连接到重布线层150，其中重布线层150位于层间穿孔120与导电元件170之间、管芯130与导电元件170之间以及模塑化合物140与导电元件170之间。在一个实施例中，球下金属图案160位于重布线层150与导电元件170之间。
在图10上继续，天线元件190及密封体180位于缓冲层116上以及传导板118a之上，其中天线元件190及密封体180两者位于与传导板118a的第一表面S1背对的缓冲层116的表面上。密封体180位于天线元件190与缓冲层116之间以及天线元件190与传导板118a之间。在一些实施例中，天线元件190与传导板118a电耦合，其中传导板118a充当为天线元件190的馈送线。在天线应用中，传导板118a与天线元件190一起工作，且传导板118a可作为接地板。因传导板118a(接地板/馈送线)以及天线元件190的构造，可针对天线应用形成较少重布线层，使得封装结构的整体厚度可得以减小。在一个实施例中，某一些的导电元件170经由球下金属图案160及重布线层150电连接到管芯130。在一个实施例中，某一些的导电元件170经由重布线层150电连接到层间穿孔120。在一个实施例中，某一些的导电元件170经由重布线层150及层间穿孔120中的至少一者电连接到传导板118a。如图10中所示，在连接膜DA上的垂直投影中，传导板118a的面积大于管芯130的面积，其中所述垂直投影是与管芯130、连接膜DA及传导板118a的堆叠方向投射。在替代实施例中，在连接膜DA上的垂直投影中，传导板118a的面积可小于或等于管芯130的面积。
图13是根据本发明一些示例性实施例的封装结构的示意性剖视图。一同参照图10及图13，图10所示的封装结构10与图13所示的封装结构10’是类似的，差异在于，对于图13所示的封装结构10’，传导板118a上进一步设置有额外元件，即重布线层200。与上文所述元件类似或实质上相同的元件将使用相同的参考编号，且本文中将不再重复相同元件的某些细节或说明。
如图13中所示，形成重布线层200包括依序交替地形成一个或多个聚合物介电层210及一个或多个金属层220。在某些实施例中，如图13中所示，重布线层200直接位于缓冲层116与导电层118a的第一表面S1之间。金属层220夹置在各聚合物介电层210之间，且金属层220的底表面由聚合物介电层210中的最下层暴露出以与传导板118a的第一表面S1连接。由于此种设置，重布线层200的构造与传导板118a的构造一起构成重布线结构20，其中重布线结构20具有多层式结构且充当天线元件190的接地板及馈送线。在一些实施例中，为实现电连接或天线应用，重布线结构20(包括重布线层200及传导板118a)被图案化成形成具有图12A至图12G所说明俯视图的预定目标图案，但本发明实施例并非仅限于此。另外，应注意，重布线层200并非仅限于包括两个介电层及/或一个金属层。在一些实施例中，重布线层200的材料及形成方法与重布线层150的材料及形成方法可实质上相同或不同，但本发明实施例并非仅限于此。
根据一些实施例，一种封装结构包括至少一个管芯、传导板、连接膜、模塑化合物、及多个层间穿孔。所述至少一个管芯被模塑在所述模塑化合物中，且具有有源表面及与所述有源表面相对的背侧表面。所述接地板位于所述至少一个管芯的所述背侧表面上，其中所述接地板具有第一表面及与所述第一表面相对的第二表面，所述接地板的所述第二表面被所述模塑化合物覆盖，且所述接地板的所述第一表面从所述模塑化合物暴露出，其中所述接地板的所述第一表面与所述模塑化合物的第三表面齐平且共面。所述连接膜位于所述至少一个管芯的所述背侧表面与所述接地板的所述第二表面之间，其中所述至少一个管芯、所述模塑化合物及所述接地板接触所述连接膜。所述多个层间穿孔被模塑在所述模塑化合物中，其中所述多个层间穿孔中的至少一者位于所述接地板的所述第二表面上且实体地接触所述接地板的所述第二表面。
根据一些实施例，所述的封装结构中，其中所述连接膜的不同表面分别接触所述至少一个管芯、所述模塑化合物及所述接地板。根据一些实施例，所述的封装结构进一步包括位于所述接地板的所述第一表面上的重布线层，其中所述重布线层电连接到所述接地板，且所述重布线层与所述接地板构成重布线结构。根据一些实施例，所述的封装结构中，其中在所述连接膜上的垂直投影中，所述接地板的面积大于所述至少一个管芯的面积，且所述垂直投影是沿所述至少一个管芯、所述连接膜及所述接地板的堆叠方向投射。根据一些实施例，所述的封装结构中，其中所述接地板包括具有多个第一开口及多个金属线的实心金属板，其中所述实心金属板通过多个第二开口与所述多个金属线中的每一者分隔开。根据一些实施例，所述的封装结构中，其中所述接地板包括多个金属线。根据一些实施例，所述的封装结构中，其中所述接地板包括实心金属板或具有多个狭缝的实心金属板，所述多个狭缝排列成十字形式。根据一些实施例，所述的封装结构中，其中所述接地板包括与多个金属条带内连的多个金属块。根据一些实施例，所述的封装结构中，其中所述接地板与所述至少一个管芯为热耦合，且所述连接膜由导热且导电的材料制成或由导热且电绝缘的材料制成。根据一些实施例，所述的封装结构进一步包括：多个天线元件，位于所述接地板的所述第一表面之上；以及密封体，位于所述多个天线元件与所述接地板之间，其中所述接地板与所述多个天线元件电耦合。
根据一些实施例，一种封装结构包括至少一个管芯、传导板、连接膜、模塑化合物、多个层间穿孔、及多个天线元件。所述至少一个管芯被模塑在所述模塑化合物中。所述传导板位于所述至少一个管芯上，其中所述传导板具有彼此相对的第一表面及第二表面以及连接所述第一表面与所述第二表面的侧壁，其中所述传导板的所述第二表面及所述侧壁被所述模塑化合物模塑，且所述传导板的所述第一表面由所述模塑化合物暴露出，其中所述传导板的所述第一表面与所述模塑化合物的第三表面彼此齐平且共面。所述连接膜位于所述至少一个管芯与所述传导板之间，其中所述连接膜与所述至少一个管芯、所述模塑化合物及所述传导板的所述第二表面实体地连接。所述多个层间穿孔被模塑在所述模塑化合物中，其中所述多个层间穿孔中的至少一者位于所述传导板的所述第二表面上且实体地接触所述传导板的所述第二表面。所述多个天线元件位于所述传导板的所述第一表面之上，其中所述多个天线元件与所述传导板被电耦合。
根据一些实施例，所述的封装结构进一步包括位于所述多个天线元件与所述传导板之间的密封体。根据一些实施例，所述的封装结构中，其中所述传导板与所述至少一个管芯为热耦合，且所述连接膜由导热且导电材的料制成或由导热且电绝缘材料制成。根据一些实施例，所述的封装结构进一步包括：第一重布线层，位于所述模塑化合物的第四表面上，其中所述第一重布线层电连接到所述至少一个管芯及所述多个层间穿孔，且所述模塑化合物的所述第三表面与所述第四表面彼此相对；以及多个导电元件，连接到所述第一重布线层，其中所述第一重布线层位于所述多个导电元件与所述模塑化合物的所述第四表面之间。根据一些实施例，所述的封装结构进一步包括位于所述传导板的所述第一表面上的第二重布线层，其中所述第二重布线层电连接到所述传导板，且所述第二重布线层与所述传导板构成重布线结构。根据一些实施例，所述的封装结构中，其中所述传导板包括具有预定目标图案的传导板。
根据一些实施例，一种用于封装结构的制造方法具有以下步骤：提供载体；形成具有第一表面及与所述第一表面相对的第二表面的传导板，并将所述传导板的所述第一表面直接设置在所述载体上；将设置有连接膜的至少一个管芯设置在所述传导板的所述第二表面上，并通过将所述连接膜夹置在所述至少一个管芯与所述传导板的所述第二表面之间来使所述至少一个管芯与所述传导板的所述第二表面实体地接触；在所述传导板的所述第二表面上形成多个层间穿孔；利用模塑化合物包封所述至少一个管芯、所述连接膜及所述多个层间穿孔并覆盖所述传导板的所述第二表面；以及剥离所述载体，并暴露出所述模塑化合物的第三表面，所述模塑化合物的所述第三表面与所述传导板的所述第一表面齐平且共面。
根据一些实施例，所述的制造方法进一步包括：在所述模塑化合物的第四表面上形成第一重布线层，所述模塑化合物的所述第四表面与所述模塑化合物的所述第三表面相对；以及在所述第一重布线层上设置多个导电元件，其中所述第一重布线层位于所述模塑化合物与所述多个导电元件之间。根据一些实施例，所述的制造方法进一步包括：在所述模塑化合物的所述第三表面之上形成密封体；以及在所述密封体上形成多个天线元件，其中所述密封体位于所述多个天线元件与所述传导板之间，且所述传导板位于所述密封体与所述连接膜之间。根据一些实施例，所述的制造方法进一步包括：在所述模塑化合物的所述第三表面上以及在所述传导板的所述第一表面上形成第二重布线层，其中所述第二重布线层电连接到所述传导板，且所述第二重布线层与所述传导板构成重布线结构。
以上内容概述了若干实施例的特征以使所属领域中的工艺人员可更好地理解本发明实施例的各方面。所属领域中的工艺人员应了解，他们可易于使用本发明实施例作为基础来设计或修改其他工艺及结构以施行本文所介绍实施例的相同目的及/或实现本文所介绍实施例的相同优点。所属领域中的工艺人员还应认识到，此种等效构造并不背离本发明实施例的精神及范围，且在不背离本发明实施例的精神及范围的条件下，他们可对本文作出各种改变、替代、及变更。

Claims (1)

1.一种封装结构，其特征在于，包括：
至少一个管芯，被模塑在模塑化合物中，且具有有源表面及与所述有源表面相对的背侧表面；
接地板，位于所述至少一个管芯的所述背侧表面上，其中所述接地板具有第一表面及与所述第一表面相对的第二表面，所述接地板的所述第二表面被所述模塑化合物覆盖，且所述接地板的所述第一表面从所述模塑化合物暴露出，其中所述接地板的所述第一表面与所述模塑化合物的第三表面齐平且共面；
连接膜，位于所述至少一个管芯的所述背侧表面与所述接地板的所述第二表面之间，其中所述连接膜实体地接触所述至少一个管芯、所述模塑化合物及所述接地板；以及
多个层间穿孔，被模塑在所述模塑化合物中，其中所述多个层间穿孔中的至少一者位于所述接地板的所述第二表面上且实体地接触所述接地板的所述第二表面。
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