CN103155019A - 薄膜晶体管阵列装置、el显示面板、el显示装置、薄膜晶体管阵列装置的制造方法以及el显示面板的制造方法 - Google Patents
薄膜晶体管阵列装置、el显示面板、el显示装置、薄膜晶体管阵列装置的制造方法以及el显示面板的制造方法 Download PDFInfo
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- CN103155019A CN103155019A CN2011800041260A CN201180004126A CN103155019A CN 103155019 A CN103155019 A CN 103155019A CN 2011800041260 A CN2011800041260 A CN 2011800041260A CN 201180004126 A CN201180004126 A CN 201180004126A CN 103155019 A CN103155019 A CN 103155019A
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- 239000010409 thin film Substances 0.000 title claims abstract description 145
- 238000000034 method Methods 0.000 title claims description 80
- 238000004519 manufacturing process Methods 0.000 title claims description 71
- 239000010408 film Substances 0.000 claims abstract description 450
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000000463 material Substances 0.000 claims abstract description 58
- 229910052751 metal Inorganic materials 0.000 claims description 234
- 239000002184 metal Substances 0.000 claims description 234
- 239000010410 layer Substances 0.000 claims description 215
- 239000004065 semiconductor Substances 0.000 claims description 86
- 239000011229 interlayer Substances 0.000 claims description 58
- 230000003647 oxidation Effects 0.000 claims description 29
- 238000007254 oxidation reaction Methods 0.000 claims description 29
- 239000010949 copper Substances 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 12
- 239000012528 membrane Substances 0.000 claims description 12
- 229910052750 molybdenum Inorganic materials 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 239000004615 ingredient Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 239000002346 layers by function Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 238000002161 passivation Methods 0.000 abstract 4
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000008569 process Effects 0.000 description 28
- 238000010586 diagram Methods 0.000 description 26
- 238000002425 crystallisation Methods 0.000 description 16
- 230000008025 crystallization Effects 0.000 description 14
- 238000005530 etching Methods 0.000 description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000005462 imide group Chemical group 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 150000007978 oxazole derivatives Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000003864 performance function Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical compound [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 210000004877 mucosa Anatomy 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/005534 WO2013046280A1 (ja) | 2011-09-30 | 2011-09-30 | 薄膜トランジスタアレイ装置、el表示パネル、el表示装置、薄膜トランジスタアレイ装置の製造方法、el表示パネルの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103155019A true CN103155019A (zh) | 2013-06-12 |
CN103155019B CN103155019B (zh) | 2016-01-20 |
Family
ID=47991729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180004126.0A Active CN103155019B (zh) | 2011-09-30 | 2011-09-30 | 薄膜晶体管阵列装置、el显示面板、el显示装置、薄膜晶体管阵列装置的制造方法以及el显示面板的制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8664662B2 (zh) |
JP (1) | JP5724105B2 (zh) |
CN (1) | CN103155019B (zh) |
WO (1) | WO2013046280A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103646950A (zh) * | 2013-09-12 | 2014-03-19 | 友达光电股份有限公司 | 像素结构 |
CN107851409A (zh) * | 2015-08-03 | 2018-03-27 | 夏普株式会社 | 显示面板 |
CN110476200A (zh) * | 2017-03-29 | 2019-11-19 | 夏普株式会社 | Tft基板、tft基板的制造方法、显示装置 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI831924B (zh) * | 2014-04-25 | 2024-02-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
KR102545253B1 (ko) | 2015-05-28 | 2023-06-19 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR102540372B1 (ko) * | 2015-05-28 | 2023-06-05 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR102654924B1 (ko) * | 2016-06-16 | 2024-04-05 | 삼성디스플레이 주식회사 | 표시장치 |
KR20180062293A (ko) * | 2016-11-30 | 2018-06-08 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
US20200073189A1 (en) * | 2018-08-30 | 2020-03-05 | Sharp Kabushiki Kaisha | Active matrix substrate, display device, and method for manufacturing active matrix substrate |
JP7256622B2 (ja) * | 2018-09-26 | 2023-04-12 | 株式会社ジャパンディスプレイ | 表示装置 |
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JP2000276078A (ja) * | 1999-03-23 | 2000-10-06 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス表示装置 |
JP2006106110A (ja) * | 2004-09-30 | 2006-04-20 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法、並びにテレビジョン装置 |
CN101344695A (zh) * | 2007-07-10 | 2009-01-14 | 三菱电机株式会社 | 显示面板及其制造方法 |
CN100481484C (zh) * | 2002-09-13 | 2009-04-22 | 三洋电机株式会社 | 场致发光显示装置及场致发光显示装置的图案布局方法 |
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JP4530450B2 (ja) * | 1999-09-29 | 2010-08-25 | 三洋電機株式会社 | El表示装置 |
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JP5891504B2 (ja) * | 2011-03-08 | 2016-03-23 | 株式会社Joled | 薄膜トランジスタアレイ装置の製造方法 |
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2011
- 2011-09-30 JP JP2011548711A patent/JP5724105B2/ja active Active
- 2011-09-30 WO PCT/JP2011/005534 patent/WO2013046280A1/ja active Application Filing
- 2011-09-30 CN CN201180004126.0A patent/CN103155019B/zh active Active
-
2012
- 2012-06-04 US US13/487,788 patent/US8664662B2/en active Active
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JP2000276078A (ja) * | 1999-03-23 | 2000-10-06 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス表示装置 |
CN100481484C (zh) * | 2002-09-13 | 2009-04-22 | 三洋电机株式会社 | 场致发光显示装置及场致发光显示装置的图案布局方法 |
JP2006106110A (ja) * | 2004-09-30 | 2006-04-20 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法、並びにテレビジョン装置 |
CN101344695A (zh) * | 2007-07-10 | 2009-01-14 | 三菱电机株式会社 | 显示面板及其制造方法 |
JP5109542B2 (ja) * | 2007-09-18 | 2012-12-26 | カシオ計算機株式会社 | 表示装置の製造方法 |
US20090146930A1 (en) * | 2007-11-22 | 2009-06-11 | Etsuko Nishimura | Organic electro-luminescent display apparatus |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103646950A (zh) * | 2013-09-12 | 2014-03-19 | 友达光电股份有限公司 | 像素结构 |
CN103646950B (zh) * | 2013-09-12 | 2016-02-10 | 友达光电股份有限公司 | 像素结构 |
US9263509B2 (en) | 2013-09-12 | 2016-02-16 | Au Optronics Corporation | Pixel structure having light emitting device above auxiliary electrode |
CN107851409A (zh) * | 2015-08-03 | 2018-03-27 | 夏普株式会社 | 显示面板 |
CN110476200A (zh) * | 2017-03-29 | 2019-11-19 | 夏普株式会社 | Tft基板、tft基板的制造方法、显示装置 |
Also Published As
Publication number | Publication date |
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US8664662B2 (en) | 2014-03-04 |
WO2013046280A1 (ja) | 2013-04-04 |
JP5724105B2 (ja) | 2015-05-27 |
US20130082270A1 (en) | 2013-04-04 |
JPWO2013046280A1 (ja) | 2015-03-26 |
CN103155019B (zh) | 2016-01-20 |
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