CN103147062A - 采用单环戊二烯基三烷氧基铪和锆前体通过原子层沉积制备薄膜的方法 - Google Patents

采用单环戊二烯基三烷氧基铪和锆前体通过原子层沉积制备薄膜的方法 Download PDF

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Publication number
CN103147062A
CN103147062A CN201110448392.4A CN201110448392A CN103147062A CN 103147062 A CN103147062 A CN 103147062A CN 201110448392 A CN201110448392 A CN 201110448392A CN 103147062 A CN103147062 A CN 103147062A
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precursor
group
methylcyclopentadienyl
atomic layer
layer deposition
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Chinese (zh)
Inventor
P·N·黑斯
A·金斯里
宋福全
P·威廉姆斯
T·利斯
H·O·戴维斯
R·奥德拉
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Sigma Aldrich Co LLC
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Sigma Aldrich Co LLC
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Chemistry (AREA)
CN201110448392.4A 2007-09-14 2008-09-10 采用单环戊二烯基三烷氧基铪和锆前体通过原子层沉积制备薄膜的方法 Pending CN103147062A (zh)

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US97245107P 2007-09-14 2007-09-14
US60/972,451 2007-09-14

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CN2008801068593A Active CN101815807B (zh) 2007-09-14 2008-09-10 采用单环戊二烯基三烷氧基铪和锆前体通过原子层沉积制备薄膜的方法

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US (1) US8039062B2 (https=)
EP (1) EP2191034B1 (https=)
JP (1) JP2010539710A (https=)
KR (2) KR20150139628A (https=)
CN (2) CN103147062A (https=)
TW (1) TWI464290B (https=)
WO (1) WO2009036046A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
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CN105986240A (zh) * 2015-03-20 2016-10-05 爱思开海力士有限公司 成膜组合物及利用其制备膜的方法
CN111683953A (zh) * 2018-02-07 2020-09-18 Up化学株式会社 含第ⅳ族金属元素化合物、其制备方法、含其的膜形成用前体组合物及用其的膜形成方法
CN117626218A (zh) * 2023-12-08 2024-03-01 江苏雅克科技股份有限公司 一种基于原子层沉积的ZrxHf(1-x)O2薄膜的制备方法

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EP2191034A1 (en) 2010-06-02
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