CN105986240A - 成膜组合物及利用其制备膜的方法 - Google Patents
成膜组合物及利用其制备膜的方法 Download PDFInfo
- Publication number
- CN105986240A CN105986240A CN201510920334.5A CN201510920334A CN105986240A CN 105986240 A CN105986240 A CN 105986240A CN 201510920334 A CN201510920334 A CN 201510920334A CN 105986240 A CN105986240 A CN 105986240A
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- Prior art keywords
- film
- precursor
- forming composition
- dimethyl amine
- metal
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F17/00—Metallocenes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic System without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/28—Titanium compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150039112A KR102147190B1 (ko) | 2015-03-20 | 2015-03-20 | 막형성조성물 및 그를 이용한 박막 제조 방법 |
KR10-2015-0039112 | 2015-03-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105986240A true CN105986240A (zh) | 2016-10-05 |
CN105986240B CN105986240B (zh) | 2019-05-28 |
Family
ID=56924604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510920334.5A Active CN105986240B (zh) | 2015-03-20 | 2015-12-11 | 成膜组合物及利用其制备膜的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9828402B2 (zh) |
JP (1) | JP6781359B2 (zh) |
KR (1) | KR102147190B1 (zh) |
CN (1) | CN105986240B (zh) |
TW (1) | TWI662145B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110088357A (zh) * | 2016-12-30 | 2019-08-02 | 乔治洛德方法研究和开发液化空气有限公司 | 锆前体、铪前体、钛前体及使用其沉积含第4族的膜 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6796950B2 (ja) * | 2016-05-23 | 2020-12-09 | 株式会社Adeka | 薄膜形成用原料及び薄膜の製造方法 |
US10364259B2 (en) * | 2016-12-30 | 2019-07-30 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same |
US10465289B2 (en) * | 2016-12-30 | 2019-11-05 | L'Air Liquide, Société Anonyme pour l'Etude at l'Exploitation des Procédés Georges Claude | Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same |
KR102418179B1 (ko) * | 2017-07-11 | 2022-07-07 | 주식회사 엘피엔 | 원자층 증착 또는 화학적 기상증착용 전구체로서의 신규한 유기-지르코늄 화합물 및 그 제조방법 |
JP7329256B2 (ja) * | 2018-02-07 | 2023-08-18 | ユーピー ケミカル カンパニー リミテッド | 第4族金属元素含有化合物、その製造方法、それを含む膜形成用前駆体組成物、及びそれを利用する膜の形成方法 |
KR102544077B1 (ko) * | 2020-03-11 | 2023-06-16 | 에스케이하이닉스 주식회사 | 금속막 형성용 전구체 조성물 및 이를 이용한 박막 형성 방법 |
KR102523420B1 (ko) * | 2020-06-16 | 2023-04-19 | 삼성전자주식회사 | 유기금속 화합물 및 이를 이용한 집적회로 소자의 제조 방법 |
KR20210158678A (ko) * | 2020-06-24 | 2021-12-31 | 솔브레인 주식회사 | 박막 형성용 프리커서, 이의 제조방법 및 이를 포함하는 박막 제조 방법 |
WO2023195654A1 (ko) * | 2022-04-05 | 2023-10-12 | 솔브레인 주식회사 | 박막 개질 조성물, 이를 이용한 박막 형성 방법, 이로부터 제조된 반도체 기판 및 반도체 소자 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5900279A (en) * | 1995-11-20 | 1999-05-04 | Tri Chemical Laboratory Inc. | Processes for the chemical vapor deposition and solvent used for the processes |
CN101310037A (zh) * | 2005-11-16 | 2008-11-19 | 西格玛-奥吉奇公司 | 环戊二烯基型铪和锆前体和其在原子层沉积中的用途 |
CN101827956A (zh) * | 2007-09-14 | 2010-09-08 | 西格玛-奥吉奇公司 | 采用基于单环戊二烯基钛的前体通过原子层沉积制备含钛薄膜的方法 |
CN102040620A (zh) * | 2009-10-23 | 2011-05-04 | 气体产品与化学公司 | 用于含金属膜的第4族金属前体 |
CN102086513A (zh) * | 2009-12-07 | 2011-06-08 | 气体产品与化学公司 | 用于沉积含第4族金属的薄膜的液体前体 |
CN102482772A (zh) * | 2009-07-21 | 2012-05-30 | 西格玛-奥吉奇有限责任公司 | 用于形成含钛薄膜的组合物和使用方法 |
CN103097394A (zh) * | 2010-08-27 | 2013-05-08 | 辛格玛艾瑞契有限责任公司 | 钼(iv)酰胺前驱物和其在原子层沉积中的用途 |
CN103147062A (zh) * | 2007-09-14 | 2013-06-12 | 西格玛-奥吉奇有限责任公司 | 采用单环戊二烯基三烷氧基铪和锆前体通过原子层沉积制备薄膜的方法 |
CN103930431A (zh) * | 2011-03-15 | 2014-07-16 | 株式会社Mecharonics | 新型第4b族金属有机化合物及其制备 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI117979B (fi) | 2000-04-14 | 2007-05-15 | Asm Int | Menetelmä oksidiohutkalvojen valmistamiseksi |
US6984591B1 (en) | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
KR100700450B1 (ko) * | 2005-03-08 | 2007-03-28 | 주식회사 메카로닉스 | 원자층증착법에 의한 ito박막 제조방법 및 인듐 박막제조방법 |
US20100112211A1 (en) | 2007-04-12 | 2010-05-06 | Advanced Technology Materials, Inc. | Zirconium, hafnium, titanium, and silicon precursors for ald/cvd |
US20080254218A1 (en) | 2007-04-16 | 2008-10-16 | Air Products And Chemicals, Inc. | Metal Precursor Solutions For Chemical Vapor Deposition |
FR2933404B1 (fr) | 2008-07-04 | 2011-12-30 | Arkema France | N-ethylmethylamine de haute purete et son procede de preparation |
WO2010123531A1 (en) | 2009-04-24 | 2010-10-28 | Advanced Technology Materials, Inc. | Zirconium precursors useful in atomic layer deposition of zirconium-containing films |
KR101263454B1 (ko) | 2011-03-15 | 2013-11-27 | 주식회사 메카로닉스 | 지르코늄 금속을 함유하는 신규한 유기금속화합물 및 그 제조방법 |
KR102215341B1 (ko) * | 2012-12-17 | 2021-02-16 | 솔브레인 주식회사 | 금속 전구체 및 이를 이용하여 제조된 금속 함유 박막 |
-
2015
- 2015-03-20 KR KR1020150039112A patent/KR102147190B1/ko active IP Right Grant
- 2015-09-16 US US14/855,697 patent/US9828402B2/en active Active
- 2015-09-24 TW TW104131588A patent/TWI662145B/zh active
- 2015-12-02 JP JP2015235963A patent/JP6781359B2/ja active Active
- 2015-12-11 CN CN201510920334.5A patent/CN105986240B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5900279A (en) * | 1995-11-20 | 1999-05-04 | Tri Chemical Laboratory Inc. | Processes for the chemical vapor deposition and solvent used for the processes |
CN101310037A (zh) * | 2005-11-16 | 2008-11-19 | 西格玛-奥吉奇公司 | 环戊二烯基型铪和锆前体和其在原子层沉积中的用途 |
CN101827956A (zh) * | 2007-09-14 | 2010-09-08 | 西格玛-奥吉奇公司 | 采用基于单环戊二烯基钛的前体通过原子层沉积制备含钛薄膜的方法 |
CN103147062A (zh) * | 2007-09-14 | 2013-06-12 | 西格玛-奥吉奇有限责任公司 | 采用单环戊二烯基三烷氧基铪和锆前体通过原子层沉积制备薄膜的方法 |
CN102482772A (zh) * | 2009-07-21 | 2012-05-30 | 西格玛-奥吉奇有限责任公司 | 用于形成含钛薄膜的组合物和使用方法 |
CN102040620A (zh) * | 2009-10-23 | 2011-05-04 | 气体产品与化学公司 | 用于含金属膜的第4族金属前体 |
CN102086513A (zh) * | 2009-12-07 | 2011-06-08 | 气体产品与化学公司 | 用于沉积含第4族金属的薄膜的液体前体 |
CN103097394A (zh) * | 2010-08-27 | 2013-05-08 | 辛格玛艾瑞契有限责任公司 | 钼(iv)酰胺前驱物和其在原子层沉积中的用途 |
CN103930431A (zh) * | 2011-03-15 | 2014-07-16 | 株式会社Mecharonics | 新型第4b族金属有机化合物及其制备 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110088357A (zh) * | 2016-12-30 | 2019-08-02 | 乔治洛德方法研究和开发液化空气有限公司 | 锆前体、铪前体、钛前体及使用其沉积含第4族的膜 |
CN110088357B (zh) * | 2016-12-30 | 2022-01-04 | 乔治洛德方法研究和开发液化空气有限公司 | 锆前体、铪前体、钛前体及使用其沉积含第4族的膜 |
Also Published As
Publication number | Publication date |
---|---|
TW201634726A (zh) | 2016-10-01 |
JP6781359B2 (ja) | 2020-11-04 |
US9828402B2 (en) | 2017-11-28 |
KR20160113473A (ko) | 2016-09-29 |
CN105986240B (zh) | 2019-05-28 |
KR102147190B1 (ko) | 2020-08-25 |
US20160273103A1 (en) | 2016-09-22 |
TWI662145B (zh) | 2019-06-11 |
JP2016175890A (ja) | 2016-10-06 |
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Address after: Han Guojingjidao Patentee after: Sk Hynix Inc. Patentee after: Burui Materials Co.,Ltd. Seoul South Korea Address before: Han Guojingjidao Patentee before: Sk Hynix Inc. Patentee before: Sauberryin Patentee before: Sigma Aldrich Ltd. Address after: Han Guojingjidao Patentee after: Sk Hynix Inc. Patentee after: Burui Holding Co.,Ltd. Seoul South Korea Address before: Han Guojingjidao Patentee before: Sk Hynix Inc. Patentee before: SOULBRAIN Co.,Ltd. |
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Effective date of registration: 20210301 Address after: Han Guojingjidao Patentee after: Sk Hynix Inc. Patentee after: SOULBRAIN CO.,LTD. Address before: Han Guojingjidao Patentee before: Sk Hynix Inc. Patentee before: Burui Holding Co.,Ltd. Seoul South Korea Effective date of registration: 20210301 Address after: Han Guojingjidao Patentee after: Sk Hynix Inc. Patentee after: SOULBRAIN CO.,LTD. Address before: Han Guojingjidao Patentee before: Sk Hynix Inc. Patentee before: Burui Materials Co.,Ltd. Seoul South Korea |