KR20150139628A - 하프늄과 지르코늄계 전구체를 이용한 원자층 증착에 의한 박막의 제조 방법 - Google Patents

하프늄과 지르코늄계 전구체를 이용한 원자층 증착에 의한 박막의 제조 방법 Download PDF

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KR20150139628A
KR20150139628A KR1020157033746A KR20157033746A KR20150139628A KR 20150139628 A KR20150139628 A KR 20150139628A KR 1020157033746 A KR1020157033746 A KR 1020157033746A KR 20157033746 A KR20157033746 A KR 20157033746A KR 20150139628 A KR20150139628 A KR 20150139628A
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precursors
ald
metal
precursor
hafnium
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Korean (ko)
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피터 니콜라스 헤이스
앤드류 킹슬리
푸콴 송
폴 윌리엄스
토마스 리즈
히웰 오웬 데이비스
라예쉬 오데드라
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시그마 알드리치 컴퍼니 엘엘씨
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Chemistry (AREA)
KR1020157033746A 2007-09-14 2008-09-10 하프늄과 지르코늄계 전구체를 이용한 원자층 증착에 의한 박막의 제조 방법 Ceased KR20150139628A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US97245107P 2007-09-14 2007-09-14
US60/972,451 2007-09-14
PCT/US2008/075831 WO2009036046A1 (en) 2007-09-14 2008-09-10 Methods of preparing thin films by atomic layer deposition using monocyclopentadienyl trialkoxy hafnium and zirconium precursors

Related Parent Applications (1)

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KR1020107008048A Division KR20100072021A (ko) 2007-09-14 2008-09-10 하프늄과 지르코늄계 전구체를 이용한 원자층 증착에 의한 박막의 제조 방법

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KR20150139628A true KR20150139628A (ko) 2015-12-11

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KR1020157033746A Ceased KR20150139628A (ko) 2007-09-14 2008-09-10 하프늄과 지르코늄계 전구체를 이용한 원자층 증착에 의한 박막의 제조 방법
KR1020107008048A Ceased KR20100072021A (ko) 2007-09-14 2008-09-10 하프늄과 지르코늄계 전구체를 이용한 원자층 증착에 의한 박막의 제조 방법

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US (1) US8039062B2 (https=)
EP (1) EP2191034B1 (https=)
JP (1) JP2010539710A (https=)
KR (2) KR20150139628A (https=)
CN (2) CN101815807B (https=)
TW (1) TWI464290B (https=)
WO (1) WO2009036046A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
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WO2017135715A1 (ko) * 2016-02-03 2017-08-10 주식회사 유피케미칼 4 족 금속 원소-함유 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법
WO2022245039A1 (ko) * 2021-05-21 2022-11-24 주식회사 아이켐스 신규한 하프늄 함유 화합물, 이를 함유하는 하프늄 전구체 조성물, 상기 하프늄 전구체 조성물을 이용한 하프늄 함유 박막 및 이의 제조방법.
WO2023219446A1 (ko) * 2022-05-13 2023-11-16 주식회사 유피케미칼 4족 금속 원소-함유 전구체 화합물을 포함하는 막 증착용 조성물, 및 이를 이용한 막 형성 방법
WO2024050011A1 (en) * 2022-09-02 2024-03-07 Entegris, Inc. Precursors containing fluorinated alkoxides and amides
KR102855353B1 (ko) * 2024-12-27 2025-09-08 주식회사 티에스피 풀벤계 박막 형성 전구체

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* Cited by examiner, † Cited by third party
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GB2432363B (en) 2005-11-16 2010-06-23 Epichem Ltd Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition
EP2049705A4 (en) * 2006-07-20 2014-10-29 Linde Inc IMPROVED METHODS FOR DEPOSITION OF ATOMIC LAYERS
US8795771B2 (en) 2006-10-27 2014-08-05 Sean T. Barry ALD of metal-containing films using cyclopentadienyl compounds
TWI425110B (zh) 2007-07-24 2014-02-01 辛格瑪艾瑞契公司 以化學相沉積法製造含金屬薄膜之方法
TWI382987B (zh) * 2007-07-24 2013-01-21 Sigma Aldrich Co 應用於化學相沉積製程的有機金屬前驅物
CN101827956A (zh) 2007-09-14 2010-09-08 西格玛-奥吉奇公司 采用基于单环戊二烯基钛的前体通过原子层沉积制备含钛薄膜的方法
EP2191034B1 (en) 2007-09-14 2013-03-13 Sigma-Aldrich Co. LLC Methods of preparing thin films by atomic layer deposition using monocyclopentadienyl triamino zirconium precursors
CN101959897A (zh) 2008-02-27 2011-01-26 乔治洛德方法研究和开发液化空气有限公司 使用原子层沉积(ald)法在基底上形成含钛层的方法
TW200949939A (en) * 2008-05-23 2009-12-01 Sigma Aldrich Co High-k dielectric films and methods of producing using titanium-based β -diketonate precursors
TWI467045B (zh) 2008-05-23 2015-01-01 Sigma Aldrich Co 高介電常數電介質薄膜與使用鈰基前驅物製造高介電常數電介質薄膜之方法
US20100290968A1 (en) * 2009-05-13 2010-11-18 Ce Ma Solution based lanthanide and group iii precursors for atomic layer deposition
WO2011005653A1 (en) * 2009-07-06 2011-01-13 Llinde Aktiengesellschaft Solution based precursors
SG178267A1 (en) 2009-08-07 2012-03-29 Sigma Aldrich Co Llc High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films
CN102712662A (zh) * 2009-08-14 2012-10-03 乔治洛德方法研究和开发液化空气有限公司 含铪和锆的前体及使用它的方法
US8592606B2 (en) 2009-12-07 2013-11-26 Air Products And Chemicals, Inc. Liquid precursor for depositing group 4 metal containing films
TWI509695B (zh) 2010-06-10 2015-11-21 Ａｓｍ國際股份有限公司 使膜選擇性沈積於基板上的方法
SG187920A1 (en) 2010-08-27 2013-03-28 Sigma Aldrich Co Llc Molybdenum (iv) amide precursors and use thereof in atomic layer deposition
JP5957017B2 (ja) 2011-03-15 2016-07-27 メカロニックス シーオー． エルティディ．Ｍｅｃｈａｒｏｎｉｃｓ Ｃｏ． Ｌｔｄ． 新規な４ｂ族有機金属化合物及びその製造方法
KR101263454B1 (ko) 2011-03-15 2013-11-27 주식회사 메카로닉스 지르코늄 금속을 함유하는 신규한 유기금속화합물 및 그 제조방법
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US9499571B2 (en) * 2014-12-23 2016-11-22 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films
US9663547B2 (en) * 2014-12-23 2017-05-30 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing films
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