TWI464290B - 利用含鉿與含鋯前驅物以原子層沉積製備薄膜之方法 - Google Patents

利用含鉿與含鋯前驅物以原子層沉積製備薄膜之方法 Download PDF

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Publication number
TWI464290B
TWI464290B TW097134790A TW97134790A TWI464290B TW I464290 B TWI464290 B TW I464290B TW 097134790 A TW097134790 A TW 097134790A TW 97134790 A TW97134790 A TW 97134790A TW I464290 B TWI464290 B TW I464290B
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Taiwan
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group
zirconium
precursor
butoxy
atomic layer
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TW097134790A
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Chinese (zh)
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TW200912024A (en
Inventor
彼得 尼可拉斯 海斯
安德魯 金斯里
宋福泉
保羅 威廉斯
湯瑪士 利斯
駭威爾 歐文 大衛斯
雷傑斯 奧德達
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辛格瑪艾瑞契公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Chemistry (AREA)
TW097134790A 2007-09-14 2008-09-11 利用含鉿與含鋯前驅物以原子層沉積製備薄膜之方法 TWI464290B (zh)

Applications Claiming Priority (1)

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US97245107P 2007-09-14 2007-09-14

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TW200912024A TW200912024A (en) 2009-03-16
TWI464290B true TWI464290B (zh) 2014-12-11

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Country Status (7)

Country Link
US (1) US8039062B2 (https=)
EP (1) EP2191034B1 (https=)
JP (1) JP2010539710A (https=)
KR (2) KR20150139628A (https=)
CN (2) CN101815807B (https=)
TW (1) TWI464290B (https=)
WO (1) WO2009036046A1 (https=)

Cited By (1)

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TWI862807B (zh) 2020-03-30 2024-11-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 相對於金屬表面在介電表面上之氧化矽的選擇性沉積
TW202140832A (zh) 2020-03-30 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽在金屬表面上之選擇性沉積
KR102562274B1 (ko) 2020-12-17 2023-08-01 주식회사 이지티엠 유기 금속 전구체 화합물
KR20220157741A (ko) * 2021-05-21 2022-11-29 주식회사 아이켐스 신규한 하프늄 함유 화합물, 이를 함유하는 하프늄 전구체 조성물, 상기 하프늄 전구체 조성물을 이용한 하프늄 함유 박막 및 이의 제조방법.
WO2023219446A1 (ko) * 2022-05-13 2023-11-16 주식회사 유피케미칼 4족 금속 원소-함유 전구체 화합물을 포함하는 막 증착용 조성물, 및 이를 이용한 막 형성 방법
CN119948037A (zh) * 2022-09-02 2025-05-06 恩特格里斯公司 含有氟化烷氧化物和酰胺的前体
KR20250017860A (ko) * 2023-07-28 2025-02-04 에스케이트리켐 주식회사 금속-규소 함유 박막 형성용 전구체, 이를 이용한 박막 증착 방법, 및 상기 박막을 포함하는 반도체 소자.
CN117660926A (zh) * 2023-12-07 2024-03-08 江苏雅克科技股份有限公司 一种基于新型前驱体材料的氧化锆薄膜制备方法
CN117626218A (zh) * 2023-12-08 2024-03-01 江苏雅克科技股份有限公司 一种基于原子层沉积的ZrxHf(1-x)O2薄膜的制备方法
KR102855353B1 (ko) * 2024-12-27 2025-09-08 주식회사 티에스피 풀벤계 박막 형성 전구체

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