JP2010539710A - ハフニウム系前駆体およびジルコニウム系前駆体を用いる原子層成長による薄膜の作製方法 - Google Patents

ハフニウム系前駆体およびジルコニウム系前駆体を用いる原子層成長による薄膜の作製方法 Download PDF

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Publication number
JP2010539710A
JP2010539710A JP2010524955A JP2010524955A JP2010539710A JP 2010539710 A JP2010539710 A JP 2010539710A JP 2010524955 A JP2010524955 A JP 2010524955A JP 2010524955 A JP2010524955 A JP 2010524955A JP 2010539710 A JP2010539710 A JP 2010539710A
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JP
Japan
Prior art keywords
precursor
methylcyclopentadienyl
group
otbu
substrate
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Pending
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JP2010524955A
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Japanese (ja)
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JP2010539710A5 (https=
Inventor
ヘイズ，ピーター・ニコラス
キングスリー，アンドリュー
ソング，フクァン
ウィリアムズ，ポール
リース，トーマス
ディヴィス，ハイウェル・オーウェン
オデドラ，ラジェシュ
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Sigma Aldrich Co LLC
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Sigma Aldrich Co LLC
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Publication of JP2010539710A publication Critical patent/JP2010539710A/ja
Publication of JP2010539710A5 publication Critical patent/JP2010539710A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Chemistry (AREA)
JP2010524955A 2007-09-14 2008-09-10 ハフニウム系前駆体およびジルコニウム系前駆体を用いる原子層成長による薄膜の作製方法 Pending JP2010539710A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97245107P 2007-09-14 2007-09-14
PCT/US2008/075831 WO2009036046A1 (en) 2007-09-14 2008-09-10 Methods of preparing thin films by atomic layer deposition using monocyclopentadienyl trialkoxy hafnium and zirconium precursors

Publications (2)

Publication Number Publication Date
JP2010539710A true JP2010539710A (ja) 2010-12-16
JP2010539710A5 JP2010539710A5 (https=) 2011-10-27

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JP2010524955A Pending JP2010539710A (ja) 2007-09-14 2008-09-10 ハフニウム系前駆体およびジルコニウム系前駆体を用いる原子層成長による薄膜の作製方法

Country Status (7)

Country Link
US (1) US8039062B2 (https=)
EP (1) EP2191034B1 (https=)
JP (1) JP2010539710A (https=)
KR (2) KR20150139628A (https=)
CN (2) CN101815807B (https=)
TW (1) TWI464290B (https=)
WO (1) WO2009036046A1 (https=)

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JP2012201652A (ja) * 2011-03-28 2012-10-22 Ube Industries Ltd ジルコニウムアミド化合物の製造方法
KR101569447B1 (ko) 2014-04-29 2015-11-16 (주)디엔에프 지르코늄 산화물 박막 형성용 전구체 화합물, 이의 제조방법 및 이를 이용한 박막의 제조방법
JP2017513213A (ja) * 2014-02-26 2017-05-25 ユージーン テクノロジー マテリアルズ カンパニー リミテッドＥｕｇｅｎｅ Ｔｅｃｈｎｏｌｏｇｙ Ｍａｔｅｒｉａｌｓ Ｃｏ．， Ｌｔｄ． ジルコニウム含有膜形成用の前駆体組成物、及びそれを利用したジルコニウム含有膜の形成方法
JP2020504907A (ja) * 2016-12-30 2020-02-13 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ジルコニウム、ハフニウム、チタン前駆体およびそれを用いた４族含有膜の堆積
JP2021512901A (ja) * 2018-02-07 2021-05-20 ユーピー ケミカル カンパニー リミテッド 第４族金属元素含有化合物、その製造方法、それを含む膜形成用前駆体組成物、及びそれを利用する膜の形成方法
JP2025515587A (ja) * 2022-05-13 2025-05-20 ユーピー ケミカル カンパニー リミテッド 第４族金属元素含有前駆体化合物を含む成膜用組成物、及び、それを用いた膜を形成する方法

Families Citing this family (77)

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GB2432363B (en) 2005-11-16 2010-06-23 Epichem Ltd Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition
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US8795771B2 (en) 2006-10-27 2014-08-05 Sean T. Barry ALD of metal-containing films using cyclopentadienyl compounds
TWI425110B (zh) 2007-07-24 2014-02-01 辛格瑪艾瑞契公司 以化學相沉積法製造含金屬薄膜之方法
TWI382987B (zh) * 2007-07-24 2013-01-21 Sigma Aldrich Co 應用於化學相沉積製程的有機金屬前驅物
CN101827956A (zh) 2007-09-14 2010-09-08 西格玛-奥吉奇公司 采用基于单环戊二烯基钛的前体通过原子层沉积制备含钛薄膜的方法
EP2191034B1 (en) 2007-09-14 2013-03-13 Sigma-Aldrich Co. LLC Methods of preparing thin films by atomic layer deposition using monocyclopentadienyl triamino zirconium precursors
CN101959897A (zh) 2008-02-27 2011-01-26 乔治洛德方法研究和开发液化空气有限公司 使用原子层沉积(ald)法在基底上形成含钛层的方法
TW200949939A (en) * 2008-05-23 2009-12-01 Sigma Aldrich Co High-k dielectric films and methods of producing using titanium-based β -diketonate precursors
TWI467045B (zh) 2008-05-23 2015-01-01 Sigma Aldrich Co 高介電常數電介質薄膜與使用鈰基前驅物製造高介電常數電介質薄膜之方法
US20100290968A1 (en) * 2009-05-13 2010-11-18 Ce Ma Solution based lanthanide and group iii precursors for atomic layer deposition
WO2011005653A1 (en) * 2009-07-06 2011-01-13 Llinde Aktiengesellschaft Solution based precursors
SG178267A1 (en) 2009-08-07 2012-03-29 Sigma Aldrich Co Llc High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films
CN102712662A (zh) * 2009-08-14 2012-10-03 乔治洛德方法研究和开发液化空气有限公司 含铪和锆的前体及使用它的方法
US8592606B2 (en) 2009-12-07 2013-11-26 Air Products And Chemicals, Inc. Liquid precursor for depositing group 4 metal containing films
TWI509695B (zh) 2010-06-10 2015-11-21 Ａｓｍ國際股份有限公司 使膜選擇性沈積於基板上的方法
SG187920A1 (en) 2010-08-27 2013-03-28 Sigma Aldrich Co Llc Molybdenum (iv) amide precursors and use thereof in atomic layer deposition
JP5957017B2 (ja) 2011-03-15 2016-07-27 メカロニックス シーオー． エルティディ．Ｍｅｃｈａｒｏｎｉｃｓ Ｃｏ． Ｌｔｄ． 新規な４ｂ族有機金属化合物及びその製造方法
KR101263454B1 (ko) 2011-03-15 2013-11-27 주식회사 메카로닉스 지르코늄 금속을 함유하는 신규한 유기금속화합물 및 그 제조방법
KR101395644B1 (ko) * 2012-02-08 2014-05-16 주식회사 메카로닉스 신규한 4-비이 족 금속 유기화합물 및 그 제조방법
JP5675458B2 (ja) * 2011-03-25 2015-02-25 東京エレクトロン株式会社 成膜方法、成膜装置および記憶媒体
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WO2013112383A1 (en) 2012-01-26 2013-08-01 Sigma-Aldrich Co. Llc Molybdenum allyl complexes and use thereof in thin film deposition
WO2013157901A1 (ko) * 2012-04-20 2013-10-24 주식회사 유피케미칼 4 족 전이금속-함유 전구체 화합물, 이의 제조 방법, 이를 포함하는 전구체 조성물, 및 이를 이용하는 박막의 증착 방법
KR20140121761A (ko) * 2013-04-08 2014-10-16 주식회사 유피케미칼 4 족 전이금속-함유 전구체 화합물 및 이를 이용하는 박막의 증착 방법
US9895715B2 (en) 2014-02-04 2018-02-20 Asm Ip Holding B.V. Selective deposition of metals, metal oxides, and dielectrics
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US11094535B2 (en) 2017-02-14 2021-08-17 Asm Ip Holding B.V. Selective passivation and selective deposition
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JP7183187B2 (ja) 2017-05-16 2022-12-05 エーエスエム アイピー ホールディング ビー．ブイ． 誘電体上の酸化物の選択的ｐｅａｌｄ
JP6948159B2 (ja) * 2017-05-31 2021-10-13 株式会社Adeka 新規な化合物、薄膜形成用原料及び薄膜の製造方法
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TW202140832A (zh) 2020-03-30 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽在金屬表面上之選擇性沉積
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KR20220157741A (ko) * 2021-05-21 2022-11-29 주식회사 아이켐스 신규한 하프늄 함유 화합물, 이를 함유하는 하프늄 전구체 조성물, 상기 하프늄 전구체 조성물을 이용한 하프늄 함유 박막 및 이의 제조방법.
CN119948037A (zh) * 2022-09-02 2025-05-06 恩特格里斯公司 含有氟化烷氧化物和酰胺的前体
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CN117660926A (zh) * 2023-12-07 2024-03-08 江苏雅克科技股份有限公司 一种基于新型前驱体材料的氧化锆薄膜制备方法
CN117626218A (zh) * 2023-12-08 2024-03-01 江苏雅克科技股份有限公司 一种基于原子层沉积的ZrxHf(1-x)O2薄膜的制备方法
KR102855353B1 (ko) * 2024-12-27 2025-09-08 주식회사 티에스피 풀벤계 박막 형성 전구체

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