JP2010539710A5 - - Google Patents

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Publication number
JP2010539710A5
JP2010539710A5 JP2010524955A JP2010524955A JP2010539710A5 JP 2010539710 A5 JP2010539710 A5 JP 2010539710A5 JP 2010524955 A JP2010524955 A JP 2010524955A JP 2010524955 A JP2010524955 A JP 2010524955A JP 2010539710 A5 JP2010539710 A5 JP 2010539710A5
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Japan
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methylcyclopentadienyl
precursor
propylcyclopentadienyl
ethylcyclopentadienyl
otbu
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JP2010524955A
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English (en)
Japanese (ja)
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JP2010539710A (ja
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Priority claimed from PCT/US2008/075831 external-priority patent/WO2009036046A1/en
Publication of JP2010539710A publication Critical patent/JP2010539710A/ja
Publication of JP2010539710A5 publication Critical patent/JP2010539710A5/ja
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JP2010524955A 2007-09-14 2008-09-10 ハフニウム系前駆体およびジルコニウム系前駆体を用いる原子層成長による薄膜の作製方法 Pending JP2010539710A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97245107P 2007-09-14 2007-09-14
PCT/US2008/075831 WO2009036046A1 (en) 2007-09-14 2008-09-10 Methods of preparing thin films by atomic layer deposition using monocyclopentadienyl trialkoxy hafnium and zirconium precursors

Publications (2)

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JP2010539710A JP2010539710A (ja) 2010-12-16
JP2010539710A5 true JP2010539710A5 (https=) 2011-10-27

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JP2010524955A Pending JP2010539710A (ja) 2007-09-14 2008-09-10 ハフニウム系前駆体およびジルコニウム系前駆体を用いる原子層成長による薄膜の作製方法

Country Status (7)

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US (1) US8039062B2 (https=)
EP (1) EP2191034B1 (https=)
JP (1) JP2010539710A (https=)
KR (2) KR20150139628A (https=)
CN (2) CN101815807B (https=)
TW (1) TWI464290B (https=)
WO (1) WO2009036046A1 (https=)

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KR102853690B1 (ko) * 2019-12-02 2025-09-02 솔브레인 주식회사 박막 형성용 성장 억제제, 이를 이용한 박막 형성 방법 및 이로부터 제조된 반도체 기판
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TWI862807B (zh) 2020-03-30 2024-11-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 相對於金屬表面在介電表面上之氧化矽的選擇性沉積
TW202140832A (zh) 2020-03-30 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽在金屬表面上之選擇性沉積
KR102562274B1 (ko) 2020-12-17 2023-08-01 주식회사 이지티엠 유기 금속 전구체 화합물
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WO2023219446A1 (ko) * 2022-05-13 2023-11-16 주식회사 유피케미칼 4족 금속 원소-함유 전구체 화합물을 포함하는 막 증착용 조성물, 및 이를 이용한 막 형성 방법
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KR20250017860A (ko) * 2023-07-28 2025-02-04 에스케이트리켐 주식회사 금속-규소 함유 박막 형성용 전구체, 이를 이용한 박막 증착 방법, 및 상기 박막을 포함하는 반도체 소자.
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CN101959897A (zh) 2008-02-27 2011-01-26 乔治洛德方法研究和开发液化空气有限公司 使用原子层沉积(ald)法在基底上形成含钛层的方法

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