CN103137589A - 堆叠封装（PoP）的结构和方法 - Google Patents

堆叠封装（PoP）的结构和方法 Download PDF

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CN103137589A
CN103137589A CN2012101938000A CN201210193800A CN103137589A CN 103137589 A CN103137589 A CN 103137589A CN 2012101938000 A CN2012101938000 A CN 2012101938000A CN 201210193800 A CN201210193800 A CN 201210193800A CN 103137589 A CN103137589 A CN 103137589A
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China
Prior art keywords
stud balls
pad
substrate
balls
stud
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CN2012101938000A
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余振华
李明机
刘重希
郑明达
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Publication of CN103137589A publication Critical patent/CN103137589A/zh
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Abstract

本发明涉及堆叠封装(PoP)的结构和形成PoP结构的方法。根据一个实施例，结构包括第一衬底、螺柱球、管芯、第二衬底和电连接件。螺柱球与第一衬底的第一表面相接合。管芯附接至第一衬底的第一表面。电连接件与第二衬底连接，以及对应的电连接件与对应的螺柱球相连。

Description

堆叠封装(PoP)的结构和方法
相关申请的交叉参考 
本申请要求于2011年11月30日提交的标题为“Package-On-Package(PoP)Structure and Method”的美国临时专利申请第61/565,280号的优先权，其全部内容结合于此作为参考。 
技术领域
本发明总体涉及半导体领域，更具体地，本发明涉及堆叠封装(PoP)的结构和方法。 
背景技术
电子仪器可以分为由例如集成电路(IC)芯片、封装、印刷电路板(PCB)、和系统这些器件组成的简单层级结构。封装是在电子器件(例如，计算机芯片)和PCB之间的接口。器件由半导体材料(例如，硅)制成。使用引线结合(WB)技术、卷带式自动接合(TAB)技术或倒装芯片(FC)凸块装配技术(bumping assembly technique)可以将集成电路装配成封装，例如，四边扁平封装(QFP)、引脚栅格阵列(PGA)或球栅阵列(BGA)。然后，封装器件与印刷电路板或其他类型的衬底直接连接，这被定义为二级封装。 
球栅阵列(BGA)封装技术通常是先进的半导体封装技术，其特征为：半导体芯片安装在衬底的前表面上，并且诸如焊球的多个导电元件(它们被排列成矩阵阵列，习惯上称为球栅阵列)位于衬底的背面。球栅阵列可以使半导体封装与外部PCB或其他电子器件焊接和电连接。可以将BGA封装应用到存储器中，例如，动态随机存取存储器等。 
基本的倒装芯片(FC)封装技术包括IC、互连系统和衬底。功能芯片连接到具有多个焊料凸块的衬底，其中，焊料凸块在芯片和衬底之间形成 冶金互连。功能芯片、焊料凸块和衬底形成倒装芯片封装。另外，多个球形成球栅阵列(BGA)。 
可以使用引线结合将芯片元件(例如，贴片电阻器或贴片电容器)电连接到衬底。两种功能的芯片堆叠在多个衬底层的顶部。芯片通过多条焊接金线连接到衬底。也可以使用其他形式的线，例如，铝线。功能芯片、金线和衬底形成引线结合(WB)封装。 
堆叠封装(PoP)是一种可以实现垂直结合的集成电路封装技术，例如，离散逻辑(discrete logic)和存储球栅阵列(BGA)封装。两个或两个以上的封装通过标准接口使一个安装在另一个的顶部(例如，堆叠)，以在它们之间路由信号。这可以实现更高的密度，例如，在移动电话/PDA市场中。 
发明内容
为解决上述问题，本发明提供了一种结构，包括：第一衬底；螺柱球，连接至所述第一衬底的第一表面；管芯，连接至所述第一衬底的第一表面；第二衬底；以及电连接件，连接至所述第二衬底，所述电连接件中的相应电连接件与所述螺柱球中的相应螺柱球相连接。 
其中，所述第一衬底包括焊盘，焊盘保护层中的相应焊盘保护层位于所述焊盘中的相应焊盘上方，所述螺柱球中的相应螺柱球接合至所述焊盘保护层中的相应焊盘保护层。 
该结构进一步包括：位于所述螺柱球中的相应螺柱球的表面上的保护涂层中的相应保护涂层，所述保护涂层中的相应保护涂层位于所述螺柱球中的相应螺柱球和所述电连接件中的相应电连接件之间。 
其中，所述第一衬底包括焊盘，所述焊盘中的相应焊盘包括处理表面中的相应处理表面、所述螺柱球中的相应螺柱球接合至所述处理表面中的相应处理表面。 
其中，所述第一衬底包括焊盘，所述螺柱球中的相应螺柱球直接接合至所述焊盘中的相应焊盘。 
其中，每个所述螺柱球均包括(i)单螺柱球、(ii)具有拉长尾部的单螺柱球、(iii)堆叠的至少两个单螺柱球、(iv)堆叠在第二单螺柱球上 的具有拉长尾部的第一单螺柱球或者(V)它们的组合。 
其中，所述单螺柱球中的相应单螺柱球和所述电连接件中的相应电连接件形成局部接合。 
该结构进一步包括：金属间化合物，界面连接在所述螺柱球中的相应螺柱球和所述电连接件中的相应电连接件之间的。 
此外，还提供了一种结构，包括：第一衬底，包括位于所述第一衬底的第一表面上的第一焊盘、附接至所述第一衬底的所述第一表面的管芯；第二衬底，包括位于所述第二衬底的第一表面上的第二焊盘；螺柱球，位于所述第一焊盘上；以及焊料连接件，将所述螺柱球连接至所述第二焊盘。 
其中，所述第一焊盘包括焊盘保护层或与所述螺柱球相邻的处理表面。 
其中，所述螺柱球通过金属-金属接合部直接接合至所述第一焊盘。 
其中，所述螺柱球包括在与所述焊料连接件界面连接的表面上的保护涂层。 
其中，所述螺柱球是具有拉长尾部的单螺柱球。 
其中，所述螺柱球包括堆叠在第二螺柱球上的第一螺柱球。 
其中，所述第一螺柱球是具有拉长尾部的单螺柱球，所述第二螺柱球是单螺柱球。
其中，所述焊料连接件不完全覆盖所述螺柱球的表面，所述表面不接合至所述第二焊盘。 
此外，还提供了一种结构，包括：第一接合焊盘，位于第一衬底的第一表面上；管芯，附接至所述第一衬底的所述第一表面；第二接合焊盘，位于第二衬底的第二表面上，所述第一表面与所述第二表面相对，所述管芯设置在所述第一表面和所述第二表面之间；螺柱球，位于所述第一接合焊盘上；以及焊料，将所述螺柱球机械地连接至所述第二接合焊盘。 
其中，所述第一接合焊盘(i)包括与所述螺柱球相邻的焊盘保护层、(ii)包括与所述螺柱球相邻的处理表面或者(iii)通过金属-金属接合部直接接合至所述螺柱球。 
其中，所述螺柱球包括位于与所述焊料界面连接的表面上的保护涂层。 
其中，所述螺柱球包括(i)单螺柱球、(ii)具有拉长尾部的单螺柱 球、(iii)堆叠的至少两个单螺柱球、(iv)堆叠在第二单螺柱球上的具有拉长尾部的第一单螺柱球或(V)它们的组合。 
附图说明
为了更好地理解实施例及其优点，现将结合附图所进行的以下描述作为参考，其中： 
图1至8是根据实施例示出的形成堆叠封装(PoP)结构的第一种方法； 
图9至14是根据实施例示出的形成PoP结构的第二种方法； 
图15至19是根据实施例示出的形成PoP结构的第三种方法； 
图20是根据实施例示出的单螺柱球(single stud bulb)； 
图21是根据实施例示出的具有拉长尾部的单螺柱球； 
图22是根据实施例示出的包括相同材料的堆叠的单螺柱球； 
图23是根据实施例示出的包括不同材料的堆叠的单螺柱球； 
图24是根据实施例示出的堆叠的单螺柱球，其中一个单螺柱球具有拉长尾部； 
图25是根据实施例示出的单螺柱球和湿至焊盘保护层的回流焊料连接件的接合点； 
图26是根据实施例示出的具有较大的高度和/或拉长尾部的单螺柱球和湿至焊盘保护层的回流焊料连接件的接合点； 
图27是根据实施例示出的单螺柱球和未湿至焊盘保护层的回流焊料连接件的接合点； 
图28是根据实施例示出的具有较大的高度和/或拉长尾部的单螺柱球和未湿至焊盘保护层的回流焊料连接件的接合点； 
图29是根据实施例示出的局部接合； 
图30是根据实施例示出的单螺柱球和在焊盘保护层上的金属间化合物(IMC)的接合点； 
图31是根据实施例示出的单螺柱球和在单螺柱球上的IMC的接合点； 
图32是根据实施例示出的单螺柱球和在焊盘保护层与单螺柱球上的IMC的接合点； 
图33是根据实施例示出的IMC和螺柱球的局部接合； 
图34是根据实施例示出的封装结构的元件的布局图； 
图35是根据实施例示出的在图34中的封装结构的元件的截面图； 
图36是根据实施例示出的PoP结构的实例； 
图37是根据实施例示出的包括螺柱球的封装元件的截面图，该螺柱球具有延伸至管芯顶面的上面的高度； 
图38是根据实施例示出的包括堆叠的单螺柱球的封装元件的截面图，该单螺柱球具有延伸至管芯顶面的上面的高度； 
图39是根据实施例示出的包括具有拉长尾部的螺柱球的封装元件的截面图，该螺柱球具有延伸至管芯顶面的上面的高度；以及 
图40是根据实施例示出的包括螺柱球的封装元件的截面图，该螺柱球具有未延伸至管芯顶面的上面的高度。 
具体实施方式
下面，详细讨论本发明的实施例的制造和使用。然而，应该理解，本发明提供了许多可以在各种具体环境中实现的可应用的概念。所讨论的具体实施例仅仅示出制造和使用本发明的具体方式，而不用于限制本发明的范围。 
实施例在将特定的背景下进行描述，即，封装封装(PoP)结构。然而，其它实施例也可以用于描述其他封装或结构，例如，三维集成电路(3DIC)。 
应当指出的是，虽然本文是根据特定的顺序明确地讨论方法实施例的，但是可以以任何逻辑顺序执行实施例所表述的方法的步骤。另外，在各个图示和示例性实施例中，相同的参考数字用于指代相同的元件。 
图1至8根据一个实施例示出了形成PoP结构的第一种方法。在图1中，提供第一衬底10(例如，底部衬底)，在第一衬底10的顶面上方具有焊盘12。提供有机保焊剂(organic solderability preservative，OSP)14位于每个焊盘12的顶面上方。第一衬底10可以是例如有机衬底、半导体晶圆、玻璃、硅中介层、有机中介层等或它们的组合。例如，第一衬底10可以包括非切单或切单(singulated)管芯和/或中介层。每个管芯和/或中介 层可以包括有源和/或无源器件和/或通孔。第一衬底10还可以包括各种材料层，例如，介电层、钝化层和/或金属化层。 
在一个实施例中，焊盘12形成为通过钝化层直接连接到顶部金属化层中的对应图案。在另一个实施例中，每个焊盘12都是顶部金属化层中的图案。在又一个实施例中，焊盘12可以是通孔的对应暴露部分和/或可以形成在通孔的对应部分上。在一个实施例中，焊盘12是金属、合金或金属层和/或金属合金层。在本实施例中，焊盘12是铜，在其他实施例中，焊盘12可以包括铜、金、铝、铝铜(Al(Cu))、镍或它们的组合。焊盘12向第一衬底10内和/或耦合至第一衬底10的各种器件和/或元件提供外部的电连接。 
在图2中，OSP 14从每个焊盘12移除，以露出焊盘12的顶面。可以使用可接受的移除工艺来移除OSP 14，例如，在衬底上分布焊剂、化学溶液(酸或碱)等或它们的组合。 
在图3中，焊盘保护层16形成在每个焊盘12的顶面上方。在一些实施例中，焊盘保护层16是金属、金属合金、金属层或金属合金等或它们的组合。作为示例，金属包括锡、镍、钯、金等或它们的组合。例如，可以通过浸镀、电镀、化学镀等或它们的组合来形成焊盘保护层16。在一个实施例中，焊盘保护层16是通过锡镀形成的锡。在另一个实施例中，焊盘保护层16通过化学镀镍/钯浸金(ENEPIG)形成。在其他实施例中，每个焊盘保护层16都是自组装单层(self-assembled monolayer)，并且可以包括具有4到30个碳原子和一个官能团(例如，由浸泡、旋涂、印刷等或它们的组合所形成的硫醇基或醇基)的烷烃。 
在图4中，螺柱球(stud bulb)18形成在各自的焊盘保护层16上。例如，通过熔化线的末端在每条线的末端形成一个球体来形成螺柱球18。然后，将球体放置在焊盘保护层16上，并且使用机械力、热和/或超声波能量将球体接合到焊盘保护层16。然后，线在球体(或者之前是球体，因为机械力、热和/或超声波能量可能已经将其形状改变)上方断开。本步骤中使用的线可以是铜、金、铝、银、合金等或它们的组合。线还可以具有金属掺杂成分(doping elements)。另外，线可以是涂有第二金属的第一金属， 例如，涂有钯的铜线。线的直径可以在大约0.3密尔到大约5密耳之间，例如，大约1.5密耳。因此，螺柱球18可以包括与线相同的材料。 
在图5中，泡保护涂层20形成在对应的螺柱球18上。在一些实施例中，泡保护涂层20是金属、金属合金、金属层或金属合金层等或它们的组合。作为示例，金属包括锡、镍、钯、金、银等或它们的组合。例如，可以通过浸镀、电镀、化学镀等或它们的组合来形成泡保护涂层20。在一个实施例中，泡保护涂层20通过锡镀形成的锡。在另一个实施例中，泡保护涂层20是ENEPIG。在其它实施例中，每个泡保护涂层20都是自组装单层，例如，具有4到30个碳原子和一个官能团(例如，由浸泡、旋涂、印刷等或其组合形成的硫醇基或醇基)的烷烃。在另一些实施例中，每个泡保护涂层20都是由可接受技术形成的OSP。泡保护涂层20可以在螺柱球18上提供层以防止螺柱球18氧化，例如，当螺柱球18是铜时，防止形成铜氧化物。 
在图6中，提供第二衬底22，例如顶部衬底。第二衬底22可以具有之前所讨论的第一衬底10的任何的部件和/或元件。第二衬底22具有位于第二衬底22的底面上的焊盘24。在一个实施例中，焊盘24形成为通过钝化层直接连接到各自的金属化层中的图案。在另一个实施例中，每个焊盘24都是金属化层中的图案。在另一些实施例中，焊盘24可以是通孔的对应暴露部分和/或可以形成在通孔的对应部分上。在一个实施例中，焊盘24是金属、合金或金属层和/或金属合金。在本实施例中，焊盘24是铜，在其他实施例中，焊盘24可以包括铜、金、铝、铝铜(Al(Cu))等或它们的组合。焊盘24向第二衬底22内和/或连接至第二衬底22的各种器件和/或元件提供外部的电连接。在焊盘24上提供焊料26。焊料26可以通过任何可接受的方法以任何焊接材料(例如，无铅焊料等)形成。 
在图7中，第二衬底22上的焊料26与第一衬底10上的螺柱球18相接触，并且回流形成回流焊料连接件28。回流焊料连接件28在第一衬底10上的螺柱球18和第二衬底22上的焊盘24之间提供机械和电连接。在图8中，将成型化合物30分配到第一衬底10和第二衬底22之间的空间中，并且围绕衬底10和22之间的连接。成型化合物30可以是可接受的材料， 例如，环氧树脂等。在其他实施例中，成型化合物30可以被底部填充材料、非导电膏(NCP)、非导电薄膜(NCF)或其他介质膜代替。 
值得注意的是，诸如图8所示结构的实施例可以预期图中没有明确示出的各种附加部件。例如，每个衬底10和22都可以在额外的表面上具有额外的电连接件。第一衬底10的底面和第二衬底22的顶面可以具有螺柱球、微凸块、小型凸块、柱、列、BGA焊球、可控塌陷芯片连接(C4)凸块等或它们的组合。此外，管芯可以位于衬底10和22的各个表面上。例如，可以通过电连接件将管芯附接至每个衬底10和22的底面和/或顶面。在任何表面上可以有任意数量的管芯。实施例的其他部件对于本领域的技术人员来说是显而易见的。 
图9至图14根据一个实施例示出了形成PoP结构的第二种方法。根据这个实施例，根据图1和2所讨论的步骤对第一衬底10和焊盘12进行处理。在图9中，对焊盘12的顶面进行处理，以形成处理表面32。该处理可以是用于强化之后形成的螺柱球与焊盘12的接合的工艺。在一个实施例中，该处理包括使用氨(NH3)、氩气(Ar)、氧气(O2)、臭氧(O3)、氢气(H2)、氮气(N2)或甲烷(CH4)等离子体。在另一个实施例中，该处理包括对焊盘12掺杂锗(Ge)。本领域的普通技术人员很容易理解，也可以使用其他等离子体处理或掺杂。 
在图10中，螺柱球18以与先前图4中所讨论的相同或类似的方法形成在处理表面32上。在图11中，泡保护涂层20以与先前图5中所讨论的相同或类似的方法形成在各自的螺柱球18上。图12至14示出的是提供第二衬底22、通过回流将第一衬底10连接到第二衬底22以及以与先前图6-8中所讨论的相同或类似的方法在衬底10和22之间提供成型化合物30。与先前的实施例相同，图14所示的结构可以具有未明确示出的部件。 
图15至图19根据一个实施例示出了形成PoP结构的第三种方法。根据这个实施例，第一衬底10和焊盘12以与先前图1和图2中所讨论的相同或类似的方法处理。在图15中，螺柱球18以与先前图4中所讨论的相同或类似的方法直接形成在焊盘12上。在本实施例中，螺柱球18可以通过直接金属-金属接合而结合到焊盘12。螺柱球18可以具有与焊盘12相同 的材料，例如，铜、铝、铝铜(Al(Cu))等或它们的组合。在另一实施例中，螺柱球18可以包括与焊盘12不同的材料，例如，螺柱球18可以包括铜，而焊盘12包括铝或铝铜。图16至图19示出的是泡保护涂层20形成在各自的螺柱球18上、提供第二衬底22、通过回流将第一衬底10连接到第二衬底22以及以与先前图5中所讨论的相同或类似的方法在衬底10和22之间提供成型化合物30。与先前的实施例相同，图19所示的结构可以具有未明确示出的部件。 
图20至图24根据实施例示出了螺柱球的各种部件。在上述实施例中，可以将这些部件任意合并或使用。图20示出了单螺柱球40，例如在上图中示出的螺柱球18。例如，通过熔化线的末端以在末端形成一个球体，从而形成单螺柱球40。然后，将球体放置在接合表面上，并且应用机械力、热和/或超声波能量将球体接合到接合表面。然后，线在球体(或之前是球体，因为力、热和/或超声波能量可能已经将其形状改变)的上面断开。单螺柱球40的直径D在大约0.3密尔到大约5密尔之间，例如，大约1.5密耳，以及单螺柱球40的高度H在大约20微米到大约200微米之间，例如，大约150微米。 
图21示出了具有拉长尾部44的单螺柱球42。例如，可以使用与图20中示出的单螺柱球40类似的方法形成具有拉长尾部44的单螺柱球42，除了线在离单螺柱球42一定距离处断开以保留拉长尾部44。在其他实施例中，可以修改其它工艺参数以形成拉长尾部44。拉长尾部44的高度H1在大约10微米到大约200微米之间，例如，大约100微米，以及单螺柱球42的高度H2在大约5微米到大约80微米之间，例如，大约50微米。 
图22和图23都示出了堆叠的单螺柱球。在图22中，可以使用与图20中的单螺柱球40相同或类似的方法按顺序形成单螺柱球46和48。在这个实施例中，单螺柱球46和48的材料相同。例如，单螺柱球46和48都是铜。在图23中，可以使用与图20中的单螺柱球40相同或类似的方法按顺序形成单螺柱球50和52。在本实施例中，单螺柱球50和52的材料不同。例如，单螺柱球50是金，而单螺柱球52是铜。虽然在22和23中只示出了两个单螺柱球，但是在其他同等实施例中，可以堆叠更多的单螺柱 球和/或堆叠包括各种材料组合的单螺柱球。 
图24示出了堆叠的单螺柱球，其中一个单螺柱球具有拉长尾部。具有拉长尾部58的单螺柱球56在单螺柱球54上堆叠形成。例如，可以使用与图20中的单螺柱球相同或类似的方法形成单螺柱球54，以及例如，可以使用与图21中的具有拉长尾部44的单螺柱球42相同或类似的方法形成具有拉长尾部58的单螺柱球56。螺柱球54和56和拉长尾部58可以包括相同或不同的材料(例如，对图22和23所做的讨论)，以及另外，可以堆叠额外的单螺柱球。 
图25至图28示出了实施例的各个方面。作为示例，图25和26示出了焊盘12、焊盘保护层16、螺柱球18、泡保护涂层20、回流焊料连接件28和焊盘24，诸如如图8所示的。图25示出了单螺柱球18a作为螺柱球18，图26示出了具有更大的高度和/或拉长尾部的单螺柱球18b作为螺柱球18。例如，在图25和26中，焊盘保护层16是ENEPIG结构。回流焊料连接件28涂满焊盘保护层16的顶面，从而使螺柱球18以外的焊盘保护层16的整个顶面与回流焊料连接件28相接触。应当指出的是，整个顶面应理解为大致包括整个顶面，例如，根据本发明此处所述的适当的步骤可能导致的结果，本领域的技术人员应当理解该术语。 
虽然没有明确示出，但是与图25和图26所示相类似的，当各自的表面用作螺柱球18的接合表面时，可以将回流焊料连接件28涂满处理表面32(图14)和/或焊盘12(图19)的顶面。在其他实施例中，可以不将回流焊料连接件28涂满处理表面32和/或焊盘12的顶面。 
作为示例，图27和28示出了焊盘12、焊盘保护层16、螺柱球18、泡保护涂层20、回流焊料连接件28和焊盘24，诸如如图8所示的。图27示出了单螺柱球18a作为螺柱球18，图28示出了具有更大的高度和/或拉长尾部的单螺柱球18b作为螺柱球18。例如，在图27和28中，焊盘保护层16是浸锡、自组装单层膜或OSP结构。回流焊料连接件28不涂满焊盘保护层16的顶面，并且焊盘保护层16的部分70(例如，沿外围的部分)不接触回流焊料连接件28，而是被暴露出来。 
图29示出了局部接合。例如，当回流时焊料26的量不足以完全形成 在螺柱球18的上面时，形成局部接合。图29示出了具有大的高度和/或拉长尾部接合到接合表面72。泡保护涂层20在螺柱球18b上。回流焊料连接件28环绕螺柱球18b回流，并且连接到接合表面74。例如，接合表面72可以是焊盘保护层16、处理表面32或焊盘12，接合表面74可以是焊盘24。回流焊料连接件28不完全覆盖螺柱球18b，并且一部分泡保护涂层20暴露出来。应当指出的是，可以使用各种配置的螺柱球，例如，单螺柱球、堆叠的单螺柱球、具有大的高度的单螺柱球、具有拉长尾部的单螺柱球等或其组合。 
图30至图33根据实施例示出了螺柱球的各种修改。图30描述了图25所示的结构，例如，除此之外还包括金属间化合物(IMC) 80。IMC 80可以形成在回流过程中与回流焊料相接触的部分焊盘保护层16上。IMC 80可以由包括在回流过程中与焊盘保护层16反应的焊料26中的材料形成。IMC 80可以是铜锡(例如，Cu3Sn或Cu6Sn5)、镍锡(例如，Ni3Sn4)等或它们的组合。 
图31描述了图27所示的结构，例如，除此之外还包括IMC 82，但不包括泡保护涂层20。IMC 82可以形成在回流过程中与回流焊料相接触的部分螺柱球18a上。IMC 82可以由包括在回流过程中与螺柱球18a反应的焊料26中的材料形成。IMC 82可以是铜锡(例如，Cu3Sn或Cu6Sn5)等。 
在如图31所示的实施例中，在回流焊料26之前，泡保护涂层20可以形成或不形成在螺柱球18a上。如果不形成泡保护涂层20，正如所讨论的，IMC 82直接形成在螺柱球18a上。如果在一些实施例中形成泡保护涂层20，泡保护涂层20可以在回流过程中溶解，并且IMC 82直接形成在螺柱球18a上。另外，虽然没有明确的描述，但实施例可以预期螺柱球18a具有位于螺柱球18a的外表面上的泡保护涂层20，以及IMC 82形成在泡保护涂层20的外表面上。在这种情况下，IMC 82可以与图31所讨论的相类似地形成。 
图32描述了图30所示的结构，例如，除此之外还包括IMC 82但不包括泡保护涂层20。IMC 82形成在回流过程中与回流焊料相接触的部分螺柱球18a上。IMC 82可以是铜锡(例如，Cu3Sn或Cu6Sn5)等。 
如图32所示的实施例中，在回流焊料26之前，泡保护涂层20可以形成或不形成在螺柱球18a上。如果不形成泡保护涂层20，正如所讨论的，IMC 82直接形成在螺柱球18a上。如果在一些实施例中形成泡保护涂层20，泡保护涂层20可以在回流过程中溶解，并且IMC 82直接形成在螺柱球18a上。另外，虽然没有明确的描述，但实施例可以预期螺柱球18a具有位于螺柱球18a的外表面上的泡保护涂层20，以及IMC 82形成在泡保护涂层20的外表面上。在这种情况下，IMC 82可以与图32所讨论的相类似地形成。 
图33描述了图29所示的结构，例如，除此之外还包括IMC 84但不包括泡保护涂层20。IMC 84形成在回流过程中回流焊料相接触的部分螺柱球18b上。由于具有前面所讨论的局部接合，一部分螺柱球18b未被IMC 84或回流焊料连接件28覆盖。IMC 84可以由包括在回流过程中与螺柱球18b反应的焊料26中的材料形成。IMC 84可以是铜锡(例如，Cu3Sn或Cu6Sn5)等。 
如图33所示的实施例中，在回流焊料26之前，泡保护涂层20可以形成或不形成在螺柱球18b上。如果不形成泡保护涂层20，正如所讨论的，IMC 84直接形成在螺柱球18b上。如果在一些实施例中形成泡保护涂层20，泡保护涂层20可以在回流过程中溶解，并且IMC 84直接形成在螺柱球18b上。另外，虽然没有明确的描述，但实施例可以预期螺柱球18b具有位于螺柱球18ba的外表面上的泡保护涂层20，以及IMC 84形成在泡保护涂层20的外表面上。在这种情况下，IMC 84可以与图33所讨论的相类似地形成 
图34和35分别示出了封装结构的元件的布局图和截面图。该结构包括衬底90(例如上述实施例中的第一衬底10)、衬底90的顶面上的螺柱球92以及附接在衬底90的顶面上的管芯94。如图35所示，电连接件96将管芯94连接至衬底90。电连接件96可以是例如微凸块、小型凸块、C4凸块等。图34和图35也示出了螺柱球92之间的间距P。例如，间距小于100微米，或者在大约50微米到大约90微米之间，例如，大约80微米。应当指出的是，该结构可以是PoP结构中的底部衬底，例如，底面上的BGA 球。另外，结构顶面上方可以具有额外的封装结构以形成PoP结构，诸如图1至图19中的实施例所示。 
作为示例，图36根据一个实施例示出了实例PoP结构。图36中的结构包括图34和35所讨论的元件。该结构进一步包括电连接件98，例如，位于衬底90的底面上的BGA球。另外，第二衬底102通过回流焊料连接件100连接到衬底90，回流焊料连接件100连接到第二衬底的底面。如先前实施例所讨论的，回流焊料连接件100围绕螺柱球92回流。第二管芯104通过电连接件106连接到第二衬底102的顶面，电连接件106可以与电连接件96相同或类似。可以将先前所讨论的螺柱球的部件和其他元件并入图36的结构中。另外，衬底上可以具有额外的管芯，例如在衬底90和102的底面上和/或在衬底90和102的顶面上。进一步地，在第二衬底102的顶面上可以具有额外的封装结构，它可以使用或不使用螺柱球或其他此处所讨论的部件。 
图37至图40结合前面讨论的部件示出了各种封装结构，它也可用于图36所示的PoP结构中。图37至图40包括图34和35所示的结构，因此，不再对于图37至40所示的元件的进行明确的讨论。在图37中，封装包括螺柱球110，其具有延伸至管芯94的顶面上方的高度。螺柱球110的高度例如在大约20微米到大约80微米之间，例如大约50微米，以及直径例如在大约10微米到大约80微米之间，例如大约30微米。 
在图38中，封装结构包括堆叠的螺柱球112，每个螺柱球112包括两个单螺柱球。堆叠的螺柱球112具有延伸至管芯94的顶面上方的高度。堆叠的螺柱球112的高度例如在大约30微米到大约200微米之间，例如，大约150微米，以及直径例如在大约20微米到大约150微米之间，例如，大约80微米。 
在图39中，封装结构包括具有拉长尾部的螺柱球114。具有拉长尾部的螺柱球114的高度延伸至管芯94的顶面上方。具有拉长尾部的螺柱球114的高度例如在大约30微米到大约200微米之间，例如，大约150微米，以及直径例如在大约20微米到大约150微米之间，例如，大约80微米。 
在图40中，封装包括螺柱球116，其具有延伸至管芯94的顶面下方 的高度。螺柱球116的高度例如在大约10微米到大约50微米之间，例如，大约30微米，以及直径例如在大约5微米到大约50微米之间，例如，大约30微米。例如，在一个实施例中，用于形成螺柱球116的工艺包括通过激光打孔降低螺柱球的高度和/或直径。 
通过将螺柱球置于PoP结构中，可以降低连接件之间的用于封装互连的间距，例如，小于100微米，因此，可以增加连接件的密度。另外，在一些实施例中，可以通过选择配线和/或控制工艺参数来控制螺柱球的高度和间距。产生螺柱球的工艺是灵活的，并且可以适用于各种封装尺寸。此外，实施例可以使用各种与传统工艺相兼容的材料。 
第一个实施例是一种结构。该结构包括第一衬底、螺柱球、管芯、第二衬底和电连接件。螺柱球与第一衬底的第一表面相接合。管芯与第一衬底的第一表面相连接。电连接件与第二衬底相结合，以及各自的电连接件与各自的螺柱球相接合。 
另一个实施例是一种结构。该结构包括第一衬底、第二衬底、螺柱球和接合连接件。第一衬底包括在第一衬底的第一表面上的第一焊盘，以及与第一衬底的第一表面相连接的管芯。第二衬底包括第二衬底的第一表面上的第二焊盘。螺柱球在第一焊盘上，以及接合连接件将螺柱球与第二焊盘相接合。 
另一个实施例是一种方法。该方法包括提供一衬底、在第一衬底的第一表面上的第一焊盘，与第一衬底的第一表面相连接的管芯；在第一焊盘上形成螺柱球；提供第二衬底、在第二衬底的第一表面上的第二焊盘；以及将接合连接件结合到螺柱球和第二焊盘。 
又一个实施例是一种结构。该结构包括在第一衬底的第一表面上的第一接合焊盘、与第一衬底的第一表面相连接的管芯、在第二衬底的第二表面上的第二接合焊盘、在第一接合焊盘上的螺柱球，以及将螺柱球接卸接合到第二接合焊盘的焊料。第一表面与第二表面相反，并且管芯设置在第一表面和第二表面之间。 
尽管已经详细地描述了本发明及其优势，但应该理解，可以在不背离所附权利要求限定的本发明主旨和范围的情况下，做各种不同的改变，替 换和更改。而且，本申请的范围并不仅限于本说明书中描述的工艺、机器、制造、材料组分、装置、方法和步骤的特定实施例。作为本领域普通技术人员应理解，通过本发明，现有的或今后开发的用于执行与根据本发明所采用的所述相应实施例基本相同的功能或获得基本相同结果的工艺、机器、制造，材料组分、装置、方法或步骤根据本发明可以被使用。因此，所附权利要求应该包括在这样的工艺、机器、制造、材料组分、装置、方法或步骤的范围内。 

Claims (10)

1.一种结构，包括：
第一衬底；
螺柱球，连接至所述第一衬底的第一表面；
管芯，连接至所述第一衬底的第一表面；
第二衬底；以及
电连接件，连接至所述第二衬底，所述电连接件中的相应电连接件与所述螺柱球中的相应螺柱球相连接。
2.根据权利要求1所述的结构，其中，所述第一衬底包括焊盘，焊盘保护层中的相应焊盘保护层位于所述焊盘中的相应焊盘上方，所述螺柱球中的相应螺柱球接合至所述焊盘保护层中的相应焊盘保护层。
3.根据权利要求1所述的结构，进一步包括：位于所述螺柱球中的相应螺柱球的表面上的保护涂层中的相应保护涂层，所述保护涂层中的相应保护涂层位于所述螺柱球中的相应螺柱球和所述电连接件中的相应电连接件之间。
4.根据权利要求1所述的结构，其中，所述第一衬底包括焊盘，所述焊盘中的相应焊盘包括处理表面中的相应处理表面、所述螺柱球中的相应螺柱球接合至所述处理表面中的相应处理表面。
5.根据权利要求1所述的结构，其中，所述第一衬底包括焊盘，所述螺柱球中的相应螺柱球直接接合至所述焊盘中的相应焊盘。
6.根据权利要求1所述的结构，其中，每个所述螺柱球均包括(i)单螺柱球、(ii)具有拉长尾部的单螺柱球、(iii)堆叠的至少两个单螺柱球、(iv)堆叠在第二单螺柱球上的具有拉长尾部的第一单螺柱球或者(V)它们的组合。
7.根据权利要求1所述的结构，其中，所述单螺柱球中的相应单螺柱球和所述电连接件中的相应电连接件形成局部接合。
8.根据权利要求1所述的结构，进一步包括：金属间化合物，界面连接在所述螺柱球中的相应螺柱球和所述电连接件中的相应电连接件之间的。
9.一种结构，包括：
第一衬底，包括位于所述第一衬底的第一表面上的第一焊盘、附接至所述第一衬底的所述第一表面的管芯；
第二衬底，包括位于所述第二衬底的第一表面上的第二焊盘；
螺柱球，位于所述第一焊盘上；以及
焊料连接件，将所述螺柱球连接至所述第二焊盘。
10.一种结构，包括：
第一接合焊盘，位于第一衬底的第一表面上；
管芯，附接至所述第一衬底的所述第一表面；
第二接合焊盘，位于第二衬底的第二表面上，所述第一表面与所述第二表面相对，所述管芯设置在所述第一表面和所述第二表面之间；
螺柱球，位于所述第一接合焊盘上；以及
焊料，将所述螺柱球机械地连接至所述第二接合焊盘。
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Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101053079A (zh) 2004-11-03 2007-10-10 德塞拉股份有限公司 堆叠式封装的改进
US8058101B2 (en) 2005-12-23 2011-11-15 Tessera, Inc. Microelectronic packages and methods therefor
US8482111B2 (en) 2010-07-19 2013-07-09 Tessera, Inc. Stackable molded microelectronic packages
US9159708B2 (en) 2010-07-19 2015-10-13 Tessera, Inc. Stackable molded microelectronic packages with area array unit connectors
US20120146206A1 (en) 2010-12-13 2012-06-14 Tessera Research Llc Pin attachment
KR101128063B1 (ko) 2011-05-03 2012-04-23 테세라, 인코포레이티드 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리
US8618659B2 (en) 2011-05-03 2013-12-31 Tessera, Inc. Package-on-package assembly with wire bonds to encapsulation surface
US8836136B2 (en) 2011-10-17 2014-09-16 Invensas Corporation Package-on-package assembly with wire bond vias
US8912651B2 (en) * 2011-11-30 2014-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. Package-on-package (PoP) structure including stud bulbs and method
US8946757B2 (en) 2012-02-17 2015-02-03 Invensas Corporation Heat spreading substrate with embedded interconnects
US8372741B1 (en) 2012-02-24 2013-02-12 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface
US9768137B2 (en) * 2012-04-30 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Stud bump structure for semiconductor package assemblies
US8835228B2 (en) 2012-05-22 2014-09-16 Invensas Corporation Substrate-less stackable package with wire-bond interconnect
US9391008B2 (en) 2012-07-31 2016-07-12 Invensas Corporation Reconstituted wafer-level package DRAM
US9502390B2 (en) 2012-08-03 2016-11-22 Invensas Corporation BVA interposer
CN102773749A (zh) * 2012-08-28 2012-11-14 昆山北钜机械有限公司 链式刀库
US8878353B2 (en) 2012-12-20 2014-11-04 Invensas Corporation Structure for microelectronic packaging with bond elements to encapsulation surface
US10128175B2 (en) * 2013-01-29 2018-11-13 Taiwan Semiconductor Manufacturing Company Packaging methods and packaged semiconductor devices
US9136254B2 (en) 2013-02-01 2015-09-15 Invensas Corporation Microelectronic package having wire bond vias and stiffening layer
US9167710B2 (en) 2013-08-07 2015-10-20 Invensas Corporation Embedded packaging with preformed vias
US9685365B2 (en) 2013-08-08 2017-06-20 Invensas Corporation Method of forming a wire bond having a free end
US9633869B2 (en) * 2013-08-16 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Packages with interposers and methods for forming the same
US20150076714A1 (en) 2013-09-16 2015-03-19 Invensas Corporation Microelectronic element with bond elements to encapsulation surface
US9379074B2 (en) 2013-11-22 2016-06-28 Invensas Corporation Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects
US9263394B2 (en) 2013-11-22 2016-02-16 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9583456B2 (en) 2013-11-22 2017-02-28 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9583411B2 (en) 2014-01-17 2017-02-28 Invensas Corporation Fine pitch BVA using reconstituted wafer with area array accessible for testing
KR20150091932A (ko) * 2014-02-04 2015-08-12 앰코 테크놀로지 코리아 주식회사 반도체 디바이스의 제조 방법 및 이에 따른 반도체 디바이스
US10381326B2 (en) 2014-05-28 2019-08-13 Invensas Corporation Structure and method for integrated circuits packaging with increased density
US9646917B2 (en) 2014-05-29 2017-05-09 Invensas Corporation Low CTE component with wire bond interconnects
US9412714B2 (en) 2014-05-30 2016-08-09 Invensas Corporation Wire bond support structure and microelectronic package including wire bonds therefrom
CN104157617B (zh) 2014-07-29 2017-11-17 华为技术有限公司 芯片集成模块、芯片封装结构及芯片集成方法
WO2016064350A1 (en) * 2014-10-23 2016-04-28 Agency For Science, Technology And Research Method of bonding a first substrate and a second substrate
US11018099B2 (en) * 2014-11-26 2021-05-25 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure having a conductive bump with a plurality of bump segments
US9735084B2 (en) 2014-12-11 2017-08-15 Invensas Corporation Bond via array for thermal conductivity
US9859200B2 (en) * 2014-12-29 2018-01-02 STATS ChipPAC Pte. Ltd. Integrated circuit packaging system with interposer support structure mechanism and method of manufacture thereof
US9888579B2 (en) 2015-03-05 2018-02-06 Invensas Corporation Pressing of wire bond wire tips to provide bent-over tips
US9502372B1 (en) 2015-04-30 2016-11-22 Invensas Corporation Wafer-level packaging using wire bond wires in place of a redistribution layer
US9761554B2 (en) 2015-05-07 2017-09-12 Invensas Corporation Ball bonding metal wire bond wires to metal pads
US20160343646A1 (en) * 2015-05-21 2016-11-24 Qualcomm Incorporated High aspect ratio interconnect for wafer level package (wlp) and integrated circuit (ic) package
KR102367404B1 (ko) 2015-08-03 2022-02-25 삼성전자주식회사 반도체 패키지의 제조 방법
WO2017034591A1 (en) * 2015-08-27 2017-03-02 Intel IP Corporation Robust intermetallic compound layer interface for package in package embedding
FR3041625B1 (fr) * 2015-09-29 2021-07-30 Tronics Microsystems Dispositif de fixation de deux elements tels qu'une puce, un interposeur et un support
US10490528B2 (en) 2015-10-12 2019-11-26 Invensas Corporation Embedded wire bond wires
US9490222B1 (en) 2015-10-12 2016-11-08 Invensas Corporation Wire bond wires for interference shielding
US10332854B2 (en) 2015-10-23 2019-06-25 Invensas Corporation Anchoring structure of fine pitch bva
US10181457B2 (en) 2015-10-26 2019-01-15 Invensas Corporation Microelectronic package for wafer-level chip scale packaging with fan-out
US9911718B2 (en) 2015-11-17 2018-03-06 Invensas Corporation ‘RDL-First’ packaged microelectronic device for a package-on-package device
US9659848B1 (en) 2015-11-18 2017-05-23 Invensas Corporation Stiffened wires for offset BVA
US11037904B2 (en) * 2015-11-24 2021-06-15 Taiwan Semiconductor Manufacturing Company, Ltd. Singulation and bonding methods and structures formed thereby
WO2017095094A2 (ko) * 2015-11-30 2017-06-08 하나마이크론(주) 메탈 코어 솔더 볼 인터커넥터 팬-아웃 웨이퍼 레벨 패키지 및 그 제조 방법
US9984992B2 (en) 2015-12-30 2018-05-29 Invensas Corporation Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces
US9935075B2 (en) 2016-07-29 2018-04-03 Invensas Corporation Wire bonding method and apparatus for electromagnetic interference shielding
US10299368B2 (en) 2016-12-21 2019-05-21 Invensas Corporation Surface integrated waveguides and circuit structures therefor
US20180315725A1 (en) * 2017-04-26 2018-11-01 Nanya Technology Corporation Package structure having bump with protective anti-oxidation coating
US11139260B2 (en) * 2019-09-17 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Plurality of stacked pillar portions on a semiconductor structure
KR20220150481A (ko) * 2021-05-03 2022-11-11 삼성전자주식회사 지지 솔더볼을 포함하는 반도체 패키지
US20230136631A1 (en) * 2021-11-04 2023-05-04 Airoha Technology Corp. Semiconductor package using hybrid-type adhesive
DE102021130307A1 (de) * 2021-11-19 2023-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip und verfahren zum verbinden eines halbleiterchips mit einem anschlussträger

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5889326A (en) * 1996-02-27 1999-03-30 Nec Corporation Structure for bonding semiconductor device to substrate
CN1873939A (zh) * 2002-02-07 2006-12-06 日本电气株式会社 半导体器件的制造方法
JP2007165443A (ja) * 2005-12-12 2007-06-28 Toshiba Corp 半導体装置およびその製造方法
US20100171205A1 (en) * 2009-01-07 2010-07-08 Kuang-Hsiung Chen Stackable Semiconductor Device Packages
CN103094260A (zh) * 2011-10-31 2013-05-08 台湾积体电路制造股份有限公司 层叠封装器件及封装半导体管芯的方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030001286A1 (en) * 2000-01-28 2003-01-02 Ryoichi Kajiwara Semiconductor package and flip chip bonding method therein
JP2002151551A (ja) * 2000-11-10 2002-05-24 Hitachi Ltd フリップチップ実装構造、その実装構造を有する半導体装置及び実装方法
TW508987B (en) * 2001-07-27 2002-11-01 Phoenix Prec Technology Corp Method of forming electroplated solder on organic printed circuit board
US6853076B2 (en) * 2001-09-21 2005-02-08 Intel Corporation Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same
US20040084206A1 (en) * 2002-11-06 2004-05-06 I-Chung Tung Fine pad pitch organic circuit board for flip chip joints and board to board solder joints and method
US7372151B1 (en) * 2003-09-12 2008-05-13 Asat Ltd. Ball grid array package and process for manufacturing same
US20060055032A1 (en) * 2004-09-14 2006-03-16 Kuo-Chin Chang Packaging with metal studs formed on solder pads
JP2006156544A (ja) * 2004-11-26 2006-06-15 Denso Corp 基板の実装構造およびその実装方法
WO2006126361A1 (ja) * 2005-05-24 2006-11-30 Matsushita Electric Industrial Co., Ltd. ハンダバンプ形成方法および半導体素子の実装方法
US7521284B2 (en) * 2007-03-05 2009-04-21 Texas Instruments Incorporated System and method for increased stand-off height in stud bumping process
US8409920B2 (en) * 2007-04-23 2013-04-02 Stats Chippac Ltd. Integrated circuit package system for package stacking and method of manufacture therefor
US20090014852A1 (en) * 2007-07-11 2009-01-15 Hsin-Hui Lee Flip-Chip Packaging with Stud Bumps
US20090057866A1 (en) * 2007-08-27 2009-03-05 Chow Linda L W Microelectronic Package Having Second Level Interconnects Including Stud Bumps and Method of Forming Same
JP2009099597A (ja) * 2007-10-12 2009-05-07 Nec Electronics Corp 半導体装置およびその製造方法
TW200924087A (en) * 2007-11-19 2009-06-01 Advanced Semiconductor Eng Chip structure, substrate structure, chip package structure and process thereof
JP2009238969A (ja) * 2008-03-27 2009-10-15 Panasonic Corp 電子部品の実装構造および電子部品実装体の製造方法
US8198131B2 (en) * 2009-11-18 2012-06-12 Advanced Semiconductor Engineering, Inc. Stackable semiconductor device packages
US9105647B2 (en) 2010-05-17 2015-08-11 Stats Chippac, Ltd. Method of forming perforated opening in bottom substrate of flipchip pop assembly to reduce bleeding of underfill material
EP2405468A1 (en) * 2010-07-05 2012-01-11 ATOTECH Deutschland GmbH Method to form solder deposits on substrates
US8525318B1 (en) * 2010-11-10 2013-09-03 Amkor Technology, Inc. Semiconductor device and fabricating method thereof
US8466544B2 (en) * 2011-02-25 2013-06-18 Stats Chippac, Ltd. Semiconductor device and method of forming interposer and opposing build-up interconnect structure with connecting conductive TMV for electrical interconnect of Fo-WLCSP
TWM418400U (en) * 2011-07-04 2011-12-11 Azurewave Technologies Inc Upright Stacked Light-emitting 2 LED structure
US8476770B2 (en) * 2011-07-07 2013-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and methods for forming through vias
US9553162B2 (en) * 2011-09-15 2017-01-24 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming semiconductor die with active region responsive to external stimulus
US8809117B2 (en) * 2011-10-11 2014-08-19 Taiwain Semiconductor Manufacturing Company, Ltd. Packaging process tools and packaging methods for semiconductor devices
US8836136B2 (en) * 2011-10-17 2014-09-16 Invensas Corporation Package-on-package assembly with wire bond vias
US9030022B2 (en) * 2011-10-24 2015-05-12 Taiwan Semiconductor Manufacturing Company, Ltd. Packages and methods for forming the same
US8912651B2 (en) * 2011-11-30 2014-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. Package-on-package (PoP) structure including stud bulbs and method
US8823180B2 (en) * 2011-12-28 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package devices and methods of packaging semiconductor dies
US20130234317A1 (en) * 2012-03-09 2013-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Packaging Methods and Packaged Semiconductor Devices
US9082780B2 (en) * 2012-03-23 2015-07-14 Stats Chippac, Ltd. Semiconductor device and method of forming a robust fan-out package including vertical interconnects and mechanical support layer
US8922005B2 (en) * 2012-04-11 2014-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for package on package devices with reversed stud bump through via interconnections
US9171790B2 (en) * 2012-05-30 2015-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package devices and methods of packaging semiconductor dies
US8703539B2 (en) * 2012-06-29 2014-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple die packaging interposer structure and method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5889326A (en) * 1996-02-27 1999-03-30 Nec Corporation Structure for bonding semiconductor device to substrate
CN1873939A (zh) * 2002-02-07 2006-12-06 日本电气株式会社 半导体器件的制造方法
JP2007165443A (ja) * 2005-12-12 2007-06-28 Toshiba Corp 半導体装置およびその製造方法
US20100171205A1 (en) * 2009-01-07 2010-07-08 Kuang-Hsiung Chen Stackable Semiconductor Device Packages
CN103094260A (zh) * 2011-10-31 2013-05-08 台湾积体电路制造股份有限公司 层叠封装器件及封装半导体管芯的方法

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