TW201322389A - 封裝結構 - Google Patents

封裝結構 Download PDF

Info

Publication number
TW201322389A
TW201322389A TW101122590A TW101122590A TW201322389A TW 201322389 A TW201322389 A TW 201322389A TW 101122590 A TW101122590 A TW 101122590A TW 101122590 A TW101122590 A TW 101122590A TW 201322389 A TW201322389 A TW 201322389A
Authority
TW
Taiwan
Prior art keywords
stud
substrate
spherical
bulb
package structure
Prior art date
Application number
TW101122590A
Other languages
English (en)
Other versions
TWI483357B (zh
Inventor
Chen-Hua Yu
Mirng-Ji Lii
Chung-Shi Liu
Ming-Da Cheng
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of TW201322389A publication Critical patent/TW201322389A/zh
Application granted granted Critical
Publication of TWI483357B publication Critical patent/TWI483357B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/038—Post-treatment of the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05023—Disposition the whole internal layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05155—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05563—Only on parts of the surface of the internal layer
    • H01L2224/05564—Only on the bonding interface of the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/05611—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05664—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/05693—Material with a principal constituent of the material being a solid not provided for in groups H01L2224/056 - H01L2224/05691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/11011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/11019—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for protecting parts during the process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/1182—Applying permanent coating, e.g. in-situ coating
    • H01L2224/11823—Immersion coating, e.g. in a solder bath
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/1182—Applying permanent coating, e.g. in-situ coating
    • H01L2224/11825—Plating, e.g. electroplating, electroless plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/1183—Reworking, e.g. shaping
    • H01L2224/1184—Reworking, e.g. shaping involving a mechanical process, e.g. planarising the bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13016—Shape in side view
    • H01L2224/13017—Shape in side view being non uniform along the bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13016—Shape in side view
    • H01L2224/13018—Shape in side view comprising protrusions or indentations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13016—Shape in side view
    • H01L2224/13018—Shape in side view comprising protrusions or indentations
    • H01L2224/13019—Shape in side view comprising protrusions or indentations at the bonding interface of the bump connector, i.e. on the surface of the bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13023—Disposition the whole bump connector protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13075—Plural core members
    • H01L2224/1308—Plural core members being stacked
    • H01L2224/13082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13139—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/1356—Disposition
    • H01L2224/13562—On the entire exposed surface of the core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/1357—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13575—Plural coating layers
    • H01L2224/1358—Plural coating layers being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13611—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13664—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/1605—Shape
    • H01L2224/16057—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/1605—Shape
    • H01L2224/16057—Shape in side view
    • H01L2224/16058—Shape in side view being non uniform along the bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H01L2224/16148—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a bonding area protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/165—Material
    • H01L2224/16501—Material at the bonding interface
    • H01L2224/16503—Material at the bonding interface comprising an intermetallic compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48601—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/48611—Tin (Sn) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48647—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48655—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48663—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/48693—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a solid not provided for in groups H01L2224/486 - H01L2224/4869, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48701—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/48711—Tin (Sn) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48724—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48744—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48747—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48755—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48763—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48764—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/48793—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a solid not provided for in groups H01L2224/487 - H01L2224/4879, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48801—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/48811—Tin (Sn) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48817—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48824—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48844—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48847—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48855—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48863—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48864—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/48893—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a solid not provided for in groups H01L2224/488 - H01L2224/4889, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81009—Pre-treatment of the bump connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81009—Pre-treatment of the bump connector or the bonding area
    • H01L2224/81026—Applying a precursor material to the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/81815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83104—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus by applying pressure, e.g. by injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00012—Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
    • H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Led Device Packages (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

本發明提供一種封裝結構，包括：一第一基板；複數個球狀釘栓(stud bulb)耦合到該第一基板之第一表面；一晶粒黏著至該第一基板之第一表面；一第二基板；以及複數個電性連接結構耦合到該第二基板，每一個電性連接結構分別耦合到對應的球狀釘栓(stud bulb)。

Description

封裝結構
本發明係有關於一種封裝結構，且特別是有關於一種堆疊式封裝層疊(package-on-package,PoP)之封裝結構。
電子元件可被分成簡單的層級，這些層級包括各種元件，這些元件例如積體電路晶片、封裝結構、印刷電路板(printed circuit board,PCB)與系統。封裝結構(package)是介於電子元件(例如電腦晶片)與印刷電路板之間的界面。電子元件由半導體材料，例如矽，所組成。積體電路組合成封裝結構，例如方塊形扁平封裝(quad flat pack,QFP)、針腳柵格陣列(pin grid array,PGA)、球閘陣列封裝(ball grid array,BGA)。組合積體電路的方法包括使用打線接合(wire bonding)、帶狀自動化黏合(tape automated bonding,TAB)、或覆晶接合(flip chip)組裝技術。封裝元件接著被直接接合到印刷電路板(printed wiring board)或接合到另一種類的基板，此另一種基板定義為封裝結構的第二層。
球閘陣列封裝(ball grid array,BGA)技術為進階的半導體封裝技術，其將半導體晶片接合到一基板的前表面，以及複數個導電元件(例如焊料球)排列成陣列，通常稱為球閘陣列，形成於該基板的後表面上。球閘陣列允許半導體封裝結構接合且電性連接到外部的印刷電路板或其他電子元件。球閘陣列(BGA)封裝可應用於記憶體中，例如動態隨機存取記憶體(Dynamic Random Access Memory)或其他記憶體元件。
一個基本的覆晶封裝(flip-chip,FC)技術包括積體電路、內連接系統與基板。功能性晶片連接到具有複數個焊料凸塊的基板，其中焊料凸塊形成介於晶片與基板之間的金屬內連線(metallurgical interconnection)。功能性晶片、焊料凸塊與基板形成一覆晶封裝。此外，複數個焊料球形成球閘陣列(BGA)。
打線接合(wire bonding)技術用於電性連接晶片構件(例如晶片電阻或晶片電容)到基板上。將兩個功能性晶片堆疊到複數基板層之頂表面上。這些晶片藉由複數個接合金線連接到基板上。亦可使用其他導線，例如鋁線。功能性晶片、金線與基板形成打線接合(wire bonding,WB)封裝。
堆疊式封裝層疊(package-on-package,PoP)為一允許積體電路(例如離散邏輯元件(discrete logic)與記憶體球閘陣列封裝(memory ball grid array))垂直結合之堆疊技術。兩個或兩個以上之封裝結構採取一個安裝於另一個之上的方式堆疊，並藉由一標準界面傳遞彼此的訊號。此封裝結構可達到高密度，例如應用於行動電話/PDA市場。
本發明提供一種封裝結構，包括：一第一基板；複數個球狀釘栓(stud bulb)耦合到該第一基板之第一表面；一晶粒黏著至該第一基板之第一表面；一第二基板；以及複數個電性連接結構耦合到該第二基板，每一個電性連接結構分別耦合到對應的球狀釘栓(stud bulb)。
本發明另提供一種封裝結構，包括：一第一基板包括一第一墊片位於該第一基板的一第一表面上，一晶粒附著 於該第一基板的一第一表面；一第二基板包括一第二墊片位於該第二基板的一第一表面上；一球狀釘栓(stud bulb)位於該第一墊片之上；以及一焊料連接結構(solder connector)耦合該球狀釘栓(stud bulb)到該第二墊片。
本發明又提供一種封裝結構，包括：一第一接合墊位於一第一基板的一第一表面上；一晶粒附著到該第一基板的第一表面；一第二接合墊位於一第二基板的一第二表面上，其中該第一表面相對於該第二表面，該晶粒設置於該第一表面與該第二表面之間；一球狀釘栓(stud bulb)位於該第一接合墊之上；以及焊料機械性地耦合該球狀釘栓(stud bulb)到該第二接合墊。
為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下：
下述實施例舉例說明堆疊式封裝層疊結構(package-on-package,PoP)。然而，其他實施例亦可應用於其他封裝或結構，例如三維積體電路(3DIC)。
須注意的是，雖然此處所討論的方法實施例依照特定的順序進行，然而亦可依照其他任何合乎邏輯性的順序進行。再者，各種圖式與示範的實施例中，類似的標號代表類似的元件。
依據本發明之實施例，第1圖至第8圖顯示形成堆疊式封裝層疊結構(package-on-package,PoP)的第一種方法。於第1圖中，提供一第一基板10，例如，底層基板，其中 第一基板10具有墊片12位於其上表面。有機保焊劑(organic solderability preservative,OSP)14形成於每一個墊片12之上表面上。第一基板10可以是，例如有機基板，半導體晶圓，玻璃，矽中介層(silicon interposer)，有機中介層，或類似之材料或上述之組合。第一基板10可包括，例如未切割晶粒(unsingulated)或已切割晶粒及/或中介層。每一個晶粒及/或中介層可包括主動及/或被動元件及/或導通孔(through vias)。第一基板10亦可包括各種材料層，例如介電層、保護層及/或金屬層。
於一實施例中，墊片12可經由保護層，直接連接到位於頂部金屬層之各自圖案。於另一實施例中，墊片12於頂部金屬層各自具有一圖案。於又一實施例中，墊片12可以是各自暴露的導通孔部份及/或形成於各自的導通孔部份之上。於一實施例中，墊片12可以是金屬，金屬合金，或金屬複合層及/或金屬合金複合層。於本實施例中，墊片12是銅，於其他實施例中，墊片12可包括銅、金、鋁、鋁銅合金、鎳、類似之材料或上述之組合。墊片12提供一外部電性連接到各種裝置(device)及元件(component)，這些裝置及元件係形成於第一基板10之中及/或耦合到第一基板10。
於第2圖中，從每個墊片12移除有機保焊劑(organic solderability preservative,OSP)14，以暴露墊片12的上表面。有機保焊劑(organic solderability preservative,OSP)14可藉由任何適合的方式移除，例如塗佈助熔劑(flux)、化學溶液(酸或鹼)，類似之材料或上述之組合於基板上。
於第3圖中，墊片保護層16形成於每一個墊片12之 上。於一些實施例中，墊片保護層16為金屬、金屬合金、金屬或金屬合金複合層、類似之材料或上述之組合。金屬例如錫、鎳、鈀、金、類似之材料或上述之組合。墊片保護層16可以藉由，例如浸漬電鍍(immersion plating)、電鍍(electro-plating)、無電極電鍍(electroless-plating)、類似之方法或上述之組合所形成。於一實施例中，墊片保護層16為錫，藉由浸漬電鍍(immersion plating)形成。於另一實施例中，墊片保護層16為化學鍍鎳鈀金(electroless nickel,electroless palladium,immersion gold,ENEPIG)。於其他實施例中，墊片保護層16各別為自組裝單層(self-assembled monnolayer)且可包括帶有修飾官能基的C4-C30烷基，其中官能基例如硫醇類(thiol)或醇基，官能基藉由浸漬、旋轉塗佈、印刷、類似之方法或上述之組合而形成。
於第4圖中，球狀釘栓(stud bulb)18形成於墊片保護層16之上。球狀釘栓(stud bulb)18之形成方法，例如，熔化導線的尖端，以於導線的每一個尖端形成球狀物。球狀物接著放置到墊片保護層16之上，藉由施加機械力、熱及/或超音波能量，以接合球狀物與墊片保護層16。之後，位於球狀物之上的導線被破壞(或因為外力、熱及/或超音波能量，而使先前的球狀物形狀受到破壞)。使用於此步驟之導線可以是銅、金、鋁、銀、合金、類似之材料或上述之組合。導線亦可以是摻雜元素的金屬。此外，導線可以是第一金屬外鍍第二金屬，例如，銅導線外鍍鈀。導線的直徑為約0.3-5密爾(mils)，例如1.5密爾。球狀釘栓(stud bulb)18因此具有與導線相同之材料。
於第5圖中，球狀釘栓保護塗層(bulb protective coating)20形成於各自的球狀釘栓(stud bulb)18之上。於一些實施例中，球狀釘栓保護塗層20可以是金屬、金屬合金、金屬或金屬合金複合層、類似之材料或上述之組合。金屬例如錫、鎳、鈀、金、銀、類似之材料或上述之組合。球狀釘栓保護塗層20可以藉由，例如浸漬電鍍(immersion plating)、電鍍(electro-plating)、無電極電鍍(electroless-plating)、類似之方法或上述之組合所形成。於一實施例中，球狀釘栓保護塗層20為錫，藉由浸漬電鍍(immersion plating)形成。於另一實施例中，球狀釘栓保護塗層20為化學鍍鎳鈀金(electroless nickel,electroless palladium,immersion gold,ENEPIG)。於其他實施例中，球狀釘栓保護塗層20各別為自組裝單層(self-assembled monnolayer)且可包括帶有修飾官能基的C4-C30烷基，其中官能基例如硫醇類(thiol)或醇基，官能基藉由浸漬、旋轉塗佈、印刷、類似之方法或上述之組合而形成。於又一實施例中，球狀釘栓保護塗層20分別為有機保焊劑(organic solderability preservative,OSP)，且藉由適合的技術所形成。球狀釘栓保護塗層20可提供一保護層於球狀釘栓(stud bulb)18之上，以避免球狀釘栓(stud bulb)18氧化，例如，當球狀釘栓(stud bulb)18是銅時，避免銅氧化物形成於球狀釘栓(stud bulb)18之上。
於第6圖中，提供一第二基板22，例如上層基板。第二基板可具有任何結構特徵或組成，如同前述之第一基板10。第二基板22具有墊片24，且墊片24位於第二基板22 之底表面上。於一實施例中，墊片24藉由穿過一保護層，直接連接到金屬層中各自的圖案。於另一實施例中，墊片24於金屬層中各自具有一圖案。墊片24可以是各自暴露的導通孔部份及/或形成於各自的導通孔部份之上。墊片24可以是金屬，金屬合金，或金屬複合層及/或金屬合金複合層。於一實施例中，墊片24是銅，於其他實施例中，墊片24可包括銅、金、鋁、鋁銅合金、類似之材料或上述之組合。墊片24提供一外部電性連接到各種裝置(device)及元件(component)，這些裝置及元件係形成於第二基板22之中及/或耦合到第二基板22。焊料26形成於墊片24之上。焊料26可以是任何焊料材料，例如不含鉛之焊料或類似之材料，且藉由適合的方法所形成。
於第7圖中，形成於第二基板22之上的焊料26接觸第一基板10之上的球狀釘栓(stud bulb)18，並且進行回焊，藉此形成已回焊之焊料連接結構(reflowed solder connector)28。已回焊之焊料連接結構(reflowed solder connector)28提供機械與電性連接，以連接第一基板10上的球狀釘栓(stud bulb)18與第二基板22上的墊片24。於第8圖中，模造化合物(molding compound)30分佈(disperse)於第一基板10與第二基板22之間的空間，且圍繞第一基板10與第二基板22之間的連接結構。模造化合物(molding compound)30可以是任何適合的材料，例如環氧樹脂或類似之材料。於其他實施例中，底部填充物、非導電膠、非導電薄膜或其他介電薄膜皆可用於取代模造化合物(molding compound)30。
值得一提的是，實施例(例如第8圖中的結構)可包括未繪製於圖中的其他結構特徵。舉例而言，第一基板10與第二基板22可各自具有額外的電性連接結構於各自的另一表面上。第一基板10的底表面與第二基板22的頂表面可具有球狀釘栓(stud bulb)、微凸塊(microbumps)、細小凸塊(minibumps)、柱狀結構(pillars)、柱形結構(columns)、球閘陣列(BGA balls)、控制塌陷高度晶片連接(controlled collapse chip connection bumps,C4 bumps)、類似之結構或上述之組合。此外，晶粒可位於第一基板與第二基板之任意表面上。舉例而言，晶粒可藉由電性連接結構接合到第一基板10與第二基板22各自的頂表面及/或底表面。於表面上可形成任意個晶粒。實施例中的其他結構特徵為熟知本領域人士可輕易得知。
依據本發明之實施例，第9圖到第14圖顯示本發明形成堆疊式封裝層疊結構(package-on-package,PoP)之第二種方法。於此實施例中，第一基板10與墊片12依據第1圖與第2圖所討論之步驟所形成。於第9圖中，墊片12的頂表面經過處理，形成已處理之表面(treated surface)32。處理步驟可以加強後續形成之球狀釘栓(stud bulb)與墊片之間的接合能力。於一實施例中，處理步驟包括使用氨氣(ammonia,NH3)、氬氣(Ar)、氧氣(O2)、臭氧(O3)、氫氣(H2)、氮氣(N2)、甲烷電漿。於另一實施例中，處理步驟包括對墊片12摻雜鍺(Ge)。亦可使用本領域人士所熟知的其他電漿處理步驟或其他摻雜物。
於第10圖中，使用如第4圖所討論之方法或類似之方 法，將球狀釘栓(stud bulb)18形成於已處理之表面(treated surface)32上。於第11圖中，使用先前於第5圖所討論之方法或類似之方法，將球狀釘栓保護塗層20形成於各自的球狀釘栓(stud bulb)18之上。第12圖至第14圖顯示提供第二基板，藉由回焊結合第一基板10與第二基板22，且使用先前於第6-8圖所討論之方法或類似之方法，提供模造化合物30於第一基板10與第二基板22之間。如先前實施例所討論，第14圖中的結構可具有其他並未顯示的結構特徵。
依據本發明之實施例，第15圖至第19圖顯示本發明形成堆疊式封裝層疊結構(package-on-package,PoP)之第三種方法。於此實施例中，第一基板10與墊片12依據第1圖與第2圖所討論之步驟所形成。於第15圖中，使用先前於第4圖所討論之方法或類似之方法，球狀釘栓(stud bulb)18直接形成於墊片12之上。於此實施例中，球狀釘栓(stud bulb)18可藉由直接金屬-金屬接合方法(direct metal-metal bond)接合到墊片12。球狀釘栓(stud bulb)18與墊片12可由相同材料所組成，例如銅、鋁、銅鋁合金、類似之材料或上述之組合。於其他實施例中，球狀釘栓(stud bulb)18可使用與墊片12不同的材料，舉例而言，當墊片12包括鋁或鋁銅合金時，球狀釘栓(stud bulb)18可包括銅。第16圖至第19圖顯示形成球狀釘栓保護塗層20於各自的球狀釘栓(stud bulb)18之上，提供第二基板22，藉由回焊接合第一基板10到第二基板22，以及使用先前於第5-8圖所討論之方法或類似之方法，提供模造化合物30於第一基板 10與第二基板22之間。如先前實施例所討論，第19圖之結構可包括未顯示之結構特徵。
依據本發明之實施例，第20圖至第24圖顯示球狀釘栓(stud bulb)18的各種形狀特徵，其中的任何形狀特徵亦可使用於先前的實施例中。第20圖顯示單一球狀釘栓(stud bulb)40，例如先前圖示中所顯示的球狀釘栓(stud bulb)18。單一球狀釘栓(stud bulb)40之形成可藉由熔化導線的尖端，於尖端形成球狀物。此球狀物接著放置於接合的表面上，藉由施加機械力、熱及/或超音波能量，以接合球狀物到接合表面。之後，位於球狀物之上的導線被破壞(或因為外力、熱及/或超音波能量，而使先前的球狀物形狀受到破壞)。單一球狀釘栓(stud bulb)40的直徑D為約0.3-5密爾(mils)，例如1.5密爾。單一球狀釘栓(stud bulb)40的高度H為約20-200微米(micrometers)，例如為約150微米。
第21圖顯示具有延伸尾狀物(elongated tail)44的單一球狀釘栓(stud bulb)42。形成具有延伸尾狀物(elongated tail)44的單一球狀釘栓(stud bulb)42之方法，例如，使用先前於第20圖所討論的形成單一球狀釘栓(stud bulb)40之方法或類似之方法，差異在於破壞與單一球狀釘栓(stud bulb)42間隔一段距離的導線，以留下延伸尾狀物(elongated tail)44。於其他實施例中，可調整其他製程的條件，以形成延伸尾狀物(elongated tail)44。延伸尾狀物(elongated tail)44具有高度H1為約10-200微米，例如為約100微米，且單一球狀釘栓(stud bulb)42具有高度H2為約5-80微米，例如為約50微米。
第22圖與第23圖各自顯示堆疊的單一球狀釘栓(stud bulb)。於第22圖中，單一球狀釘栓(stud bulb)46與48依序使用先前於第20圖所討論之形成單一球狀釘栓(stud bulb)40之方法或類似之方法所形成。於此實施例中，單一球狀釘栓(stud bulb)46與48具有相同的材料。舉例而言，單一球狀釘栓(stud bulb)46與48各自為銅。於第23圖中，單一球狀釘栓(stud bulb)50與52依序使用先前於第20圖所討論之形成單一球狀釘栓(stud bulb)40之方法或類似之方法所形成。於此實施例中，單一球狀釘栓(stud bulb)50與52具有不同的材料。舉例而言，單一球狀釘栓(stud bulb)50為金，單一球狀釘栓(stud bulb)52為銅。雖然第22圖與第23圖顯示2個單一球狀釘栓(stud bulb)，但是其他實施例可涵蓋(contemplate)多個單一球狀釘栓(stud bulb)，其中這些單一球狀釘栓(stud bulb)可為堆疊結構及/或包括各種材料之組合。
第24圖顯示單一球狀釘栓(stud bulb)的堆疊結構，堆疊結構的其中之一具有延伸尾狀物(elongated tail)。單一球狀釘栓(stud bulb)56具有延伸尾狀物(elongated tail)58，並且堆疊於單一球狀釘栓(stud bulb)54之上。單一球狀釘栓(stud bulb)54之形成係使用先前於第20圖所討論的形成單一球狀釘栓(stud bulb)之方法或類似之方法。具有延伸尾狀物(elongated tail)58的球狀釘栓(stud bulb)56之形成則是使用先前於第21圖所討論的形成具有延伸尾狀物(elongated tail)44的球狀釘栓(stud bulb)42之方法或類似之方法所形成。球狀釘栓(stud bulb)54與56可包括相同或不 同之材料，如第22圖與23圖所討論，此外，可包括其他單一球狀釘栓(stud bulb)堆疊結構。
第25圖至第28圖顯示其他實施例。第25圖與第26圖顯示：墊片12、墊片保護層16、球狀釘栓(stud bulb)18、球狀釘栓保護塗層20、已回焊之焊料連接結構(reflowed solder connector)28、墊片24，如同顯示於第8圖中的實施例。第25圖顯示單一球狀釘栓(stud bulb)18a對應於球狀釘栓(stud bulb)18。第26圖顯示，單一球狀釘栓(stud bulb)18b具有較高的高度及/或延伸尾狀物對應於球狀釘栓(stud bulb)18。於第25圖與第26圖中，舉例而言，墊片保護層16為化學鍍鎳鈀金(electroless nickel,electroless palladium,immersion gold,ENEPIG)。已回焊之焊料連接結構(reflowed solder connector)28沾潤於(wetted)墊片保護層16之頂表面，使得位於球狀釘栓(stud bulb)18之外的墊片保護層16之頂表面的全部(entirety)為已回焊之焊料連接結構28所接觸。須注意的是，頂表面的全部(entirety)是指大致上包括整個頂表面的全部，亦即依據適當的製程(如同本文所提及之製程)所造成的結果，如本領域人士應能了解此用語(entirety，全部)。
雖然並未特別顯示，當已處理之表面32(第14圖)及/或墊片12(第19圖)各別之頂表面做為球狀釘栓(stud bulb)18的接合表面時，焊料連接結構28可沾潤這些表面，類似於第25圖與第26圖。於其他實施例中，已回焊之焊料連接結構28可能不會沾潤已處理之表面32(第14圖)及/或墊片12(第19圖)各別之頂表面。
第27圖與第28圖顯示：墊片12、墊片保護層16、球狀釘栓(stud bulb)18、球狀釘栓保護塗層20、已回焊之焊料連接結構28、墊片24，如同顯示於第8圖中的實施例。第27圖顯示單一球狀釘栓(stud bulb)18a對應於球狀釘栓(stud bulb)。第28圖顯示單一球狀釘栓(stud bulb)18b具有較高的高度及/或延伸尾狀物對應於球狀釘栓(stud bulb)18。於第27圖與第28圖中，舉例而言，墊片保護層16為浸鍍錫(immersion tin)、自組裝單層(self-assembled monnolayer)或有機保焊劑(organic solderability preservative,OSP)結構。已回焊之焊料連接結構28並未沾潤墊片保護層16之頂表面，因此沿著墊片保護層16的周圍部份70並未接觸已回焊之焊料連接結構28，且周圍部份70被暴露在外。
第29圖顯示部份接合(partial joint)。舉例而言，當回焊時，焊料26不足以完全覆蓋球狀釘栓(stud bulb)18，因而形成部份接合。第29圖顯示具有較高的高度及/或延伸尾狀物的球狀釘栓(stud bulb)18，以接合到接合表面72。球狀釘栓保護塗層20形成於球狀釘栓(stud bulb)18之上。圍繞於球狀釘栓(stud bulb)18的已回焊後之焊料連接結構(reflowed solder connector)28被回焊且連接到接合表面74。舉例而言，接合表面72可以是墊片保護層16、已處理後表面(treated surface)32或墊片12，而接合表面74可以是墊片24。已回焊之焊料連接結構(reflowed solder connector)28並未完全覆蓋球狀釘栓(stud bulb)18b，且暴露出一部份的球狀釘栓保護塗層20。須注意的是，可以使 用各種不同的球狀釘栓(stud bulb)結構，例如單一球狀釘栓(stud bulb)、堆疊球狀釘栓(stud bulb)、具有較高高度的單一球狀釘栓(stud bulb)、具有延伸尾狀物之球狀釘栓(stud bulb)或上述之組合。
第30-33圖顯示球狀釘栓(stud bulb)的各種變化實施例。舉例而言，第30圖描述第25圖之結構，差異在於新增介金屬化合物(inter-metal compound,IMC)80。介金屬化合物(inter-metal compound,IMC)80形成於墊片保護層16的部份之上，該墊片保護層16的部份係指於回焊製程的過程中，被回焊的焊料所接觸的部份。介金屬化合物(IMC)80藉由下述方法形成，於回焊過程中，藉由焊料26中的材料與墊片保護層16反應而得。介金屬化合物(IMC)80可以是銅錫合金(例如Cu3Sn或Cu6Sn5)，鎳錫合金(例如Ni3Sn4)、類似之材料或上述之組合。
舉例而言，第31圖顯示第27圖中的結構，差異在於包括介金屬化合物(IMC)82且不包括球狀釘栓保護塗層20。介金屬化合物(IMC)82形成於球狀釘栓(stud bulb)18a的部份之上，且該球狀釘栓(stud bulb)18a的部份係指於回焊製程的過程中，被回焊的焊料所接觸的部份。介金屬化合物(IMC)82藉由下述方法形成，於回焊過程中，藉由焊料26中的材料與球狀釘栓(stud bulb)18a反應而得。介金屬化合物(IMC)82可以是銅錫合金(例如Cu3Sn或Cu6Sn5)或類似之材料。
於類似第31圖的實施例中，在對焊料26進行回焊步驟之前，球狀釘栓保護塗層20可形成於或可不形成於球狀 釘栓(stud bulb)18a之上。如此處所述，如果不形成球狀釘栓保護塗層20，介金屬化合物(IMC)82直接形成於球狀釘栓(stud bulb)18a之上。於一實施例中，如果形成球狀釘栓保護塗層20，於回焊過程中，球狀釘栓保護塗層20會被熔解，使介金屬化合物(IMC)82直接形成於球狀釘栓(stud bulb)18a之上。再者，雖然此處未描述，但可包括下述之實施例，在球狀釘栓(stud bulb)18a外表面之上具有球狀釘栓保護塗層20，且介金屬化合物(IMC)82直接形成於球狀釘栓保護塗層20之外表面上。於此實施例中，介金屬化合物(IMC)82可藉由類似於第31圖所討論之方法而形成。
舉例而言，第32圖描述第30圖的結構，差異在於包括介金屬化合物(IMC)82且不包括球狀釘栓保護塗層20。介金屬化合物(IMC)82形成於球狀釘栓(stud bulb)18a的部份之上，且該球狀釘栓(stud bulb)18a的部份係指於回焊製程的過程中，被回焊的焊料所接觸的部份。介金屬化合物(IMC)82可以是銅錫合金(例如Cu3Sn或Cu6Sn5)或類似之材料。
於類似第32圖的實施例中，在對焊料26進行回焊步驟之前，球狀釘栓保護塗層20可形成於或可不形成於球狀釘栓(stud bulb)18a之上。如此處所述，如果不形成球狀釘栓保護塗層20，介金屬化合物(IMC)82直接形成於球狀釘栓(stud bulb)18a之上。於一實施例中，如果形成球狀釘栓保護塗層20，於回焊過程中，球狀釘栓保護塗層20會被熔解，使介金屬化合物(IMC)82直接形成於球狀釘栓(stud bulb)18a之上。再者，雖然此處未描述，但可包括下述之 實施例，在球狀釘栓(stud bulb)18a外表面之上具有球狀釘栓保護塗層20，且介金屬化合物(IMC)82直接形成於球狀釘栓保護塗層20之外表面上。於此實施例中，介金屬化合物(IMC)82可藉由類似於第32圖所討論之方法而形成。
舉例而言，第33圖敘述第29圖的結構，差異在於包括介金屬化合物(IMC)84且不包括球狀釘栓保護塗層20。介金屬化合物(IMC)84形成於球狀釘栓(stud bulb)18b的部份之上，且該球狀釘栓(stud bulb)18b的部份係指於回焊製程的過程中，被回焊的焊料所接觸的部份。如前述所討論的部份接合，一部份球狀釘栓(stud bulb)18b並未被金屬化合物(IMC)84或是已回焊之焊料連接結構(reflowed solder connector)28所覆蓋。介金屬化合物(IMC)84藉由下述方法形成，於回焊過程中，藉由焊料26中的材料與球狀釘栓(stud bulb)18b反應而得。介金屬化合物(IMC)84可以是銅錫合金(例如Cu3Sn或Cu6Sn5)或類似之材料。
於類似第33圖的實施例中，在對焊料26進行回焊步驟之前，球狀釘栓保護塗層20可形成於或可不形成於球狀釘栓(stud bulb)18b之上。如此處所述，如果不形成球狀釘栓保護塗層20，介金屬化合物(IMC)84直接形成於球狀釘栓(stud bulb)18b之上。於一實施例中，如果形成球狀釘栓保護塗層20，於回焊過程中，球狀釘栓保護塗層20會被熔解，使介金屬化合物(IMC)84直接形成於球狀釘栓(stud bulb)18b之上。再者，雖然此處未描述，但可包括下述之實施例，在球狀釘栓(stud bulb)18b外表面之上具有球狀釘栓保護塗層20，且介金屬化合物(IMC)84直接形成於球狀 釘栓保護塗層20之外表面上。於此實施例中，介金屬化合物(IMC)84可藉由類似於第33圖所討論之方法而形成。
第34圖與第35圖分別描述封裝結構的元件佈局圖與剖面圖。封裝結構包括基板90(例如於上述實施例之第一基板10)、球狀釘栓(stud bulb)92位於基板90頂表面之上與一晶粒94附著於基板90頂表面之上。如第35圖所示，電性連接結構(electrical connector)96連接晶粒94到基板90。電性連接結構(electrical connector)96可以是，例如，微凸塊(microbumps)、細小凸塊(minibumps)、控制塌陷高度晶片連接(controlled collapse chip connection bumps,C4 bumps)或類似之結構。第34圖與第35圖亦顯示介於球狀釘栓(stud bulb)92之間的間距(pitch)P。舉例而言，間距，小於100微米，或介於50-90微米之間，例如80微米。須注意的是，此結構可以是堆疊式封裝層疊結構(package-on-package,PoP)的底層基板，並且可以具有，例如，球閘陣列封裝球(ball grid array ball,BGA ball)位於底表面上。此外，其他封裝結構(例如顯示於第1-19圖中的實施例)可位於該結構之頂表面，以形成堆疊式封裝層疊結構(package-on-package,PoP)。
第36圖顯示本發明一實施例之堆疊式封裝層疊結構(package-on-package,PoP)。第36圖中的結構包括如第34圖與第35圖所討論之元件。該結構尚包括電性連接結構98，例如球閘陣列封裝球(ball grid array ball,BGA ball)位於基板90之底表面上。此外，第二基板102藉由回焊後之焊料連接結構(reflowed solder connector)100附著到基板 90，回焊後之焊料連接結構100耦合到第二基板的底表面。如前述實施例所述，圍繞於球狀釘栓(stud bulb)92之回焊後之焊料連接結構100被回焊。第二晶粒104藉由電性連接結構106附著到第二基板102之頂表面上，電性連接結構106同於或類似於電性連接結構96。先前所討論的球狀釘栓(stud bulb)的結構特徵或其他元件亦可應用於第36圖的結構中。再者，額外的晶粒可位於結構之上，例如位於基板90與102之底表面上及/或位於基板90與102之頂表面之上。甚至於，其他封裝結構可形成於第二基板102之頂表面之上，第二基板102可使用或可不使用此處所述之球狀釘栓(stud bulb)或其他結構特徵。
第37圖至第40圖顯示合併先前所述之結構特徵所形成的各種封裝結構，這些封裝結構亦可使用於第36圖中的堆疊式封裝層疊結構(package-on-package,PoP)。第37圖至第40圖包括第34圖與第35圖之元件，因此，不詳細討論位於第37圖至第40圖中的元件。於第37圖中，封裝結構包括球狀釘栓(stud bulb)110，其中球狀釘栓(stud bulb)110之高度高於晶粒94之頂表面。舉例而言，球狀釘栓(stud bulb)110之高度為約20-80微米，例如約50微米。球狀釘栓(stud bulb)110之直徑為約10-80微米，例如約30微米。
於第38圖中，封裝結構包括堆疊的球狀釘栓(stud bulb)112，其中球狀釘栓(stud bulb)112包括兩個單一球狀釘栓(stud bulb)。堆疊的球狀釘栓(stud bulb)112之高度高於晶粒94之頂表面。舉例而言，堆疊的球狀釘栓(stud bulb)112之高度為約30-200微米，例如約150微米。球狀 釘栓(stud bulb)110之直徑為約20-150微米，例如約80微米。
於第39圖中，封裝結構包括具有延伸尾狀物之球狀釘栓(stud bulb)114。具有延伸尾狀物之球狀釘栓(stud bulb)114之高度高於晶粒94之頂表面。舉例而言，具有延伸尾狀物之球狀釘栓(stud bulb)114之高度為約30-200微米，例如約150微米。具有延伸尾狀物之球狀釘栓(stud bulb)114之直徑為約20-150微米，例如約80微米。
於第40圖中，封裝結構包括具有球狀釘栓(stud bulb)116。球狀釘栓(stud bulb)116之高度低於晶粒94之頂表面。舉例而言，球狀釘栓(stud bulb)116之高度為約10-50微米，例如約30微米。球狀釘栓(stud bulb)116之直徑為約5-50微米，例如約30微米。於一實施例中，形成球狀釘栓(stud bulb)116之製法包括降低球狀釘栓(stud bulb)116之高度及/或直徑，例如藉由雷射鑽孔技術(laser drilling)。
藉由形成球狀釘栓(stud bulb)於堆疊式封裝層疊結構(package-on-package,PoP)中，連線於封裝結構的連接結構彼此之間的間距(pitch)，可小於100微米，因此，可以增加連接結構的密度。再者，於實施例中，可藉由選擇導線及/或製程參數的控制決定球狀釘栓(stud bulb)的高度與間距。製作球狀釘栓(stud bulb)的製程是可調整的(flexible)，且可適用於各種封裝尺寸。此外，實施例中亦可使用各種材料，這些材料可與習知的製程相容(compatible)。
本發明第一實施例是一種封裝結構，包括：一第一基板；複數個球狀釘栓(stud bulb)耦合到該第一基板之第一表 面；一晶粒黏著至該第一基板之第一表面；一第二基板；以及複數個電性連接結構耦合到該第二基板，每一個電性連接結構分別耦合到對應的球狀釘栓(stud bulb)。
本發明另一實施例是一種封裝結構，包括：一第一基板包括一第一墊片位於該第一基板的一第一表面上，一晶粒附著於該第一基板的一第一表面；一第二基板包括一第二墊片位於該第二基板的一第一表面上；一球狀釘栓(stud bulb)位於該第一墊片之上；以及一焊料連接結構(solderconnector)耦合該球狀釘栓(stud bulb)到該第二墊片。
本發明又一實施例是一種封裝結構之形成方法。方法包括提供一第一基板，一第一墊片形成於該第一基板的一第一表面上，一晶粒附著於該第一基板的一第一表面；形成一球狀釘栓(stud bulb)於該第一墊片之上；提供一第二基板，其中一第二墊片位於該第二基板的一第一表面上；以及耦合一電性連接結構到該球狀釘栓(stud bulb)與該第二墊片。
本發明又提供一種封裝結構，包括：一第一接合墊位於一第一基板的一第一表面上；一晶粒附著到該第一基板的第一表面；一第二接合墊位於一第二基板的一第二表面上，其中該第一表面相對於該第二表面，該晶粒設置於該第一表面與該第二表面之間；一球狀釘栓(stud bulb)位於該第一接合墊之上；以及焊料機械性地耦合該球狀釘栓(stud bulb)到該第二接合墊。
雖然本發明已以數個較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者， 在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10‧‧‧基板
12‧‧‧墊片
14‧‧‧有機保焊劑(organic solderability preservative,OSP)
16‧‧‧墊片保護層
18‧‧‧球狀釘栓(stud bulb)
20‧‧‧球狀釘栓保護塗層
22‧‧‧第二基板
24‧‧‧墊片
26‧‧‧焊料
28‧‧‧已回焊之焊料連接結構(reflowed solder connector)
30‧‧‧模造化合物(molding compound)
32‧‧‧已處理之表面(treated surface)
40‧‧‧單一球狀釘栓(stud bulb)
42‧‧‧單一球狀釘栓(stud bulb)
44‧‧‧延伸尾狀物(elongated tail)
46、48‧‧‧單一球狀釘栓(stud bulb)
50、52、54、56‧‧‧單一球狀釘栓(stud bulb)
58‧‧‧延伸尾狀物(elongated tail)
70‧‧‧沿著墊片保護層的周圍部份
72、74‧‧‧接合表面
80、82、84‧‧‧介金屬化合物(inter-metal compound,IMC)
90‧‧‧基板
92‧‧‧球狀釘栓(stud bulb)
94‧‧‧晶粒
96、98‧‧‧電性連接結構(electrical connector)
100‧‧‧回焊後之焊料連接結構(reflowed solder connector)
102‧‧‧第二基板
104‧‧‧第二晶粒
106‧‧‧電性連接結構(electrical connector)
110‧‧‧球狀釘栓(stud bulb)
112‧‧‧堆疊的球狀釘栓(stud bulb)
114‧‧‧具有延伸尾狀物之球狀釘栓(stud bulb)
116‧‧‧球狀釘栓(stud bulb)
第1~8圖為一系列剖面圖，用以本發明一實施例之形成堆疊式封裝層疊結構(package-on-package,PoP)的第一種方法。
第9~14圖為一系列剖面圖，用以說明本發明一實施例之形成堆疊式封裝層疊結構(package-on-package,PoP)的第二種方法。
第15~19圖為一系列剖面圖，用以說明本發明一實施例之形成堆疊式封裝層疊結構(package-on-package,PoP)的第三種方法。
第20圖為一剖面圖，用以說明本發明一實施例之單一球狀釘栓(stud bulb)。
第21圖為一剖面圖，用以說明本發明一實施例之具有延伸尾狀物(elongated tail)的單一球狀釘栓(stud bulb)。
第22圖為一剖面圖，用以說明本發明一實施例之具有相同材料的球狀釘栓(stud bulb)堆疊結構。
第23圖為一剖面圖，用以說明本發明一實施例之具有不同材料的球狀釘栓(stud bulb)堆疊結構。
第24圖為一剖面圖，用以說明本發明一實施例之球狀釘栓(stud bulb)之堆疊結構，其中一個球狀釘栓(stud bulb)具有延伸尾狀物。
第25圖為一剖面圖，用以說明本發明一實施例之單一 球狀釘栓(stud bulb)與已回焊之焊料連接結構(reflowed solder connector)之接合結構，其中已回焊之焊料連接結構沾潤於(wetted)墊片保護層。
第26圖為一剖面圖，用以說明本發明一實施例之具有較高高度及/或延伸尾狀物之單一球狀釘栓(stud bulb)與已回焊之焊料連接結構(reflowed solder connector)之接合結構，其中已回焊之焊料連接結構沾潤於(wetted)墊片保護層。
第27圖為一剖面圖，用以說明本發明一實施例之單一球狀釘栓(stud bulb)與已回焊之焊料連接結構(reflowed solder connector)之接合結構，其中已回焊之焊料連接結構不沾潤(wetted)墊片保護層。
第28圖為一剖面圖，用以說明本發明一實施例之具有較高高度及/或延伸尾狀物之單一球狀釘栓(stud bulb)與已回焊之焊料連接結構(reflowed solder connector)之接合結構，其中已回焊之焊料連接結構不沾潤(wetted)墊片保護層。
第29圖為一剖面圖，用以說明本發明一實施例之部份接合(partial joint)。
第30圖為一剖面圖，用以說明本發明一實施例之單一球狀釘栓(stud bulb)與介金屬化合物(IMC)形成於墊片保護層之上的接合結構。
第31圖為一剖面圖，用以說明本發明一實施例之單一球狀釘栓(stud bulb)與介金屬化合物(IMC)形成於其上之接合結構。
第32圖為一剖面圖，用以說明本發明一實施例之單一球狀釘栓(stud bulb)與介金屬化合物(IMC)形成於墊片保護層與單一球狀釘栓(stud bulb)之上之接合結構。
第33圖為一剖面圖，用以說明本發明一實施例之介金屬化合物(IMC)形成於球狀釘栓(stud bulb)之上之接合結構。
第34圖為依據本發明一實施例之封裝結構的元件佈局圖。
第35圖為依據本發明一實施例之封裝結構的元件剖面圖。
第36圖為一剖面圖，用以說明本發明一實施例之堆疊式封裝層疊結構(package-on-package,PoP)。
第37圖為一剖面圖，用以說明本發明一實施例之封裝結構，其包括球狀釘栓(stud bulb)之高度高於晶粒之頂表面。
第38圖為一剖面圖，用以說明本發明一實施例之封裝結構，其包括球狀釘栓(stud bulb)的堆疊結構高度高於晶粒之頂表面。
第39圖為一剖面圖，用以說明本發明一實施例之封裝結構，其包括具有延伸尾狀物之球狀釘栓(stud bulb)的高度高於晶粒之頂表面。
第40圖為一剖面圖，用以說明本發明一實施例之封裝結構，其包括球狀釘栓(stud bulb)的高度不高於晶粒之頂表面。
10‧‧‧基板
12‧‧‧墊片
16‧‧‧墊片保護層
18‧‧‧球狀釘栓(stud bulb)
20‧‧‧球狀釘栓保護塗層
22‧‧‧第二基板
24‧‧‧墊片
28‧‧‧已回焊之焊料連接結構(reflowed solder connector)
30‧‧‧模造化合物(molding compound)

Claims (10)

  1. 一種封裝結構，包括：一第一基板；複數個球狀釘栓(stud bulb)耦合到該第一基板之第一表面；一晶粒黏著至該第一基板之第一表面；一第二基板；以及複數個電性連接結構耦合到該第二基板，每一個電性連接結構分別耦合到對應的球狀釘栓(stud bulb)。
  2. 如申請專利範圍第1項所述之封裝結構，其中該第一基板包括複數個墊片，每一個墊片保護層分別對應於每一個墊片之上，每一個球狀釘栓(stud bulb)分別接合到對應的墊片保護層。
  3. 如申請專利範圍第1項所述之封裝結構，尚包括：複數個保護覆蓋層分別位於各自的球狀釘栓(stud bulb)之上，各自的保護覆蓋層位於其所對應的球狀釘栓(stud bulb)與電性連接結構之間。
  4. 如申請專利範圍第1項所述之封裝結構，其中該第一基板包括複數個墊片，各自的墊片包括對應的已處理之表面(treated surface)，各自的球狀釘栓(stud bulb)分別接合到對應的已處理之表面。
  5. 如申請專利範圍第1項所述之封裝結構，其中該第一基板包括複數個墊片，各自的球狀釘栓(stud bulb)分別直接接合到對應的墊片。
  6. 如申請專利範圍第1項所述之封裝結構，其中該各 自的球狀釘栓(stud bulb)包括(1)單一球狀釘栓(stud bulb)；(2)具有延伸尾狀物之單一球狀釘栓(stud bulb)；(3)至少兩個單一球狀釘栓(stud bulb)的堆疊結構；(4)具有延伸尾狀物之一第一單一球狀釘栓(stud bulb)堆疊於一第二單一球狀釘栓(stud bulb)之上；或(5)上述之組合。
  7. 如申請專利範圍第1項所述之封裝結構，其中該各自的墊片與其對應的電性連接結構形成一部份連接(partial joint)。
  8. 如申請專利範圍第1項所述之封裝結構，尚包括：一介金屬化合物介於彼此對應的電性連接結構與球狀釘栓(stud bulb)之間。
  9. 一種封裝結構，包括：一第一接合墊位於一第一基板的一第一表面上；一晶粒附著到該第一基板的第一表面；一第二接合墊位於一第二基板的一第二表面上，其中該第一表面相對於該第二表面，該晶粒設置於該第一表面與該第二表面之間；一球狀釘栓(stud bulb)位於該第一接合墊之上；以及焊料機械性地耦合該球狀釘栓(stud bulb)到該第二接合墊。
  10. 如申請專利範圍第9項所述之封裝結構，其中該球狀釘栓(stud bulb)包括(1)一單一球狀釘栓(stud bulb)；(2)具有一延伸尾狀物之一單一球狀釘栓(stud bulb)；(3)至少兩個單一球狀釘栓(stud bulb)的堆疊結構；(4)具有延伸尾狀物之一第一單一球狀釘栓(stud bulb)堆疊於一第二單一球狀 釘栓(stud bulb)之上；或(5)上述之組合。
TW101122590A 2011-11-30 2012-06-25 封裝結構 TWI483357B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161565280P 2011-11-30 2011-11-30
US13/397,747 US8912651B2 (en) 2011-11-30 2012-02-16 Package-on-package (PoP) structure including stud bulbs and method

Publications (2)

Publication Number Publication Date
TW201322389A true TW201322389A (zh) 2013-06-01
TWI483357B TWI483357B (zh) 2015-05-01

Family

ID=48466086

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101122590A TWI483357B (zh) 2011-11-30 2012-06-25 封裝結構

Country Status (4)

Country Link
US (5) US8912651B2 (zh)
KR (1) KR101412947B1 (zh)
CN (1) CN103137589A (zh)
TW (1) TWI483357B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI822327B (zh) * 2021-11-04 2023-11-11 達發科技股份有限公司 半導體封裝

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8525314B2 (en) 2004-11-03 2013-09-03 Tessera, Inc. Stacked packaging improvements
US8058101B2 (en) 2005-12-23 2011-11-15 Tessera, Inc. Microelectronic packages and methods therefor
US9159708B2 (en) 2010-07-19 2015-10-13 Tessera, Inc. Stackable molded microelectronic packages with area array unit connectors
US8482111B2 (en) 2010-07-19 2013-07-09 Tessera, Inc. Stackable molded microelectronic packages
US20120146206A1 (en) 2010-12-13 2012-06-14 Tessera Research Llc Pin attachment
US8618659B2 (en) 2011-05-03 2013-12-31 Tessera, Inc. Package-on-package assembly with wire bonds to encapsulation surface
KR101128063B1 (ko) 2011-05-03 2012-04-23 테세라, 인코포레이티드 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리
US9105483B2 (en) 2011-10-17 2015-08-11 Invensas Corporation Package-on-package assembly with wire bond vias
US8912651B2 (en) 2011-11-30 2014-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. Package-on-package (PoP) structure including stud bulbs and method
US8946757B2 (en) 2012-02-17 2015-02-03 Invensas Corporation Heat spreading substrate with embedded interconnects
US8372741B1 (en) 2012-02-24 2013-02-12 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface
US9768137B2 (en) * 2012-04-30 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Stud bump structure for semiconductor package assemblies
US8835228B2 (en) 2012-05-22 2014-09-16 Invensas Corporation Substrate-less stackable package with wire-bond interconnect
US9391008B2 (en) 2012-07-31 2016-07-12 Invensas Corporation Reconstituted wafer-level package DRAM
US9502390B2 (en) 2012-08-03 2016-11-22 Invensas Corporation BVA interposer
CN102773749A (zh) * 2012-08-28 2012-11-14 昆山北钜机械有限公司 链式刀库
US8878353B2 (en) 2012-12-20 2014-11-04 Invensas Corporation Structure for microelectronic packaging with bond elements to encapsulation surface
US10128175B2 (en) * 2013-01-29 2018-11-13 Taiwan Semiconductor Manufacturing Company Packaging methods and packaged semiconductor devices
US9136254B2 (en) 2013-02-01 2015-09-15 Invensas Corporation Microelectronic package having wire bond vias and stiffening layer
US9167710B2 (en) 2013-08-07 2015-10-20 Invensas Corporation Embedded packaging with preformed vias
US9685365B2 (en) 2013-08-08 2017-06-20 Invensas Corporation Method of forming a wire bond having a free end
US9633869B2 (en) * 2013-08-16 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Packages with interposers and methods for forming the same
US20150076714A1 (en) 2013-09-16 2015-03-19 Invensas Corporation Microelectronic element with bond elements to encapsulation surface
US9583456B2 (en) 2013-11-22 2017-02-28 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9379074B2 (en) 2013-11-22 2016-06-28 Invensas Corporation Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects
US9263394B2 (en) 2013-11-22 2016-02-16 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9583411B2 (en) 2014-01-17 2017-02-28 Invensas Corporation Fine pitch BVA using reconstituted wafer with area array accessible for testing
KR20150091932A (ko) * 2014-02-04 2015-08-12 앰코 테크놀로지 코리아 주식회사 반도체 디바이스의 제조 방법 및 이에 따른 반도체 디바이스
US10381326B2 (en) 2014-05-28 2019-08-13 Invensas Corporation Structure and method for integrated circuits packaging with increased density
US9646917B2 (en) 2014-05-29 2017-05-09 Invensas Corporation Low CTE component with wire bond interconnects
US9412714B2 (en) 2014-05-30 2016-08-09 Invensas Corporation Wire bond support structure and microelectronic package including wire bonds therefrom
CN104157617B (zh) * 2014-07-29 2017-11-17 华为技术有限公司 芯片集成模块、芯片封装结构及芯片集成方法
US20170309584A1 (en) * 2014-10-23 2017-10-26 Agency For Science, Technology And Research Method of bonding a first substrate and a second substrate
US11018099B2 (en) * 2014-11-26 2021-05-25 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure having a conductive bump with a plurality of bump segments
US9735084B2 (en) 2014-12-11 2017-08-15 Invensas Corporation Bond via array for thermal conductivity
US9859200B2 (en) * 2014-12-29 2018-01-02 STATS ChipPAC Pte. Ltd. Integrated circuit packaging system with interposer support structure mechanism and method of manufacture thereof
US9888579B2 (en) 2015-03-05 2018-02-06 Invensas Corporation Pressing of wire bond wire tips to provide bent-over tips
US9502372B1 (en) 2015-04-30 2016-11-22 Invensas Corporation Wafer-level packaging using wire bond wires in place of a redistribution layer
US9761554B2 (en) 2015-05-07 2017-09-12 Invensas Corporation Ball bonding metal wire bond wires to metal pads
US20160343646A1 (en) * 2015-05-21 2016-11-24 Qualcomm Incorporated High aspect ratio interconnect for wafer level package (wlp) and integrated circuit (ic) package
KR102367404B1 (ko) 2015-08-03 2022-02-25 삼성전자주식회사 반도체 패키지의 제조 방법
US20180226377A1 (en) * 2015-08-27 2018-08-09 Intel IP Corporation Robust intermetallic compound layer interface for package in package embedding
FR3041625B1 (fr) * 2015-09-29 2021-07-30 Tronics Microsystems Dispositif de fixation de deux elements tels qu'une puce, un interposeur et un support
US10490528B2 (en) 2015-10-12 2019-11-26 Invensas Corporation Embedded wire bond wires
US9490222B1 (en) 2015-10-12 2016-11-08 Invensas Corporation Wire bond wires for interference shielding
US10332854B2 (en) 2015-10-23 2019-06-25 Invensas Corporation Anchoring structure of fine pitch bva
US10181457B2 (en) 2015-10-26 2019-01-15 Invensas Corporation Microelectronic package for wafer-level chip scale packaging with fan-out
US10043779B2 (en) 2015-11-17 2018-08-07 Invensas Corporation Packaged microelectronic device for a package-on-package device
US9659848B1 (en) 2015-11-18 2017-05-23 Invensas Corporation Stiffened wires for offset BVA
US11037904B2 (en) * 2015-11-24 2021-06-15 Taiwan Semiconductor Manufacturing Company, Ltd. Singulation and bonding methods and structures formed thereby
WO2017095094A2 (ko) * 2015-11-30 2017-06-08 하나마이크론(주) 메탈 코어 솔더 볼 인터커넥터 팬-아웃 웨이퍼 레벨 패키지 및 그 제조 방법
US9984992B2 (en) 2015-12-30 2018-05-29 Invensas Corporation Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces
US9935075B2 (en) 2016-07-29 2018-04-03 Invensas Corporation Wire bonding method and apparatus for electromagnetic interference shielding
US10299368B2 (en) 2016-12-21 2019-05-21 Invensas Corporation Surface integrated waveguides and circuit structures therefor
US20180315725A1 (en) * 2017-04-26 2018-11-01 Nanya Technology Corporation Package structure having bump with protective anti-oxidation coating
US11139260B2 (en) * 2019-09-17 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Plurality of stacked pillar portions on a semiconductor structure
KR20220150481A (ko) * 2021-05-03 2022-11-11 삼성전자주식회사 지지 솔더볼을 포함하는 반도체 패키지
DE102021130307A1 (de) * 2021-11-19 2023-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip und verfahren zum verbinden eines halbleiterchips mit einem anschlussträger

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5889326A (en) * 1996-02-27 1999-03-30 Nec Corporation Structure for bonding semiconductor device to substrate
US20030001286A1 (en) * 2000-01-28 2003-01-02 Ryoichi Kajiwara Semiconductor package and flip chip bonding method therein
JP2002151551A (ja) * 2000-11-10 2002-05-24 Hitachi Ltd フリップチップ実装構造、その実装構造を有する半導体装置及び実装方法
TW508987B (en) * 2001-07-27 2002-11-01 Phoenix Prec Technology Corp Method of forming electroplated solder on organic printed circuit board
US6853076B2 (en) * 2001-09-21 2005-02-08 Intel Corporation Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same
JP3829325B2 (ja) * 2002-02-07 2006-10-04 日本電気株式会社 半導体素子およびその製造方法並びに半導体装置の製造方法
US20040084206A1 (en) * 2002-11-06 2004-05-06 I-Chung Tung Fine pad pitch organic circuit board for flip chip joints and board to board solder joints and method
US7372151B1 (en) * 2003-09-12 2008-05-13 Asat Ltd. Ball grid array package and process for manufacturing same
US20060055032A1 (en) * 2004-09-14 2006-03-16 Kuo-Chin Chang Packaging with metal studs formed on solder pads
JP2006156544A (ja) * 2004-11-26 2006-06-15 Denso Corp 基板の実装構造およびその実装方法
WO2006126361A1 (ja) * 2005-05-24 2006-11-30 Matsushita Electric Industrial Co., Ltd. ハンダバンプ形成方法および半導体素子の実装方法
JP2007165443A (ja) 2005-12-12 2007-06-28 Toshiba Corp 半導体装置およびその製造方法
US7521284B2 (en) * 2007-03-05 2009-04-21 Texas Instruments Incorporated System and method for increased stand-off height in stud bumping process
US8409920B2 (en) * 2007-04-23 2013-04-02 Stats Chippac Ltd. Integrated circuit package system for package stacking and method of manufacture therefor
US20090014852A1 (en) * 2007-07-11 2009-01-15 Hsin-Hui Lee Flip-Chip Packaging with Stud Bumps
US20090057866A1 (en) * 2007-08-27 2009-03-05 Chow Linda L W Microelectronic Package Having Second Level Interconnects Including Stud Bumps and Method of Forming Same
JP2009099597A (ja) * 2007-10-12 2009-05-07 Nec Electronics Corp 半導体装置およびその製造方法
TW200924087A (en) * 2007-11-19 2009-06-01 Advanced Semiconductor Eng Chip structure, substrate structure, chip package structure and process thereof
JP2009238969A (ja) * 2008-03-27 2009-10-15 Panasonic Corp 電子部品の実装構造および電子部品実装体の製造方法
TWI499024B (zh) * 2009-01-07 2015-09-01 Advanced Semiconductor Eng 堆疊式多封裝構造裝置、半導體封裝構造及其製造方法
US8198131B2 (en) * 2009-11-18 2012-06-12 Advanced Semiconductor Engineering, Inc. Stackable semiconductor device packages
US9105647B2 (en) 2010-05-17 2015-08-11 Stats Chippac, Ltd. Method of forming perforated opening in bottom substrate of flipchip pop assembly to reduce bleeding of underfill material
EP2405468A1 (en) * 2010-07-05 2012-01-11 ATOTECH Deutschland GmbH Method to form solder deposits on substrates
US8525318B1 (en) * 2010-11-10 2013-09-03 Amkor Technology, Inc. Semiconductor device and fabricating method thereof
US8466544B2 (en) * 2011-02-25 2013-06-18 Stats Chippac, Ltd. Semiconductor device and method of forming interposer and opposing build-up interconnect structure with connecting conductive TMV for electrical interconnect of Fo-WLCSP
TWM418400U (en) * 2011-07-04 2011-12-11 Azurewave Technologies Inc Upright Stacked Light-emitting 2 LED structure
US8476770B2 (en) * 2011-07-07 2013-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and methods for forming through vias
US9553162B2 (en) * 2011-09-15 2017-01-24 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming semiconductor die with active region responsive to external stimulus
US8809117B2 (en) * 2011-10-11 2014-08-19 Taiwain Semiconductor Manufacturing Company, Ltd. Packaging process tools and packaging methods for semiconductor devices
US9105483B2 (en) * 2011-10-17 2015-08-11 Invensas Corporation Package-on-package assembly with wire bond vias
US9030022B2 (en) * 2011-10-24 2015-05-12 Taiwan Semiconductor Manufacturing Company, Ltd. Packages and methods for forming the same
US9105552B2 (en) * 2011-10-31 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package devices and methods of packaging semiconductor dies
US8912651B2 (en) * 2011-11-30 2014-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. Package-on-package (PoP) structure including stud bulbs and method
US8823180B2 (en) * 2011-12-28 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package devices and methods of packaging semiconductor dies
US20130234317A1 (en) * 2012-03-09 2013-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Packaging Methods and Packaged Semiconductor Devices
US9082780B2 (en) * 2012-03-23 2015-07-14 Stats Chippac, Ltd. Semiconductor device and method of forming a robust fan-out package including vertical interconnects and mechanical support layer
US8922005B2 (en) * 2012-04-11 2014-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for package on package devices with reversed stud bump through via interconnections
US9171790B2 (en) * 2012-05-30 2015-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package devices and methods of packaging semiconductor dies
US8703539B2 (en) * 2012-06-29 2014-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple die packaging interposer structure and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI822327B (zh) * 2021-11-04 2023-11-11 達發科技股份有限公司 半導體封裝

Also Published As

Publication number Publication date
CN103137589A (zh) 2013-06-05
US20150132889A1 (en) 2015-05-14
US9812427B2 (en) 2017-11-07
US8912651B2 (en) 2014-12-16
US20180047709A1 (en) 2018-02-15
US9502394B2 (en) 2016-11-22
TWI483357B (zh) 2015-05-01
US20170025391A1 (en) 2017-01-26
US10157893B2 (en) 2018-12-18
KR101412947B1 (ko) 2014-06-26
US20130134588A1 (en) 2013-05-30
US20190123027A1 (en) 2019-04-25
US10510731B2 (en) 2019-12-17
KR20130061039A (ko) 2013-06-10

Similar Documents

Publication Publication Date Title
TWI483357B (zh) 封裝結構
US9082763B2 (en) Joint structure for substrates and methods of forming
US9449941B2 (en) Connecting function chips to a package to form package-on-package
US8378471B2 (en) Semiconductor chip bump connection apparatus and method
US9508666B2 (en) Packaging structures and methods with a metal pillar
US10453815B2 (en) Methods and apparatus for solder connections
US20140103097A1 (en) Circuit board, semiconductor device, and method of manufacturing semiconductor device
US20140252657A1 (en) Package Alignment Structure and Method of Forming Same
KR100961309B1 (ko) 반도체 패키지
KR101211724B1 (ko) 반도체 패키지 및 그 제조방법
US9024439B2 (en) Substrates having bumps with holes, semiconductor chips having bumps with holes, semiconductor packages formed using the same, and methods of fabricating the same
JP3847602B2 (ja) 積層型半導体装置及びその製造方法並びに半導体装置搭載マザーボード及び半導体装置搭載マザーボードの製造方法
US9601374B2 (en) Semiconductor die assembly
KR100961308B1 (ko) 반도체 패키지
US20040256737A1 (en) [flip-chip package substrate and flip-chip bonding process thereof]
JP2013110264A (ja) 半導体装置及び半導体装置の製造方法
JP2010186926A (ja) 半導体装置の製造方法及び半導体装置