CN103098218B - 沉积薄膜晶体管的方法与系统 - Google Patents

沉积薄膜晶体管的方法与系统 Download PDF

Info

Publication number
CN103098218B
CN103098218B CN201180043434.4A CN201180043434A CN103098218B CN 103098218 B CN103098218 B CN 103098218B CN 201180043434 A CN201180043434 A CN 201180043434A CN 103098218 B CN103098218 B CN 103098218B
Authority
CN
China
Prior art keywords
sputtering
substrate
target
deposition
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201180043434.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN103098218A (zh
Inventor
E·谢尔
O·格劳
R·韦伯
U·施赖伯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN103098218A publication Critical patent/CN103098218A/zh
Application granted granted Critical
Publication of CN103098218B publication Critical patent/CN103098218B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
CN201180043434.4A 2010-09-10 2011-08-31 沉积薄膜晶体管的方法与系统 Expired - Fee Related CN103098218B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10176247A EP2428994A1 (en) 2010-09-10 2010-09-10 Method and system for depositing a thin-film transistor
EP10176247.4 2010-09-10
PCT/EP2011/065046 WO2012031962A1 (en) 2010-09-10 2011-08-31 Method and system for depositing a thin-film transistor

Publications (2)

Publication Number Publication Date
CN103098218A CN103098218A (zh) 2013-05-08
CN103098218B true CN103098218B (zh) 2017-04-12

Family

ID=43430788

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180043434.4A Expired - Fee Related CN103098218B (zh) 2010-09-10 2011-08-31 沉积薄膜晶体管的方法与系统

Country Status (7)

Country Link
US (1) US7977255B1 (enExample)
EP (1) EP2428994A1 (enExample)
JP (1) JP2013539219A (enExample)
KR (1) KR20130102591A (enExample)
CN (1) CN103098218B (enExample)
TW (1) TWI524432B (enExample)
WO (1) WO2012031962A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI633605B (zh) * 2008-10-31 2018-08-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101648927B1 (ko) 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101671210B1 (ko) * 2009-03-06 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US9142462B2 (en) 2010-10-21 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having a contact etch stop layer and method of forming the same
KR102440877B1 (ko) 2011-02-16 2022-09-05 더 제너럴 하스피탈 코포레이션 내시경용 광 결합기
US12471759B2 (en) 2011-02-16 2025-11-18 The General Hospital Corporation Optical coupler for an endoscope
EP2867387A4 (en) * 2012-06-29 2016-03-09 Semiconductor Energy Lab METHOD OF USE OF A SPUTTER TARGET AND METHOD FOR PRODUCING AN OXID FILM
TWI681233B (zh) 2012-10-12 2020-01-01 日商半導體能源研究所股份有限公司 液晶顯示裝置、觸控面板及液晶顯示裝置的製造方法
JP6351947B2 (ja) 2012-10-12 2018-07-04 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP6059513B2 (ja) * 2012-11-14 2017-01-11 出光興産株式会社 スパッタリングターゲット、酸化物半導体薄膜及びそれらの製造方法
TWI624949B (zh) 2012-11-30 2018-05-21 半導體能源研究所股份有限公司 半導體裝置
US9326327B2 (en) * 2013-03-15 2016-04-26 Ppg Industries Ohio, Inc. Stack including heater layer and drain layer
KR20150133235A (ko) 2013-03-19 2015-11-27 어플라이드 머티어리얼스, 인코포레이티드 다층 패시베이션 또는 식각 정지 ｔｆｔ
TWI632688B (zh) 2013-07-25 2018-08-11 半導體能源研究所股份有限公司 半導體裝置以及半導體裝置的製造方法
US9337030B2 (en) 2014-03-26 2016-05-10 Intermolecular, Inc. Method to grow in-situ crystalline IGZO using co-sputtering targets
US9459442B2 (en) 2014-09-23 2016-10-04 Scott Miller Optical coupler for optical imaging visualization device
US10548467B2 (en) 2015-06-02 2020-02-04 GI Scientific, LLC Conductive optical element
CA2992739A1 (en) 2015-07-21 2017-01-26 GI Scientific, LLC Endoscope accessory with angularly adjustable exit portal
JP6534123B2 (ja) * 2016-03-23 2019-06-26 日本アイ・ティ・エフ株式会社 被覆膜とその製造方法およびｐｖｄ装置
DE102016118799B4 (de) * 2016-10-05 2022-08-11 VON ARDENNE Asset GmbH & Co. KG Verfahren zum Magnetronsputtern
KR102651759B1 (ko) * 2016-10-11 2024-03-29 삼성디스플레이 주식회사 증착장치
TWI684283B (zh) 2017-06-07 2020-02-01 日商日新電機股份有限公司 薄膜電晶體的製造方法
JP2020200520A (ja) * 2019-06-12 2020-12-17 株式会社アルバック 成膜装置、スパッタリングターゲット機構及び成膜方法
CN117646181A (zh) * 2023-11-17 2024-03-05 中国科学院深圳先进技术研究院 一种半导体封装用二氧化硅薄膜及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968328A (en) * 1996-12-11 1999-10-19 Leybold Systems Gmbh Device for sputter deposition of thin layers on flat substrates
US6362097B1 (en) * 1998-07-14 2002-03-26 Applied Komatsu Technlology, Inc. Collimated sputtering of semiconductor and other films
US20020160554A1 (en) * 2001-02-16 2002-10-31 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
CN1404620A (zh) * 2000-12-18 2003-03-19 Shm公司 蒸发物体涂层材料的装置
CN1407129A (zh) * 2001-08-14 2003-04-02 三星康宁株式会社 在玻璃衬底上淀积薄膜的设备和方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0459763B1 (en) 1990-05-29 1997-05-02 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistors
JP3197557B2 (ja) 1990-11-27 2001-08-13 株式会社半導体エネルギー研究所 被膜形成方法
US5576231A (en) 1993-11-05 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating an insulated gate field effect transistor with an anodic oxidized gate electrode
JP3963961B2 (ja) 1994-08-31 2007-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW334581B (en) 1996-06-04 1998-06-21 Handotai Energy Kenkyusho Kk Semiconductor integrated circuit and fabrication method thereof
DE19726966C1 (de) * 1997-06-25 1999-01-28 Flachglas Ag Verfahren zur Herstellung einer transparenten Silberschicht mit hoher spezifischer elektrischer Leitfähigkeit , Glasscheibe mit einem Dünnschichtsystem mit einer solchen Silberschicht und deren Verwendung
JP2001267311A (ja) * 2000-03-14 2001-09-28 Sanyo Shinku Kogyo Kk Ｔｆｔ用ゲート膜等の成膜方法とその装置
JP3944341B2 (ja) * 2000-03-28 2007-07-11 株式会社東芝 酸化物エピタキシャル歪格子膜の製造法
CN2516564Y (zh) 2001-12-03 2002-10-16 深圳豪威真空光电子股份有限公司 具有中频反应溅射二氧化硅的氧化铟锡玻璃在线联镀装置
DE10159907B4 (de) * 2001-12-06 2008-04-24 Interpane Entwicklungs- Und Beratungsgesellschaft Mbh & Co. Beschichtungsverfahren
US7300829B2 (en) * 2003-06-02 2007-11-27 Applied Materials, Inc. Low temperature process for TFT fabrication
WO2005041311A1 (en) 2003-10-28 2005-05-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same, and liquid crystal television reciever
JP4689159B2 (ja) 2003-10-28 2011-05-25 株式会社半導体エネルギー研究所 液滴吐出システム
JP2005179716A (ja) * 2003-12-17 2005-07-07 Sony Corp スパッタリング装置
JP2007154224A (ja) * 2005-12-01 2007-06-21 Matsushita Electric Ind Co Ltd スパッタリング方法および装置
CN101464530A (zh) * 2008-01-23 2009-06-24 四川大学 一种ZnSe红外增透膜及其制备方法
EP2096189A1 (en) 2008-02-28 2009-09-02 Applied Materials, Inc. Sprayed Si- or Si:Al-target with low iron content
US8057649B2 (en) * 2008-05-06 2011-11-15 Applied Materials, Inc. Microwave rotatable sputtering deposition
WO2009148154A1 (ja) * 2008-06-06 2009-12-10 出光興産株式会社 酸化物薄膜用スパッタリングターゲットおよびその製造法
TWI473896B (zh) * 2008-06-27 2015-02-21 Idemitsu Kosan Co From InGaO 3 (ZnO) crystal phase, and a method for producing the same
US20100236920A1 (en) * 2009-03-20 2010-09-23 Applied Materials, Inc. Deposition apparatus with high temperature rotatable target and method of operating thereof
CN101570853B (zh) * 2009-05-08 2012-05-23 中国科学技术大学 利用磁控溅射制备形貌可控的锌和锌氧化物纳米材料的方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968328A (en) * 1996-12-11 1999-10-19 Leybold Systems Gmbh Device for sputter deposition of thin layers on flat substrates
US6362097B1 (en) * 1998-07-14 2002-03-26 Applied Komatsu Technlology, Inc. Collimated sputtering of semiconductor and other films
CN1404620A (zh) * 2000-12-18 2003-03-19 Shm公司 蒸发物体涂层材料的装置
US20020160554A1 (en) * 2001-02-16 2002-10-31 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
CN1407129A (zh) * 2001-08-14 2003-04-02 三星康宁株式会社 在玻璃衬底上淀积薄膜的设备和方法

Also Published As

Publication number Publication date
KR20130102591A (ko) 2013-09-17
WO2012031962A1 (en) 2012-03-15
US7977255B1 (en) 2011-07-12
TW201214581A (en) 2012-04-01
JP2013539219A (ja) 2013-10-17
EP2428994A1 (en) 2012-03-14
TWI524432B (zh) 2016-03-01
CN103098218A (zh) 2013-05-08

Similar Documents

Publication Publication Date Title
CN103098218B (zh) 沉积薄膜晶体管的方法与系统
JP5288660B2 (ja) クリーニング方法
JP4294305B2 (ja) 成膜装置および成膜方法
TW201402851A (zh) 利用一預穩定電漿之製程的濺鍍方法
TW200830942A (en) Contamination reducing liner for inductively coupled chamber
US20070181421A1 (en) Sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation
TW200951235A (en) Thin film metal oxynitride semiconductors
CN102804397A (zh) 用于微结构受控制的薄膜沉积的离子化物理汽相沉积
CN108300968B (zh) 成膜方法及真空处理装置
JP2001131741A (ja) 触媒スパッタリングによる薄膜形成方法及び薄膜形成装置並びに半導体装置の製造方法
CN110318035A (zh) 合金化合物薄膜的分立式多热丝沉积方法及装置
CN104282567B (zh) 制造igzo层和tft的方法
JPH11168090A (ja) 半導体製造方法
JP2015056529A (ja) 膜形成方法および膜形成装置
TWI649804B (zh) 在通孔或溝槽中沈積層的方法、製造電晶體的方法、用於電子裝置的層堆疊、及電子裝置
JP2011142174A (ja) 成膜方法および半導体装置
WO2010044237A1 (ja) スパッタリング装置、薄膜形成方法及び電界効果型トランジスタの製造方法
CN109072400B (zh) 用于基板的真空处理的方法和用于基板的真空处理的设备
CN103943789A (zh) Oled器件及其制备方法
JPH0524976A (ja) 半導体のドーピング方法及び装置
US5976919A (en) Apparatus and method of manufacturing semiconductor element
KR20110050226A (ko) 평판 표시 소자의 제조 장치
US20240102152A1 (en) Method of depositing layers of a thin-film transistor on a substrate and sputter deposition apparatus
KR20110027537A (ko) 반도체 제조장치
JPH0536620A (ja) 半導体表面処理方法及び装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170412

Termination date: 20200831