CN103098216A - 具有用于定向纳米线生长的缓冲层的衬底 - Google Patents

具有用于定向纳米线生长的缓冲层的衬底 Download PDF

Info

Publication number
CN103098216A
CN103098216A CN2011800310888A CN201180031088A CN103098216A CN 103098216 A CN103098216 A CN 103098216A CN 2011800310888 A CN2011800310888 A CN 2011800310888A CN 201180031088 A CN201180031088 A CN 201180031088A CN 103098216 A CN103098216 A CN 103098216A
Authority
CN
China
Prior art keywords
substrate
buffer layer
sublayers
layer
nanowire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800310888A
Other languages
English (en)
Chinese (zh)
Inventor
约纳斯·奥尔松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GLO AB
Original Assignee
GLO AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GLO AB filed Critical GLO AB
Publication of CN103098216A publication Critical patent/CN103098216A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3206—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3256—Microstructure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3462—Nanowires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Materials Engineering (AREA)
CN2011800310888A 2010-06-24 2011-06-27 具有用于定向纳米线生长的缓冲层的衬底 Pending CN103098216A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE1050700-2 2010-06-24
SE1050700 2010-06-24
PCT/SE2011/050845 WO2011162715A1 (en) 2010-06-24 2011-06-27 Substrate with buffer layer for oriented nanowire growth

Publications (1)

Publication Number Publication Date
CN103098216A true CN103098216A (zh) 2013-05-08

Family

ID=45371681

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800310888A Pending CN103098216A (zh) 2010-06-24 2011-06-27 具有用于定向纳米线生长的缓冲层的衬底

Country Status (9)

Country Link
US (1) US9947829B2 (https=)
EP (1) EP2586062A4 (https=)
JP (1) JP5981426B2 (https=)
KR (1) KR20130138657A (https=)
CN (1) CN103098216A (https=)
AU (1) AU2011269874B2 (https=)
CA (1) CA2802500A1 (https=)
SG (1) SG186312A1 (https=)
WO (1) WO2011162715A1 (https=)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105280773A (zh) * 2014-07-21 2016-01-27 三星电子株式会社 半导体发光器件
CN106415856A (zh) * 2014-04-22 2017-02-15 原子能及能源替代委员会 具有改善的光提取效率的光电子器件
CN107210191A (zh) * 2014-12-05 2017-09-26 原子能及能源替代委员会 具有从包括碳化锆或碳化铪的导电层延伸的导线元件的电子器件
CN108028182A (zh) * 2015-09-15 2018-05-11 慕尼黑科技大学 用于制造纳米结构的方法
CN108292694A (zh) * 2015-07-13 2018-07-17 科莱约纳诺公司 纳米线/纳米锥形状的发光二极管及光检测器
CN108604538A (zh) * 2015-12-14 2018-09-28 奥斯坦多科技公司 用于生产复合GaN纳米柱的方法及由该方法制成的发光结构
CN110190162A (zh) * 2019-06-04 2019-08-30 深圳扑浪创新科技有限公司 一种led芯片的外延结构及其制备方法
CN110249491A (zh) * 2017-02-03 2019-09-17 挪威科技大学 基于在石墨烯型基底上生长的纳米线的激光器或led
CN114521296A (zh) * 2019-07-19 2022-05-20 谢菲尔德大学 发光二极管阵列
CN114730704A (zh) * 2019-09-23 2022-07-08 科莱约纳诺公司 物质组合物
CN116804269A (zh) * 2023-05-10 2023-09-26 南京大学 一种纳米线阵列、生长方法及热电器件
US12426426B2 (en) 2019-07-19 2025-09-23 Snap Inc. Arrays of LED structures extending through holes in a dielectric layer and independently activated
US12446385B2 (en) 2023-11-03 2025-10-14 Snap Inc. Monolithic RGB microLED array

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201021112D0 (en) 2010-12-13 2011-01-26 Ntnu Technology Transfer As Nanowires
US9202945B2 (en) * 2011-12-23 2015-12-01 Nokia Technologies Oy Graphene-based MIM diode and associated methods
GB201200355D0 (en) * 2012-01-10 2012-02-22 Norwegian Univ Sci & Tech Ntnu Nanowires
CN103374751B (zh) * 2012-04-25 2016-06-15 清华大学 具有微构造的外延结构体的制备方法
GB201211038D0 (en) 2012-06-21 2012-08-01 Norwegian Univ Sci & Tech Ntnu Solar cells
DE102012109594A1 (de) 2012-10-09 2014-04-10 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
KR20150103661A (ko) 2012-10-26 2015-09-11 글로 에이비 나노와이어 led 구조 및 이를 제조하는 방법
FR2997557B1 (fr) 2012-10-26 2016-01-01 Commissariat Energie Atomique Dispositif electronique a nanofil(s) muni d'une couche tampon en metal de transition, procede de croissance d'au moins un nanofil, et procede de fabrication d'un dispositif
EP2912699B1 (en) 2012-10-26 2019-12-18 Glo Ab Method for modifying selected portions of nanowire sized opto-electronic structure
JP6322197B2 (ja) 2012-10-26 2018-05-09 グロ アーベーＧｌｏ Ａｂ ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。
FR2997420B1 (fr) * 2012-10-26 2017-02-24 Commissariat Energie Atomique Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes
KR101603207B1 (ko) * 2013-01-29 2016-03-14 삼성전자주식회사 나노구조 반도체 발광소자 제조방법
DE102013009824A1 (de) * 2013-06-11 2014-12-11 Forschungsverbund Berlin E.V. Halbleitervorrichtung mit Nanosäulen aus Gruppe III-Nitridmaterial und Herstellungsverfahren für eine solche Halbleitervorrichtung
TW201515269A (zh) 2013-06-18 2015-04-16 Glo公司 用於平整化及界定奈米線裝置之活化區的絕緣層
GB201311101D0 (en) 2013-06-21 2013-08-07 Norwegian Univ Sci & Tech Ntnu Semiconducting Films
FR3007574B1 (fr) 2013-06-21 2015-07-17 Commissariat Energie Atomique Procede de fabrication d'une structure semiconductrice et composant semiconducteur comportant une telle structure semiconductrice
US8999737B2 (en) 2013-08-27 2015-04-07 Glo Ab Method of making molded LED package
US9257616B2 (en) 2013-08-27 2016-02-09 Glo Ab Molded LED package and method of making same
US9142745B2 (en) 2013-08-27 2015-09-22 Glo Ab Packaged LED device with castellations
WO2015089123A1 (en) 2013-12-13 2015-06-18 Glo Ab Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire leds
US9281442B2 (en) 2013-12-17 2016-03-08 Glo Ab III-nitride nanowire LED with strain modified surface active region and method of making thereof
KR102285786B1 (ko) 2014-01-20 2021-08-04 삼성전자 주식회사 반도체 발광 소자
KR102198694B1 (ko) 2014-07-11 2021-01-06 삼성전자주식회사 반도체 발광소자 및 반도체 발광소자 제조방법
WO2016025325A1 (en) * 2014-08-12 2016-02-18 Glo Ab Iii-nitride nanowire led with strain modified surface active region and method of making thereof
KR102164796B1 (ko) * 2014-08-28 2020-10-14 삼성전자주식회사 나노구조 반도체 발광소자
KR102337405B1 (ko) 2014-09-05 2021-12-13 삼성전자주식회사 나노구조 반도체 발광소자
KR102266615B1 (ko) 2014-11-17 2021-06-21 삼성전자주식회사 전계 효과 트랜지스터를 포함하는 반도체 소자 및 그 제조 방법
KR102237149B1 (ko) * 2014-11-18 2021-04-07 엘지이노텍 주식회사 발광소자 및 조명시스템
EA201890168A1 (ru) 2015-07-13 2018-08-31 Крайонано Ас Нанопроволока или нанопирамидки, выращенные на графитовой подложке
CA2993884A1 (en) * 2015-07-31 2017-02-09 Crayonano As Process for growing nanowires or nanopyramids on graphitic substrates
FR3053054B1 (fr) 2016-06-28 2021-04-02 Commissariat Energie Atomique Structure de nucleation adaptee a la croissance epitaxiale d’elements semiconducteurs tridimensionnels
US10480719B2 (en) * 2016-08-16 2019-11-19 King Abdullah University Of Science And Technology Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications
GB201705755D0 (en) 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure
US10418499B2 (en) 2017-06-01 2019-09-17 Glo Ab Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof
US10707374B2 (en) 2017-09-15 2020-07-07 Glo Ab Etendue enhancement for light emitting diode subpixels
KR102701758B1 (ko) * 2018-11-27 2024-09-04 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 발광 소자를 구비한 표시 장치
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
FR3096834B1 (fr) * 2019-05-28 2022-11-25 Aledia Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite
CN110676283B (zh) * 2019-10-16 2022-03-25 福州大学 一种基于纳米线的μLED显示设计方法
KR102221285B1 (ko) * 2019-12-09 2021-03-03 한양대학교 산학협력단 이산화티타늄 나노막대의 성장방법
JP7779906B2 (ja) * 2021-04-16 2025-12-03 京セラ株式会社 半導体基板並びにその製造方法および製造装置、ＧａＮ系結晶体、半導体デバイス、電子機器
JP2023094009A (ja) * 2021-12-23 2023-07-05 セイコーエプソン株式会社 発光装置、プロジェクター、およびディスプレイ
CN115842077B (zh) * 2023-02-10 2023-04-28 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080036038A1 (en) * 2006-03-10 2008-02-14 Hersee Stephen D PULSED GROWTH OF CATALYST-FREE GROWITH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL
WO2008085129A1 (en) * 2007-01-12 2008-07-17 Qunano Ab Nitride nanowires and method of producing such
US20080191191A1 (en) * 2005-06-27 2008-08-14 Seoul Opto Device Co., Ltd. Light Emitting Diode of a Nanorod Array Structure Having a Nitride-Based Multi Quantum Well

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6046465A (en) * 1998-04-17 2000-04-04 Hewlett-Packard Company Buried reflectors for light emitters in epitaxial material and method for producing same
JP4613373B2 (ja) * 1999-07-19 2011-01-19 ソニー株式会社 Ｉｉｉ族ナイトライド化合物半導体薄膜の形成方法および半導体素子の製造方法
US6599564B1 (en) * 2000-08-09 2003-07-29 The Board Of Trustees Of The University Of Illinois Substrate independent distributed bragg reflector and formation method
US6649287B2 (en) 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US6523188B1 (en) 2002-01-14 2003-02-25 Kiefer Pool Equipment Co. Top for starting platform for swimming pool
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
US6818061B2 (en) 2003-04-10 2004-11-16 Honeywell International, Inc. Method for growing single crystal GaN on silicon
JP3821232B2 (ja) * 2003-04-15 2006-09-13 日立電線株式会社 エピタキシャル成長用多孔質基板およびその製造方法ならびにｉｉｉ族窒化物半導体基板の製造方法
JP2006237556A (ja) * 2005-01-31 2006-09-07 Kanagawa Acad Of Sci & Technol ＧａＮ膜生成方法及び半導体素子並びにＩＩＩ族窒化物の薄膜生成方法及びＩＩＩ族窒化物の薄膜を有する半導体素子
US7365374B2 (en) 2005-05-03 2008-04-29 Nitronex Corporation Gallium nitride material structures including substrates and methods associated with the same
KR100753152B1 (ko) * 2005-08-12 2007-08-30 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
WO2007049939A1 (en) * 2005-10-29 2007-05-03 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US20070257264A1 (en) 2005-11-10 2007-11-08 Hersee Stephen D CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS
TWI408264B (zh) * 2005-12-15 2013-09-11 聖戈班晶體探測器公司 低差排密度氮化鎵（ＧａＮ）之生長方法
SG10201405004WA (en) * 2006-02-23 2014-10-30 Azzurro Semiconductors Ag Nitride semiconductor component and process for its production
CN101443265B (zh) 2006-03-08 2014-03-26 昆南诺股份有限公司 在硅上无金属合成外延半导体纳米线的方法
GB0702560D0 (en) * 2007-02-09 2007-03-21 Univ Bath Production of Semiconductor devices
WO2009096932A1 (en) 2008-01-28 2009-08-06 Amit Goyal [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices
KR101515100B1 (ko) * 2008-10-21 2015-04-24 삼성전자주식회사 발광 다이오드 및 그 제조 방법
US8097999B2 (en) * 2009-04-27 2012-01-17 University Of Seoul Industry Cooperation Foundation Piezoelectric actuator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080191191A1 (en) * 2005-06-27 2008-08-14 Seoul Opto Device Co., Ltd. Light Emitting Diode of a Nanorod Array Structure Having a Nitride-Based Multi Quantum Well
US20080036038A1 (en) * 2006-03-10 2008-02-14 Hersee Stephen D PULSED GROWTH OF CATALYST-FREE GROWITH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL
WO2008085129A1 (en) * 2007-01-12 2008-07-17 Qunano Ab Nitride nanowires and method of producing such

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106415856B (zh) * 2014-04-22 2019-06-14 原子能及能源替代委员会 具有改善的光提取效率的光电子器件
CN106415856A (zh) * 2014-04-22 2017-02-15 原子能及能源替代委员会 具有改善的光提取效率的光电子器件
CN105280773A (zh) * 2014-07-21 2016-01-27 三星电子株式会社 半导体发光器件
CN107210191A (zh) * 2014-12-05 2017-09-26 原子能及能源替代委员会 具有从包括碳化锆或碳化铪的导电层延伸的导线元件的电子器件
CN107210191B (zh) * 2014-12-05 2021-09-21 原子能及能源替代委员会 具有从包括碳化锆或碳化铪的导电层延伸的导线元件的电子器件
CN108292694A (zh) * 2015-07-13 2018-07-17 科莱约纳诺公司 纳米线/纳米锥形状的发光二极管及光检测器
CN108028182B (zh) * 2015-09-15 2023-01-10 慕尼黑科技大学 用于制造纳米结构的方法
CN108028182A (zh) * 2015-09-15 2018-05-11 慕尼黑科技大学 用于制造纳米结构的方法
CN108604538A (zh) * 2015-12-14 2018-09-28 奥斯坦多科技公司 用于生产复合GaN纳米柱的方法及由该方法制成的发光结构
CN110249491A (zh) * 2017-02-03 2019-09-17 挪威科技大学 基于在石墨烯型基底上生长的纳米线的激光器或led
CN110249491B (zh) * 2017-02-03 2023-08-08 挪威科技大学 基于在石墨烯型基底上生长的纳米线的激光器或led
CN110190162A (zh) * 2019-06-04 2019-08-30 深圳扑浪创新科技有限公司 一种led芯片的外延结构及其制备方法
CN114521296A (zh) * 2019-07-19 2022-05-20 谢菲尔德大学 发光二极管阵列
US12426426B2 (en) 2019-07-19 2025-09-23 Snap Inc. Arrays of LED structures extending through holes in a dielectric layer and independently activated
CN114730704A (zh) * 2019-09-23 2022-07-08 科莱约纳诺公司 物质组合物
CN116804269A (zh) * 2023-05-10 2023-09-26 南京大学 一种纳米线阵列、生长方法及热电器件
US12446385B2 (en) 2023-11-03 2025-10-14 Snap Inc. Monolithic RGB microLED array

Also Published As

Publication number Publication date
US20130221322A1 (en) 2013-08-29
EP2586062A4 (en) 2015-06-03
WO2011162715A9 (en) 2012-11-22
AU2011269874A1 (en) 2013-01-10
SG186312A1 (en) 2013-02-28
US9947829B2 (en) 2018-04-17
KR20130138657A (ko) 2013-12-19
AU2011269874B2 (en) 2015-03-26
JP5981426B2 (ja) 2016-08-31
WO2011162715A1 (en) 2011-12-29
JP2013532621A (ja) 2013-08-19
EP2586062A1 (en) 2013-05-01
CA2802500A1 (en) 2011-12-29

Similar Documents

Publication Publication Date Title
CN103098216A (zh) 具有用于定向纳米线生长的缓冲层的衬底
JP6486519B2 (ja) ナノワイヤサイズの光電構造及びその選択された部分を改質する方法
KR101834785B1 (ko) 합성물 반도체 층을 포함하는 이종 접합 구조
AU2016302692B2 (en) Process for growing nanowires or nanopyramids on graphitic substrates
JP6382206B2 (ja) 光電子デバイスを製造する方法
US7999272B2 (en) Semiconductor light emitting device having patterned substrate
US20060223211A1 (en) Semiconductor devices based on coalesced nano-rod arrays
JP2013532621A5 (https=)
TW201020206A (en) Defect-free group III-nitride nanostructures and devices using pulsed and non-pulsed growth techniques
JP5059130B2 (ja) ヘテロ結晶半導体デバイス及びその製造方法
CN102683525A (zh) 外延生长缺陷控制结构、包含缺陷控制结构的发光器件及其制造方法
KR20220068218A (ko) 나노와이어 소자
CN105917444A (zh) 半导体器件及制造方法
CN1965112B (zh) Iii族氮化物晶体、其制造方法以及iii族氮化物晶体衬底及半导体器件
US8350278B2 (en) Nitride semiconductor light-emitting device
US20100105159A1 (en) Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same
JP2008244319A (ja) 窒化ガリウム系エピタキシャルウエハ、および窒化ガリウム系半導体発光素子を作製する方法
WO2016083704A1 (fr) Dispositif optoélectronique á éléments semiconducteurs tridimensionnels et son procédé de fabrication
KR100943092B1 (ko) 질화물 반도체 발광다이오드 및 이의 제조방법
CN105679903B (zh) 一种半极性led外延结构及其制备方法
JP6232611B2 (ja) 発光素子およびその製造方法
TW202147640A (zh) 光電子器件及其製造方法
HK1181191A (en) Substrate with buffer layer for oriented nanowire growth
JP2012049447A (ja) 半導体基板の製造方法および発光素子
JP7849053B2 (ja) アキシャル３次元発光ダイオードを有する光電子デバイス

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1181191

Country of ref document: HK

C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130508

REG Reference to a national code

Ref country code: HK

Ref legal event code: WD

Ref document number: 1181191

Country of ref document: HK