JP6382206B2 - 光電子デバイスを製造する方法 - Google Patents
光電子デバイスを製造する方法 Download PDFInfo
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- JP6382206B2 JP6382206B2 JP2015538536A JP2015538536A JP6382206B2 JP 6382206 B2 JP6382206 B2 JP 6382206B2 JP 2015538536 A JP2015538536 A JP 2015538536A JP 2015538536 A JP2015538536 A JP 2015538536A JP 6382206 B2 JP6382206 B2 JP 6382206B2
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- 230000005693 optoelectronics Effects 0.000 title claims description 59
- 238000000034 method Methods 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims description 86
- 239000000463 material Substances 0.000 claims description 79
- 239000004065 semiconductor Substances 0.000 claims description 57
- 150000001875 compounds Chemical class 0.000 claims description 56
- 239000002070 nanowire Substances 0.000 claims description 43
- 238000005530 etching Methods 0.000 claims description 32
- -1 hafnium nitride Chemical class 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 11
- 239000011777 magnesium Substances 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 238000005121 nitriding Methods 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims 2
- 239000010410 layer Substances 0.000 description 143
- 239000003989 dielectric material Substances 0.000 description 30
- 238000010586 diagram Methods 0.000 description 23
- 238000010924 continuous production Methods 0.000 description 19
- 230000005670 electromagnetic radiation Effects 0.000 description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 239000002243 precursor Substances 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229910021478 group 5 element Inorganic materials 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000003877 atomic layer epitaxy Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 4
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910018503 SF6 Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 229910021476 group 6 element Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 3
- 229960000909 sulfur hexafluoride Drugs 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000002848 electrochemical method Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- ZGNPLWZYVAFUNZ-UHFFFAOYSA-N tert-butylphosphane Chemical compound CC(C)(C)P ZGNPLWZYVAFUNZ-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- CVOFKRWYWCSDMA-UHFFFAOYSA-N 2-chloro-n-(2,6-diethylphenyl)-n-(methoxymethyl)acetamide;2,6-dinitro-n,n-dipropyl-4-(trifluoromethyl)aniline Chemical compound CCC1=CC=CC(CC)=C1N(COC)C(=O)CCl.CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O CVOFKRWYWCSDMA-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910003363 ZnMgO Inorganic materials 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910001849 group 12 element Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000008263 liquid aerosol Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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Description
基板と、
該基板の表面に設けられている複数のパッドと、
該パッドの各々に載置されている半導体要素と、
各パッドの少なくとも側部を覆い、該側部での前記半導体要素の成長を防ぐ部分と
を備えていることを特徴とする光電子デバイスを提供する。
基板を準備する工程、
該基板の表面に複数のパッドを形成する工程、
各パッドの少なくとも側部を覆う部分であって、該側部での半導体要素の成長を防ぐ材料を含有する前記部分を形成する工程、及び
前記パッドに夫々載置される前記半導体要素を形成する工程
を連続的に有することを特徴とする方法を更に提供する。
前記基板及び前記パッド上に第1の誘電材料の第1の誘電体層を成膜して、該第1の誘電体層により前記パッド上にバンプを形成する工程、
前記第1の誘電体層上に、前記第1の誘電材料とは異なる第2の誘電材料の第2の誘電体層を成膜する工程、
該第2の誘電体層を化学機械研磨によって除去して前記第1の誘電体層のバンプを露出させる工程、及び
前記第1の誘電体層及び前記第2の誘電体層の残り部分をエッチングして、前記パッドの最上部を露出させる工程
を有する。
前記基板上に層を成膜する工程、
該層上に絶縁ブロックを形成する工程、
該絶縁ブロックで覆われていない前記層の部分をエッチングして前記パッドを形成する工程、
前記パッドの側部及び前記パッドで覆われていない前記基板の部分を酸化する工程、及び
前記絶縁ブロックを除去する工程
を連続的に有する。
前記基板上に層を成膜する工程、
該層上に絶縁ブロックを形成する工程、
前記絶縁ブロックで覆われていない前記層の部分をエッチングして前記パッドを形成する工程、
前記絶縁ブロックを除去する工程、
前記パッドと該パッド間の前記基板とを覆う誘電体層を成膜する工程、
該誘電体層を異方的にエッチングして前記基板と前記パッドの最上部とから前記誘電体層を除去し、前記側部に前記誘電体層の部分を残す工程、及び
前記パッドで覆われていない前記基板の部分、及び場合によっては前記パッドの最上部を窒化する工程
を連続的に有する。
(ii) 開口部4 内でワイヤの成長を促す材料の部分6 を成長させる(図1B)。
(iii) 夫々の部分6 上にワイヤ7 を成長させる(図1C)。
第1のバイアス電極12と、
第1のバイアス電極12に接する表面15及び表面15に対向する表面16を有する基板(例えば半導体基板)14と、
ワイヤの成長を促して表面16に配置された複数のシードアイランド18であって、基板14の表面16に接する下面19、下面19から距離を隔てて下面19に対向する上面20、及び下面19を上面20に繋ぐ側面21、すなわち側部を夫々有する複数のシードアイランド18と、
基板14の深さの一部に亘って表面16から各対のアイランド18間に延びる基板14内の誘電性領域22であって、基板の変質によって生じる誘電体から形成され、そのため下にある基板を保護してワイヤの成長を防ぐ誘電性領域22と、
ワイヤの成長に適さない材料から形成されて側面21を覆い、各アイランド18を囲んでワイヤの成長を防ぐ保護部分23と、
複数のアイランド18の内の1つの上面20に夫々接する高さH1の複数のワイヤ24(3つのワイヤが図示されている)であって、アイランド18に接する高さH2の下側部分26及び下側部分26に接する高さH3の上側部分28を夫々有する複数のワイヤ24と、
夫々の下側部分26の周囲を覆うパッシベーション層29と、
夫々の上側部分28を覆う活性層30と、
夫々の活性層30を覆う一又は複数の半導体層32と、
少なくとも高さH2に沿って夫々のワイヤ24間の表面16及び各ワイヤ24を覆う絶縁部分34と、
ワイヤ24間の絶縁部分34を覆う反射部分36と、
半導体層32及び絶縁部分34を覆う第2の電極層38と
を備えている。
Claims (12)
- 光電子デバイスを製造する方法であって、
基板を準備する工程、
前記基板上に層を成膜する工程、
該層上に絶縁ブロックを形成する工程、
該絶縁ブロックで覆われていない前記層の部分をエッチングして前記基板の表面に複数のパッドを、窒化アルミニウム、ホウ素、窒化ホウ素、チタン、窒化チタン、タンタル、窒化タンタル、ハフニウム、窒化ハフニウム、ニオブ、窒化ニオブ、ジルコニウム、ホウ化ジルコニウム、窒化ジルコニウム、炭化珪素、タンタル炭窒化物、窒化マグネシウム、窒化ガリウムマグネシウム、タングステン、窒化タングステン、白金、窒化白金、又はこれら及びこれらの窒化化合物の組み合わせから形成する工程、
前記パッドの側部及び前記パッドで覆われていない前記基板の部分の酸化又は窒化によって、誘電性領域を画定する各パッドの少なくとも側部を覆う前記光電子デバイスの部分を形成する工程、
前記絶縁ブロックを除去する工程、及び
前記パッドに夫々載置される半導体要素を形成する工程
を連続的に有し、
前記誘電性領域は、前記側部での前記半導体要素の成長を防ぐ材料を含有することを特徴とする方法。 - 前記基板を、珪素、ゲルマニウム、炭化珪素、III-V 族化合物、II-VI 族化合物及びこれらの化合物の組み合わせを含む群から選択された第1の半導体材料から形成することを特徴とする請求項1に記載の方法。
- 各半導体要素は、前記パッドの内の1つに接する第2の半導体材料を主に含有する少なくとも一部を有しており、
前記第2の半導体材料を、珪素、ゲルマニウム、炭化珪素、III-V 族化合物、II-VI 族化合物及びこれらの化合物の組み合わせを含む群から選択することを特徴とする請求項2に記載の方法。 - 各パッドの厚さは1nm〜100 nmの範囲内であり、
前記基板は各パッドと電気的に接していることを特徴とする請求項1乃至3のいずれか一項に記載の方法。 - 各半導体要素は、マイクロワイヤ、ナノワイヤ、円錐状要素又はテーパ状要素であることを特徴とする請求項1乃至4のいずれか一項に記載の方法。
- 前記光電子デバイスの部分は絶縁材料から形成されていることを特徴とする請求項1乃至5のいずれか一項に記載の方法。
- 光電子デバイスを製造する方法であって、
基板を準備する工程、
前記基板上に層を成膜する工程、
該層上に絶縁ブロックを形成する工程、
該絶縁ブロックで覆われていない前記層の部分をエッチングして前記基板の表面に複数のパッドを、窒化アルミニウム、ホウ素、窒化ホウ素、チタン、窒化チタン、タンタル、窒化タンタル、ハフニウム、窒化ハフニウム、ニオブ、窒化ニオブ、ジルコニウム、ホウ化ジルコニウム、窒化ジルコニウム、炭化珪素、タンタル炭窒化物、窒化マグネシウム、窒化ガリウムマグネシウム、タングステン、窒化タングステン、白金、窒化白金、又はこれら及びこれらの窒化化合物の組み合わせから形成する工程、
前記絶縁ブロックを除去する工程、
前記パッドと該パッド間の前記基板とを覆う誘電体層を成膜し、
該誘電体層を異方的にエッチングして前記基板と前記パッドの最上部とから前記誘電体層を除去し、前記パッドの側部に前記誘電体層の部分を残し、
前記パッドで覆われていない前記基板の部分を窒化する
ことにより、誘電性領域を画定する各パッドの少なくとも側部を覆う前記光電子デバイスの部分を形成する工程、及び
前記パッドに夫々載置される半導体要素を形成する工程
を連続的に有し
前記誘電性領域は、前記側部での前記半導体要素の成長を防ぐ材料を含有することを特徴とする方法。 - 前記基板を、珪素、ゲルマニウム、炭化珪素、III-V 族化合物、II-VI 族化合物及びこれらの化合物の組み合わせを含む群から選択された第1の半導体材料から形成することを特徴とする請求項7に記載の方法。
- 各半導体要素は、前記パッドの内の1つに接する第2の半導体材料を主に含有する少なくとも一部を有しており、
前記第2の半導体材料を、珪素、ゲルマニウム、炭化珪素、III-V 族化合物、II-VI 族化合物及びこれらの化合物の組み合わせを含む群から選択することを特徴とする請求項8に記載の方法。 - 各パッドの厚さは1nm〜100 nmの範囲内であり、
前記基板は各パッドと電気的に接していることを特徴とする請求項7乃至9のいずれか一項に記載の方法。 - 各半導体要素は、マイクロワイヤ、ナノワイヤ、円錐状要素又はテーパ状要素であることを特徴とする請求項7乃至10のいずれか一項に記載の方法。
- 前記光電子デバイスの部分は絶縁材料から形成されていることを特徴とする請求項7乃至11のいずれか一項に記載の方法。
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Also Published As
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FR2997558B1 (fr) | 2015-12-18 |
EP2911974B1 (fr) | 2016-08-31 |
FR2997558A1 (fr) | 2014-05-02 |
JP2015536565A (ja) | 2015-12-21 |
CN104918878B (zh) | 2018-05-01 |
KR20150088785A (ko) | 2015-08-03 |
BR112015008543B1 (pt) | 2021-01-26 |
CN104918878A (zh) | 2015-09-16 |
FR2997552B1 (fr) | 2016-08-26 |
US20160111593A1 (en) | 2016-04-21 |
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