BR112015008543A2 - dispositivo optoeletrônico e o respectivo processo de fabricação - Google Patents
dispositivo optoeletrônico e o respectivo processo de fabricaçãoInfo
- Publication number
- BR112015008543A2 BR112015008543A2 BR112015008543A BR112015008543A BR112015008543A2 BR 112015008543 A2 BR112015008543 A2 BR 112015008543A2 BR 112015008543 A BR112015008543 A BR 112015008543A BR 112015008543 A BR112015008543 A BR 112015008543A BR 112015008543 A2 BR112015008543 A2 BR 112015008543A2
- Authority
- BR
- Brazil
- Prior art keywords
- optoelectronic device
- manufacturing process
- substrate
- cables
- cable
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000000284 resting effect Effects 0.000 abstract 1
Classifications
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Device Packages (AREA)
Abstract
resumo patente de invenção: “dispositivo optoeletrônico e o respectivo processo de fabricação”. a invenção se refere a um dispositivo optoeletrônico (10), compreendendo um substrato (14), cabos (18) sobre uma face (16) do substrato, elementos semicondutores (24), cada elemento apoiando-se sobre um cabo, uma porção (23) que recobre pelo menos os flancos laterais (21) de cada cabo, essa porção impedindo o aumento dos elementos semicondutores sobre os flancos laterais, e uma região (22) dielétrica que se estende no substrato a partir dessa face e ligando, para cada par de cabos, um dos cabos do par ao outro cabo do par.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1260232 | 2012-10-26 | ||
FR1260232A FR2997558B1 (fr) | 2012-10-26 | 2012-10-26 | Dispositif opto-electrique et son procede de fabrication |
FR1352794A FR2997552B1 (fr) | 2012-10-26 | 2013-03-28 | Dispositif optoelectronique et son procede de fabrication |
FR1352794 | 2013-03-28 | ||
PCT/FR2013/052551 WO2014064395A1 (fr) | 2012-10-26 | 2013-10-25 | Dispositif optoelectronique et son procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
BR112015008543A2 true BR112015008543A2 (pt) | 2017-07-04 |
BR112015008543B1 BR112015008543B1 (pt) | 2021-01-26 |
Family
ID=47598919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112015008543-1A BR112015008543B1 (pt) | 2012-10-26 | 2013-10-25 | dispositivo optoeletrônico e o respectivo processo de fabricação |
Country Status (8)
Country | Link |
---|---|
US (2) | US9331242B2 (pt) |
EP (1) | EP2911974B1 (pt) |
JP (1) | JP6382206B2 (pt) |
KR (1) | KR102140315B1 (pt) |
CN (1) | CN104918878B (pt) |
BR (1) | BR112015008543B1 (pt) |
FR (2) | FR2997558B1 (pt) |
WO (1) | WO2014064395A1 (pt) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201021112D0 (en) | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
GB201211038D0 (en) | 2012-06-21 | 2012-08-01 | Norwegian Univ Sci & Tech Ntnu | Solar cells |
GB201311101D0 (en) | 2013-06-21 | 2013-08-07 | Norwegian Univ Sci & Tech Ntnu | Semiconducting Films |
FR3023066B1 (fr) * | 2014-06-30 | 2017-10-27 | Aledia | Dispositif optoelectronique comprenant des diodes electroluminescentes et un circuit de commande |
FR3026564B1 (fr) | 2014-09-30 | 2018-02-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique a elements semiconducteurs tridimensionnels |
KR102282137B1 (ko) * | 2014-11-25 | 2021-07-28 | 삼성전자주식회사 | 반도체 발광소자 및 이를 구비한 반도체 발광장치 |
FR3029683B1 (fr) * | 2014-12-05 | 2017-01-13 | Commissariat Energie Atomique | Dispositif electronique a element filaire s'etendant a partir d'une couche electriquement conductrice comportant du carbure de zirconium ou du carbure de hafnium |
FR3031242B1 (fr) * | 2014-12-29 | 2016-12-30 | Aledia | Procede de fabrication de nanofils ou de microfils semiconducteurs a pieds isoles |
AU2016292849B2 (en) | 2015-07-13 | 2019-05-16 | Crayonano As | Nanowires/nanopyramids shaped light emitting diodes and photodetectors |
AU2016292850B2 (en) | 2015-07-13 | 2019-05-16 | Crayonano As | Nanowires or nanopyramids grown on graphitic substrate |
TWI711072B (zh) * | 2015-07-31 | 2020-11-21 | 挪威商卡亞奈米公司 | 生長奈米線或奈米角錐體之方法 |
FR3053054B1 (fr) * | 2016-06-28 | 2021-04-02 | Commissariat Energie Atomique | Structure de nucleation adaptee a la croissance epitaxiale d’elements semiconducteurs tridimensionnels |
FR3056825B1 (fr) | 2016-09-29 | 2019-04-26 | Soitec | Structure comprenant des ilots semi-conducteurs monocristallins, procede de fabrication d'une telle structure |
GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
CN107331742B (zh) * | 2017-07-20 | 2019-02-22 | 厦门乾照光电股份有限公司 | 一种发光二极管外延结构及其制作方法、发光二极管 |
US20190058082A1 (en) * | 2017-08-16 | 2019-02-21 | Globalfoundries Inc. | Uniform semiconductor nanowire and nanosheet light emitting diodes |
FR3082094B1 (fr) | 2018-06-01 | 2022-09-30 | Aledia | Circuit optoelectrique comprenant des diodes electroluminescentes |
FR3082663B1 (fr) | 2018-06-14 | 2022-01-07 | Aledia | Dispositif optoelectronique |
FR3087579B1 (fr) * | 2018-10-22 | 2022-08-12 | Aledia | Dispositif optoelectronique a diodes electroluminescentes a extraction de lumiere amelioree |
FR3087936B1 (fr) | 2018-10-24 | 2022-07-15 | Aledia | Dispositif electronique |
FR3096834B1 (fr) * | 2019-05-28 | 2022-11-25 | Aledia | Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite |
FR3103828B1 (fr) * | 2019-12-02 | 2023-12-22 | Commissariat Energie Atomique | Dispositif comprenant des nanofils |
FR3103829B1 (fr) * | 2019-12-02 | 2023-06-30 | Commissariat Energie Atomique | Formation de nanofils |
CN111128689B (zh) * | 2019-12-31 | 2023-03-10 | 广东省半导体产业技术研究院 | 极性控制方法、氮化物薄膜制备方法和氮化物薄膜 |
FR3118292A1 (fr) | 2020-12-17 | 2022-06-24 | Aledia | Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial |
FR3118291B1 (fr) | 2020-12-17 | 2023-04-14 | Aledia | Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial |
FR3118289A1 (fr) | 2020-12-17 | 2022-06-24 | Aledia | Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial |
US11626532B2 (en) | 2021-01-06 | 2023-04-11 | Applied Materials, Inc. | Methods and apparatus for forming light emitting diodes |
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FR1352794A (fr) | 1964-05-25 | Direction à absorption de choc | ||
FR1260232A (fr) | 1959-04-09 | 1961-05-05 | Onderzoekings Inst Res | Procédé pour l'étirage complémentaire de fils en cellulose régénérée destinés à la confection de bandages, et fils obtenus par cet étirage complémentaire |
JP3882539B2 (ja) * | 2000-07-18 | 2007-02-21 | ソニー株式会社 | 半導体発光素子およびその製造方法、並びに画像表示装置 |
JP2007525830A (ja) * | 2003-12-22 | 2007-09-06 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体ナノワイヤ群の製作及びナノワイヤ群を備える電子デバイス |
US7846820B2 (en) * | 2004-04-27 | 2010-12-07 | Panasonic Corporation | Nitride semiconductor device and process for producing the same |
US7067400B2 (en) | 2004-09-17 | 2006-06-27 | International Business Machines Corporation | Method for preventing sidewall consumption during oxidation of SGOI islands |
JP2006278368A (ja) * | 2005-03-28 | 2006-10-12 | Sony Corp | 光源装置および表示装置 |
WO2008048704A2 (en) * | 2006-03-10 | 2008-04-24 | Stc.Unm | Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices |
US20080187018A1 (en) * | 2006-10-19 | 2008-08-07 | Amberwave Systems Corporation | Distributed feedback lasers formed via aspect ratio trapping |
US8227817B2 (en) * | 2006-12-22 | 2012-07-24 | Qunano Ab | Elevated LED |
US7829443B2 (en) | 2007-01-12 | 2010-11-09 | Qunano Ab | Nitride nanowires and method of producing such |
WO2008149548A1 (ja) * | 2007-06-06 | 2008-12-11 | Panasonic Corporation | 半導体ナノワイヤおよびその製造方法 |
EP2171748A1 (en) * | 2007-07-26 | 2010-04-07 | S.O.I.Tec Silicon on Insulator Technologies | Epitaxial methods and templates grown by the methods |
WO2009072631A1 (ja) * | 2007-12-05 | 2009-06-11 | Rohm Co., Ltd. | 窒化物半導体素子の製造方法および窒化物半導体素子 |
FR2925979A1 (fr) | 2007-12-27 | 2009-07-03 | Commissariat Energie Atomique | PROCEDE DE FABRICATION D'UN SUBSTRAT SEMICONDUCTEUR SUR ISOLANT COMPRENANT UNE ETAPE D'ENRICHISSEMENT EN Ge LOCALISE |
JP5145120B2 (ja) * | 2008-05-26 | 2013-02-13 | パナソニック株式会社 | 化合物半導体発光素子およびそれを用いる照明装置ならびに化合物半導体発光素子の製造方法 |
KR101496151B1 (ko) * | 2008-06-25 | 2015-02-27 | 삼성전자주식회사 | 산화물 다이오드를 이용한 디스플레이 장치 |
US20110140072A1 (en) * | 2008-08-21 | 2011-06-16 | Nanocrystal Corporation | Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques |
KR101061150B1 (ko) * | 2009-05-22 | 2011-08-31 | 서울대학교산학협력단 | 발광 디바이스와 이의 제조 방법 |
KR101663200B1 (ko) * | 2009-09-30 | 2016-10-06 | 국립대학법인 홋가이도 다이가쿠 | 터널 전계 효과 트랜지스터 및 그 제조 방법 |
DE102010012711A1 (de) * | 2010-03-25 | 2011-09-29 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements |
CN102315347B (zh) * | 2010-07-05 | 2014-01-29 | 展晶科技(深圳)有限公司 | 发光二极管磊晶结构及其制造方法 |
KR101691906B1 (ko) * | 2010-09-14 | 2017-01-02 | 삼성전자주식회사 | Ⅲ족 질화물 나노로드 발광 소자 제조방법 |
US8629531B2 (en) * | 2011-02-18 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method to reduce wafer warp for gallium nitride on silicon wafer |
FR2973936B1 (fr) * | 2011-04-05 | 2014-01-31 | Commissariat Energie Atomique | Procede de croissance selective sur une structure semiconductrice |
-
2012
- 2012-10-26 FR FR1260232A patent/FR2997558B1/fr not_active Expired - Fee Related
-
2013
- 2013-03-28 FR FR1352794A patent/FR2997552B1/fr active Active
- 2013-10-25 CN CN201380056223.3A patent/CN104918878B/zh active Active
- 2013-10-25 JP JP2015538536A patent/JP6382206B2/ja active Active
- 2013-10-25 BR BR112015008543-1A patent/BR112015008543B1/pt active IP Right Grant
- 2013-10-25 EP EP13815015.6A patent/EP2911974B1/fr active Active
- 2013-10-25 US US14/438,266 patent/US9331242B2/en active Active
- 2013-10-25 KR KR1020157011494A patent/KR102140315B1/ko active IP Right Grant
- 2013-10-25 WO PCT/FR2013/052551 patent/WO2014064395A1/fr active Application Filing
-
2015
- 2015-12-16 US US14/971,046 patent/US9728679B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9331242B2 (en) | 2016-05-03 |
CN104918878B (zh) | 2018-05-01 |
JP6382206B2 (ja) | 2018-08-29 |
FR2997552B1 (fr) | 2016-08-26 |
KR20150088785A (ko) | 2015-08-03 |
JP2015536565A (ja) | 2015-12-21 |
WO2014064395A1 (fr) | 2014-05-01 |
US20150255677A1 (en) | 2015-09-10 |
EP2911974A1 (fr) | 2015-09-02 |
KR102140315B1 (ko) | 2020-07-31 |
US9728679B2 (en) | 2017-08-08 |
EP2911974B1 (fr) | 2016-08-31 |
BR112015008543B1 (pt) | 2021-01-26 |
FR2997552A1 (fr) | 2014-05-02 |
FR2997558A1 (fr) | 2014-05-02 |
CN104918878A (zh) | 2015-09-16 |
FR2997558B1 (fr) | 2015-12-18 |
US20160111593A1 (en) | 2016-04-21 |
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B06I | Technical and formal requirements: publication cancelled |
Free format text: ANULADA A PUBLICACAO CODIGO 6.6.1 NA RPI NO 2462 DE 13/03/2018 POR TER SIDO INDEVIDA. |
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B06U | Preliminary requirement: requests with searches performed by other patent offices: suspension of the patent application procedure | ||
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Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 25/10/2013, OBSERVADAS AS CONDICOES LEGAIS. |