WO2008149548A1 - 半導体ナノワイヤおよびその製造方法 - Google Patents

半導体ナノワイヤおよびその製造方法 Download PDF

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Publication number
WO2008149548A1
WO2008149548A1 PCT/JP2008/001417 JP2008001417W WO2008149548A1 WO 2008149548 A1 WO2008149548 A1 WO 2008149548A1 JP 2008001417 W JP2008001417 W JP 2008001417W WO 2008149548 A1 WO2008149548 A1 WO 2008149548A1
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region
manufacturing
semiconductor nanowire
grows
supplying
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PCT/JP2008/001417
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English (en)
French (fr)
Inventor
Takahiro Kawashima
Tohru Saitoh
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Panasonic Corporation
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Priority to US12/451,898 priority Critical patent/US8143144B2/en
Priority to JP2009517723A priority patent/JP5498161B2/ja
Publication of WO2008149548A1 publication Critical patent/WO2008149548A1/ja

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    • H—ELECTRICITY
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    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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    • B82—NANOTECHNOLOGY
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Abstract

　第一の領域及び第二の領域を有する半導体ナノワイヤの製造方法は、基板（１０２）の上に触媒粒子（１０１）を配置する工程（ａ）と、第一の原料ガス（１０３）を供給してＶＬＳ成長機構により第一の領域（１０４）を触媒粒子から成長させる工程（ｂ）と、第一の領域の側壁に保護膜（１０５）を形成する工程（ｃ）と、第二の原料ガス（１０７）を供給してＶＬＳ成長機構により第一の領域に上に第二の領域（１０６）を成長させる工程（ｄ）とを含む。
PCT/JP2008/001417 2007-06-06 2008-06-04 半導体ナノワイヤおよびその製造方法 WO2008149548A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/451,898 US8143144B2 (en) 2007-06-06 2008-06-04 Semiconductor nanowire and its manufacturing method
JP2009517723A JP5498161B2 (ja) 2007-06-06 2008-06-04 半導体ナノワイヤの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007150196 2007-06-06
JP2007-150196 2007-06-06

Publications (1)

Publication Number Publication Date
WO2008149548A1 true WO2008149548A1 (ja) 2008-12-11

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US (1) US8143144B2 (ja)
JP (1) JP5498161B2 (ja)
WO (1) WO2008149548A1 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
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JP2011243711A (ja) * 2010-05-18 2011-12-01 National Institute For Materials Science シリコンナノ粒子／シリコンナノワイヤ複合材料、太陽電池、発光デバイス、及び製造法
JP2012018919A (ja) * 2010-06-11 2012-01-26 Semiconductor Energy Lab Co Ltd 蓄電装置
JP2012069940A (ja) * 2010-09-22 2012-04-05 Commissariat A L'energie Atomique & Aux Energies Alternatives 触媒成長によって成長したワイヤの表面上の金属触媒残渣を取り除く方法
KR20140065980A (ko) * 2012-11-22 2014-05-30 전북대학교산학협력단 다이오드의 제조방법
JP2014518004A (ja) * 2011-04-05 2014-07-24 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ 半導体構造体上の無触媒選択的成長方法
JP2015536565A (ja) * 2012-10-26 2015-12-21 アルディア 光電子デバイス、及び光電子デバイスを製造する方法
JP2016157726A (ja) * 2015-02-23 2016-09-01 学校法人早稲田大学 不純物半導体層の製造装置及び製造方法
US9991342B2 (en) 2012-10-26 2018-06-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
JP2019036672A (ja) * 2017-08-21 2019-03-07 日本電信電話株式会社 ナノワイヤトランジスタの製造方法
JP2022026490A (ja) * 2020-07-31 2022-02-10 セイコーエプソン株式会社 発光装置およびプロジェクター

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KR101588852B1 (ko) * 2008-10-31 2016-01-26 삼성전자주식회사 반도체 소자 및 그 형성방법
JP5299105B2 (ja) * 2009-06-16 2013-09-25 ソニー株式会社 二酸化バナジウムナノワイヤとその製造方法、及び二酸化バナジウムナノワイヤを用いたナノワイヤデバイス
KR101603767B1 (ko) * 2009-11-12 2016-03-16 삼성전자주식회사 광조사를 이용한 반도체성 카본나노튜브의 선택적 성장방법
US8900935B2 (en) 2011-01-25 2014-12-02 International Business Machines Corporation Deposition on a nanowire using atomic layer deposition
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WO2013095342A1 (en) 2011-12-19 2013-06-27 Intel Corporation High voltage field effect transistors
FR2995729B1 (fr) * 2012-09-18 2016-01-01 Aledia Dispositif opto-electrique a microfils ou nanofils semiconducteurs et son procede de fabrication
US10170746B2 (en) * 2012-10-17 2019-01-01 Infineon Technologies Ag Battery electrode, battery, and method for manufacturing a battery electrode
FR2997420B1 (fr) 2012-10-26 2017-02-24 Commissariat Energie Atomique Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes
US20150243837A1 (en) * 2013-03-15 2015-08-27 Moonsub Shim Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
US9835954B2 (en) * 2013-05-21 2017-12-05 Asml Netherlands B.V. Inspection method and apparatus, substrates for use therein and device manufacturing method
WO2015002944A2 (en) * 2013-07-01 2015-01-08 The Regents Of The University Of Colorado, A Body Corporate Nanostructured photocatalysts and doped wide-bandgap semiconductors
CN105405745B (zh) * 2015-11-10 2018-06-22 中国科学院半导体研究所 立式iii-v族锑化物半导体单晶薄膜的制备方法
US10312081B2 (en) 2016-07-15 2019-06-04 University Of Kentucky Research Foundation Synthesis of metal oxide surfaces and interfaces with crystallographic control using solid-liquid-vapor etching and vapor-liquid-solid growth
US11222950B2 (en) 2019-04-24 2022-01-11 National Technology & Engineering Solutions Of Sandia, Llc Method for fabricating embedded nanostructures with arbitrary shape
JP7298822B2 (ja) * 2019-06-04 2023-06-27 国立大学法人 東京大学 ナノワイヤ製造方法、及びナノワイヤ製造装置
CN111704105B (zh) * 2020-06-23 2022-06-14 中国科学院半导体研究所 一种半导体/超导体异质结纳米线网络的制备方法
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