CN104918878B - 光电子设备及其制造方法 - Google Patents

光电子设备及其制造方法 Download PDF

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CN104918878B
CN104918878B CN201380056223.3A CN201380056223A CN104918878B CN 104918878 B CN104918878 B CN 104918878B CN 201380056223 A CN201380056223 A CN 201380056223A CN 104918878 B CN104918878 B CN 104918878B
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substrate
pad
layer
island
dielectric
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CN104918878A (zh
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娜塔莉·德绍克斯
伯努瓦·阿姆斯塔特
菲力浦·吉莱
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Aledia
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Aledia
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Abstract

本发明涉及光电子设备(10)，该设备包括：基板(14)；在基板的一个表面(16)上的触头(18)；半导体元件(24)，每个元件承接触头；至少覆盖每个触头的侧面(21)的部分，该部分防止半导体元件在所述侧面上的生长；和从前述表面延伸至基板并且对于每对触头而言将来自该对的一个触头与来自该对的另一个触头连接的电介质区域(22)。

Description

光电子设备及其制造方法
本发明申请要求法国专利申请FR13/52794和法国专利申请FR12/60232的优先权，上述法国专利申请通过参考的方式并入本文中。
技术领域
本发明一般涉及半导体材料，涉及基于半导体材料的设备，并且涉及它们的制造方法。本发明更具体地设计包括三维元件的设备，并且尤其涉及半导体微米线或纳米线。
背景技术
基于主要包括第III组元素和第V组元素(例如氮化镓，GaN)的、下文中称为III-V化合物，或基于主要包括第II组元素和第VI组元素(例如氧化锌，ZnO)的、下文中称为II-VI化合物的微米线或纳米线是包括半导体材料的微米线或纳米线的实例。这种微米线或纳米线能够制造半导体设备例如光电子设备。术语“光电子设备”用于命名能够将电子信号转化成电子辐射或其它方式的设备，尤其用于命名专用于检测、测量或电磁辐射的发射的设备或专用于光伏应用的设备。
用于制造半导体材料微米线或纳米线的方法应当能够利用每个微米线或纳米线的几何形状、位置和结晶属性的正确和统一控制制造微米线或纳米线。
文件US789443描述用于制造纳米线的方法，包括：在基板的平面上的电介质材料层的沉积，在电介质材料层中的开口的蚀刻以暴露基板的部分，利用促进纳米线的生长的材料的部分的开口的填充，以及在这些部分上的开口中的纳米线的形成。选择电介质材料使得纳米线不能直接在其上生长。
在微米线或纳米线中，为了具有电子信号转换成电磁辐射或电磁辐射转换成电子信号的最可能的属性，期望对于每个微米线或纳米线而言，基本上具有单晶结构。具体地，当微米线或纳米线主要由基于第一元素和第二元素例如III-V化合物或II-VI化合物的材料形成时，期望每个微米线或纳米线基本上具有沿着整个微米线或纳米线的不变极性。
然而，利用在US7829443中公开的方法，纳米线生长可能被扰乱，使得每个纳米线可能不具有单晶结构。具体地，当微米线或纳米线主要由基于第一元素和第二元素例如III-V化合物或II-VI化合物的材料形成时，具有与纳米线核心中的极性有关的相反极性的外围层可以出现在纳米线侧。
这会引起缺陷的形成，尤其在晶界处，这会改变电子信号转换成电磁信号或相反转换的效率。
发明内容
因此，实施方式的目的在于克服具体带有微米线或纳米线的光电子设备及其之前描述的制造方法的至少部分缺点。
另一个实施方式提供不通过在电介质材料层中制成的开口形成三维元件特别是的半导体材料微米线或纳米线。
另一个实施方式提供：由半导体材料制成的每个三维元件，特别是每个微米线或纳米线，基本上具有单晶结构。
另一个实施方式提供正确和统一控制由半导体材料制成的每个三维元件，特别是微米线或纳米线的定位、几何形状和结晶属性的可能性。
另一个实施方式提供以工业规模和最低成本形成由半导体材料制成的三维元件，特别是微米线或纳米线的可能性。
因此，实施方式提供一种光电子设备(10；60；70)包括：
基板；
在基板的表面上的衬垫；
半导体元件，每个原件搁置在衬垫上；
至少覆盖每个衬垫的侧面的部分，所述部分防止在侧面上的半导体元件的生长。
根据本发明的实施方式，设备还包括电介质区域，所述电介质区域在基板中从所述表面开始延伸并且对于每对衬垫而言将该对中的一个衬垫连接至该对中的另一个衬垫。
根据本发明的实施方式，基板由从包括硅、锗、碳化硅、III-V化合物、II-VI化合物和这些化合物的组合的组中选择的第一半导体材料制成。
根据本发明的实施方式，每个半导体元件包括至少一个部分(26，28)，所述部分主要包括与衬垫(18)接触的第二半导体材料，所述第二半导体材料从包括硅、锗、碳化硅、III-V化合物、II-VI化合物和这些化合物的组合的组中选择。
根据一个实施方式，每个衬垫的厚度在1nm至100nm的范围内，并且基板与每个衬垫电接触。
根据一个实施方式，每个半导体元件为微米线、纳米线、圆锥元件或楔形元件。
实施方式还提供制造光电子设备的方法，包括以下连续步骤：
提供基板；
在所述基板的表面上形成衬垫；
形成至少覆盖每个衬垫的侧面的部分并且
形成半导体元件，每个元件搁置在所述衬垫上，所述部分包括防止所述侧面上的半导体的生长的材料。
根据一个实施方式，所述部分由绝缘材料制成。
根据一个实施方式，所述部分的形成步骤包括：形成在衬垫之间在表面上延伸的电介质材料并且与侧面接触的步骤。
根据一个实施方式，形成电介质其余的步骤包括以下步骤：
在所述基板和衬垫上沉积第一电介质材料的第一电介质层，第一电介质层在衬垫上形成凸部；
在所述第一电介质层上形成与第一电介质材料不同的第二电介质材料的第二电介质层；
通过化学机制来移除和抛光第二电介质层以暴露第一电介质层的凸部；以及
将第一电介质层蚀刻并且保留第二电介质层的部分以暴露衬垫的顶部。
根据一个实施方式，该方法还包括：形成在基板中从所述表面开始延伸的电介质区域，和对于每对衬垫而言，将该对中的一个衬垫连接至该对中的另一个衬垫。
根据一个实施方式，通过基板的氧化和渗氮形成区域。
根据一个实施方式，方法包括以下连续步骤：
在所述基板上沉积层；
在所述层上形成绝缘块；
将层的未被绝缘块覆盖的部分蚀刻以形成衬垫；
将衬的侧面和未被衬垫覆盖的基板部分垫氧化；
将所述绝缘块移除。
根据一个实施方式，方法包括以下连续步骤：
在所述基板上沉积层；
在所述层上形成绝缘块；
将层的未被绝缘块覆盖的部分蚀刻以形成衬垫；
将所述绝缘块移除；
沉积覆盖所述衬垫和在所述衬垫之间的所述基板的电介质层；
各向异性地蚀刻所述电介质层以将电介质从所述基板和从所述衬垫的顶部移除并且留下在所述侧面上的电介质层的部分；
对未被衬垫覆盖的基板部分以及可能衬垫(18)的顶部进行渗氮。
附图说明
在结合附图的具体权利要求的以下非限制性描述中详细讨论前述和其它特征以及优点，其中：
图1A至图1C是在制造包括微米线或纳米线的光电子设备的已知方法的连续步骤中获得的结构的部分简化横截面图；
图2为通过关于图1A至图1C而描述的方法获得的微米线或纳米线的部分简化的详细横截面图；
图3为包括微米线或纳米线的光电子设备的实施方式的部分简化横截面图；
图4A至图4I为制造图3的光电子设备的方法的另一个实施方式的连续步骤获得的结构的部分简化横截面图；
图5A至图5B为制造图3的光电子设备的方法的另一个实施方式的连续步骤获得的部分简化横截面图；
图6为包括微米线或纳米线的光电子设备的另一个实施方式的部分简化横截面图；
图7A至图7D为制造图6的光电子设备的方法的另一个实施方式的连续步骤获得的结构的部分简化横截面图；
图8为包括微米线或纳米线的光电子设备的另一个实施方式的部分简化横截面图；以及
图9为带有锥形三维元件的光电子设备的实施方式的部分简化横截面图。
具体实施方式
为了清楚，在各个图中相同的元件由相同的参考标号来指定，而且进一步，如通常在电子电路的表示中的那样，各种图并非按比例的。而且，仅显示和将描述对于当前说明书的理解有用的那些元件。具体地，下文中描述的光电子设备控制装置在本领域技术人员的能力中，并且不被描述。
在以下说明书中，除非有相反指示，术语“大致上”、“大约”和“大约的”意味着“10％以内”。而且，“由材料形成的化合物”或“基于材料的化合物”意味着包括比例大于或等于95％的所述材料的化合物，这个比例优选地大于99％。
本发明涉及三维元件例如微米线、纳米线或锥形元件的制造。在以下说明书中，为了微米线或纳米线的制造描述实施方式。但是，实现这些实施方式用于制造不是微米线或纳米线的三维元件例如用于制造锥形三维元件。
术语“微米线”或“纳米线”指示这样一种三维结构，其具有沿着优选方向的延长形状，具有在从5nm至2.5μm的范围内被称为次要维度的至少两个维度，具有称为主要维度的第三维度，该主要维度等于最大的次要维度的至少1倍优选地至少5倍并且更优仍然至少10倍。在特定实施方式中，次要维度小于或等于大约1μm，优选地在范围100nm至1μm范围中，更优选地从100nm至300nm。在一定实施方式中，每个微米线或纳米线的高度可以大于或等于500nm，优选地在从1μm至50μm的范围内。
在以下说明中，术语“线”用于意味着“微米线或纳米线”。优选地，在与线的优选方向垂直的平面中，通过横截面的重心的线的正中线为大致上的直线并且在下文中称为线的“轴”。
线的横截面可以具有不同形状，诸如例如椭圆形、圆形或锥形，具体地为三角形、矩形、方形或六边形。应当理解是，关于线或沉积在线上的层的横截面而提到的术语“直径”指示与这个横截面中的目标结构的表面关联的数量，该横截面对应于例如具有和线横截面相同的表面面积的盘的直径。
这个线可以由至少一种半导体材料至少部分地形成。半导体材料可以为硅、锗、碳化硅、III-V化合物、II-VI化合物或这些化合物的组合。
线可以至少部分地由主要包括III-V化合物例如III-N化合物的半导体材料形成。III族元素的实例包括镓(Ga)、铟(In)或铝(Al)。III-N化合物的实例为GaN、AlN、InN、InGaN、AlGaN或AlInGaN。也可以使用其它V族元素例如磷或砷。通常，在III-V化合物中的元素可以以不同摩尔分数结合。
线可以基于主要包括II-VI化合物的半导体材料而至少部分地形成。II族元素的实例包括IIA族元素，具体地为铍(Be)和镁(Mg)；以及IIB族元素，具体地为锌(Zn)和镉(Cd)。VI族元素的实例包括VIA元素，具体为氧(O)和碲(Te)。II-VI化合物的实例为ZnO、ZnMgO、CdZnO或CdZnMgO。通常，II-VI化合物中的元素可以以不同的摩尔分数结合。
在一定实施方式中，线可以包括掺杂物。作为一个实例，对于III-V化合物而言，掺杂物可以从包括II族例如镁(Mg)、锌(Zn)、镉(Cd)或汞(Hg)的P型掺杂物；包括IV族例如碳(C)的P型掺杂物或包括IV族例如硅(Si)、锗(Ge)、硒(Se)、硫(S)、铽(Tb)或锡(Sn)的N型掺杂物的组中选择。
在基板上形成线。基板可以对应一片式结构或对应于覆盖由另一个材料形成的支撑物的层。基板例如为半导体基板例如由硅、锗、碳化硅、III-V化合物例如GaN或GaAs制成的基板，或者ZnO基板。基板可以由导电材料例如金属，或者有绝缘材料例如蓝宝石、玻璃或陶瓷制成。
本发明的原理为在基板的表面上形成促进线的生长的材料的衬垫或岛，还在下文中称为种子岛，并且为然后执行处理以保护种子岛的侧面和未被种子岛覆盖的基板部分的表面，以形成不适合线的生长的保护区域例如电介质区域，其在种子岛的侧面上并且在基板的顶部上和/或内延伸，并且对于每对衬垫而言，将对中的一个衬垫连接至对中的而另一个衬垫，而线没有在保护区域上生长。
说基于至少一种第一元素和第二元素的化合物具有第一元素的极性和第二元素的极性，这意味着材料沿着优选方向生长，并且意味着当在与优选生长方向垂直的平面中切割材料时，暴露的表面在第一元素的极性的情况中本质上包括第一元素的原子和在第二元素的极性的情况中包括第二元素的原子。
形成种子岛的材料选择为根据相同的极性以促进线生长。作为一个实例，当线主要包括III-V化合物时，形成种子岛的材料优选选择为根据V族元素的极性以促进III-V化合物的生长。之后，III-V化合物从每个种子岛的顶部开始在种子岛上沿着V族元素的极性生长，并且不在种子岛的侧面上或者也不在基板的其余部分上生长。而且，本发明显示之后每个线在整个线中根据大致上不变的极性生长。当线主要包括II-VI化合物时，形成种子岛的材料优先选择为根据VI族元素的极性以促进II-VI化合物的生长。然后II-VI化合物从每个种子岛的顶部开始在种子岛上根据VI族元素的极性生长，并且既没有种子岛的侧面或也不在基板的其余部分上生长。
在V族元素为氮的III-V化合物的情况中，形成岛的材料可以为根据N极性促进线的生长的材料。作为实例，这个岛可以由以下及其组合和它们氮化合物的组合形成：氮化铝(AlN)、硼(B)、氮化硼(BN)、钛(Ti)、氮化钛(TiN)、钽(TA)、氮化钽(TaN)、铪元素(Hf)、氮化铪(HfN)、铌(Nb)、氮化铌(NbN)、锆(Zr)、锆硼酸(ZrB2)、氮化锆(ZrN)、碳化硅(SiC)、钽碳氮化物(TaCN)、MgxNy形式的氮化镁，其中x大约等于3而y大约等于2例如Mg3N2形式的氮化镁或镁氮化镓(MgGaN)、钨(W)、氮化钨(WN)、铂(Pt)、氮化铂(PtN)，。优选地，形成种子岛的材料为氮化铝。
线生长方法可以为例如化学气相沉积(CVD)或金属有机物气相沉积(MOCVD)又称为金属有机物气相外延(MOVPE)的方法。然而，可以使用例如分子束外延(MBE)、气体源MBE(GSMBE)、金属有机物MBE(MOMBE)、等离子辅助MBE(PAMBE)、原子层外延(ALE)或氢化物气相外延(HVPE)的方法。然而，可以使用电化学过程例如化学浴沉积(CBD)、热液过程、液体汽溶高温分解或电沉积。
作为实例，方法可以包括：将反应器注入III族元素的前体和V族元素的前体。III族元素的前体的实例为三甲基镓(TMGa)、三乙基镓(TEGa)、三乙基铟(TMIn)、三乙基铝(TMAl)。V族元素的前体的实例为氨(NH3)、叔丁基磷化氮(TBT)、砷化氢(AsH3)或偏二甲基肼(UDMH)。
根据本发明的实施方式，在III-V化合物的线的生长的第一阶段中，除了III-V化合物的前体之外，附加元素的前体过度添加。附加元素可以为硅(Si)。硅的前体的实例为硅烷(SiH4)。
图1A至图1C示出制造包括微米线或纳米线的光电子设备的已知方法的实例的连续步骤中获得的结构。
(i)电介质材料的层1沉积在基板2上并且在层1中蚀刻开口4，开口4暴露基板2的一定部分5(图1)。
(ii)在开口4中生长用于促进线的生长的材料的部分6(图1B)。
(iii)在每个部分6上生长线7(图1C)。
图2为图1C中显示的线7中的一个的详细图。
本发明显示当先前关于图1A至1C而描述的方法被实现以为了基于第一元素和第二元素的化合物的半导体材料的线的形成时，这导致线7的形成，线7包括单晶核8，具有第一元素的极性，由具有第二元素的极性的单晶外围层9围绕。这可以导致在层9和核8之间的界面处的缺陷的发生。
解释可能是，电介质层1的出现扰乱部分6的形成，当线7从基本部分6开始生长时其引起层9的形成。
图3为根据从例如先前描述的并且能够发送电磁辐射的线形成的光电子设备10的实施方式的部分简化横截面图。
从图3的底至顶，设备10包括：
第一偏压电极12；
包括相对的表面15和16的基板14(例如半导体)，表面15与电极12接触；
促进线的生长并且设置在表面16上的种子岛18，每个岛18包括与基板14的表面16接触的下表面19，和与表面19相对并且与表面19和侧表面21成距离的上表面20，或将下表面19连接至上表面20的侧面；
在基板14中的电介质区域22，在每个岛18对之间从表面16延伸跨越基板14的深度的一部分，电介质区域22由由于基板转化造成的电介质形成，其保护根本基板并且防止线的生长；
不适合线的生长的材料的保护部分23，其覆盖侧表面21并且围绕每个岛18，保护部分23防止线的生长；
高度为H1的线24(显示三个线)，每个线24与岛18中的一个的表面20接触，每个线24包括与岛18接触的高度为H2的下部26和与下部26接触的高度为H3的上部28；
覆盖每个下部26的外围的钝化层29；
覆盖每个上部28的有源层30；
覆盖每个有源层30的一个或多个半导体层32；
沿着至少高度H2覆盖在线24和每个线24之间的表面16的绝缘部分34；
覆盖在线24之间的绝缘部分34的反射部分36；
覆盖半导体层32和绝缘部分34的第二电极层38。
基板14例如为半导体基板例如硅基板。基板14可以以第一导电性类型例如N型掺杂来掺杂。表面15和16可以是平面的并且平行的。基板14的表面16可以为<100>表面。
电极12可以对应于在基板14的表面15上延伸的导电层。形成电极12的材料为例如硅化镍(NiSi)、铝(Al)、硅化铝(AlSi)、钛(Ti)或硅化钛(TiSi)。这层可以在焊接的情况下由另一个金属层例如金、铜或共熔(Ti/Ni/Au或Sn/Ag/Cu)覆盖。
岛18具有例如在1至100毫微米范围中的厚度，优选的在10至60毫微米范围中的厚度。岛18位于表面16上，以便它们从表面16伸出。每个岛18的顶部20因此在不用于表面16的面中。每个岛18具有优选的纹理，并且当形成每个岛的材料包括至少两种元素的合金时，具有优选的极性。优选的纹理意味着形成岛18的晶体具有优选的生长方向，这对于所有岛18是一样的。优选的极性意味着所有岛18大致上具有相同的极性。这意味着当形成每个岛的材料包括至少两个元素的合金，当在与材料的优选生长方向垂直的平面中切割材料时，暴露的表面基本上对于每个岛18而言包括相同的元素原子。每个岛18可以具有与基板14导电性相同的导电性以限制岛18和基板14之间的界面抗阻。
保护部分23可以由沉积在种子岛18的侧面21上的材料制成。材料可以例如通过CVD而被共形地沉积。其例如为氧化硅(SiO2)、氮化硅(SixNy，其中x大约等于3而y大约等于4例如Si3N4)、氧化铝(Al2O3)、氧化铪(HfO2)或金刚石。保护部分23可以进一步由形成种子岛18的材料的转化导致的电介质材料制成。形成保护部分23的材料然后可以对应于先前描述的种子岛18的材料的实例的氧化物。作为实例，保护部分23的厚度在从5nm至100nm的范围内例如等于大约30nm。
电介质区域22可以部分地在岛18之下延伸。电介质区域22可以部分地在一定岛18之下或在每个岛18之下延伸。然而，半导体基板14应当维持在与每个岛18的接触中。因此选择电介质区域22的形成条件使得电介质区域22以沿着比线横截面的最大长度的一半短的最大长度延伸。作为实例，每个电介质区域22的深度在从5nm至100nm的范围中例如10nm。
两个相邻岛18的中心可以相距0.5μm至10μm优选地以从1.5μm至4μm。作为实例，岛18可以规则地分布在基板14上，电介质区域22形成围绕每个岛18的网格。作为实例，岛18可以分布在六角形网络中。
每个线24可以为沿着大致上与表面16垂直的轴D的延长的半导体结构。每个线24可以具有带有六角形基座的一般延长的圆柱形。每个线24的平均直径可以在从50nm至2.5μm的范围中，并且每个线24的高度H1可以在从250nm至50μm的范围中。
每个线24的下部26主要由III-N化合物例如氮化镓制成，其以第一导电类型例如硅掺杂。下部26的外围覆盖电介质层29例如SiN，其从与关联岛18接触的下部26的端部开始高至高度H2。高度H2可以在从100nm至25μm的范围中。电介质材料层29具有在一个原子单层和100nm之间优选地在一个原子单层和10nm之间的厚度。
每个线24的上部28例如至少部分地由III-N化合物例如GaN制成。上部28可以以第一导电类型例如N型掺杂，或者可以不是有意地掺杂。上部28延伸至高度H3，该高度可以在从100nm至25μm的范围中。
在主要由GaN制成的线的情况中，线的晶体结构可以为纤维锌矿型，线沿着轴C延伸。线的晶体结构可以是立方体类型的。
有源层30是这样一种层，其中设备10提供的辐射的大部分从该层发射。根据实例，有源层30可以包括限制装置例如多个量子阱。其例如由交替的GaN和InGaN层形成，其具有分别从5nm至20nm(例如8nm)以及从1nm至10nm(例如2.5nm)的厚度。GaN层可以为例如N或P型掺杂。根据另一个实例，有源层可以包括单个InGaN层，单个InGaN层例如具有大于10nm的厚度。
半导体层32使得能够利用有源层30和/或上部28形成P-N或P-I-N结。使得将洞经由电极38注入有源层30。
半导体层32的堆可以包括由三元合金形成电子阻挡层40，其例如由与附加层和有源层30接触的氮化铝镓(AlGaN)或氮化铝铟(AlInN)形成，以提供在第二电极38和有源层30之间的良好电接触，例如由与电子阻挡层40和电极38接触的氮化镓(GaN)制成。半导体层42以与部分28的导电类型相反的导电类型例如P型掺杂。电子阻挡层40可以由和半导体层42的导电类型相同的导电类型制成。
绝缘部分34能够防止每个线24的下部和电极38之间的直接电接触的形成。绝缘部分34可以例如通过CVD而共形设置。绝缘部分34可以由电介质材料例如氧化硅(SiO2)、氮化硅(SixNy，其中x大约等于3而y大约等于4例如Si3N4)，氧化铝(Al2O3)、氧化铪(HfO2)或金刚石形成。
反射部分36为例如由铝、银或钌制成并且例如具有大于100nm的厚度。
第二电极38能够对每个线24的有源层30偏置和允许线24所发出或接收的电磁辐射通过。形成电极38的材料可以是透明的并且可以是导电材料例如氧化铟锡(或ITO)，氧化铝锌或石墨烯。
在本发明中，线24形成在作为分布在基板14上的单独元件的岛18上。如果线形成在覆盖基板14的层上，那么要以具有不同热膨胀系数的材料制成的层和基板14的事实会引起在光电子设备的制造期间的光电子设备中的机械应力的发生。本发明有利地使得能够避免由于形成岛18和基板14的材料之间的热膨胀系数中的不同造成的岛18和基板14中的机械应力的发生。
如果种子岛18的侧面21不由不合适线的生长的材料覆盖，那么它们是有利的生长点。干净侧面21的存在然后引起寄生生长例如除了在表面20上的线之外的在侧面21上的多个线的生长，或具有与种子岛18的表面20不垂直的轴的线的生长。在本实施方式中，因为种子岛18的侧面21由不适合线的生长的材料覆盖，所以线24的生长仅从岛18的顶部20开始发生。在与来自相同岛18的至表面21的法线不同方向上的一个或多个线24的生长的风险因此被减少。
图4A至图4I示出制造图3的光电子设备的方法的另一个实施方式的连续步骤获得的结构。
根据本发明的制造方法的实施方式包括以下步骤：
(1)在基板14上沉积例如根据N极性促进III-N化合物的生长的材料的均匀层50(图4A)。其可以为氮化铝。层50具有例如在从1nm至100nm的范围内，优选地从10nm至60nm的范围内的厚度。可以通过MOCVD型方法获得层50。然而，方法例如CVD、MBE、GAMBE、ALE、HVPE、ALD(原子层沉积)、蒸发或反应阴极溅射，以及提供纹理层的任何沉积型可以使用。当层50由氮化铝制成时，层50应当大致上纹理化并且具有优选极性。层50的纹理可以通过在层50的沉积后执行的附加处理来获得。例如为在氨流(NH3)之下的退火。
(2)将电介质材料的层51沉积在层50上(图4B)。层51由在形成层50的材料之上选择性地蚀刻的电介质材料制成。电介质材料为例如氮化硅(例如Si3N4)。电介质层51例如具有从50nm至300nm范围内例如大约100nm的厚度。
(3)在电介质层51中蚀刻开口54以形成电介质层51的部分52或块并且暴露层50的区域，以及在层50的暴露部分之上的层50中蚀刻开口56以形成岛18(图4C)。开口54的蚀刻可以通过不引起层50的蚀刻的选择性蚀刻的步骤而执行。可以使用六氟化硫等离子(SF6)来蚀刻。开口56的蚀刻可以对应于在基板的顶部上/内停止的干或湿蚀刻。作为变化，开口56的蚀刻可以为反应离子蚀刻或RIE、电感耦合等离子或ICP蚀刻，或湿蚀刻。
(4)移除部分52(图4D)。电介质层的部分52的移除可以通过不引起衬垫18和基板14的蚀刻的选择性蚀刻步骤来执行。可以为使用六氟化硫等离子(SF6)或氟化等离子的蚀刻，或可以为使用氟化铵(NH4F)和氢氟酸(HF)的混合物的BOE型(缓冲氧化物蚀刻)湿蚀刻。
(5)在岛19和基板14上沉积不合适线生长的材料例如电介质材料的层58(图4E)。这优选地是共形或基本上共形的沉积。层58由可以选择性蚀刻在用于形成岛18和基板14的材料上的材料制成。层58例如由氮化硅(例如Si3N4)、氧化硅(SiO2)、或用于种子岛18的形成的先前描述的材料的硅化物制成。层58具有例如至少等于种子岛18的厚度的三分之一的厚度，并且具体地在从5nm至200nm的范围内的厚度例如等于大约100nm。
(6)各向异性蚀刻层58以移除层58的覆盖14岛18的顶部20和基板的部分，并且保持层58的覆盖岛18的侧面21的保护部分23(图4F)。这个蚀刻在形成基板14的材料和形成种子岛18的材料之上是选择性的。例如为粒子蚀刻或反应离子蚀刻。
(7)通过对未被岛18覆盖的基板14的暴露区域渗氮的方法形成电介质区域22(图4G)。电介质区域22本质上由氮化硅形成。获得的氮化硅深度应当足以防止III族元素例如镓针对形成基板14的材料的腐蚀。电介质区域22的深度可以在从5nm至100nm的范围内，优选地大于或等于10nm。电介质区域22可以部分地在岛18之下延伸。然而，选择渗氮条件使得基板14保持与每个岛18的接触。而且，过厚可以在电介质区域22的水平处出现。在专用炉或在外延反应器中利用氨执行渗氮步骤。渗氮温度可以从几分钟变化至一个小时。还可以获得适合于线24的下部26的随后生长的岛18的顶部20的渗氮。渗氮方法可以以多个步骤执行。作为实例，具体地，当岛由铝制成(可能以硅掺杂)时，渗氮步骤可以包括第一渗氮阶段，该阶段可以在第一温度例如在400℃和750℃之间的范围内执行，该阶段后面接着在严格大于第一温度的第二温度例如在从800℃至1100℃的范围内执行的第二渗氮阶段。第一阶段促进每个岛18的顶部20的渗氮，同时第二阶段促进对未被岛18覆盖的基板14的部分的渗氮。
(8)将每个线24的钝化下部26生长上至高度H2(图4H)。每个线24从种子岛18的顶部处的表面20开始生长。每个线24的下部26可以通过MOCVD型方法来获得。但是，可以使用方法例如CVD、MBE、MOMBE、PAMBE、ALE、HVPE或电化学方法。
作为实例，在其中下部26由N型重掺杂GaN制成的情况中，MOCVD型方法可以通过进入莲蓬头型MOVCD反应器的镓前体气体例如三甲基镓(TMGa)和氮前体气体例如氨(NH3)的注入来实现。作为实例，由AIXTRON商业化的莲蓬头型3x2"MOVCD反应器可以被使用。在5-200范围内，优选地在10-100范围内的三甲基镓和氨之间的分子流比例使得能够促进线的生长。作为实例，确保金属有机元素自始至终进入反应器的扩散的载体气体在TMGa起泡器中充装金属有机元素。根据标准操作调节来调节后者。60sccm(标准立方厘米每秒)的流动例如为了TMGa而被选择，而300sccm流用于NH3(标准NH3瓶)。使用大约800mbar(800hPa)的压力。气体混合物还包括注入MOCVD反应器的硅烷，其材料为硅前体。硅烷可以在1000ppm上在氢中被稀释，并且提供20sccm流。反应器中的温度例如在从950℃至1,100℃的范围中，优选地在从990℃至1,060℃范围中。为了从起泡器的出口传送物质至两个反应器空间，使用在两个空间之间分布的载体气体例如N2的200sccm流。给定先前指示的气体流动作为指示并且其应当根据反应器的尺寸和特征来适配。
在前体气体之中的硅烷的存在导致GaN化合物内包括硅。而且，这导致形成氮化硅层29，其沿着下部26的生长覆盖除了顶部之外高度为H2的下部26的外围。
(9)在下部26的顶部上生长每个线24的高度为H3的上部28(图4I)。对于上部28的生长而言，作为实例，先前描述的MOCVD反应器操作条件对于反应器中的硅烷流动减少例如大于或等于10倍的事实而言被维持或被停止。即使当硅烷流停止时，有源部分可以被N型掺杂，因为在这个有源部分中起源于相邻钝化部分的掺杂剂的扩散或因为GaN的剩余掺杂。
方法包括以下附加步骤：
(10)对于每个线24，通过外延形成有源层30。给定种子岛18的侧面21上的钝化的保护部分23和覆盖下部26的外围的钝化部分29的存在，有源层30的沉积只发生在线24的上部28上。
(11)对于每个线24，通过外延形成电子阻挡层40和半导体层42；
(12)形成绝缘部分34。绝缘部分34可以通过将绝缘层共形沉积在整个结构上、在线24之间而沉积树脂层，将未被树脂覆盖的绝缘层蚀刻以暴露半导体层42，并且将树脂移除。
(13)形成反射部分36；以及
(14)形成电极38和12。
图5A至图5b示出制造在图3中显示的光电子设备10的方法的另一个实施方式的步骤(4)’和(5)’并且替代之前关于图4D至4G而描述的步骤(4)至(7)，其它步骤(1)至(3)以及(8)至(14)与先前所描述的那些步骤一样。步骤(4)’和(5)’如下：
(4)’通过基板14的暴露区域和种子岛18的热氧化的方法形成保护部分23和电介质区域22(图5A)。保护部分23基本上由形成先前描述种子岛18的材料的氧化物制成。电介质区域22基本上由氧化硅(SiO2)制成，并且当种子岛18由氮化铝制成时，保护部分23基本上由氧化铝制成。氧化硅的电介质区域22的获得深度应当足以防止III族元素例如镓对形成基板14的材料的腐蚀。电介质区域22的深度可以在从5nm至100nm的范围内，优选地大于或等于10nm。保护部分23具有在从5nm至100nm的范围内例如等于大约10nm的厚度。
电介质区域22和保护部分23可以在高温炉中形成。氧化步骤可以利用氧气或利用水蒸气来执行。作为实例，对于从几分钟变化至一小时的氧化时期而言，氧化温度从750℃变化至1,100℃。在形成电介质区域22和保护部分23的步骤期间，部分52保护每个岛18的顶部20不受氧化处理。电介质区域22可以部分地在岛18之下延伸。但是，选择氧化条件以便基板14保持与每个岛18的电接触。而且，过厚可以出现在电介质区域22的水平处。
(5)’移除电介质层51的部分52(图5B)。用于形成部分52的材料被选择为在形成种子岛18、电介质区域22和保护部分23的材料上被选择性地蚀刻。作为实例，形成部分52的材料为氮化硅。这个可以通过不引起衬垫18、保护部分23和电介质区域22的蚀刻的选择性蚀刻的步骤来执行。其可以是使用六氟化硫等离子(SF6)的蚀刻。
图6为从例如先前所描述的并且能够发射电磁辐射的线24形成的光电子设备60的另一个实施方式的部分简化横截面图。设备60不同于设备10在于在基板14中延伸的电介质区域22和设备10的种子岛18的侧面21上的保护部分23被替换为形成在基板14的表面16上并且在岛18之间延伸与岛18的侧面接触的绝缘区域62。形成绝缘区域62的电介质材料为例如氮化硅(例如Si3N4)。绝缘区域62例如具有大致上与种子岛18一样的高度。
图7A至图7D示出制造光电子设备60的方法的实施方式的步骤(5)”、(6)”、(7)”和(8)”并且替代先前关于4E至4G而描述的步骤(5)至(7)，其它步骤(1)至(4)以及(8)至(14)与先前描述的那些步骤一样。步骤(5)”、(6)”、(7)”和(8)”如下：
(5)”将第一电介质材料的层64沉积在种子岛18上(图7A)。层64由可以在形成种子岛18的材料上的被选择性地蚀刻的第一电介质材料制成。第一电介质材料为例如氧化硅或氮化硅。电介质层64优选地具有严格大于或等于种子岛18厚度的，优选地大于或等于种子岛18厚度的至少1.5倍的厚度。作为实例，层64具有在从1nm至100nm的范围中例如大约60nm的厚度。层64被例如共形沉积。层64因此在每个种子岛18上形成凸块65。
(6)”将第二电介质材料的层66沉积在层64上(图7B)。第二电介质材料不同于第一电介质材料。但是，第二电介质材料被选择为使得存在这样一种蚀刻方法，其使得大致上以相同速度对第一电介质材料和第二电介质材料进行非选择性蚀刻。当第一电介质材料为氮化硅时，第二电介质材料为例如氧化硅，当第一电介质材料氧化硅时，第二电介质材料为例如氮化硅。电介质层66具有严格大于电介质层64的厚度的厚度，优选地为大于或等于层64的厚度的1.5倍的厚度，更优选地等于或大于层64的厚度的3倍的厚度。作为实例，层66具有在50nm至200nm的范围中的例如大约100nm的厚度。层66被例如共形沉积。
(7)”蚀刻层66以暴露层64的部分(图7C)。蚀刻可以为CMP(化学机械平面化)。给定第一电介质材料和第二电介质材料是不同的，当层64通过光检查开始可见时，可以停止蚀刻。在蚀刻的末尾，层66的部分68留在层64的凸块65之间。在这个蚀刻步骤之后获得的结构具有大致上平面的上表面69。
(8)”将层66的剩余部分68和层64进行蚀刻以暴露种子岛18的顶部20(图7D)。该蚀刻在形成种子岛18的材料上是选择性的。其可以使等离子蚀刻或湿刻。给定形成种子岛18的材料不同于第一电介质材料，当种子岛18的顶部20通过光检测是可见的时，可以停止蚀刻。在图7D中，在蚀刻步骤的末尾，层66的为维持部分大致上消失。但是，作为变形，当停止蚀刻时，保留衬垫18之间的层66的部分。
图8为能够发射电磁辐射的光电子设备70的另一个实施方式的部分简化横截面图。设备70不同于设备10尤其在于每个线24的有源部分的形状。事实上，对于每个线24而言，有源部分72仅覆盖线24的顶部。有源部分72可以具有与如之前描述的有源层30的相同的成分。而且，半导体部分74的堆覆盖有源部分72。半导体层74的堆可以具有与如之前描述的堆32相同的成分。
图9为光电子设备80的实施方式的部分简化横截面图，其在在接着图4G中示出的步骤的制造步骤处带有锥形三维元件。生长例如圆锥或带有多边形基座的锥形具体地以金字塔形或截断的金字塔形的三维元件80。作为实例，当三维元件助于包括III-V化合物时，形成种子岛18的材料优选地选择为根据III族元素的极性促进III-V化合物的生长。
已描述本发明的特定实施方式。对本领域技术人员会发生各种改变，修改和改进。具体地，尽管其中覆盖有第一电极的线形成在支撑物的第一表面上，同时形成在支撑物的与第一表面相对的第二表面上的第二电极已经显示在图中，但是清楚的是，第二电极可以提供在第一表面的侧边上。
而且，尽管在之前描述的实施方式中，每个线24包括在于种子岛18的顶部20接触的线的基底处的钝化层26，但是可以没有钝化下部26。
而且，虽热光电子设备的不同的之前描述的实施方式能够发射电磁辐射，但是这种设备可以由本领域技术人员容易地适配以接收电磁辐射并且将其转化成电信号。然后，有源层30是这样一种层，在该层中捕捉设备所接收的辐射。这种适配通过适配线24的每个的两个有源层30、70和通过将适合的偏置应用到半导体结构上来执行。这种设备10、70的适配可以被执行以形成专用于测量或检测电磁辐射的光电子设备，或专用于光伏应用的光电子设备。

Claims (11)

1.一种光电子设备(10；60；70)包括：
基板(14)；
在基板的表面(16)上的衬垫(18)；
半导体元件(24；82)，每个原件搁置在衬垫上；
至少覆盖每个衬垫的侧面(21)的部分(23；62)，所述部分防止半导体元件在所述侧面上的生长；以及
电介质区域(22)，所述电介质区域(22)在基板(14)中从所述表面(16)延伸并且对于每对衬垫(18)将该对中的一个衬垫连接至该对中的另一个衬垫。
2.根据权利要求1所述的光电子设备，其中，基板(14)由从包括硅、锗、碳化硅、III-V化合物、II-VI化合物和这些化合物的组合的组中选择的第一半导体材料制成。
3.根据权利要求2所述的光电子设备，其中，每个元件(24；82)包括至少一个部件(26，28)，其包括与其中一个衬垫(18)接触的第二半导体材料，所述第二半导体材料是从包括硅、锗、碳化硅、III-V化合物、II-VI化合物和这些化合物的组合的组中选择的。
4.根据权利要求1至3中的任一项所述的光电子设备，其中，每个衬垫(18)的厚度在1nm至100nm的范围内，并且其中基板(14)与每个衬垫(18)电接触。
5.根据权利要求1所述的光电子设备，其中，每个元件(24；82)为微米线、纳米线、圆锥元件或楔形元件。
6.根据权利要求1所述的光电子设备，其中，部分(23；62)由绝缘材料制成。
7.一种制造光电子设备(10；60；70；80)的方法，包括以下连续步骤：
提供基板(14)；
在所述基板的表面(16)上形成衬垫(18)；
形成至少覆盖每个衬垫的侧面(21)的部分(23；62)并且形成电介质区域(22)，所述电介质区域在基板(14)中从所述表面(16)延伸并且对于每对衬垫(18)将该对中的一个衬垫连接至该对中的另一个衬垫；以及
形成半导体元件(24；82)，每个元件搁置在所述衬垫上，所述部分包括防止半导体元件在所述侧面上的生长的材料。
8.根据权利要求7所述的方法，其中，所述部分(23；62)由绝缘材料制成。
9.根据权利要求7或8所述的方法，其中，区域(22)通过所述基板(14)的氧化或渗氮形成。
10.根据权利要求9所述的方法，包括以下的连续步骤：
在所述基板(14)上沉积层(50)；
在所述层(50)上形成绝缘块(52)；
将所述层的未被绝缘块覆盖的部分蚀刻以形成衬垫(18)；
将衬垫的侧面(21)和未被衬垫覆盖的基板部分氧化；和
将所述绝缘块移除。
11.根据权利要求9所述的方法，包括以下连续步骤：
在所述基板(14)上沉积层(50)；
在所述层(50)上形成绝缘块(52)；
将所述层的未被绝缘块覆盖的部分蚀刻以形成衬垫(18)；
将所述绝缘块移除；
沉积用于覆盖所述衬垫和在所述衬垫之间的基板的电介质层(58)；
各向异性地蚀刻所述电介质层以将电介质从所述基板和从所述衬垫的顶部移除，并且留下在所述侧面(21)上的电介质层的部分(23)；以及
对未被衬垫覆盖的基板部分进行渗氮。
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JP2015536565A (ja) 2015-12-21
CN104918878A (zh) 2015-09-16
KR20150088785A (ko) 2015-08-03
BR112015008543A2 (pt) 2017-07-04
US9728679B2 (en) 2017-08-08
BR112015008543B1 (pt) 2021-01-26
US20160111593A1 (en) 2016-04-21
WO2014064395A1 (fr) 2014-05-01
KR102140315B1 (ko) 2020-07-31
FR2997558B1 (fr) 2015-12-18
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