JP2013532621A5 - - Google Patents

Download PDF

Info

Publication number
JP2013532621A5
JP2013532621A5 JP2013516546A JP2013516546A JP2013532621A5 JP 2013532621 A5 JP2013532621 A5 JP 2013532621A5 JP 2013516546 A JP2013516546 A JP 2013516546A JP 2013516546 A JP2013516546 A JP 2013516546A JP 2013532621 A5 JP2013532621 A5 JP 2013532621A5
Authority
JP
Japan
Prior art keywords
buffer layer
substrate
layer
less
nanowires
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013516546A
Other languages
English (en)
Japanese (ja)
Other versions
JP5981426B2 (ja
JP2013532621A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/SE2011/050845 external-priority patent/WO2011162715A1/en
Publication of JP2013532621A publication Critical patent/JP2013532621A/ja
Publication of JP2013532621A5 publication Critical patent/JP2013532621A5/ja
Application granted granted Critical
Publication of JP5981426B2 publication Critical patent/JP5981426B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2013516546A 2010-06-24 2011-06-27 配向されたナノワイヤー成長用のバッファ層を有する基板 Active JP5981426B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE1050700 2010-06-24
PCT/SE2011/050845 WO2011162715A1 (en) 2010-06-24 2011-06-27 Substrate with buffer layer for oriented nanowire growth

Publications (3)

Publication Number Publication Date
JP2013532621A JP2013532621A (ja) 2013-08-19
JP2013532621A5 true JP2013532621A5 (https=) 2014-08-14
JP5981426B2 JP5981426B2 (ja) 2016-08-31

Family

ID=45371681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013516546A Active JP5981426B2 (ja) 2010-06-24 2011-06-27 配向されたナノワイヤー成長用のバッファ層を有する基板

Country Status (9)

Country Link
US (1) US9947829B2 (https=)
EP (1) EP2586062A4 (https=)
JP (1) JP5981426B2 (https=)
KR (1) KR20130138657A (https=)
CN (1) CN103098216A (https=)
AU (1) AU2011269874B2 (https=)
CA (1) CA2802500A1 (https=)
SG (1) SG186312A1 (https=)
WO (1) WO2011162715A1 (https=)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201021112D0 (en) 2010-12-13 2011-01-26 Ntnu Technology Transfer As Nanowires
US9202945B2 (en) * 2011-12-23 2015-12-01 Nokia Technologies Oy Graphene-based MIM diode and associated methods
GB201200355D0 (en) * 2012-01-10 2012-02-22 Norwegian Univ Sci & Tech Ntnu Nanowires
CN103374751B (zh) * 2012-04-25 2016-06-15 清华大学 具有微构造的外延结构体的制备方法
GB201211038D0 (en) 2012-06-21 2012-08-01 Norwegian Univ Sci & Tech Ntnu Solar cells
DE102012109594A1 (de) 2012-10-09 2014-04-10 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
KR20150103661A (ko) 2012-10-26 2015-09-11 글로 에이비 나노와이어 led 구조 및 이를 제조하는 방법
FR2997557B1 (fr) 2012-10-26 2016-01-01 Commissariat Energie Atomique Dispositif electronique a nanofil(s) muni d'une couche tampon en metal de transition, procede de croissance d'au moins un nanofil, et procede de fabrication d'un dispositif
EP2912699B1 (en) 2012-10-26 2019-12-18 Glo Ab Method for modifying selected portions of nanowire sized opto-electronic structure
JP6322197B2 (ja) 2012-10-26 2018-05-09 グロ アーベーGlo Ab ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。
FR2997420B1 (fr) * 2012-10-26 2017-02-24 Commissariat Energie Atomique Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes
KR101603207B1 (ko) * 2013-01-29 2016-03-14 삼성전자주식회사 나노구조 반도체 발광소자 제조방법
DE102013009824A1 (de) * 2013-06-11 2014-12-11 Forschungsverbund Berlin E.V. Halbleitervorrichtung mit Nanosäulen aus Gruppe III-Nitridmaterial und Herstellungsverfahren für eine solche Halbleitervorrichtung
TW201515269A (zh) 2013-06-18 2015-04-16 Glo公司 用於平整化及界定奈米線裝置之活化區的絕緣層
GB201311101D0 (en) 2013-06-21 2013-08-07 Norwegian Univ Sci & Tech Ntnu Semiconducting Films
FR3007574B1 (fr) 2013-06-21 2015-07-17 Commissariat Energie Atomique Procede de fabrication d'une structure semiconductrice et composant semiconducteur comportant une telle structure semiconductrice
US8999737B2 (en) 2013-08-27 2015-04-07 Glo Ab Method of making molded LED package
US9257616B2 (en) 2013-08-27 2016-02-09 Glo Ab Molded LED package and method of making same
US9142745B2 (en) 2013-08-27 2015-09-22 Glo Ab Packaged LED device with castellations
WO2015089123A1 (en) 2013-12-13 2015-06-18 Glo Ab Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire leds
US9281442B2 (en) 2013-12-17 2016-03-08 Glo Ab III-nitride nanowire LED with strain modified surface active region and method of making thereof
KR102285786B1 (ko) 2014-01-20 2021-08-04 삼성전자 주식회사 반도체 발광 소자
FR3020177B1 (fr) * 2014-04-22 2016-05-13 Commissariat Energie Atomique Dispositif optoelectronique a rendement d'extraction lumineuse ameliore
KR102198694B1 (ko) 2014-07-11 2021-01-06 삼성전자주식회사 반도체 발광소자 및 반도체 발광소자 제조방법
KR102188494B1 (ko) * 2014-07-21 2020-12-09 삼성전자주식회사 반도체 발광소자, 반도체 발광소자 제조방법 및 반도체 발광소자 패키지 제조방법
WO2016025325A1 (en) * 2014-08-12 2016-02-18 Glo Ab Iii-nitride nanowire led with strain modified surface active region and method of making thereof
KR102164796B1 (ko) * 2014-08-28 2020-10-14 삼성전자주식회사 나노구조 반도체 발광소자
KR102337405B1 (ko) 2014-09-05 2021-12-13 삼성전자주식회사 나노구조 반도체 발광소자
KR102266615B1 (ko) 2014-11-17 2021-06-21 삼성전자주식회사 전계 효과 트랜지스터를 포함하는 반도체 소자 및 그 제조 방법
KR102237149B1 (ko) * 2014-11-18 2021-04-07 엘지이노텍 주식회사 발광소자 및 조명시스템
FR3029683B1 (fr) * 2014-12-05 2017-01-13 Commissariat Energie Atomique Dispositif electronique a element filaire s'etendant a partir d'une couche electriquement conductrice comportant du carbure de zirconium ou du carbure de hafnium
EA201890168A1 (ru) 2015-07-13 2018-08-31 Крайонано Ас Нанопроволока или нанопирамидки, выращенные на графитовой подложке
TWI772266B (zh) * 2015-07-13 2022-08-01 挪威商卡亞奈米公司 發光二極體裝置及光偵測器裝置
CA2993884A1 (en) * 2015-07-31 2017-02-09 Crayonano As Process for growing nanowires or nanopyramids on graphitic substrates
EP3144957A1 (en) * 2015-09-15 2017-03-22 Technische Universität München A method for fabricating a nanostructure
US11322652B2 (en) * 2015-12-14 2022-05-03 Ostendo Technologies, Inc. Methods for producing composite GaN nanocolumns and light emitting structures made from the methods
FR3053054B1 (fr) 2016-06-28 2021-04-02 Commissariat Energie Atomique Structure de nucleation adaptee a la croissance epitaxiale d’elements semiconducteurs tridimensionnels
US10480719B2 (en) * 2016-08-16 2019-11-19 King Abdullah University Of Science And Technology Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications
GB201701829D0 (en) * 2017-02-03 2017-03-22 Norwegian Univ Of Science And Tech (Ntnu) Device
GB201705755D0 (en) 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure
US10418499B2 (en) 2017-06-01 2019-09-17 Glo Ab Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof
US10707374B2 (en) 2017-09-15 2020-07-07 Glo Ab Etendue enhancement for light emitting diode subpixels
KR102701758B1 (ko) * 2018-11-27 2024-09-04 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 발광 소자를 구비한 표시 장치
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
FR3096834B1 (fr) * 2019-05-28 2022-11-25 Aledia Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite
CN110190162A (zh) * 2019-06-04 2019-08-30 深圳扑浪创新科技有限公司 一种led芯片的外延结构及其制备方法
GB201910352D0 (en) * 2019-07-19 2019-09-04 Univ Sheffield LED Arrays
GB201910348D0 (en) 2019-07-19 2019-09-04 Univ Sheffield LED Arrays
GB201913701D0 (en) 2019-09-23 2019-11-06 Crayonano As Composition of matter
CN110676283B (zh) * 2019-10-16 2022-03-25 福州大学 一种基于纳米线的μLED显示设计方法
KR102221285B1 (ko) * 2019-12-09 2021-03-03 한양대학교 산학협력단 이산화티타늄 나노막대의 성장방법
JP7779906B2 (ja) * 2021-04-16 2025-12-03 京セラ株式会社 半導体基板並びにその製造方法および製造装置、GaN系結晶体、半導体デバイス、電子機器
JP2023094009A (ja) * 2021-12-23 2023-07-05 セイコーエプソン株式会社 発光装置、プロジェクター、およびディスプレイ
CN115842077B (zh) * 2023-02-10 2023-04-28 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管
CN116804269B (zh) * 2023-05-10 2026-03-31 南京大学 一种纳米线阵列、生长方法及热电器件
US12446385B2 (en) 2023-11-03 2025-10-14 Snap Inc. Monolithic RGB microLED array

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6046465A (en) * 1998-04-17 2000-04-04 Hewlett-Packard Company Buried reflectors for light emitters in epitaxial material and method for producing same
JP4613373B2 (ja) * 1999-07-19 2011-01-19 ソニー株式会社 Iii族ナイトライド化合物半導体薄膜の形成方法および半導体素子の製造方法
US6599564B1 (en) * 2000-08-09 2003-07-29 The Board Of Trustees Of The University Of Illinois Substrate independent distributed bragg reflector and formation method
US6649287B2 (en) 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US6523188B1 (en) 2002-01-14 2003-02-25 Kiefer Pool Equipment Co. Top for starting platform for swimming pool
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
US6818061B2 (en) 2003-04-10 2004-11-16 Honeywell International, Inc. Method for growing single crystal GaN on silicon
JP3821232B2 (ja) * 2003-04-15 2006-09-13 日立電線株式会社 エピタキシャル成長用多孔質基板およびその製造方法ならびにiii族窒化物半導体基板の製造方法
JP2006237556A (ja) * 2005-01-31 2006-09-07 Kanagawa Acad Of Sci & Technol GaN膜生成方法及び半導体素子並びにIII族窒化物の薄膜生成方法及びIII族窒化物の薄膜を有する半導体素子
US7365374B2 (en) 2005-05-03 2008-04-29 Nitronex Corporation Gallium nitride material structures including substrates and methods associated with the same
JP2008544567A (ja) * 2005-06-27 2008-12-04 ソウル オプト デバイス カンパニー リミテッド 窒化物多重量子ウェルを有するナノロッドアレイ構造の発光ダイオード、その製造方法、及びナノロッド
KR100753152B1 (ko) * 2005-08-12 2007-08-30 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
WO2007049939A1 (en) * 2005-10-29 2007-05-03 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US20070257264A1 (en) 2005-11-10 2007-11-08 Hersee Stephen D CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS
TWI408264B (zh) * 2005-12-15 2013-09-11 聖戈班晶體探測器公司 低差排密度氮化鎵(GaN)之生長方法
SG10201405004WA (en) * 2006-02-23 2014-10-30 Azzurro Semiconductors Ag Nitride semiconductor component and process for its production
CN101443265B (zh) 2006-03-08 2014-03-26 昆南诺股份有限公司 在硅上无金属合成外延半导体纳米线的方法
AU2007313096B2 (en) * 2006-03-10 2011-11-10 Unm Rainforest Innovations Pulsed growth of GaN nanowires and applications in group III nitride semiconductor substrate materials and devices
EP2102899B1 (en) 2007-01-12 2020-11-11 QuNano AB Nitride nanowires and method of producing such
GB0702560D0 (en) * 2007-02-09 2007-03-21 Univ Bath Production of Semiconductor devices
WO2009096932A1 (en) 2008-01-28 2009-08-06 Amit Goyal [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices
KR101515100B1 (ko) * 2008-10-21 2015-04-24 삼성전자주식회사 발광 다이오드 및 그 제조 방법
US8097999B2 (en) * 2009-04-27 2012-01-17 University Of Seoul Industry Cooperation Foundation Piezoelectric actuator

Similar Documents

Publication Publication Date Title
JP2013532621A5 (https=)
JP5981426B2 (ja) 配向されたナノワイヤー成長用のバッファ層を有する基板
JP5740309B2 (ja) 放射放出薄膜部品の製造方法および放射放出薄膜部品
KR101636915B1 (ko) 그래핀 또는 탄소나노튜브를 이용한 반도체 화합물 구조체 및 그 제조방법과, 반도체 화합물 구조체를 포함하는 반도체 소자
US8952243B2 (en) Stacked structure including vertically grown semiconductor, p-n junction device including the stacked structure, and method of manufacturing thereof
AU2019204449A1 (en) Process for growing nanowires or nanopyramids on graphitic substrates
JP2012507840A5 (https=)
TWI304278B (en) Semiconductor emitting device substrate and method of fabricating the same
CN1533593A (zh) 用于生长氮化镓的基片、其制法和制备氮化镓基片的方法
CN102593297A (zh) 模板、其制造方法及制造半导体发光器件的方法
CN105917444A (zh) 半导体器件及制造方法
TW201342472A (zh) 半導體元件及其製造方法
WO2011129246A1 (ja) 単結晶基板、結晶性膜付き単結晶基板、結晶性膜、結晶性膜付き単結晶基板の製造方法、結晶性基板の製造方法、及び素子製造方法
CN103050594B (zh) 氮化物半导体结构的制造方法
CN106229394A (zh) 微发光二极管及其制造方法和显示器
US20140377507A1 (en) Composite Substrate Used For GaN Growth
JP2005011944A (ja) 発光装置
JP7325850B2 (ja) 超可撓性透明半導体薄膜及びその製造方法
CN105826438B (zh) 一种具有金属缓冲层的发光二极管及其制备方法
TWI443864B (zh) Fabrication of crystalline structure
JP7815747B2 (ja) 結晶成長用基板、窒化ガリウム基板、半導体基板、および窒化ガリウム基板の製造方法
KR101273459B1 (ko) MOCVD 를 이용하여 고품질 epitaxial layer 형성을 위한 4-step NWELOG 성장 방법
WO2011152799A1 (en) Method of forming epitaxial zinc oxide films
JP2020132441A (ja) 窒化アルミニウム積層部材および窒化アルミニウム層
JP2012234853A (ja) 半導体基板、半導体装置及びその製造方法