JP2013532621A5 - - Google Patents
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- JP2013532621A5 JP2013532621A5 JP2013516546A JP2013516546A JP2013532621A5 JP 2013532621 A5 JP2013532621 A5 JP 2013532621A5 JP 2013516546 A JP2013516546 A JP 2013516546A JP 2013516546 A JP2013516546 A JP 2013516546A JP 2013532621 A5 JP2013532621 A5 JP 2013532621A5
- Authority
- JP
- Japan
- Prior art keywords
- buffer layer
- substrate
- layer
- less
- nanowires
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE1050700 | 2010-06-24 | ||
| PCT/SE2011/050845 WO2011162715A1 (en) | 2010-06-24 | 2011-06-27 | Substrate with buffer layer for oriented nanowire growth |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013532621A JP2013532621A (ja) | 2013-08-19 |
| JP2013532621A5 true JP2013532621A5 (https=) | 2014-08-14 |
| JP5981426B2 JP5981426B2 (ja) | 2016-08-31 |
Family
ID=45371681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013516546A Active JP5981426B2 (ja) | 2010-06-24 | 2011-06-27 | 配向されたナノワイヤー成長用のバッファ層を有する基板 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9947829B2 (https=) |
| EP (1) | EP2586062A4 (https=) |
| JP (1) | JP5981426B2 (https=) |
| KR (1) | KR20130138657A (https=) |
| CN (1) | CN103098216A (https=) |
| AU (1) | AU2011269874B2 (https=) |
| CA (1) | CA2802500A1 (https=) |
| SG (1) | SG186312A1 (https=) |
| WO (1) | WO2011162715A1 (https=) |
Families Citing this family (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201021112D0 (en) | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
| US9202945B2 (en) * | 2011-12-23 | 2015-12-01 | Nokia Technologies Oy | Graphene-based MIM diode and associated methods |
| GB201200355D0 (en) * | 2012-01-10 | 2012-02-22 | Norwegian Univ Sci & Tech Ntnu | Nanowires |
| CN103374751B (zh) * | 2012-04-25 | 2016-06-15 | 清华大学 | 具有微构造的外延结构体的制备方法 |
| GB201211038D0 (en) | 2012-06-21 | 2012-08-01 | Norwegian Univ Sci & Tech Ntnu | Solar cells |
| DE102012109594A1 (de) | 2012-10-09 | 2014-04-10 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
| KR20150103661A (ko) | 2012-10-26 | 2015-09-11 | 글로 에이비 | 나노와이어 led 구조 및 이를 제조하는 방법 |
| FR2997557B1 (fr) | 2012-10-26 | 2016-01-01 | Commissariat Energie Atomique | Dispositif electronique a nanofil(s) muni d'une couche tampon en metal de transition, procede de croissance d'au moins un nanofil, et procede de fabrication d'un dispositif |
| EP2912699B1 (en) | 2012-10-26 | 2019-12-18 | Glo Ab | Method for modifying selected portions of nanowire sized opto-electronic structure |
| JP6322197B2 (ja) | 2012-10-26 | 2018-05-09 | グロ アーベーGlo Ab | ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。 |
| FR2997420B1 (fr) * | 2012-10-26 | 2017-02-24 | Commissariat Energie Atomique | Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes |
| KR101603207B1 (ko) * | 2013-01-29 | 2016-03-14 | 삼성전자주식회사 | 나노구조 반도체 발광소자 제조방법 |
| DE102013009824A1 (de) * | 2013-06-11 | 2014-12-11 | Forschungsverbund Berlin E.V. | Halbleitervorrichtung mit Nanosäulen aus Gruppe III-Nitridmaterial und Herstellungsverfahren für eine solche Halbleitervorrichtung |
| TW201515269A (zh) | 2013-06-18 | 2015-04-16 | Glo公司 | 用於平整化及界定奈米線裝置之活化區的絕緣層 |
| GB201311101D0 (en) | 2013-06-21 | 2013-08-07 | Norwegian Univ Sci & Tech Ntnu | Semiconducting Films |
| FR3007574B1 (fr) | 2013-06-21 | 2015-07-17 | Commissariat Energie Atomique | Procede de fabrication d'une structure semiconductrice et composant semiconducteur comportant une telle structure semiconductrice |
| US8999737B2 (en) | 2013-08-27 | 2015-04-07 | Glo Ab | Method of making molded LED package |
| US9257616B2 (en) | 2013-08-27 | 2016-02-09 | Glo Ab | Molded LED package and method of making same |
| US9142745B2 (en) | 2013-08-27 | 2015-09-22 | Glo Ab | Packaged LED device with castellations |
| WO2015089123A1 (en) | 2013-12-13 | 2015-06-18 | Glo Ab | Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire leds |
| US9281442B2 (en) | 2013-12-17 | 2016-03-08 | Glo Ab | III-nitride nanowire LED with strain modified surface active region and method of making thereof |
| KR102285786B1 (ko) | 2014-01-20 | 2021-08-04 | 삼성전자 주식회사 | 반도체 발광 소자 |
| FR3020177B1 (fr) * | 2014-04-22 | 2016-05-13 | Commissariat Energie Atomique | Dispositif optoelectronique a rendement d'extraction lumineuse ameliore |
| KR102198694B1 (ko) | 2014-07-11 | 2021-01-06 | 삼성전자주식회사 | 반도체 발광소자 및 반도체 발광소자 제조방법 |
| KR102188494B1 (ko) * | 2014-07-21 | 2020-12-09 | 삼성전자주식회사 | 반도체 발광소자, 반도체 발광소자 제조방법 및 반도체 발광소자 패키지 제조방법 |
| WO2016025325A1 (en) * | 2014-08-12 | 2016-02-18 | Glo Ab | Iii-nitride nanowire led with strain modified surface active region and method of making thereof |
| KR102164796B1 (ko) * | 2014-08-28 | 2020-10-14 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
| KR102337405B1 (ko) | 2014-09-05 | 2021-12-13 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
| KR102266615B1 (ko) | 2014-11-17 | 2021-06-21 | 삼성전자주식회사 | 전계 효과 트랜지스터를 포함하는 반도체 소자 및 그 제조 방법 |
| KR102237149B1 (ko) * | 2014-11-18 | 2021-04-07 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
| FR3029683B1 (fr) * | 2014-12-05 | 2017-01-13 | Commissariat Energie Atomique | Dispositif electronique a element filaire s'etendant a partir d'une couche electriquement conductrice comportant du carbure de zirconium ou du carbure de hafnium |
| EA201890168A1 (ru) | 2015-07-13 | 2018-08-31 | Крайонано Ас | Нанопроволока или нанопирамидки, выращенные на графитовой подложке |
| TWI772266B (zh) * | 2015-07-13 | 2022-08-01 | 挪威商卡亞奈米公司 | 發光二極體裝置及光偵測器裝置 |
| CA2993884A1 (en) * | 2015-07-31 | 2017-02-09 | Crayonano As | Process for growing nanowires or nanopyramids on graphitic substrates |
| EP3144957A1 (en) * | 2015-09-15 | 2017-03-22 | Technische Universität München | A method for fabricating a nanostructure |
| US11322652B2 (en) * | 2015-12-14 | 2022-05-03 | Ostendo Technologies, Inc. | Methods for producing composite GaN nanocolumns and light emitting structures made from the methods |
| FR3053054B1 (fr) | 2016-06-28 | 2021-04-02 | Commissariat Energie Atomique | Structure de nucleation adaptee a la croissance epitaxiale d’elements semiconducteurs tridimensionnels |
| US10480719B2 (en) * | 2016-08-16 | 2019-11-19 | King Abdullah University Of Science And Technology | Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications |
| GB201701829D0 (en) * | 2017-02-03 | 2017-03-22 | Norwegian Univ Of Science And Tech (Ntnu) | Device |
| GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
| US10418499B2 (en) | 2017-06-01 | 2019-09-17 | Glo Ab | Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof |
| US10707374B2 (en) | 2017-09-15 | 2020-07-07 | Glo Ab | Etendue enhancement for light emitting diode subpixels |
| KR102701758B1 (ko) * | 2018-11-27 | 2024-09-04 | 삼성디스플레이 주식회사 | 발광 소자, 이의 제조 방법 및 발광 소자를 구비한 표시 장치 |
| US11637219B2 (en) | 2019-04-12 | 2023-04-25 | Google Llc | Monolithic integration of different light emitting structures on a same substrate |
| FR3096834B1 (fr) * | 2019-05-28 | 2022-11-25 | Aledia | Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite |
| CN110190162A (zh) * | 2019-06-04 | 2019-08-30 | 深圳扑浪创新科技有限公司 | 一种led芯片的外延结构及其制备方法 |
| GB201910352D0 (en) * | 2019-07-19 | 2019-09-04 | Univ Sheffield | LED Arrays |
| GB201910348D0 (en) | 2019-07-19 | 2019-09-04 | Univ Sheffield | LED Arrays |
| GB201913701D0 (en) | 2019-09-23 | 2019-11-06 | Crayonano As | Composition of matter |
| CN110676283B (zh) * | 2019-10-16 | 2022-03-25 | 福州大学 | 一种基于纳米线的μLED显示设计方法 |
| KR102221285B1 (ko) * | 2019-12-09 | 2021-03-03 | 한양대학교 산학협력단 | 이산화티타늄 나노막대의 성장방법 |
| JP7779906B2 (ja) * | 2021-04-16 | 2025-12-03 | 京セラ株式会社 | 半導体基板並びにその製造方法および製造装置、GaN系結晶体、半導体デバイス、電子機器 |
| JP2023094009A (ja) * | 2021-12-23 | 2023-07-05 | セイコーエプソン株式会社 | 発光装置、プロジェクター、およびディスプレイ |
| CN115842077B (zh) * | 2023-02-10 | 2023-04-28 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法、发光二极管 |
| CN116804269B (zh) * | 2023-05-10 | 2026-03-31 | 南京大学 | 一种纳米线阵列、生长方法及热电器件 |
| US12446385B2 (en) | 2023-11-03 | 2025-10-14 | Snap Inc. | Monolithic RGB microLED array |
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| US6046465A (en) * | 1998-04-17 | 2000-04-04 | Hewlett-Packard Company | Buried reflectors for light emitters in epitaxial material and method for producing same |
| JP4613373B2 (ja) * | 1999-07-19 | 2011-01-19 | ソニー株式会社 | Iii族ナイトライド化合物半導体薄膜の形成方法および半導体素子の製造方法 |
| US6599564B1 (en) * | 2000-08-09 | 2003-07-29 | The Board Of Trustees Of The University Of Illinois | Substrate independent distributed bragg reflector and formation method |
| US6649287B2 (en) | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
| US6523188B1 (en) | 2002-01-14 | 2003-02-25 | Kiefer Pool Equipment Co. | Top for starting platform for swimming pool |
| US7335908B2 (en) | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
| US6818061B2 (en) | 2003-04-10 | 2004-11-16 | Honeywell International, Inc. | Method for growing single crystal GaN on silicon |
| JP3821232B2 (ja) * | 2003-04-15 | 2006-09-13 | 日立電線株式会社 | エピタキシャル成長用多孔質基板およびその製造方法ならびにiii族窒化物半導体基板の製造方法 |
| JP2006237556A (ja) * | 2005-01-31 | 2006-09-07 | Kanagawa Acad Of Sci & Technol | GaN膜生成方法及び半導体素子並びにIII族窒化物の薄膜生成方法及びIII族窒化物の薄膜を有する半導体素子 |
| US7365374B2 (en) | 2005-05-03 | 2008-04-29 | Nitronex Corporation | Gallium nitride material structures including substrates and methods associated with the same |
| JP2008544567A (ja) * | 2005-06-27 | 2008-12-04 | ソウル オプト デバイス カンパニー リミテッド | 窒化物多重量子ウェルを有するナノロッドアレイ構造の発光ダイオード、その製造方法、及びナノロッド |
| KR100753152B1 (ko) * | 2005-08-12 | 2007-08-30 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
| WO2007049939A1 (en) * | 2005-10-29 | 2007-05-03 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
| US20070257264A1 (en) | 2005-11-10 | 2007-11-08 | Hersee Stephen D | CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS |
| TWI408264B (zh) * | 2005-12-15 | 2013-09-11 | 聖戈班晶體探測器公司 | 低差排密度氮化鎵(GaN)之生長方法 |
| SG10201405004WA (en) * | 2006-02-23 | 2014-10-30 | Azzurro Semiconductors Ag | Nitride semiconductor component and process for its production |
| CN101443265B (zh) | 2006-03-08 | 2014-03-26 | 昆南诺股份有限公司 | 在硅上无金属合成外延半导体纳米线的方法 |
| AU2007313096B2 (en) * | 2006-03-10 | 2011-11-10 | Unm Rainforest Innovations | Pulsed growth of GaN nanowires and applications in group III nitride semiconductor substrate materials and devices |
| EP2102899B1 (en) | 2007-01-12 | 2020-11-11 | QuNano AB | Nitride nanowires and method of producing such |
| GB0702560D0 (en) * | 2007-02-09 | 2007-03-21 | Univ Bath | Production of Semiconductor devices |
| WO2009096932A1 (en) | 2008-01-28 | 2009-08-06 | Amit Goyal | [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices |
| KR101515100B1 (ko) * | 2008-10-21 | 2015-04-24 | 삼성전자주식회사 | 발광 다이오드 및 그 제조 방법 |
| US8097999B2 (en) * | 2009-04-27 | 2012-01-17 | University Of Seoul Industry Cooperation Foundation | Piezoelectric actuator |
-
2011
- 2011-06-27 SG SG2012091344A patent/SG186312A1/en unknown
- 2011-06-27 WO PCT/SE2011/050845 patent/WO2011162715A1/en not_active Ceased
- 2011-06-27 US US13/805,273 patent/US9947829B2/en active Active
- 2011-06-27 KR KR1020127034303A patent/KR20130138657A/ko not_active Withdrawn
- 2011-06-27 CA CA2802500A patent/CA2802500A1/en not_active Abandoned
- 2011-06-27 EP EP11798484.9A patent/EP2586062A4/en not_active Withdrawn
- 2011-06-27 JP JP2013516546A patent/JP5981426B2/ja active Active
- 2011-06-27 AU AU2011269874A patent/AU2011269874B2/en not_active Ceased
- 2011-06-27 CN CN2011800310888A patent/CN103098216A/zh active Pending
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