KR20130138657A - 배향된 나노와이어 성장을 위해 버퍼 층을 갖는 기판 - Google Patents

배향된 나노와이어 성장을 위해 버퍼 층을 갖는 기판 Download PDF

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KR20130138657A
KR20130138657A KR1020127034303A KR20127034303A KR20130138657A KR 20130138657 A KR20130138657 A KR 20130138657A KR 1020127034303 A KR1020127034303 A KR 1020127034303A KR 20127034303 A KR20127034303 A KR 20127034303A KR 20130138657 A KR20130138657 A KR 20130138657A
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buffer layer
substrate
sublayers
nanowire
layer
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요나 올슨
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글로 에이비
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    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
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  • Engineering & Computer Science (AREA)
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  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Materials Engineering (AREA)
KR1020127034303A 2010-06-24 2011-06-27 배향된 나노와이어 성장을 위해 버퍼 층을 갖는 기판 Withdrawn KR20130138657A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE1050700-2 2010-06-24
SE1050700 2010-06-24
PCT/SE2011/050845 WO2011162715A1 (en) 2010-06-24 2011-06-27 Substrate with buffer layer for oriented nanowire growth

Publications (1)

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KR20130138657A true KR20130138657A (ko) 2013-12-19

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KR1020127034303A Withdrawn KR20130138657A (ko) 2010-06-24 2011-06-27 배향된 나노와이어 성장을 위해 버퍼 층을 갖는 기판

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Country Link
US (1) US9947829B2 (https=)
EP (1) EP2586062A4 (https=)
JP (1) JP5981426B2 (https=)
KR (1) KR20130138657A (https=)
CN (1) CN103098216A (https=)
AU (1) AU2011269874B2 (https=)
CA (1) CA2802500A1 (https=)
SG (1) SG186312A1 (https=)
WO (1) WO2011162715A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR102221285B1 (ko) * 2019-12-09 2021-03-03 한양대학교 산학협력단 이산화티타늄 나노막대의 성장방법

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