CN103081086B - 具有对称馈给结构的基板支架 - Google Patents

具有对称馈给结构的基板支架 Download PDF

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Publication number
CN103081086B
CN103081086B CN201180041097.5A CN201180041097A CN103081086B CN 103081086 B CN103081086 B CN 103081086B CN 201180041097 A CN201180041097 A CN 201180041097A CN 103081086 B CN103081086 B CN 103081086B
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China
Prior art keywords
conductor
electrode
substrate holder
substrate
dielectric layer
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CN201180041097.5A
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English (en)
Chinese (zh)
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CN103081086A (zh
Inventor
X·林
D·A·小布齐伯格
X·周
A·恩盖耶
A·希内尔
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Applied Materials Inc
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Applied Materials Inc
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201180041097.5A 2010-10-22 2011-10-20 具有对称馈给结构的基板支架 Active CN103081086B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/910,547 US9123762B2 (en) 2010-10-22 2010-10-22 Substrate support with symmetrical feed structure
US12/910,547 2010-10-22
PCT/US2011/057024 WO2012054689A2 (en) 2010-10-22 2011-10-20 Substrate support with symmetrical feed structure

Publications (2)

Publication Number Publication Date
CN103081086A CN103081086A (zh) 2013-05-01
CN103081086B true CN103081086B (zh) 2016-08-03

Family

ID=45971961

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180041097.5A Active CN103081086B (zh) 2010-10-22 2011-10-20 具有对称馈给结构的基板支架

Country Status (6)

Country Link
US (3) US9123762B2 (enExample)
JP (2) JP6226746B2 (enExample)
KR (2) KR102069550B1 (enExample)
CN (1) CN103081086B (enExample)
TW (2) TWI590373B (enExample)
WO (1) WO2012054689A2 (enExample)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6013740B2 (ja) * 2012-02-03 2016-10-25 東京エレクトロン株式会社 離脱制御方法及びプラズマ処理装置の制御装置
US9404176B2 (en) * 2012-06-05 2016-08-02 Applied Materials, Inc. Substrate support with radio frequency (RF) return path
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10049948B2 (en) * 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
US9337000B2 (en) * 2013-10-01 2016-05-10 Lam Research Corporation Control of impedance of RF return path
US9401264B2 (en) 2013-10-01 2016-07-26 Lam Research Corporation Control of impedance of RF delivery path
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US20150083042A1 (en) * 2013-09-26 2015-03-26 Applied Materials, Inc. Rotatable substrate support having radio frequency applicator
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US10186444B2 (en) * 2015-03-20 2019-01-22 Applied Materials, Inc. Gas flow for condensation reduction with a substrate processing chuck
US10153136B2 (en) * 2015-08-04 2018-12-11 Lam Research Corporation Hollow RF feed with coaxial DC power feed
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
WO2017184223A1 (en) * 2016-04-22 2017-10-26 Applied Materials, Inc. Substrate support pedestal having plasma confinement features
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
JP6829087B2 (ja) * 2017-01-27 2021-02-10 京セラ株式会社 試料保持具
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
TW202013581A (zh) * 2018-05-23 2020-04-01 日商東京威力科創股份有限公司 電漿處理裝置
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
WO2020013938A1 (en) * 2018-07-07 2020-01-16 Applied Materials, Inc. Semiconductor processing apparatus for high rf power process
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
KR102810211B1 (ko) * 2019-06-07 2025-05-19 어플라이드 머티어리얼스, 인코포레이티드 심리스 전기 도관
KR20230004685A (ko) * 2020-04-24 2023-01-06 램 리써치 코포레이션 기판 지지 어셈블리를 위한 플로팅 (float) PCB 설계
JP7761629B2 (ja) * 2020-07-17 2025-10-28 ラム リサーチ コーポレーション 基板支持セラミックにワイヤを取り付ける方法
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US20220399185A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US20230380016A1 (en) * 2022-05-17 2023-11-23 Applied Materials, Inc. High-temperature substrate support assembly with failure protection
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060005930A1 (en) * 2003-03-12 2006-01-12 Tokyo Electron Limited Substrate supporting structure for semiconductor processing, and plasma processing device
CN2768200Y (zh) * 2003-04-24 2006-03-29 应用材料公司 衬底支撑组件
US20080116196A1 (en) * 2006-11-22 2008-05-22 Toshihiro Nakajima Heat treatment apparatus which emits flash of light

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0478133A (ja) * 1990-07-20 1992-03-12 Tokyo Electron Ltd プラズマ処理装置
JP3058530B2 (ja) * 1993-02-20 2000-07-04 東京エレクトロン株式会社 プラズマ処理装置
US5478429A (en) * 1993-01-20 1995-12-26 Tokyo Electron Limited Plasma process apparatus
TW277139B (enExample) 1993-09-16 1996-06-01 Hitachi Seisakusyo Kk
US5671116A (en) * 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
US5968379A (en) * 1995-07-14 1999-10-19 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability and related methods
US6081414A (en) 1998-05-01 2000-06-27 Applied Materials, Inc. Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
US6462928B1 (en) 1999-05-07 2002-10-08 Applied Materials, Inc. Electrostatic chuck having improved electrical connector and method
JP2000332089A (ja) * 1999-05-18 2000-11-30 Toshiba Ceramics Co Ltd ウエハ加熱保持用静電チャック
US6534751B2 (en) * 2000-02-28 2003-03-18 Kyocera Corporation Wafer heating apparatus and ceramic heater, and method for producing the same
CN1484855A (zh) 2001-08-10 2004-03-24 揖斐电株式会社 陶瓷接合体
JP3739310B2 (ja) * 2001-11-05 2006-01-25 コアックス株式会社 遮蔽型多心ケーブルの製法
EP1386956B1 (en) 2002-07-30 2009-07-01 Chevron Oronite S.A. Additive composition for transmission oil containing hydrated alkali metal borate and hexagonal boron nitride
JP4381699B2 (ja) * 2003-03-12 2009-12-09 東京エレクトロン株式会社 プラズマ処理装置
JP4219734B2 (ja) * 2003-05-19 2009-02-04 東京エレクトロン株式会社 基板保持機構およびプラズマ処理装置
JP2005166354A (ja) 2003-12-01 2005-06-23 Ngk Insulators Ltd セラミックヒーター
US20050194374A1 (en) * 2004-03-02 2005-09-08 Applied Materials, Inc. Heated ceramic substrate support with protective coating
JP2005347620A (ja) * 2004-06-04 2005-12-15 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理装置の載置台ユニット
US20050274324A1 (en) * 2004-06-04 2005-12-15 Tokyo Electron Limited Plasma processing apparatus and mounting unit thereof
JP4590363B2 (ja) * 2005-03-16 2010-12-01 日本碍子株式会社 ガス供給部材及びそれを用いた処理装置
US7354288B2 (en) * 2005-06-03 2008-04-08 Applied Materials, Inc. Substrate support with clamping electrical connector
JP5069452B2 (ja) 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
US7838800B2 (en) 2006-09-25 2010-11-23 Tokyo Electron Limited Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system
JP4640842B2 (ja) 2006-10-11 2011-03-02 日本碍子株式会社 加熱装置
JP4944601B2 (ja) 2006-12-28 2012-06-06 新光電気工業株式会社 静電チャック及び基板温調固定装置
JP4992630B2 (ja) * 2007-09-19 2012-08-08 東京エレクトロン株式会社 載置台構造及び処理装置
KR100931869B1 (ko) 2008-01-15 2009-12-15 (주)퓨전에이드 기판 가열장치
JP2009182139A (ja) 2008-01-30 2009-08-13 Tokyo Electron Ltd 載置台構造及び処理装置
JP4450106B1 (ja) 2008-03-11 2010-04-14 東京エレクトロン株式会社 載置台構造及び処理装置
US20090236214A1 (en) 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
JP5222598B2 (ja) * 2008-03-25 2013-06-26 東京エレクトロン株式会社 プラズマ処理装置及び給電棒
US20090274590A1 (en) * 2008-05-05 2009-11-05 Applied Materials, Inc. Plasma reactor electrostatic chuck having a coaxial rf feed and multizone ac heater power transmission through the coaxial feed
US20100018648A1 (en) 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
JP5476726B2 (ja) 2009-01-30 2014-04-23 住友電気工業株式会社 半導体製造装置用ウエハ保持体、及びそれを備えた半導体製造装置
JP2010159493A (ja) * 2010-01-27 2010-07-22 Tokyo Electron Ltd プラズマ処理装置、インピーダンス整合器、結合器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060005930A1 (en) * 2003-03-12 2006-01-12 Tokyo Electron Limited Substrate supporting structure for semiconductor processing, and plasma processing device
CN2768200Y (zh) * 2003-04-24 2006-03-29 应用材料公司 衬底支撑组件
US20080116196A1 (en) * 2006-11-22 2008-05-22 Toshihiro Nakajima Heat treatment apparatus which emits flash of light

Also Published As

Publication number Publication date
WO2012054689A2 (en) 2012-04-26
KR102069550B1 (ko) 2020-02-11
CN103081086A (zh) 2013-05-01
TW201628122A (zh) 2016-08-01
US10096494B2 (en) 2018-10-09
TWI590373B (zh) 2017-07-01
TW201227870A (en) 2012-07-01
US20120097332A1 (en) 2012-04-26
TWI538093B (zh) 2016-06-11
JP2017201705A (ja) 2017-11-09
US10770328B2 (en) 2020-09-08
KR20130122720A (ko) 2013-11-08
US20190051551A1 (en) 2019-02-14
WO2012054689A3 (en) 2012-06-28
US20150371877A1 (en) 2015-12-24
JP6226746B2 (ja) 2017-11-08
JP2013543269A (ja) 2013-11-28
JP6330087B2 (ja) 2018-05-23
US9123762B2 (en) 2015-09-01
KR101950330B1 (ko) 2019-02-20
KR20190021472A (ko) 2019-03-05

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