KR100931869B1 - 기판 가열장치 - Google Patents
기판 가열장치 Download PDFInfo
- Publication number
- KR100931869B1 KR100931869B1 KR1020080004379A KR20080004379A KR100931869B1 KR 100931869 B1 KR100931869 B1 KR 100931869B1 KR 1020080004379 A KR1020080004379 A KR 1020080004379A KR 20080004379 A KR20080004379 A KR 20080004379A KR 100931869 B1 KR100931869 B1 KR 100931869B1
- Authority
- KR
- South Korea
- Prior art keywords
- heat generating
- heating
- substrate
- generating means
- lower plate
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Resistance Heating (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (10)
- 회전축상의 원판 형상 기판 지지대에 탑재되는 다수개의 기판을 가열시키는 기판 가열장치에 있어서,상기 기판 지지대 내부에 전체적으로 원 형상으로 배치되는 1 이상의 발열수단; 상기 발열수단 양단에 연결된 상태에서 회전축을 따라 인출되는 리드수단; 및 회전하는 상기 리드수단의 양단을 고정된 전원의 양 단자에 접속하는 접속수단을 포함하되,상기 기판 지지대는 하부 플레이트와, 하부 플레이트를 덮는 상부 플레이트로 이루어지고,상기 발열수단은 하부 플레이트 상에 원주 방향으로 형성된 홈에 배치된 발열부와, 상기 발열부에 연결되어 하부 플레이트 상의 중앙 방향으로 배치되는 비발열부로 구성되는 것을 특징으로 하는 기판 가열장치.
- 청구항 1에 있어서,상기 발열수단을 2 이상 구비하고,상기 발열수단 중 외곽에 설치된 발열수단일수록 상대적인 발열량을 크게 하는 것을 특징으로 하는 기판 가열장치.
- 청구항 2에 있어서,상기 각각의 발열수단 중 외곽에 설치된 발열수단일수록 상대적으로 전력을 더 인가하도록 제어하는 제어수단을 더 포함하여 구성되는 것을 특징으로 하는 기판 가열장치.
- 청구항 1에 있어서,상기 발열수단은,와이어 형태의 저항발열체, 스트립 형태의 저항발열체 및 열을 복사하는 램프 중 어느 하나인 것을 특징으로 하는 기판 가열장치.
- 삭제
- 청구항 1에 있어서,상기 비발열부는 각각의 기판 사이의 하부에 위치하는 하부 플레이트상에 배치되는 것을 특징으로 하는 기판 가열장치.
- 청구항 1에 있어서,상기 발열수단은 2 이상 구비되며,각각의 발열수단의 비발열부는 다른 발열수단의 발열부 하부에 배치되는 것을 특징으로 하는 기판 가열장치.
- 청구항 7에 있어서,상기 비발열부는 상기 하부 플레이트 상에 반경 방향으로 형성된 다수개 홈에 삽입되는 것을 특징으로 하는 기판 가열장치.
- 청구항 1에 있어서,상기 발열부는,상기 하부 플레이트 중앙을 중심으로 1 이상의 동심원 원주 방향을 따라 배치되도록 절곡되어 형성되는 것을 특징으로 하는 기판 가열장치.
- 청구항 1에 있어서,상기 회전축 외주에는 챔버와의 기밀을 유지하기 위한 실 하우징이 설치되고,상기 리드수단은, 상기 기판 지지대와 회전축 사이에 설치된 플랜지 하단의 피드 스루에 의하여 발열수단의 전선과 접속수단의 전선이 연결되도록 구성되는 것을 특징으로 하는 기판 가열장치.
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KR1020080004379A KR100931869B1 (ko) | 2008-01-15 | 2008-01-15 | 기판 가열장치 |
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KR1020080004379A KR100931869B1 (ko) | 2008-01-15 | 2008-01-15 | 기판 가열장치 |
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KR20090078514A KR20090078514A (ko) | 2009-07-20 |
KR100931869B1 true KR100931869B1 (ko) | 2009-12-15 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US9123762B2 (en) | 2010-10-22 | 2015-09-01 | Applied Materials, Inc. | Substrate support with symmetrical feed structure |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990024486A (ko) * | 1997-09-03 | 1999-04-06 | 박원훈 | 박막 제조용 진공 장비의 회전식 기판 가열 장치 |
JP2003133233A (ja) * | 2001-10-23 | 2003-05-09 | Hitachi Kokusai Electric Inc | 基板処理装置 |
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- 2008-01-15 KR KR1020080004379A patent/KR100931869B1/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990024486A (ko) * | 1997-09-03 | 1999-04-06 | 박원훈 | 박막 제조용 진공 장비의 회전식 기판 가열 장치 |
JP2003133233A (ja) * | 2001-10-23 | 2003-05-09 | Hitachi Kokusai Electric Inc | 基板処理装置 |
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